# Power MOSFET, P Channel, 8 V, 10 A, 8200 µohm, U-WLB1515, Surface Mount

![Product image](https://novapart.co/image/farnell:3943688/)

**URL**: https://novapart.co/products/DMP1011UCB9-7/power-mosfet-p-channel-8-v-10-a-8200-ohm-u-wlb1515
**SKU**: DMP1011UCB9-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2220
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 9Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 890mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | U-WLB1515 |
| Drain Source Voltage Vds | 8V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 8200µohm |
| Gate Source Threshold Voltage Max | 800mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943688/)

**DMP1011UCB9** [ **P-CHANNEL ENHANCEMENT MODE MOSFET** 

**Product Summary** (Typ. @ VGS = -4.5V, TA = +25°C) 

|**BVDSS**|**RDS(ON)**|**Qg**|**Qgd**|**ID**|
|---|---|---|---|---|
|-8V|8.2mΩ|8.1nC|1.8nC|-10A|



## **Features** 

- LD-MOS Technology with the Lowest Figure of Merit: 

- -RDS(ON) = 8.2mΩ to Minimize On-State Losses 

- -Qg = 8.1nC for Ultra-Fast Switching 

- VGS(th) = -0.8V Typ. for a Low Turn-On Potential 

## **Description** 

This 3[rd] generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. 

- CSP with Footprint 1.5mm × 1.5mm 

- Height = 0.60mm for Low Profile 

- ESD = 6kV HBM Protection of Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- DC-DC Converters 

- Battery Management 

## **Mechanical Data** 

   - Case: U-WLB1515-9 

   - Terminal Connections: See Diagram Below 

- Load Switch 

- **U-WLB1515-9 (Type B)** 

**==> picture [200 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Top View  Drain<br>Pin Configuration Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|(Note 4)||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP1011UCB9-7|U-WLB1515-9(Type B)|3,000/Tape & Reel|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

**U-WLB1515-9 (Type B)** 

NX = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: G = 2019) M or M = Month (ex: 9 = September) 

Date Code Key 

|Code KeyKeyey|||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Year**|**2012**|||**2013**|**2014**|||**2015**|**2016**|||**2017**|**2018**|||**2019**|
|**Code**|Z|||A|B|||C|D|||E|F|||G|
||||||||||||||||||
|**Month**|**Jan**|**Feb**||**Mar**|**Apr**|**May**||**Jun**|**Jul**|**Aug**||**Sep**|**Oct**|**Nov**||**Dec**|
|**Code**|1|2||3|4|5||6|7|8||9|O|N||D|



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**DMP1011UCB9** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-8|V|
|Gate-Source Voltage|||VGSS|-6|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-10<br>-8|A|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-7.4<br>-6.0|A|
|Pulsed Drain Current(Pulse Duration 10μs,DutyCycle ≤1%)|||IDM|-50|A|
|Continuous Source Pin Current(Note 6)|||IS|-2|A|
|Pulsed Source Pin Current(Pulse Duration 10µs,DutyCycle ≤1%)|||ISM|-15|A|
|Continuous Gate Current|||IG|-0.5|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|0.89|W|
|Total Power Dissipation(Note 6)|PD|1.57|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|142.1|°C/W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|80.5|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-8|—|—|V|VGS= 0V,ID= -250μA|
|Gate to Source Voltage|BVSGS|6|—|—|V|VDS= 0V,IS= 250μA|
|Zero Gate Voltage Drain Current                 @TC= +25°C|= +25°C<br>IDSS|—|—|-1|μA|VDS= -4.0V, VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|-100|nA|VGS= -4.0V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **|||||||
|Gate Threshold Voltage|VGS(TH)|-0.4|-0.8|-1.1|V|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance|RDS(ON)|—|8.2|10|mΩ|VGS= -4.5V,ID= -2A|
||||10|13||VGS= -3.0V,ID= -2A|
||||11|14||VGS= -2.5V,ID= -2A|
|Forward Transfer Admittance||Yfs||—|16.8|—|S|VDS= -4V,ID= -2A|
|Diode Forward Voltage(Note 6)|VSD|—|-0.7|-1|V|VGS= 0V,IS= -2A|
|Reverse RecoveryCharge|QRR|—|6.3|—|nC|VDD= -5V, IF= -2A,<br>di/dt = 200A/μs|
|Reverse RecoveryTime|tRR|—|18.5|—|ns||
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~i~~|||||||
|Input Capacitance<br>~~i~~|Ciss<br>~~i~~|—<br>~~i~~|817<br>~~i~~|1,060<br>~~i~~|pF<br>V<br>~~i~~|VDS= -4V, VGS= 0V,<br>f = 1.0MHz<br>~~i~~|
|Output Capacitance<br>~~i~~|Coss<br>~~i~~|—<br>~~i~~|595<br>~~i~~|770<br>~~i~~|V<br>f = 1.0MHz<br>pF<br>~~i~~||
|Reverse Transfer Capacitance<br>~~i~~|Crss<br>~~i~~|—<br>~~i~~|269<br>~~i~~|350<br>~~i~~|f = 1.0MHz<br>pF<br>~~i~~||
|Series Gate Resistance|RG|—|1.9|—|Ω<br>V|VDS= 0V,VGS= 0V,f = 1.0MHz|
|Total Gate Charge|Qg|—|8.1|10.5|nC<br>V|VGS= -4.5V, VDS= -4V,<br>ID= -2A<br>~~ee~~|
|Gate-Source Charge|Qgs|—|0.9|—|V<br>I<br>nC||
|Gate-Drain Charge<br>~~—<—~~|Qgd|—|1.8|—<br>~~ee~~|I<br>nC<br>~~ee~~||
|Turn-On DelayTime<br>~~—<—~~|tD(ON)|—|6.2|10<br>~~ee~~|ns<br>~~ee~~|VDD= -4V, VGS= -4.5V,<br>IDS= -2A, RG= 10Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—~~|tR|—|22.6|—<br>~~ee~~|V<br>ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<—~~|tD(OFF)|—|30.1|48<br>~~ee~~|I<br>ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<—~~|tF|—|22.7|—<br>~~ee~~|ns<br>~~ee~~||



Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Device mounted on FR-4 material with 1-inch[2 ] (6.45cm[2] ), 2oz (0.071mm thick) Cu. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

2 of 6 **www.diodes.com** 

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**DMP1011UCB9** 

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**----- Start of picture text -----**<br>
20.0 10<br>18.0 VDS = -5.0V<br>16.0 V GS = -4.5V 8<br>14.0 VGS = -4.0V<br>VGS = -2.5V<br>12.0 6<br>fe VGS = -2.0V<br>10.0 VGS = -1.5V TA = 150C<br>8.0 4 T A = 125C TA = 85C<br>6.0 TA = 25C<br>TA = -55C<br>4.0 ee 2<br>2.0 po<br>V GS = -1.2V<br>0.0 VGS = -1.0V 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2<br>VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.1 2.5<br>0.09<br>TS Oooo<br>0.08 2<br>0.07<br>VGS = -2.5V<br>0.06 1.5 I D  = -1A<br>0.05 ID = -2.0A<br>a Co<br>0.04 oo 1<br>0.03 VGS = -4.5V<br>ID = -3A<br>0.02 0.5<br>peo pe<br>0.01<br>0 Sere 0<br>1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150<br>VGS, GATE-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C)<br>Figure 3 Typical Transfer Characteristic Figure 4 On-Resistance Variation with Temperature<br>1 10<br>8<br>0.8 SW<br>-ID = 250 礎<br>6<br>-ID = 1mA TA = 150C<br>0.6 TA = 125C TA = 85C<br>SP 4<br>TA = 25C<br>TA = -55C<br>0.4<br>SOT 2<br>0.2 Sennen 0 a<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>TA, AMBIENT TEMPERATURE  ( °C 癈 ) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 5 Gate Threshold Variation  Figure 6 Diode Forward Voltage vs. Current<br>vs. Ambient Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, DRAIN CURRENT (A)<br>ID<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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10000 a<br>f = 1MHz<br>—<br>po<br>SSESSSE=<br>1000 Ciss<br>||| | |_| |_|<br>SSatH Ht— Coss eeee |<br>Crss<br>100<br>EPP Trt<br>ee ee ee re<br>[<br>===<br>10<br>Pot ot | EE Et<br>0 1 2 3 4 5 6 7 8<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 7 Typical Junction Capacitance<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**==> picture [206 x 212] intentionally omitted <==**

