# Power MOSFET, N Channel, 60 V, 95 A, 4600 µohm, PowerDI5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3589197/)

**URL**: https://novapart.co/products/DMNH6009SPS-13/power-mosfet-n-channel-60-v-95-a-4600-ohm
**SKU**: DMNH6009SPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4220
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.6W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI5060 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 95A |
| Drain Source On State Resistance | 4600µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3589197/)

**Green** ~~a)~~ 

**DMNH6009SPS** Cs” **60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

## ~~O~~ **Product Summary** ~~e~~ **Features** 

|**Product Summaryy**<br>~~O~~|**Product Summaryy**<br>~~O~~|**Product Summaryy**<br>~~O~~|
|---|---|---|
|~~O~~|||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|60V|7.3mΩ@VGS= 10V|95A|
||15mΩ@VGS= 4.5V|67A|



 Rated to +175°C—Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switch (UIS) Test in Production 

- Low RDS(ON)—Minimizes Power Losses 

- Low Qg—Minimizes Switching Losses 

- <1.1mm Package Profile—Ideal for Thin Applications 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

Case: PowerDI[®] 5060-8 

   - 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections: See Diagram Below 

- Power Management Functions 

- DC-DC Converters 

- Backlighting 

- Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

Site 1: 

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PowerDI5060-8<br>D S D<br>Pin1  S D<br>S D<br>G<br>G D<br>oY @<br>S Top View<br>Top View  Bottom View  Internal Schematic  Pin Configuration<br>Site 2:<br>PowerDI5060-8 (SWP) (Type UX)  D<br>S D<br>Pin1  S D<br>G<br>S D<br>G D<br>ee © S<br>Top View  Bottom View  Internal Schematic  Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


_PowerDI is a registered trademark of Diodes Incorporated._ 

1 of 9 **www.diodes.com** 

DMNH6009SPS Document number: DS41482 Rev. 3 - 2 

March 2020 © Diodes Incorporated 

**DMNH6009SPS** 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMNH6009SPS-13|PowerDI5060-8/PowerDI5060-8 (SWP) (Type UX)|2500/Tape &Reel|



Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and     Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

ot = Manufacturer’s Marking NH6009SS = Product Type Marking Code YYWW = Date Code Marking ~~=~~ YY or YY= Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= 10V|TC= +25°C<br>TC= +100°C|ID|95<br>67|A|
|Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)||IDM|380|A|
|Maximum Continuous Body Diode Forward Current  (Note 7)||IS|95|A|
|Pulsed Source Current (380µs Pulse, DutyCycle = 1%)||ISM|380|A|
|Avalanche Current, L = 0.1mH (Note 8)||IAS|56|A|
|Avalanche Energy, L = 0.1mH (Note 8)||EAS|226|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|1.6|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|95|°C/W|
|Total Power Dissipation(Note 6)||PD|3.3|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|46|°C/W|
|Thermal Resistance,Junction to Case(Note 7)||RθJC|1.5||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +175|°C|



- Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 

   6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

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**DMNH6009SPS** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**(Note 9)<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|60<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 1mA<br>~~ee~~|
|Zero Gate Voltage Drain Current,TJ= +25°C<br>~~es~~|IDSS<br>~~es~~|—<br>~~es~~|—<br>~~es~~|1<br>~~es~~|µA<br>~~es~~|VDS= 48V,VGS= 0V<br>~~es~~|
|Gate-Source Leakage<br>~~es~~|IGSS<br>~~es~~|—<br>~~es~~|—<br>~~es~~|±100<br>~~es~~|nA<br>~~es~~|VGS= ±20V,VDS= 0V<br>~~es~~|
|**ON CHARACTERISTICS**(Note 9)<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1<br>~~ee~~|2<br>~~ee~~|3<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|4.6<br>~~ee~~|7.3<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 50A<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|7.1<br>~~ee~~|15<br>~~ee~~|mΩ<br>~~ee~~|VGS= 4.5V,ID= 25A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.7<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 1.7A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS**(Note 10)|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|1882<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= 30V, VGS= 0V,<br>f = 1MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|374<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|111<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Gate Resistance<br>~~————~~|Rg|—|2.1|—<br>~~ee~~|Ω<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~eee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~————~~|Qg|—|18.5|—<br>~~ee~~|nC<br>~~ee~~|VDS= 30V, ID= 25A<br>~~eee~~<br>~~en~~|
|Total Gate Charge(VGS= 10V)<br>~~————~~|Qg|—|37.3|—<br>~~ee~~|nC<br>~~ee~~||
|Gate-Source Charge<br>~~————~~|Qgs|—|5.0|—<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~————~~<br>~~—————~~|Qgd|—|11.2|—<br>~~ee~~<br>~~en~~|nC<br>~~ee~~<br>~~en~~||
|Turn-On DelayTime<br>~~————~~<br>~~—————~~|tD(ON)|—|5.7|—<br>~~ee~~<br>~~en~~|ns<br>~~ee~~<br>~~en~~|VGS= 10V, VDS= 30V,<br>Rg= 3Ω, ID= 25A<br>~~eee~~<br>~~en~~|
|Turn-On Rise Time<br>~~————~~<br>~~—————~~|tR|—|7.5|—<br>~~ee~~<br>~~en~~|ns<br>~~ee~~<br>~~en~~||
|Turn-Off DelayTime<br>~~—————~~|tD(OFF)<br>~~a~~|—|16.9<br>~~ee~~|—<br>~~en~~<br>~~ee~~|ns<br>~~en~~<br>~~ee~~||
|Turn-Off Fall Time<br>~~—————~~|tF<br>~~a~~|—|6.3<br>~~ee~~|—<br>~~en~~<br>~~ee~~|ns<br>~~en~~<br>~~ee~~||
|BodyDiode Reverse RecoveryTime<br>~~—————~~<br>~~————~~|tRR<br>~~————~~<br>~~a~~|—<br>~~————~~|32<br>~~————~~<br>~~ee~~|—<br>~~en~~<br>~~————~~<br>~~ee~~|ns<br>~~en~~<br>~~————~~<br>~~ee~~|IF= 25A, di/dt = 100A/μs<br>~~en~~<br>~~————~~|
|BodyDiode Reverse RecoveryCharge<br>~~————~~|QRR<br>~~————~~<br>~~a~~|—<br>~~————~~|30<br>~~————~~<br>~~ee~~|—<br>~~————~~<br>~~ee~~|nC<br>~~————~~<br>~~ee~~||



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50 30<br>VGS = 4V VDS = 5.0V<br>45<br>ne er aa<br>40 RS V GS  = 4.5V TT 25 |<br>VGS = 5V<br>35<br>VGS = 10V 20<br>30 feo<br>25 | oe VGS = 3.5V 15 eee TA = 125°C  | T A  = 85°C<br>20<br>TA = 25°C<br>fo 10 eee |<br>15 (ane TA = 150°C aff]<br>10 TA = -55°C<br>5 T A  = 175°C<br>5 /aceee VGS = 3V e ny 20<br>0 a_i 0 BYE<br>0 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>20 50<br>18 45<br>16 40<br>14 35<br>12 VGS = 6V 30 I D  = 50A<br>10 SEE 25 fe<br>8 CEE EE ER 20 CHEE EEE<br>6 15 I D  = 25A<br>4 ae VGS = 10V 10 ce<br>2 5<br>0 HCEEEECLEPsecceeeree i s 0 CELTCoESEEEE<br>0 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>15 VGS = 10V 2.6<br>2.4<br>12 TA = 175°C 2.2 VI GS D = 14A = 10V<br>TA  = 150°C 2<br>9 T A  = 125°C 1.8<br>SS {ttt ttre<br>TA = 85°C 1.6<br>SSS 1.4 aes<br>6<br>TA = 25°C 1.2 VGS  = 6V<br>ID = 12A<br>TA = -55°C 1<br>3 Er aaee4nem<br>0.8<br>0.6<br>0<br>ttt Lt art<br>0 5 10 15 20 25 30 0.4 Ff | | ff ff ft<br>-50 -25 0 25 50 75 100 125 150 175<br>Figure 5 Typical On-Resistance vs. ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>)   )<br> <br>, DRAIN-SOURCE ON-RESISTANCE (m , DRAIN-SOURCE ON-RESISTANCE (m<br>DS(ON) DS(ON)<br>R R<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (m<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br> I<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>D<br>, DRAIN CURRENT (A)<br> I<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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0.02<br>0.015<br>VGS = 6V SS<br>ID = 12A p<br>0.01<br>ar<br>a VGS ae  = 10V<br>ID = 14A<br>aa<br>0.005<br>aaa<br>Pt<br>0 Ty |<br>-50 -25 0 25 50 75 100 125 150 175<br>T , JUNCTION TEMPERATURE (J C)<br>Figure 7 On-Resistance Variation with Temperature<br>3025 HA<br>TA = 125°C<br>eee<br>20<br>TA = 150°C TA = 85°C<br>15 TL<br>TA = 175°C TA  = 25°C<br>a<br>10 ap:<br>TA = -55°C<br>Ue<br>5<br>0 Bs al<br>0 0.3 0.6 0.9 1.2<br>V SD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current<br>10<br>/<br>8<br>J VDS = 30V<br>6<br>ID = 25A<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35 40<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 11 Gate Charge<br>, GATE SOURCE VOLTAGE (V)<br>GS<br>V<br>, SOURCE CURRENT (A)<br>IS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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3 ee<br>2.8 ee<br>2.6<br>2.4<br>2.2<br>ee<br>2 se<br>SEE<br>ID = 1mA<br>1.8 I D  = 250µA<br>1.6<br>Coss<br>1.4<br>ee<br>1.2<br>ee<br>1 ee<br>0.8 FEE Peres<br>0.6<br>0.4 ee FEErereeees<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (C)<br>Figure 8 Gate Threshold Variation vs. Ambient TemperatureJunction Temperature (°C)<br>GS(th)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>


