# Power MOSFET, P Channel, 12 V, 11 A, 8300 µohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3943687/)

**URL**: https://novapart.co/products/DMP1009UFDFQ-7/power-mosfet-p-channel-12-v-11-a-8300-ohm-u
**SKU**: DMP1009UFDFQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1780
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 8300µohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943687/)

**DMP1009UFDFQ 12V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|---|---|---|
|-12V|11m@ VGS= -4.5V|-11A|
||14mΩ @ VGS= -3.7V|-9.7A|
||19mΩ @ VGS= -2.5V|-8.3A|
||30mΩ @ VGS= -1.8V|-6.6A|



## **Features** 

- 0.6mm Profile – Ideal for Low Profile Applications 

- PCB Footprint of 4mm[2] 

- Low On-Resistance 

- Fast Switching Speed 

- 100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliability 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. "Green" Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

- Battery Management Application 

- Power Management Functions 

- DC-DC Converters 

- **PPAP Capable (Note 4)** 

## **Mechanical Data** 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.007 grams (Approximate) 

U-DFN2020-6 (Type F) 

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## Top View 

Bottom View 

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## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMP1009UFDFQ-7|U-DFN2020-6(Type F)|3,000/Tape & Reel|
|DMP1009UFDFQ-13|U-DFN2020-6 (TypeF)|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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FZ = Product Type Marking Code<br>YM = Date Code Marking<br>FZ<br>Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2017 2018 2019 2020 2021 2022 2023 2024<br>ee Code E  F  G  H  I  J  K  L<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>——ee Code 1  2  3 4  5 6 7  8 9 O ee N  D<br>DMP1009UFDFQ 1 of 7  May 2019<br>Datasheet number: DS41367  Rev. 2 - 2 www.diodes.com   © Diodes Incorporated<br>YM<br>**----- End of picture text -----**<br>


**DMP1009UFDFQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-12|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current  VGS= -4.5V (Note 7)|Steady<br>State|TA= +25°C|ID|-11|A|
|||TA= +70°C||-8.7||
||t<5s|TA= +25°C|ID|-15|A|
|||TA= +70°C||-12||
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|-70|A|
|Maximum Body Diode Continuous Current (Note 7)|||IS|-2.5|A|
|Avalanche Current(Note 8)L = 0.1mH|||IAS|-24|A|
|Avalanche Energy (Note 8)L = 0.1mH|||EAS|31|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics **|**Thermal Characteristics **||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|0.8|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RJA|152|°C/W|
||t<5s||81||
|Total Power Dissipation(Note 7)|TA= +25°C|PD|2.0|W|
|Thermal Resistance, Junction to Ambient (Note 7)|SteadyState|RJA|63|°C/W|
||t<5s||34||
|Thermal Resistance, Junction to Case(Note 7)|SteadyState|RJC|15||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 9) **|||||||
|Drain-Source Breakdown Voltage<br>~~—————~~|BVDSS<br>~~—————~~|-12<br>~~—————~~|—<br>~~—————~~|—<br>~~—————~~|V<br>~~—————~~|VGS= 0V,ID= -250μA<br>~~—————~~|
|Zero Gate Voltage Drain Current<br>~~—————~~|IDSS<br>~~—————~~|—<br>~~—————~~|—<br>~~—————~~|-100<br>~~—————~~|nA<br>~~—————~~|VDS= -9.6V,VGS= 0V<br>~~—————~~|
|Gate-Source Leakage<br>~~—————~~|IGSS<br>~~—————~~|—<br>~~—————~~|—<br>~~—————~~|±100<br>~~—————~~|nA<br>~~—————~~|VGS= ±8V,VDS= 0V<br>~~—————~~|
|**ON CHARACTERISTICS(Note 9) **<br>~~—————~~|||||||
|Gate Threshold Voltage|VGS(TH)|-0.3<br>~~ES~~|—<br>~~ES~~|-1.0<br>~~ES~~|V<br>~~ES~~|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~|~~|RDS(ON)<br>~~|~~|—<br>~~|~~<br>~~ES~~|8.3<br>~~|~~<br>~~ES~~|11<br>~~|~~<br>~~ES~~|m<br>~~|~~<br>~~ES~~|VGS= -4.5V,ID= -5A<br>~~|~~|
||||9<br>~~|~~<br>~~ES~~|14<br>~~|~~<br>~~ES~~||VGS= -3.7V,ID= -5A<br>~~|~~|
||||12<br>~~|~~<br>~~ES~~|19<br>~~|~~<br>~~ES~~||VGS= -2.5V,ID= -4A<br>~~|~~|
||||16<br>~~|~~<br>~~ES~~|30<br>~~|~~<br>~~ES~~||VGS= -1.8V,ID= -1A<br>~~|~~|
|Diode Forward Voltage<br>~~|~~|VSD<br>~~|~~|—<br>~~|~~<br>~~ES~~|-0.8<br>~~|~~<br>~~ES~~|-1.2<br>~~|~~<br>~~ES~~|V<br>~~|~~<br>~~ES~~|VGS= 0V,IS= -10A<br>~~|~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~ES~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~es~~|1860<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~ee~~|VDS= -10V, VGS= 0V,<br>f = 1.0MHz<br>~~es~~<br>~~ee~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~|498<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|—<br>~~es~~|416<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|||
|Gate Resistance|Rg<br>~~ee~~|—|11<br>~~ee~~|—<br>~~ee~~|<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~eee~~|Qg<br>~~eee~~|—<br>~~eee~~|26<br>~~eee~~|—<br>~~eee~~|nC<br>~~eee~~|VDS= -6V, ID= -10A<br>~~eee~~|
|Total Gate Charge(VGS= -8V)<br>~~eee~~|Qg<br>~~eee~~|—<br>~~eee~~|44<br>~~eee~~|—<br>~~eee~~|||
|Gate-Source Charge<br>~~eee~~|Qgs<br>~~eee~~|—<br>~~eee~~|3.3<br>~~eee~~|—<br>~~eee~~|||
|Gate-Drain Charge<br>~~eee~~|Qgd<br>~~eee~~|—<br>~~eee~~|8.1<br>~~eee~~|—<br>~~eee~~|||
|Turn-On DelayTime<br>~~eee~~|tD(ON)<br>~~eee~~|—<br>~~eee~~|7.0<br>~~eee~~|—<br>~~eee~~|ns<br>~~eee~~<br>~~rr~~|VDS= -6V, VGS= -4.5V,<br>Rg= 1Ω, ID= -8A<br>~~eee~~<br>~~rr~~|
|Turn-On Rise Time<br>~~eee~~|tR<br>~~eee~~|—<br>~~eee~~|10.6<br>~~eee~~|—<br>~~eee~~|||
|Turn-Off DelayTime<br>~~eee~~|tD(OFF)<br>~~eee~~|—<br>~~eee~~|62.2<br>~~eee~~|—<br>~~eee~~|||
|Turn-Off Fall Time<br>~~eee~~<br>~~rr~~|tF<br>~~eee~~<br>~~rr~~|—<br>~~eee~~<br>~~rr~~|61<br>~~eee~~<br>~~rr~~|—<br>~~eee~~<br>~~rr~~|||
|Reverse RecoveryTime<br>~~rr~~|tRR<br>~~rr~~|—<br>~~rr~~|34.4<br>~~rr~~|—<br>~~rr~~|ns<br>~~rr~~|IF= -12A, di/dt = 500A/μs<br>~~rr~~|
|Reverse RecoveryCharge<br>~~rr~~|QRR<br>~~rr~~|—<br>~~rr~~|28.1<br>~~rr~~|—<br>~~rr~~|nC<br>~~rr~~||



