# Power MOSFET, P Channel, 12 V, 9.1 A, 0.012 ohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3943691RL/)

**URL**: https://novapart.co/products/DMP1022UFDE-7/power-mosfet-p-channel-12-v-91-a-0012-ohm-u
**SKU**: DMP1022UFDE-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1570
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 660mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9.1A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 800mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943691RL/)

**NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF DMP1022UFDE** po| ~~p..s—i‘(e~~ ‘assd|, CS **12V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

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|||
|---|---|
|ID Max|
|BVDSS|RDS(ON) Max|
|TA = +25°C|
|16mΩ @ VGS = -4.5V|-9.1A|
|21.5mΩ @ VGS = -2.5V|-7.9A|
|-12V|
|26mΩ @ VGS = -1.8V|-7.0A|
|32mΩ @ VGS = -1.5V|-6.3A|

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## **Features** 

- 0.6mm Profile – Ideal For Low Profile Applications 

- PCB Footprint of 4mm[2] 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- ESD Protected to 3KV 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMP1022UFDEQ)** 

## **Description** 

This MOSFET is designed specifically for use in battery management applications. 

## **Mechanical Data** 

- Case: U-DFN2020-6 (Type E) 

- Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

- Weight: 0.0065 grams (Approximate) 

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U-DFN2020-6  (Type E)<br>D<br>6 D D 1<br>Pin1  G<br>5 D D 2<br>4 S S G 3<br>ESD PROTECTED An woe Gate Protection Diode S<br>Bottom View  Pin Out  Internal Schematic<br>Bottom View<br>g Information Information (Note 4)<br>Part Number Marking Reel Size (inches) Quantity Per Reel<br>DMP1022UFDE-7  P4  7  3,000<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

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Notes:<br>**----- End of picture text -----**<br>


2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|P4 = Product Type Marking Code|
|YM = Date Code Marking|
|P4|Y = Year (ex: E = 2017)|
|M = Month (ex: 9 = September)|
|Date Code Key|
|Year|2011|~|2015|2016|2017|2018|2019|2020|2021|2022|2023|
|Code|Y|~|C|D|E|F|G|H|I|J|K|
|ee|
|Month|Jan|Feb|Mar|Apr|May|Jun|Jul|Aug|Sep|Oct|Nov|Dec|
|Code|1|2|3|4|5|6|7|8|9|O|N|D|
|eS|
|DMP1022UFDE|1 of 8|
|Datasheet number: DS35477 Rev. 12 - 3|www.diodes.com|© Diodes Incorporated|

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October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF** 

**DMP1022UFDE** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-12|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-9.1<br>-7.2|A|
||t<5s|TA= +25°C<br>TA= +70°C|ID|-11.2<br>-9.0|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|-90|A|
|Continuous Source-Drain Diode Current||TA= +25°C<br>TC= +25°C|IS|-2.5<br>-7.1|A|
|Pulsed Source-Drain Diode Current(10μs Pulse,DutyCycle = 1%)|||ISM|-50|A|



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Thermal Characteristics<br>Characteristic  Symbol  Value  Unit<br>Total Power Dissipation (Note 5)  TA = +25°C  PD 0.66  W<br>TA = +70°C  0.42<br>Steady State 189<br>Thermal Resistance, Junction to Ambient (Note 5)  RθJA °C/W<br>t<5s 123<br>Total Power Dissipation (Note 6)  TA = +25°C  PD 2.03  W<br>TA = +70°C  1.3<br>Steady State  61<br>Thermal Resistance, Junction to Ambient (Note 6)  RθJA<br>t<5s  40  °C/W<br>Thermal Resistance, Junction to Case (Note 6) Steady State  RθJC 9.3<br>Operating and Storage Temperature Range  TJ, TSTG -55 to +150  °C<br>Notes:  5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.<br>6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.<br>**----- End of picture text -----**<br>


