# Power MOSFET, N Channel, 60 V, 25 A, 0.03 ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/DMNH6042SK3Q-13/power-mosfet-n-channel-60-v-25-a-003-ohm-to-252
**SKU**: DMNH6042SK3Q-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2700
**Stock**: 1000+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 25A |
| Drain Source On State Resistance | 0.03ohm |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3943686/)
**Green** ~~@~~
**DMNH6042SK3Q** CF
## **60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**BVDSS**|**RDS(ON) Max**|**ID Max**
**TC = +25°C**||
|---|---|---|---|
|60V|50mΩ@VGS= 10V|25A||
||65mΩ@VGS= 4.5V|22A||
## **Features**
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
- Low On-Resistance
## **Description and Applications**
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported up by a PPAP and is ideal for use in:
- Low Input Capacitance
- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
- **PPAP Capable (Note 4)**
- Driving Solenoids
- Driving Relays
- Power Management Functions
## **Mechanical Data**
- Case: TO252 (DPAK)
- Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
-
- Weight: 0.315 grams (Approximate)
Top View
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Pin Out Top View
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Equivalent Circuit
## **Ordering Information** (Note 5)
|**Part Number**|**Case**|**Packaging**|
|---|---|---|
|DMNH6042SK3Q-13|TO252(DPAK)|2,500/Tape & Reel|
- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
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H6042S
YYWW
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= Manufacturer’s Marking H6042S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53)
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**DMNH6042SK3Q**
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 8) VGS= 10V|Steady
State|TC= +25°C
TC= +70°C|ID|25
17|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)|||IDM|40|A|
|Maximum Continuous BodyDiode Forward Current(Note 8)|||IS|25|A|
|Avalanche Current(Note 9)L = 10mH|||IAS|3.5|A|
|Avalanche Energy (Note 9)L = 10mH|||EAS|65|mJ|
## **Thermal Characteristics**
|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 6)||PD|2|W|
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|73|°C/W|
||t<10s||36||
|Total Power Dissipation(Note 7)||PD|3.5|W|
|Thermal Resistance, Junction to Ambient (Note 7)|SteadyState|RθJA|43|°C/W|
||t<10s||21||
|Thermal Resistance,Junction to Case(Note 8)||RθJC|3.2||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|
**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**
~~ee~~|**Symbol**
~~ee~~|**Min**
~~ee~~|**Typ **
~~ee~~|**Max**
~~ee~~|**Unit**
~~ee~~|**Test Condition**
~~ee~~|
|**OFF CHARACTERISTICS**(Note 10)
~~ee~~|||||||
|Drain-Source Breakdown Voltage
~~ee~~|BVDSS
~~ee~~|60
~~ee~~|—
~~ee~~|—
~~ee~~|V
~~ee~~|VGS= 0V,ID= 250μA
~~ee~~|
|Zero Gate Voltage Drain Current TJ= +25°C
~~ee~~|IDSS
~~ee~~|—
~~ee~~|—
~~ee~~|1
~~ee~~|µA
~~ee~~|VDS= 60V,VGS= 0V
~~ee~~|
|Gate-Source Leakage
~~ee~~|IGSS
~~ee~~|—
~~ee~~|—
~~ee~~|±100
~~ee~~|nA
~~ee~~|VGS= ±20V,VDS= 0V
~~ee~~|
|**ON CHARACTERISTICS**(Note 10)
~~GO~~
~~QO(~~|||||||
|Gate Threshold Voltage
~~QO~~|VGS(TH)
~~QO~~|1.0
~~QO~~
~~GO~~|—
~~QO~~
~~GO~~|3.0
~~QO~~
~~QO~~|V
~~QO~~
~~QO~~|VDS= VGS,ID= 250μA
~~QO~~
~~(~~|
|Static Drain-Source On-Resistance
~~a~~|RDS(ON)
~~a~~
~~ef~~|—
~~GO~~
~~a~~|30
~~GO~~
~~a~~|50
~~QO~~
~~a~~|mΩ
~~QO ~~
~~a~~|VGS= 10V,ID= 6A
~~(~~
~~a~~|
|||—
~~a~~
~~efff~~|45
~~a~~
~~ff~~|65
~~a~~
~~ff~~||VGS= 4.5V,ID= 6A
~~a~~|
|Diode Forward Voltage
~~Cf~~|VSD
~~Cf~~
~~ef~~|—
~~Cf~~
~~efff~~|0.8
~~Cf~~