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10000 f=1MHz<br>ee<br>Ciss<br>1000 ———Ne<br>ae<br>Coss<br>100 SS<br>Ee<br>Crss<br>===> >><br>10 a es<br>0 10 20 30 40 50 60<br>VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>1000<br>a<br>OeOO<br>100<br>IT NTUTIN, IN TTL<br>Pt Pe ENT NNT<br>P W  = 1s<br>|| P W  = 100ms ZS AN<br>10 PW = 10ms<br>PW = 1ms<br>PW = 100µs<br>P W  = 10µs<br>FEE P a2 W = 1µs NNR<br>1<br>TJ(max) = 175°C<br>T C  = 25°C<br>VSingle Pulse GS  = 10V ee<br>DUT on Infinite Heatsink<br>0.1 CHC<br>0.1 1 10 100<br>-VDS DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>D<br>, DRAIN CURRENT (A)<br>-I<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

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1<br>oeSTEREO D = 0.9D = 0.7 eeee ee<br>a D = 0.5 TE)<br>a cee<br>pe D = 0.3 EE Et<br>PN FINN ee IEP PNET PT<br>LTeM<br>0.1 D = 0.1 eA eh sep pst Pe teed pis ais<br>TOTaa  aOOOS OOTIE8 0 METAL<br>D = 0.05<br>renee met meets eee ee eee0 eee<br>AN<br>sen D = 0.02<br>0.01 o> UM D = 0.01 Ee eT<br>KAS D = 0.005 eee et EEE<br>AT Tti<br>D = Single Pulse<br>Ey vine “CEERIPI PPT TPPTTT LTTE R θJC (t) = r(t) * R θJC IHl<br>RθJC = R  1.5JA ℃ (t) = r(t) * R /W  JA<br>Duty Cycle, D = t1 / t2 RDuty Cycle, D = t1/ t2JA  = 1.5°C/W<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMNH6009SPS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

Site1: 

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PowerDI5060-8<br>**----- End of picture text -----**<br>


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PowerDI5060-8<br>D Dim  Min  Max  Typ<br>D1 Detail A A  0.90 1.10 1.00<br>0 (4X) A1  0.00 0.05 —<br>b  0.33 0.51  0.41<br>c b2  0.200 0.350 0.273<br>A1 b3 0.40 0.80 0.60<br>c  0.230 0.330 0.277<br>E1 E<br>D  5.15 BSC<br>e D1  4.70 5.10 4.90<br>D2  3.70 4.10 3.90<br>ol 1 d USE 0 1 (4X) === DE 3 3.90 6.14.5 B30SC 4.10<br>E1  5.60 6.00 5.80<br>b (8X) e/2 E2  3.28 3.68 3.48<br>1 E3  3.99 4.39 4.19<br>L 22-06 ) | b2 (4X) == e 1.27 BSC<br>D3 K G 0.51  0.71  0.61<br>K  0.51  —  —<br>L  0.51  0.71  0.61<br>—) A E3 f E2 t Fh D2 b3 (4X) ——— L1  0.100 0.200 0.175<br>M<br>M  3.235 4.035 3.635<br>M1 M1  1.00 1.40 1.21<br>Detail A<br>Θ  10°  12°  11°<br>ane ====<br>G L1 Θ1  6°  8°  7°<br>4 ———— All Dimensions in mm<br>**----- End of picture text -----**<br>