2 of 8 **www.diodes.com** 

DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 

October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF** 

**DMP1022UFDE** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~—————~~|**Symbol**<br>~~—————~~|**Min**<br>~~—————~~|**Typ **<br>~~—————~~|**Max**<br>~~—————~~|**Unit**<br>~~—————~~|**Test Condition**<br>~~—————~~|
|**OFF CHARACTERISTICS**(Note 7)<br>~~—————~~|||||||
|Drain-Source Breakdown Voltage<br>~~—————~~|BVDSS<br>~~—————~~|-12<br>~~—————~~|—<br>~~—————~~|—<br>~~—————~~|V<br>~~—————~~|VGS= 0V,ID= -250μA<br>~~—————~~|
|Zero Gate Voltage Drain Current(TJ= +25°C)<br>~~—————~~|IDSS<br>~~—————~~|—<br>~~—————~~|—<br>~~—————~~<br>~~GO~~|-200<br>~~—————~~<br>~~GO~~|nA<br>~~—————~~<br>~~QO~~|VDS= -12V,VGS= 0V<br>~~—————~~<br>~~QO~~|
|Zero Gate Voltage Drain Current(TJ= +55°C) (Note 8)<br>~~QO~~|IDSS<br>~~QO~~<br>~~ff~~|—<br>~~QO~~<br>~~ff~~|—<br>~~QO~~<br>~~GO~~<br>~~ff~~|-2<br>~~QO~~<br>~~GO~~<br>~~ff~~|µA<br>~~QO~~<br>~~QO~~|VDS= -12V,VGS= 0V<br>~~QO~~<br>~~QO~~|
|Gate-Source Leakage<br>~~Cf~~|IGSS<br>~~Cf~~<br>~~ff~~|—<br>~~Cf~~<br>~~ff~~|—<br>~~GO~~<br>~~Cf~~<br>~~ff~~|±2<br>~~GO ~~<br>~~Cf~~<br>~~ff~~|µA<br> ~~QO~~<br>~~Cf~~|VGS= ±5V,VDS= 0V<br>~~QO~~<br>~~Cf~~|
|**ON CHARACTERISTICS**(Note 7) <br>~~ff~~|||||||
|Gate Threshold Voltage<br>~~——————~~|VGS(TH)<br>~~——————~~|-0.35<br>~~——————~~|—<br>~~——————~~|-0.8<br>~~——————~~|V<br>~~——————~~|VDS= VGS,ID= -250μA<br>~~——————~~|
|VGS(TH)Temperature Coefficient<br>~~——————~~|ΔVGS(TH)/ΔTJ<br>~~——————~~|—<br>~~——————~~|2.5<br>~~——————~~|—<br>~~——————~~|mV/°C I<br>~~——————~~|mV/°C ID= -250μA<br>~~——————~~|
|On-State Drain Current<br>~~——————~~|ID(ON)<br>~~——————~~<br>~~||~~|-10<br>~~——————~~<br>~~|| EK~~|—<br>~~——————~~<br>~~EK~~|—<br>~~——————~~<br>~~EK~~|A<br>~~——————~~<br>~~EK~~|VGS= -4.5V,VDS< -5A<br>~~——————~~<br>~~EK~~|
|Static Drain-Source On-Resistance<br>~~|~~|RDS(ON)<br>~~|~~<br>~~||~~|—<br>~~|~~<br>~~|| EK~~|12<br>~~|~~<br>~~EK~~|16<br>~~|~~<br>~~EK~~|mΩ<br>~~|~~<br>~~EK~~<br>~~a~~|VGS= -4.5V,ID= -8.2A<br>~~|~~<br>~~EK~~|
||||15<br>~~|~~<br>~~EK~~|21.5<br>~~|~~<br>~~EK~~||VGS= -2.5V,ID= -7.2A<br>~~|~~<br>~~EK~~|
||||20<br>~~|~~<br>~~EK~~<br>~~a~~|26<br>~~|~~<br>~~EK~~<br>~~a~~||VGS= -1.8V,ID= -6.6A<br>~~|~~<br>~~EK~~<br>~~a~~|
||||23<br>~~|~~<br>~~EK~~<br>~~a~~|32<br>~~|~~<br>~~EK~~<br>~~a~~||VGS= -1.5V,ID= -1A<br>~~|~~<br>~~EK~~<br>~~a~~|
||||80<br>~~|~~<br>~~EK~~|160<br>~~|~~<br>~~EK~~||VGS= -1.2V,ID= -1A<br>~~|~~<br>~~EK~~|
|Forward Transfer Admittance||Yfs|<br>~~||~~|—<br>~~|| EK~~|12<br>~~EK~~|—<br>~~EK~~<br>~~ee~~|S<br>~~EK~~<br>~~ee~~|VDS= -4V,ID= -8.2A<br>~~EK~~<br>~~ee~~|