~~ff~~|1.2
~~Cf~~
~~ff~~|V
~~Cf~~|VGS= 0V,IS= 2.6A
~~Cf~~|
|**DYNAMIC CHARACTERISTICS**(Note 11)
~~ef ff~~|||||||
|Input Capacitance
~~ee~~|Ciss
~~ee~~|—
~~ee~~|584
~~ee~~|—
~~ee~~|pF
~~ee~~|VDS= 25V, VGS= 0V,
f = 1.0MHz
~~ee~~|
|Output Capacitance
~~ee~~|Coss
~~ee~~|—
~~ee~~|83
~~ee~~|—
~~ee~~|pF
~~ee~~||
|Reverse Transfer Capacitance
~~ee~~|Crss
~~ee~~|—
~~ee~~|24
~~ee~~|—
~~ee~~|pF
~~ee~~||
|Gate Resistance
~~———~~|Rg|—|3.8|—
~~ee~~|Ω
~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz
~~eee~~|
|Total Gate Charge(VGS= 4.5V)
~~———~~|Qg|—|4.2|—
~~ee~~|nC
~~ee~~|VDS= 44V, ID= 5.2A
~~eee~~
~~ee~~|
|Total Gate Charge(VGS= 10V)
~~———~~|Qg|—|8.8|—
~~ee~~|nC
~~ee~~||
|Gate-Source Charge
~~———~~|Qgs|—|1.8|—
~~ee~~|nC
~~ee~~||
|Gate-Drain Charge
~~———~~
~~———~~|Qgd|—|1.8|—
~~ee~~
~~ee~~|nC
~~ee~~
~~ee~~||
|Turn-On DelayTime
~~———~~
~~———~~|tD(ON)|—|3.4|—
~~ee~~
~~ee~~|ns
~~ee~~
~~ee~~|VGS= 10V, VDS= 30V,
RG= 6Ω, ID= 1A
~~eee~~
~~ee~~|
|Turn-On Rise Time
~~———~~
~~———~~|tR|—|1.9|—
~~ee~~
~~ee~~|ns
~~ee~~
~~ee~~||
|Turn-Off DelayTime
~~———~~|tD(OFF)|—|10.1|—
~~ee~~|ns
~~ee~~||
|Turn-Off Fall Time
~~———~~|tF|—|4.5|—
~~ee~~|ns
~~ee~~||
|Body Diode Reverse Recovery Time
~~———~~
~~ee~~|tRR
~~ee~~|—
~~ee~~|12.9
~~ee~~|—
~~ee~~
~~ee~~|ns
~~ee~~
~~ee~~|IF= 2.6A, di/dt = 100A/μs
~~ee~~
~~ee~~|
|Body Diode Reverse Recovery Charge
~~ee~~|QRR
~~ee~~|—
~~ee~~|5.4
~~ee~~|—
~~ee~~|nC
~~ee~~||
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
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DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2
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**DMNH6042SK3Q**
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30.0 30
VGS = 8.0V VGS = 5.0V VDS = 5V
25.0 fi 25 e e)
20.0 VGS = 4.5V 20
VGS = 10V
15.0 fe , a 15 eee ae
VGS = 4.0V
10.0 10 TJ = 175 [o] C
ff {
TJ = 150 [o] C
5.0 | Z VGS = 3.3V 5 TTJJ = 85 = 125 [o] C [o] C Sf TJT = -55J = 25 [o] C [o] C
0.0 0
0 1 2 3 4 5 1 2 3 4 5 6
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic
0.08 0.1
0.07 0.09 ID = 5.1A
PTT EE Ey 0.08 [e e
0.06
0.05 H VGS = 4.5V E RE 0.07
0.06
0.04 Soe pe CPP rere
0.05
0.03 paeeee ee SEAT
VGS = 10V 0.04
0.02 aaeeaan LC
0.03
0.01 ceecteeeesa 0.02 E ID = 4.4A EE
0 0.01
0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs Drain Current and Figure 4. Typical Transfer Characteristic
Gate Voltage
0.08 2.4
VGS = 10V TJ = 175 [o] C 2.2
0.07 a —- 2 CTT VGS = 10V, ID = 5.1A
0.06 ee 1.8 HEEL
0.05 o TJ = 125 [o] C T TJ = 150 [o] C 1.6 Ere
1.4
0.04 a TJ = 85 [o] C a
1.2
To a TN
0.03 TJ = 25 [o] C 1 VGS = 4.5V, ID = 4.4A
S S 0.8 ea
0.02 T er
a —_—| 0.6 COEZar
TJ = -55 [o] C
0.01 eee 0.4 PEE
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )
Figure 5. Typical On-Resistance vs Drain Current and Figure 6. On-Resistance Variation with Temperature
Temperature
, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID
, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)
DS(ON) DS(ON)
R R
(NORMALIZED)
, DRAIN-SOURCE ON-RESISTANCE
, DRAIN-SOURCE ON-RESISTANCE (Ω)
DS(ON)
R
DS(ON)
R
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DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2
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0.1
0.09 TTT ELLLLL
0.08 TT Eee
0.07 VGS = 4.5V, ID = 4.4A
0.06
0.05 SH Pee I ]
0.04 D> Z
0.03 ap-4en
VGS = 10V, ID = 5.1A
0.02 art| rT ~
TEP ee
0.01
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( ℃ )
Figure 7. On-Resistance Variation with Temperature
30
VGS = 0V
25 —
20 eee |
ey
TA = 175 [o] C
15 TA = 150 [o] C HH]
TA = 125 [o] C
10 TA = 85 [o] C tif |
Hl
TA = 25 [o] C
, /
5
TA = -55 [o] C f/f
0 LL) )