9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

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**DMP1009UFDFQ** 

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30.0   20<br> VGS = -1.8V  VDS = -3V<br>25.0   Ke  VGS = -2.0V  :<br> VGS = -2.5V  15<br>20.0   fe  VGS = -3.0V  e d p<br> VGS = -3.5V<br>15.0    VGS = -4.0V  10<br>fe  VGS = -4.5V   VGS = -1.5V  ee |<br>10.0<br>| ———_—_—soOC“f 5  f TJ = 125 ℃<br>5.0   TJ = 85 ℃<br>| Aen  VGS = -1.1V   VGS = -1.2V  TJ = 150 ℃ yy TJ = 25 ℃<br>TJ = -55 ℃<br>0.0   ar 0  Y,<br>0  0.2 0.4 0.6 0.8  1  1.2 1.4 1.6 1.8  2  0  0.5  1  1.5  2<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.04  0.04<br>0.035  ID = -5.0A<br>0.03  Pf [| | | ff 0.03  Ste<br>een 0.025  ee e<br> VGS = -1.8V<br>0.02  ee ae 0.02  PTV}<br> VGS = -2.5V  0.015<br>ae FE ed<br>0.01  0.01<br>ID = -1.0A<br>——  VGS = -4.5V  —  V — GS = -3.7V  0.005  PTW | | ty fd<br>0  Ter £17 0  HEE= ___EEE<br>0  5  10  15  20  25  30  0  1  2  3  4  5  6  7  8<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.016  1.5<br>VGS = -4.5V   VGS = -4.5V, ID = -5A<br>0.014<br>TT TJ = 125 ℃ TJ = 150 ℃ 5<br>0.012<br>1.2<br>0.01  eS | le<br>TJ = 85 ℃<br>0.008  Fo TJ = 25 ℃  VGS = -2.5V, ID = -4A<br>0.006  SS eS TJ = -55 ℃ 0.9  | e<br>0.004  = = ber<br>0.002<br>P F TL<br>0  Ff | |TT 0.6<br>0  5  10  15  20  25  30  -50  -25  0  25  50  75  100  125  150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)  , DRAIN CURRENT (A)<br>ID ID<br>)<br>)  <br> , DRAIN-SOURCE ON-RESISTANCE (<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>DS(ON) R<br>R<br>)<br><br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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**DMP1009UFDFQ** 