|Diode Forward Voltage<br>~~ff~~|VSD<br>~~ff~~|—<br>~~ff~~|-0.8<br>~~ff~~|-1.2<br>~~ff~~<br>~~ee~~|V<br>~~ff~~<br>~~ee~~|VGS= 0V,IS= -8A<br>~~ff~~<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~ee~~<br>~~> ose(Ee~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~<br>~~>~~|2,953<br>~~ee~~<br>~~> ose~~|—<br>~~ee~~<br>~~ose~~|pF<br>~~ee~~<br>~~ose(Ee~~|VDS= -4V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~<br>~~(Ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~<br>~~>~~|756<br>~~ee~~<br>~~> ose~~|—<br>~~ee~~<br>~~ose~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~<br>~~>~~|678<br>~~ee~~<br>~~> ose~~|—<br>~~ee~~<br>~~ose~~|||
|Gate Resistance|Rg|—<br>~~>~~|8.6<br>~~> ose~~|18<br>~~ose~~|Ω<br>~~ose (Ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~(Ee~~|
|Total Gate Charge|Qg|—|28.4|42.6|nC|VGS= -5V,VDS= -4V,ID= -10A|
|Total Gate Charge|Qg|—|25.3|38||VGS= -4.5V, VDS= -4V,<br>ID= -10A<br>~~ee~~|
|Gate-Source Charge|Qgs|—|2.3|—|||
|Gate-Drain Charge|Qgd<br>~~>~~|—<br>~~>~~|7.2<br>~~>~~|—|||
|Turn-On DelayTime<br>~~—<—<—<~~|tD(ON)<br>~~—<—<—<~~<br>~~>~~|—<br>~~—<—<—<~~<br>~~>~~|20<br>~~—<—<—<~~<br>~~>~~|30<br>~~—<—<—<~~|ns<br>~~—<—<—<~~|VDS= -4V, VGS= -4.5V,<br>RG= 1Ω, RL= 0.4Ω, ID= -9.8A<br>~~—<—<—<~~<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—<—<~~|tR<br>~~—<—<—<~~<br>~~>~~|—<br>~~—<—<—<~~<br>~~>~~|28<br>~~—<—<—<~~<br>~~>~~|42<br>~~—<—<—<~~|||
|Turn-Off DelayTime<br>~~—<—<—<~~|tD(OFF)<br>~~—<—<—<~~<br>~~>~~|—<br>~~—<—<—<~~<br>~~>~~|117<br>~~—<—<—<~~<br>~~>~~|176<br>~~—<—<—<~~|||
|Turn-Off Fall Time<br>~~—<—<—<~~|tF<br>~~—<—<—<~~<br>~~>~~|—<br>~~—<—<—<~~<br>~~>~~|93<br>~~—<—<—<~~<br>~~>~~|139<br>~~—<—<—<~~|||
|**BODY DIODE CHARACTERISTICS**<br>~~>~~<br>~~ee~~<br>~~Por~~<br>~~lw~~<br>~~fe~~|||||||
|Diode Forward Voltage<br>~~Por~~<br>~~lw~~<br>~~a~~|VSD<br>~~fe~~<br>~~eS~~|—<br>~~fe~~|-0.8|-1.2|V|VGS= 0V,IS= -9.8A|
|Continuous Source-Drain Diode Current (Note 6)<br>~~Por~~<br>~~lw~~<br>~~EE~~<br>~~a~~|IS<br>~~fe~~<br>~~EE~~<br>~~eS~~|—<br>~~fe~~<br>~~EE~~|—<br>~~EE~~|-2.5<br>~~EE~~|A<br>~~EE~~<br>~~ee~~|TA= +25°C<br>~~EE~~|
|||—<br>~~EE~~|—<br>~~EE~~|-7.1<br>~~EE~~||TC= +25°C<br>~~EE~~|
|Pulse Diode Forward Current(Note 8)<br>~~EE~~<br>~~a~~<br>~~——~~|ISM<br>~~EE~~<br>~~eS~~<br>~~ee~~|—<br>~~EE~~<br>~~ee~~|—<br>~~EE~~<br>~~ee~~|-50<br>~~EE~~<br>~~ee~~||—<br>~~EE~~<br>~~ee~~<br>~~ee~~|
|BodyDiode Reverse RecoveryTime(Note 8)<br>~~a ~~<br>~~a~~<br>~~——~~|tRR<br> ~~eS~~<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|28<br>~~a~~<br>~~ee~~|56<br>~~a~~<br>~~ee~~|ns   I<br>~~ee~~|ns   IS= -9.8A, dI/dt = 100A/μs<br>~~ee~~<br>~~ee~~|
|Reverse RecoveryFall Time<br>~~——~~|tA<br>~~ee~~|—<br>~~ee~~|10<br>~~ee~~|—<br>~~ee~~|||
|Reverse RecoveryRise Time<br>~~——~~|tB<br>~~ee~~|—<br>~~ee~~|18<br>~~ee~~|—<br>~~ee~~|||
|BodyDiode Reverse RecoveryCharge(Note 8)<br>~~——~~|QRR<br>~~ee~~|—<br>~~ee~~|13<br>~~ee~~|26<br>~~ee~~|nC<br>~~ee~~||



