# Power MOSFET, P Channel, 8 V, 9.8 A, 4700 µohm, U-WLB1515, Surface Mount

![Product image](https://novapart.co/image/farnell:3405180RL/)

**URL**: https://novapart.co/products/DMP1008UCB9-7/power-mosfet-p-channel-8-v-98-a-4700-ohm-u-wlb1515
**SKU**: DMP1008UCB9-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2480
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 9Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 840mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | U-WLB1515 |
| Drain Source Voltage Vds | 8V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9.8A |
| Drain Source On State Resistance | 4700µohm |
| Gate Source Threshold Voltage Max | 600mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405180RL/)

**DMP1008UCB9** [ **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**VDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C**<br>-8V<br>5.7mΩ@VGS= -4.5V<br>-13.2A|||
|**VDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|-8V|5.7mΩ@VGS= -4.5V|-13.2A|



## **Features** 

- LD-MOS Technology with the Lowest Figure of Merit: 

- RDS(ON) = 5.7mΩ to Minimize On-State Losses 

- Qg = 8.2nC for Ultra-Fast Switching 

- VGS(TH) = -0.6V Typ. for a Low Turn-On Potential 

- CSP with Footprint 1.5mm  1.5mm 

- Height = 0.60mm for Low Profile 

## **Description** 

This 3[rd] generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. 

- ESD Protection of Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- DC-DC Converters 

- Battery Management 

- Load Switch 

## **Mechanical Data** 

- Case: U-WLB1515-9 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal: Finish - SnAgCu. Solderable per MIL-STD-202 Method 208 

- UBM Size: 245µm 

   - Terminal Connections: See Diagram Below 

- 

- Weight: 0.0018 grams (Approximate) 

|||||Weight: 0.0018 grams (Approximate)|Weight: 0.0018 grams (Approximate)|Weight: 0.0018 grams (Approximate)|Weight: 0.0018 grams (Approximate)|
|---|---|---|---|---|---|---|---|
|||U-WLB1515-9 (Type F)||||Gate||
|||e|--.<br>a<br>on<br>f<br>\<br>f<br>\<br>/<br>\<br>iG:tS?(S}<br>No<br>Nee<br>Ne||||Source|
||||Noe<br>NLL|Saeed||||
|ec<br>-<br>on<br>ESD PROTECTED|||ons<br>oot<br>{dD} (D}|ont<br> {od}||||
||||Top-View|Top-View|||Drain|
|||Pin Configuration||||Equivalent Circuit||
|**Information** (Note 4)||||||||
|||||||||
|**Part Number**|||**Case**||||**Packaging**|
|DMP1008UCB9-7||U-WLB1515-9 (TypeF)||||3,000/Tape &Reel||



## **Ordering Information** (Note 4) 

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

Notes: 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

U-WLB1515-9 (Type F) 

|||||||||YY = Product Type Marking Code|YY = Product Type Marking Code||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||YY|YY||YM = Date Code Marking|||||
||||||YM||YM|Y or Y = Year (ex: G = 2019)<br>M or M = Month (ex: 9 = September)|||||
|Date CodeKey|||||||||||||
||**Year**|**2019**|**2020**|**2021**|**2022**||**2023**|**2024**<br>**2025**<br>**2026**|**2027**|**2028**|**2029**|**2030**|
||**Code**|G|H|I|J||K|L<br>M<br>N|O|P|R|S|
||||||||||||||
||**Month**|**Jan**|**Feb**|**Mar**|**Apr**||**May**|**Jun**<br>**Jul**<br>**Aug**|**Sep**|**Oct**|**Nov**|**Dec**|
||**Code**|1|2|3|4||5|6<br>7<br>8|9|O|N|D|