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0.02  1<br>0.018<br>0.016  a 0.8  on TTI<br>a ~ ID = -1mA<br>0.014   VGS = -2.5V, ID = -4A<br>0.012  ae 0.6  Su<br>0.01  ee ID = -250μA  = =<br>0.008  aan  VGS = -4.5V, ID = -5A  0.4  oo<br>—— eee ™>*&&”W<br>0.006<br>0.004  a oe — 0.2  R R<br>0.002  a<br>0  TITS 0  TTT TTT yy<br>-50  -25  0  25  50  75  100  125  150  -50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature  Figure 8. Gate Threshold Variation vs. Junciton<br>Temperature<br>30  10000<br>VGS = 0V  f = 1MHz<br>25  eee |e —— ae<br>Ciss<br>20  e e | aSee SE ee<br>| We<br>15  1000   Coss<br>YP NT<br>10  e/a ee—————| C ee rss<br>TJ = 125 ℃ DTK TJ = 85 ℃ S S ————<br>5  TJ = 150 ℃ Yi TJ = 25 ℃ oo oa<br>Ypa es<br>TJ = -55 ℃<br>0  YZ, 100   Ft tT tT tt<br>0  0.3  0.6  0.9  1.2  0  2  4  6  8  10  12<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>8  100<br>RDS(ON) Limited  PW = 100µs<br>PTI SN<br>6  Pp] | Lf 10  eet oe Np<br>4  Pt Tf | 1  Pe PW = 1ms  DSRNA Ne<br>PW = 10ms<br>PW = 100ms<br>PW = 1s<br>2  VDS = -6V, ID = -10A  0.1  ail NUE<br>TSingle Pulse J(Max) = 150 ℃  TC = 25 ℃ PW = 10s<br>DUT on 1*MRP Board  DC  el<br>a aml VGS = -4.5V  N WNMl<br>0  0.01<br>0  10  20  30  40  50  0.01  0.1  1  10  100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMP1009UFDFQ Datasheet number: DS41367  Rev. 2 - 2 

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**DMP1009UFDFQ** 

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1  SSS SSS SSS SSS SSS<br>s D=0.7  s ee<br>a a tm | | | gem) tT<br>B D=0.5  I TTT<br>T D=0.3  mmeer NTTNT<br>0.1  o m D=0.9<br>EO D=0.1  | HIE ulEAI<br>e s ER a”77rnA<br>D=0.05<br>F B OTe oT oe<br>D=0.02<br>Seen  nnnST<aeEnanEELTITnaa aE<br>0.01  E 2dA<br>D=0.01<br>P A<br>er AA a<br>F D=0.005  TTHLTT<br>ae [Aoi] RθJA(t) = r(t) * RθJA<br>D=Single Pulse  RθJA = 1 0049 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP1009UFDFQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type F)** 

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U-DFN2020-6<br>A1 A3 (Type F)<br>A Dim  Min  Max  Typ<br>A  0.57 0.63 0.60<br>Seating Plane A1  0.00 0.05 0.03<br>pL be ——— A3  -  -  0.15<br>b  0.25 0.35 0.30<br>D D  1.95 2.05 2.00<br>D2  0.85 1.05 0.95<br>e3 e4<br>D2a  0.33 0.43 0.38<br>E  1.95 2.05 2.00<br>E2  1.05 1.25 1.15<br>k2 E2a  0.65 0.75 0.70<br>D2a e 0.65 BSC<br>z2<br>e2  0.863 BSC<br>D2 e3  0.70 BSC<br>E E2a E2 e4  0.325 BSC<br>k  0.37 BSC<br>k1 k1  0.15 BSC<br>k e2 L k2  0.36 BSC<br>z1 L  0.225 0.325 0.275<br>z  0.20 BSC<br>z1  0.110 BSC<br>z2  0.20 BSC<br>e b All Dimensions in mm<br>z(4x) t aleae =<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type F)** 

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X3<br>C X Y<br>t a a |<br>Y3 Y2 Y1 Y4<br>X1<br>Pin1<br>fa:<br>X2<br>**----- End of picture text -----**<br>


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Value<br>Dimensions<br>(in mm)<br>C  0.650<br>X  0.400<br>X1  0.480<br>X2  0.950<br>X3  1.700<br>Y  0.425<br>Y1  0.800<br>Y2  1.150<br>Y3  1.450<br>Y4  2.300<br>**----- End of picture text -----**<br>


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DMP1009UFDFQ Datasheet number: DS41367  Rev. 2 - 2 

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**DMP1009UFDFQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP1009UFDFQ Datasheet number: DS41367  Rev. 2 - 2 

May 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP1009UFDFQ-7/power-mosfet-p-channel-12-v-11-a-8300-ohm-u)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp1009ufdfq-7/mosfet-p-ch-12v-11a-u-dfn2020/dp/3943687)
---

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