3 of 8 **www.diodes.com** 

DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 

October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF** 

**DMP1022UFDE** 

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100 100<br>SSSSieaPN?eeee COOa OOOOOmetOOOO OY,0”ceeens  aER PW = 10µs maeTT] 90 a Single Pulse RJA = 61C/W ll<br>RDS(on) 80 R JA(t)  = r (t)  * R JA<br>10 | Limited ANUa NYNUT | | TJ - TA = P * RJA(t)<br>5FSHre ee eeseaQRCEPERRNRNANTON TNET 70 a |<br>DC<br>oe[tT pt ARSNNUAL SSEPtPT TTT |<br>Olli P W  = 10s TIRANA 60<br>PW = 1s<br>1 Laegtzaltt PW = 100ms SOOKENWINFNFNS PE 50 ee<br>=aars ee PWP= W  10ms = 1ms P W = 100 PN 祍 µs NANTLANDaseh SeER 40 \<br>30<br>0.1 SR a BLU AAUA:<br>=SSSSe 20 SEANP<br>Tygmax) = 150°C, YHHH NI<br>Ty = 25°C a \<br>10<br>0.01 SingePuse iE 0 CT MATT CITE Tri<br>0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>-VDS, DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (sec)<br>Fig. 1 SOA, Safe Operation Area Fig. 2 Single Pulse Maximum Power Dissipation<br>1 LeenaSS D = 0.7 ene ee eee nnnetnee nee eeeeee eee nnn nee eee neee enneeee ee ee SS eeeeieeeta eee<br>Pr D = 0.5<br>DN D = 0.3 erSPlr |<br>0.1 eSBEa D = 0.1 eeEL SaaSey,A D = 0.9 kTSS SOer<br>a a 8 c/a 2 ee<br>D = 0.05<br>FA dentcen a 74AO TT aT<br>Hie S| I TT PS<br>oe D = 0.02 et<br>re<br>0.01 eee A AS<br>be D = 0.01 eee eee eee ee ee eee ee<br>a ee<br>a a OG 2 a 0 2 Oe |<br>tpi D = 0.005 a cesNe  OPag ataa 8 ttt R R  JA JA( = t 61 ) 61 =r 癈 ( ° t C/W ) * R /W JA ETT[TTT<br>inh NN | mal<br>Duty Cycle, D=t1/ t2<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES t1, PULSE DURATION TIME (sec)<br>Fig. 3 Transient Thermal Resistance<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, PEAK TRANSIENT POIWER (W)<br>(PK)<br>P<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


4 of 8 **www.diodes.com** 

DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 

October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF** 

**DMP1022UFDE** 

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30 20<br>VGS = -8.0V<br>VDS = -5.0V<br>25 2 V GS = -4.5V 16<br>VGS = -2.5V<br>20 VGS = -2.0V<br>VGS = -1.8V 12<br>15 Wofoe ooeeoo<br>VGS = -1.5V 8<br>10 | oe<br>| 4 fe TA = 150C TA = 85C YN<br>5 TA = 125C TA = 25C<br>VGS = -1.2V TA = -55C<br>0 0<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0<br>Poco -VDS, DRAIN -SOURCE VOLTAGE(V) 7) -VGS, GATE-SOURCE VOLTAGE (V)  an<br>Fig. 4 Typical Output Characteristics Fig. 5 Typical Transfer Characteristics<br>0.06 0.030<br>VGS= -4.5V<br>0.05 PTET 0.025 Ce<br>0.04 0.020<br>SVeeeer n\ \A> se TA = 150C<br>TA = 125C<br>0.03 pSEEK\\ 3 0.015 == TA = 85C<br>TA = 25C<br>0.02 Tey 0.010 CRE T A  = -55C<br>=<br>0.01 0.005<br>SSN<br>0 0<br>0 5 10 15 20 25 30 0 4 8 12 16 20<br>KGS -ID, DRAIN SOURCE CURRENT (A) -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 6 Typical On-Resistance vs.  Fig. 7 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.7 0.04<br>1.5<br>ene 0.03<br>1.3 =A ae<br> OEP<br>VGS  -2= .5V<br>1.1 0.02 ID  -5= A<br>0.9 et VGS = -4.5V<br>Parr ID  -10= A<br>0.01<br>0.7 AT<br>0.5 COATT 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 8 On-Resistance Variation with Temperature Fig. 9  On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>DS(ON)<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