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
, DRAIN-SOURCE ON-RESISTANCE (Ω)
DS(ON)
R
, SOURCE CURRENT (A)
IS
**----- End of picture text -----**
**==> picture [222 x 212] intentionally omitted <==**
**----- Start of picture text -----**
10
8
6
4
VDS = 44V, ID = 5.2A
2
0
0 2 4 6 8 10
Qg (nC)
Figure 11. Gate Charge
(V)
GS
V
**----- End of picture text -----**
**==> picture [237 x 664] intentionally omitted <==**
**----- Start of picture text -----**
2.82.6 CTL LLLLLL
2.4 Ne
2.2 ID = 1mA
2
| 1.8 RP REES HE
1.6 ID = 250µA NA
1.4 Saaaee NS
1.2 r T N NN
1 PEE
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( ℃ )
Figure 8. Gate Threshold Variation vs Junction
Temperature
1000
f = 1MHz
a Ciss
SeeSeeneanae
100 Coss
BSSeRRRRRaae
A
AES RE S
Crss
pM MSS EAT
10 TE L LL ETEL
0 5 10 15 20 25 30 35 40 45 50 55 60
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
RDS(ON) PW = 10µs
Limited
pe PRET
10
ANN SDN
PW = 1s
PW = 100ms
PW = 10ms
1
TJ(Max) = 175 ℃ PW = 1ms
TC = 25 ℃ PW = 100µs
Single Pulse
DUT on Infinite Heatsink
VGS = 10V
iit
0.1
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
, GATE THRESHOLD VOLTAGE (V)
GS(TH)
V
, JUNCTION CAPACITANCE (pF)
T
C
, DRAIN CURRENT (A)
ID
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**DMNH6042SK3Q**
**==> picture [411 x 288] intentionally omitted <==**
**----- Start of picture text -----**
1
D=0.9
D=0.5 D=0.7
egSemanal meer aeeeraac eestia ieeati
ames at A HCI
D=0.3
LITPITTETI EE PT
0.1 eA
> Sze ee eta ce se
D=0.1 0 7/8 0
Sunapee LAE TIM EINE LL
Pe EEE
D=0.05
ee me
7 Ace ee
P AAAAI IE ETE ETI
0.01 A I
TS ELM EERIE ELT LEE ETT
D=0.02
SE EEESiete pede)EPPS seF EHPetet
RemOSTill D=0.01 aCEIee TOOTmil
RθJC (t) = r(t) * RθJC
Pi, D=0.005 HITT RθJC = 3.2 ℃ /W Ml
Duty Cycle, D = t1/t2
D=Single Pulse
0.001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE
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DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2
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**DMNH6042SK3Q**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**==> picture [58 x 9] intentionally omitted <==**
**----- Start of picture text -----**
TO252 (DPAK)
**----- End of picture text -----**
**==> picture [423 x 257] intentionally omitted <==**
**----- Start of picture text -----**
E
A
b3
7°± 1°
c
L3
TO252 (DPAK)
Dim Min Max Typ
A 2.19 2.39 2.29
D A2 A1 0.00 0.13 0.08
L4 H A2 0.97 1.17 1.07
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c 0.45 0.58 0.531
D 6.00 6.20 6.10
e b(3x) D1 5.21 - -
e - - 2.286
b2(2x)
E 6.45 6.70 6.58
0.508 E1 4.32 - -
Gauge Plane
H 9.40 10.41 9.91
L 1.40 1.78 1.59
E1 D1 Seating Plane L3 0.88 1.27 1.08
L L4 0.64 1.02 0.83
A1
a 0° 10° -
2.74REF
ms All Dimensions in mm
Cy Ee
a
**----- End of picture text -----**
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
## **TO252 (DPAK)**
**==> picture [133 x 167] intentionally omitted <==**
**----- Start of picture text -----**
aa X1 __
Y1
Y2
C
Y
onoO ¢
X
**----- End of picture text -----**
|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|4.572|
|**X**|1.060|
|**X1**|5.632|
|**Y**|2.600|
|**Y1**|5.700|
|**Y2**|10.700|
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DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2
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**DMNH6042SK3Q**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
**www.diodes.com**
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## Links
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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmnh6042sk3q-13/mosfet-n-ch-60v-25a-to-252/dp/3943686)
---
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