DMP1008UCB9 Document number: DS39335  Rev. 5 - 2 

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**DMP1008UCB9** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-8|V|
|Gate-Source Voltage|||VGSS|-6|V|
|Continuous Drain Current (Note 5) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-9.8<br>-7.8|A|
|Continuous Drain Current (Note 6) VGS= -4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-13.2<br>-10.5|A|
|Pulsed Drain Current(Pulse Duration 10μs,DutyCycle ≤1%)|||IDM|-80|A|
|Continuous Source Pin Current(Note 6)|||IS|-1.8|A|
|Pulsed Source Pin Current(Pulse Duration 10µs,DutyCycle ≤1%)|||ISM|-80|A|
|Continuous Gate Current|||IG|-0.8|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|0.84|W|
|Total Power Dissipation(Note 6)|PD|1.53|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|151.4|°C/W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|82|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~eeeeee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~<br>~~ee~~|-8<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current               @TC= +25°C<br>~~ee~~|= +25°C<br>IDSS<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|-1<br>~~ee~~|μA<br>~~ee~~|VDS= -6.4V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|-100<br>~~ee~~|nA<br>~~ee~~|VGS= -6.0V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~ee ee ee~~|||||||
|Gate Threshold Voltage|VGS(TH)|-0.4|-0.6|-1.1|V|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~SS~~|RDS(ON)<br>~~SS~~|—<br>~~SS~~|4.7<br>~~SS~~|5.7<br>~~SS~~|mΩ<br>~~SS~~|VGS= -4.5V,ID= -2A<br>~~SS~~|
||||6.3<br>~~SS~~|8.2<br>~~SS~~||VGS= -3.0V,ID= -2A<br>~~SS~~|
||||6.8<br>~~SS~~|9.1<br>~~SS~~||VGS= -2.5V,ID= -2A<br>~~SS~~|
|Diode Forward Voltage(Note 6)<br>~~SS~~|VSD<br>~~SS~~|—<br>~~SS~~|-0.63<br>~~SS~~|-1<br>~~SS~~|V<br>~~SS~~|VGS= 0V,IS= -2A<br>~~SS~~|
|Reverse RecoveryCharge<br>~~ooo~~|QRR<br>~~ooo~~|—<br>~~ooo~~|9.2<br>~~ooo~~|—<br>~~ooo~~|nC<br>~~ooo~~|VDD= -5V, IF= -2A,<br>di/dt = 200A/μs<br>~~ooo~~|
|Reverse RecoveryTime<br>~~ooo~~|tRR<br>~~ooo~~|—<br>~~ooo~~|25<br>~~ooo~~|—<br>~~ooo~~|ns<br>~~ooo~~||
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|900<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= -4V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|730<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|158<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Series Gate Resistance<br>~~ee~~|RG<br>~~ee~~|—<br>~~ee~~|21.4<br>~~ee~~|—<br>~~ee~~|Ω<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~|
|Total Gate Charge|Qg|—|8.2|—|nC|VGS= -4.5V, VDS= -4V,<br>ID= -2A|
|Gate-Source Charge|Qgs|—|0.9|—|nC||
|Gate-Drain Charge|Qgd|—|1.0|—|nC||
|Turn-On DelayTime|tD(ON)|—|20.0|—|ns|VDD= -4V, VGS= -4.5V,<br>IDS= -2A, RG= 10Ω|
|Turn-On Rise Time|tR|—|5.8|—|ns||
|Turn-Off DelayTime|tD(OFF)|—|99.6|—|ns||
|Turn-Off Fall Time|tF|—|36.4|—|ns||



- Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 

   6. Device mounted on FR-4 material with 1-inch[2 ] (6.45cm[2] ), 2oz (0.071mm thick) Cu. 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