Site2: 

**PowerDI5060-8 (SWP) (Type UX)** 

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D<br>PowerDI5060-8 (SWP)<br>D1 (Type UX)<br>Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>A1  0 0.05 --<br>b  0.30 0.50 0.41<br>E1 E A1 b2  0.20 0.35 0.25<br>b4  0.25REF<br>1.900 1.400 c Seating Plane c  0.230 0.330 0.277<br>e D  5.15 BSC<br>D1  4.70 5.10 4.90<br>D2  3.56 3.96 3.76<br>f 1 et} === D2a  3.78 4.18 3.98<br>Ø 1.000 Depth 0.07± 0.030 E  6.40 BSC<br>DETAIL A E1  5.60 6.00 5.80<br>b(8x) e/2 E2  3.46 3.86 3.66<br>1 E2a  4.195 4.595 4.395<br>roe SSS=<br>L e  1.27BSC<br>k  1.05 --  --<br>D2a k L  0.635 0.835 0.735<br>La 0.635 0.835 0.735<br>L1  0.200 0.400 0.300<br>A L1a  0.050REF<br>L4<br>E2 D2 L4  0.025 0.225 0.125<br>M M  3.205 4.005 3.605<br>DETAIL A θ  10°  12°  11°<br>θ1  6°  8°  7°<br>La Ret] SS ES All Dimensions in mm<br>eval b4(8x) ! L1 —<br>0(4x)<br>01(4x)<br>**----- End of picture text -----**<br>


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DMNH6009SPS Document number: DS41482 Rev. 3 - 2 

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**DMNH6009SPS** 

## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

Site1: 

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PowerDI5060-8<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>C  1.270<br>G  0.660.660660<br>G1  0.820.820820<br>X  0.610.610610<br>X1  4.100<br>X2  0.755<br>X3  4.420<br>X4  5.610<br>Y  1.270<br>Y1  0.600<br>Y2  1.020<br>Y3  0.295<br>Y4  1.825825<br>Y5  3.810.810810<br>Y6  0.180.180<br>Y7  6.610<br>**----- End of picture text -----**<br>


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X4<br>Y2 C  1.270<br>X3 G  0.660.660660<br>G1  0.820.820820<br>Y3 Y1 X  0.610.610610<br>X1<br>X2<br>X3<br>X2 X4<br>Y5<br>Y4 X1 Y<br>Y7 Y1<br>Y2<br>Y3<br>Y4  1.825825<br>a C G1 !<br>Y6 Y5  3.810.810810<br>Y6  0.180.180<br>Y7<br>Y(4x)<br>oon X G<br>Site2:<br>PowerDI5060-8 (SWP) (Type UX)<br>X2<br>Y1 Value<br>Dimensions<br>(in mm)<br>C  1.270<br>G  0.660<br>Y2<br>aan —— G1  0.820<br>Y3 X  0.610<br>X1  4.100<br>Lf == X2  4.420<br>G1 X1 Y  1.270<br>Y1  1.020<br>Y2  3.810<br>Y3 6.610<br>Y C X (8x)<br>Oo G i<br>**----- End of picture text -----**<br>


8 of 9 **www.diodes.com** 

DMNH6009SPS Document number: DS41482 Rev. 3 - 2 

March 2020 © Diodes Incorporated 

**DMNH6009SPS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

9 of 9 **www.diodes.com** 

DMNH6009SPS Document number: DS41482 Rev. 3 - 2 

March 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMNH6009SPS-13/power-mosfet-n-channel-60-v-95-a-4600-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmnh6009sps-13/mosfet-n-ch-60v-95a-powerdi5060/dp/3589197)
---

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