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4.5<br>4 /<br>3.5 a<br>3<br>VDS = -4V /<br>2.5 rot) ID = -2A OUST<br>2<br>1.5<br>Pot 7D [fT]<br>1 [|<br>0.5 7-1<br>0<br>0 pot 2 | 4 ft 6 | 8 10<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 8 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100<br>RDS(on) SSSe<br>Limited<br>ee NS {I<br>Pf EIT Pe INS |<br>10 ON NET<br>at<br>|re eteX MRTT DC SS PW = 10s |NANANUANRNSROATN,NON STOTTTEEi<br>1 ell PW = 1s SAN<br>—— ENNIS PW = 100ms<br>Eiee a 7 PW = 10ms PW ENS  = 1ms TOS ENT<br>Pt TTT PW =  100 祍 µs NN i<br>0.1 TJ(max) =  150 癈 °C ees |<br>TA = 2525°C 癈 a a a OO<br>V GS  = 4.5V -4.5V a a<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.01 THI Eo<br>0.01 0.1 1 10<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 SOA, Safe Operation Area<br>1<br>EPP yepSerTT<br>D = 0.7<br>D = 0.5<br>SSaa a ea<br>0.1 POLIAa D = 0.3 D = 0.1 Se TMeeomeZcLAIINE TAINIIETEI UE|EU<br>D = 0.05<br>A<br>7 A |<br>ee D = 0.02<br>0.01 Pe Mh |<br>PT D = 0.01 mL TIM NITE TATE ETI UTE LET<br>Po eer<br>AEERE<br>D = 0.005<br>Ee R JA (t) = r(t) * R JA TITmail<br>A R JA  = 11 3 88 癈 °C// W<br>Single Pulse<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000 10000<br>t1, PULSE DURATION TIMES t1, PULSE DURATION TIME (sec)<br>Figure 10  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMP1011UCB9 Document number: DS37852  Rev. 5 - 2 

September 2019 © Diodes Incorporated 

**DMP1011UCB9** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-WLB1515-9 (Type B)** 

|Pin #1  ID|Pin #1  ID|D|D|E<br>e<br>9x-Ø b<br>A2<br>A<br>A3<br>e<br>~~is~~|E<br>e<br>9x-Ø b<br>A2<br>A<br>A3<br>e<br>~~is~~|E<br>e<br>9x-Ø b<br>A2<br>A<br>A3<br>e<br>~~is~~|E<br>e<br>9x-Ø b<br>A2<br>A<br>A3<br>e<br>~~is~~|E<br>e<br>9x-Ø b<br>A2<br>A<br>A3<br>e<br>~~is~~|E<br>e<br>9x-Ø b<br>A2<br>A<br>A3<br>e<br>~~is~~|E<br>e<br>9x-Ø b<br>A2<br>A<br>A3<br>e<br>~~is~~|E<br>e<br>9x-Ø b<br>A2<br>A<br>A3<br>e<br>~~is~~|E<br>e<br>9x-Ø b<br>A2<br>A<br>A3<br>e<br>~~is~~|||e<br>e|**Dim**<br>**A**<br>**A2**<br>**A3**<br>**b**<br>**D**<br>**E**<br>**e**<br>**All Dimensions in mm**|**U-WLB1515-9**<br>**(Type B)**<br>**Min**<br>**Max**<br>--<br>0.60<br>--<br>0.36<br>0.020<br>0.030 <br>0.22<br>0.32<br>1.47<br>1.50<br>1.47<br>1.50<br>--<br>--<br>**All Dimensions in mm**|**U-WLB1515-9**<br>**Typ**<br>--<br>0.36<br>0.025<br>0.27<br>1.49<br>1.49<br>0.50<br>**All Dimensions in mm**|**U-WLB1515-9**<br>**Typ**<br>--<br>0.36<br>0.025<br>0.27<br>1.49<br>1.49<br>0.50<br>**All Dimensions in mm**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||
|||SEATING PLANE||||||||||||||||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-WLB1515-9 (Type B)** 

**==> picture [145 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>C1<br>C<br>C<br>C2<br>oe<br>**----- End of picture text -----**<br>


|**Dimensions**<br>**C**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.50|
|**C1**|1.00|
|**C2**|1.00|
|**D**|0.25|



5 of 6 **www.diodes.com** 

DMP1011UCB9 Document number: DS37852  Rev. 5 - 2 

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**DMP1011UCB9** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1.  are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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DMP1011UCB9 Document number: DS37852  Rev. 5 - 2 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMP1011UCB9-7/power-mosfet-p-channel-8-v-10-a-8200-ohm-u-wlb1515)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp1011ucb9-7/mosfet-p-ch-8v-10a-u-wlb1515/dp/3943688)
---

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