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30.0 20<br>VGS = -1.5V VDS = -5V<br>25.0 VGS = -2.0V 16<br>| e VGS = -2.5V r<br>20.0 VGS = -3.0V<br>12<br>VGS = -4.0V<br>15.0 b VGS = -4.5V o<br>8<br>10.0 VGS = -1.2V<br>Po ff<br>4 TJ = 150℃ TJ = 85℃<br>5.0<br>VGS = -1.0V TJ = 125℃ TJ = 25℃<br>TJ = -55℃<br>0.0 |po ——— 0 Sf Z/<br>0 0.5 1 1.5 2 2.5 3 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.008 0.06<br>VGS = -2.5V 0.05<br>0.007<br>0.04<br>VGS = -3.0V<br>0.006 0.03<br>0.02 ID = -2.0A<br>0.005 VGS = -4.5V<br>0.01<br>0.004 0<br>0 5 10 15 20 0 1 2 3 4 5 6<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.008 1.5<br>VGS = -4.5V<br>1.4<br>TJ = 150℃ pi tT tT Tt |<br>0.007 VGS = -2.5V, ID = -2.0A<br>TJ = 125℃ 1.3 pi td} VGS = -3.0V, ID = -2.0A<br>0.006 1.2 en<br>TJ = 85℃<br>1.1<br>0.005 TJ = 25℃ 1 VGS = -4.5V, ID = -2.0A<br>0.9<br>0.004 TJ = -55℃ am en<br>0.8<br>A“<br>0.003 = 0.7 e> ae<br>pi tt TT | |<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with Junction<br>and Junction Temperature Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.01 0.9<br>0.009 VGS = -2.5V, ID = -2.0A 0.8<br>[| = Ean<br>0.008 VGS = -3.0V, ID = -2.0A 0.7<br>“oe WO ID = -1mA<br>0.007 0.6<br>DS T a!<br>0.006 0.5<br>0-4 — ™<br>ID = -250μA<br>0.005 VGS = -4.5V, ID = -2.0A 0.4<br>0.004 ee 0.3 P e<br>a Pf ty tT NS<br>0.003 Pt LEE LE 0.2 PT ETT ELIS<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction   Figure 8. Gate Threshold Variation vs. Junction<br>Temperature Temperature<br>20 4.5<br>VGS = 0V<br>4 TTT TLL IZ<br>3.5<br>15 Seen<br>3<br>2.5<br>10 ee|| aaneen Aone<br>2<br>Ht| 1.5 na pn 4G4neee<br>5 TJ = 85 [o] C 1 VDS = -4V, ID = -2A<br>TJ = 150 [o] C<br>Ro TJ = 25 [o] C 0.5<br>TJ = 125 [o] C TJ = -55 [o] C<br>0 Dp yy 0 i7OCCLELELE-<br>0 0.3 0.6 0.9 1.2 0 1 2 3 4 5 6 7 8 9<br>VSD, SOURCE-DRAIN VOLTAGE (V) Qg (nC)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Gate Charge<br>1000<br>R<br>DS(ON)<br>Limited<br>PW = 1ms<br>100 PW = 100µs<br>PW = 10ms<br>mm Sc<br>10<br>1 PW = 100ms<br>TS N<br>TJ(Max) = 150 ℃<br>TC = 25 ℃ PW = 1s<br>0.1 Single Pulse<br>DUT on 1*MRP  PW = 10s<br>Board DC<br>0.01 VGS = -4.5V a a |ll<br>0.01 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br> (V)<br>GS<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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500<br>Single Pulse<br>RθJA = 151℃/W<br>400 RθJA(t) = RθJA * r(t)<br>300 N<br>200<br>100 \<br>0 NUL!<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 12. Single Pulse Maximum Power Dissipation<br>1<br>D=0.7<br>SOK SET SSSa See ee eee ree oo ae ee ea<br>D=0.5<br>FM CCETHNI THM gae NCI THM<br>A IE<br>D=0.3<br>D=0.9<br>WH,<br>0.1 TA TT.TT AT TTA TAT TTT<br>ER D=0.1 E eeT A<br>D=0.05<br>mene maar cm a a<br>A<br>D=0.02<br>Sea TVUMNOV ATH MATT] RCT ROT] aA ee A RTI<br>0.01 c UIoOgeT A A A<br>ECE D=0.01 Eee<br>D=0.005<br>a EZAA A RθJA(t) = r(t) * RθJA all<br>RθJA = 151℃/W<br>D=Single Pulse Duty Cycle, D = t1 / t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-WLB1515-9 (Type F)** 

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D<br>9x-Ø  b<br>3 2 1<br>Pin #1  ID<br>U-WLB1515-9<br>A (Type F)<br>Dim  Min  Max  Typ<br>e A  --  0.60 --<br>B A2  0.31  0.36 0.335<br>E<br>b  0.220 0.320 0.270<br>e D  1.48 1.53 1.505<br>C E  1.48  1.53  1.505<br>e  --  --  0.50<br>All Dimensions in mm<br>e e<br>Top View Bottom View<br>A2<br>A<br>we SEATING PLANE l<br>Side View<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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Please see http://www.diodes.com/package-outlines.html for the latest version.<br>U-WLB1515-9 (Type F)<br>D<br>Value<br>Dimensions<br>(in mm)<br>C1 C  0.50<br>C1  1.00<br>C<br>peye C2  1.00<br>D  0.25<br>C<br>C2<br>393<br>DMP1008UCB9 6 of 7<br>Document number: DS39335  Rev. 5 - 2   www.diodes.com<br>**----- End of picture text -----**<br>


December 2019 © Diodes Incorporated 

**DMP1008UCB9** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP1008UCB9 Document number: DS39335  Rev. 5 - 2 

December 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP1008UCB9-7/power-mosfet-p-channel-8-v-98-a-4700-ohm-u-wlb1515)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp1008ucb9-7/mosfet-p-ch-8v-9-8a-150deg-c-0/dp/3405180RL)
---

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