5 of 8 **www.diodes.com** 

DMP1022UFDE 

October 2017 © Diodes Incorporated 

Datasheet number: DS35477 Rev. 12 - 3 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF** 

**DMP1022UFDE** 

**==> picture [486 x 647] intentionally omitted <==**

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1.4 20<br>1.2<br>ToT ee<br>16<br>1.0 CPAP EE<br>0.8 Cer 12 eeefF —<br>0.6<br>8<br>0.4 Zpeste SO — |  ERee,IN<br>4<br>0.2<br>ttt yy Ss 7 Na<br>0 COPE 0 CNS<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE  ( °C 癈 ) RSW -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 10 Gate Threshold Variation vs. Ambient Temperature Fig. 11 Diode Forward Voltage vs. Current<br>4,000 100,000<br>3,500 f = 1MHz<br>3,000 [nA)] (T<br>2,500 C iss [N] RE 10,000 T   = 150°CA<br>R<br>U<br>C<br>2,000 T   = 125°CA<br>1,500<br>1,000<br>L [EAKAGE]<br>1,000 QOTIEM Coss . -, [I] SSD Me= = T   = 85°CA<br>500<br>Crss T   = 25°CA<br>LS<br>0 100<br>0 3 6 9 12 15 0 2 4 6 8 10 12<br>low -VDS, DRAIN-SOURCE VOLTAGE (V) X< ft -V    , DRAIN-SOURCE VOLTAGE(V)DS<br>Fig. 12 Typical Junction Capacitance Fig. 13 Typical Drain-Source Leakage Current vs. Voltage<br>8 Ne<br>6<br>4<br>Sail<br>2 ALLL<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 14 Gate-Charge Characteristics<br>, GATE THRESHOLD VOLTAGE(V)<br>GS(TH)<br>V<br>S<br>, SOURCE CURRENT (A)<br>-I<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


6 of 8 **www.diodes.com** 

DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 

October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF** 

**DMP1022UFDE** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type E)** 

**==> picture [454 x 479] intentionally omitted <==**

**----- Start of picture text -----**<br>
A3 U-DFN2020-6<br>A1 (Type E)<br>A Dim  Min  Max  Typ<br>A  0.57  0.63 0.60<br>A1  0 0.05 0.03<br>‘eel Feee A3    0.15<br>b 0.25 0.35 0.30<br>D<br>b1  0.185 0.285 0.235<br>D  1.95 2.05 2.00<br>D2  0.85 1.05 0.95<br>E  1.95 2.05 2.00<br>b1 K1 E2  1.40 1.60 1.50<br> e    0.65<br>D2 L  0.25 0.35 0.30<br>E E2 L 1 L(2X) K1 K2 L1  0.82  0.92  0.305 0.225 0.87<br>SS Z    : 0.20<br>K2<br>All Dimensions in mm<br>Z(4X) e b(6X)<br>a<br>Suggested Pad Layout<br>  Please see http://www.diodes.com/package-outlines.html for the latest version.<br>U-DFN2020-6 (Type E)<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>EY<br>X  0.400<br>X1  0.285<br>X2  1.050<br>X2<br>Y3 Y2 Y1 Y  0.500<br>Y1  0.920<br>Y2  1.600<br>X1 Y3 2.300<br>X (6x) ‘ C i Y (2x)<br>**----- End of picture text -----**<br>


7 of 8 **www.diodes.com** 

DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 

October 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP1005UFDF** 

**DMP1022UFDE** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings > noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express we written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: WS 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the NK failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related oN information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. g Copyright © 2017, Diodes Incorporated **www.diodes.com** 

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DMP1022UFDE Datasheet number: DS35477 Rev. 12 - 3 

October 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP1022UFDE-7/power-mosfet-p-channel-12-v-91-a-0012-ohm-u)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp1022ufde-7/mosfet-p-ch-12v-9-1a-u-dfn2020/dp/3943691RL)
---

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