# Power MOSFET, N Channel, 40 V, 13 A, 0.0085 ohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:2709542/)

**URL**: https://novapart.co/products/DMNH4011SPS-13/power-mosfet-n-channel-40-v-13-a-00085-ohm-powerdi
**SKU**: DMNH4011SPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2280
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 1.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0085ohm |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 0.0085ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709542/)

**Green** @ 

**DMNH4011SPS** CT 

**40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI** 

## **Product Summary** 

|~~SO~~|~~SO~~|~~SO~~|
|---|---|---|
|~~SO~~|||
|**BVDSS**|**RDS(ON) max**|**ID **<br>**TC = +25°C**|
|40V|10mΩ@VGS= 10V|80A|



## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Features** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching  – ensures more reliable and robust end application 

- Thermally Efficient Package-Cooler Running Applications 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On State Losses 

- Low Input Capacitance 

- <1.1mm Package Profile – Ideal for Thin Applications 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Applications** 

- Engine Management Systems 

   - **Qualified to AEC-Q101 Standards for High Reliability** 

   - **An Automotive-Compliant Part is Available Under Separate Datasheet (DMNH4011SPSQ)** 

- Body Control Electronics 

- DCDC Converters 

## **Mechanical Data** 

- Case: PowerDI5060-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

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S D<br>Pin1<br>S D<br>S D<br>G D<br>Top View<br>Top View  Bottom View  Internal Schematic  Pin Configuration<br>g Information Information (Note 4)<br>Part Number Case Packaging<br>DMNH4011SPS-13  PowerDI5060-8  2,500 / Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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D D D D<br>; " /<br>NH4011SS<br>YY WW<br>S S S G<br>**----- End of picture text -----**<br>


oh = Manufacturer’s Marking 

NH4011SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) 

POWERDI is a registered trademark of Diodes Incorporated. DMNH4011SPS Document number: DS37401  Rev. 2 - 2 

1 of 7 **www.diodes.com** 

April 2016 © Diodes Incorporated 

**DMNH4011SPS** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|GOO|Characteristic|Symbol|Value|Units|
|OO|Drain-Source Voltage|VDSS|40|V|
|OO|Gate-Source Voltage|VGSS|±20|V|
|Continuous Drain Current  (VGS = 10V) (Note 6)|TTAA = +25 = +70C C|ID|10.8 13|A|
|Continuous Drain Current  (VGS = 10V) (Note 7)|TC = +25C|ID|80|A|
|TC = +100°C|57|
|Maximum Continuous Body Diode Forward Current (Note 7)|IS|80|A|
|a|(|Q|
|=)|Pulsed Drain Current (10s pulse, duty cycle = 1%)|IDM|A|
|GO|Avalanche Current, L = 1mH (Note 8)|IAS|<|A|
|a|Avalanche Energy, L = 1mH (Note 8)|EAS|mJ|

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## **Thermal Characteristics** 

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Units|
|a|
|Total Power Dissipation|TA = +25°C|PD|1.5|W|
|po|Note|5)|
|GG|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RJA|99|°C/W|
|Note)|Total Power Dissipation|TA = +25°C|PD|W|
|po|(|
|OQ|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RJA|°C/W|
|00|Total Power Dissipation (Note 7)|TC = +25°C|PD|W|
|QO|Thermal Resistance, Junction to Case (Note 7)|RJC|=|°C/W|
|QQ|Operating and Storage Temperature Range|TJ, TSTG|-55 to +175|°C|
|Electrical Characteristics|(@TA = +25°C, unless otherwise specified.) A = +25°C, unless otherwise specified.)  = +25°C, unless otherwise specified.)|
|GO|Characteristic|Symbol|Min|GO|Typ|Max|OD|Unit|(|Test Condition|
|Ce|OFF CHARACTERISTICS (Note 9)|
|GO|Drain-Source Breakdown Voltage|BVDSS|40|GO|—|—|V|VGS = 0V, ID = 250μA|
|GO|Zero Gate Voltage Drain Current|IDSS|—|GO|—|(OOO|1|μA|VDS = 40V, VGS = 0V|
|DG|Gate-Source Leakage|IGSS|—|—|GO|±100|nA|VGS = ±20V, VDS = 0V|
|Ce|ON CHARACTERISTICS (Note 9)|
|GO|Gate Threshold Voltage|VGS(TH)|2|—|(OOO|4|V|VDS = VGS, ID = 250μA|
|GG|Static Drain-Source On-Resistance|RDS(ON)|—|8.5|10|mΩ|VGS = 10V, ID = 20A|
|OO|
|DG|Diode Forward Voltage|VSD|—|0.9|DO|1.2|V|VGS = 0V, IS = 20A|
|Ce|DYNAMIC CHARACTERISTICS (Note 10)|
|I|Input Capacitance|Ciss|—|1405|—|
|a|Output Capacitance|Coss|—|247|—|pF|VDS = 20V, VGS = 0V, f = 1MHz|
|a|Reverse Transfer Capacitance|Crss|—|108|—|
|GO|Gate Resistance|Rg|—|2.2|—|Ω|VDS = 0V, VGS = 0V, f = 1MHz|
|Total Gate Charge|Qg|—|25.5|—|
|a|GO|
|a|Gate-Source Charge|Qgs|—|4.6|—|nC|VDS = 20V, VGS = 10V, ID = 50A|
|Gate-Drain Charge|Qgd|—|6.9|—|
|Turn-On Delay Time|tD(ON)|—|4.6|—|
|a|
|Turn-On Rise Time|tR|—|3.7|—|VDD = 20V, VGS = 10V,|
|a|ns|
|a|Turn-Off Delay Time|tD(OFF)|—|16|—|ID = 50A, RG = 3.5Ω|
|Turn-Off Fall Time|tF|—|5.1|—|
|esSO|Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge|QtRRRR|OG|——|22.1 13.4|——|nC ns|IF = 50A, di/dt = 100A/μs|

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## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) A = +25°C, unless otherwise specified.)  = +25°C, unless otherwise specified.) 

- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

   7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

POWERDI is a registered trademark of Diodes Incorporated. DMNH4011SPS Document number: DS37401  Rev. 2 - 2 

2 of 7 **www.diodes.com** 

April 2016 © Diodes Incorporated 

**DMNH4011SPS** 

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50.0  30<br>VGS = 4.5V VDS = 5V<br>25<br>40.0  VGS = 5.0V<br>VGS = 6.0V<br>20<br>30.0  VGS = 10.0V VGS = 4.0V<br>| es 15  |i<br>20.0<br>Yo 10 175 ℃<br>VGS = 3.5V 150 ℃ 85 ℃<br>10.0<br>5 125 ℃ 25 ℃<br>VGS = 3.0V -55 ℃<br>eZ,<br>0.0  0<br>0 0.5 1 1.5 2 2.5 3 1.5 2 2.5 3 3.5 4 4.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristic<br>10.00  20<br>9.50<br>9.00  TOs 17 fit) ID = 50A<br>VGS = 10.0V<br>8.50  ce e 14<br>ID = 20A<br>8.00<br>|| eee 11 \ aan<br>7.50  Zea \<br>7.00<br>8<br>HE LN<br>6.50<br>6.00  CEE EET 5 LLL EPP<br>5 10 15 20 25 30 35 40 45 50 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs Drain Current and  Figure 4 Typical Transfer Characteristic<br>Gate Voltage<br>0.02 2.2<br>0.018 VGS = 10V 175 ℃ 150 ℃ 2<br>0.016<br>1.8<br>0.014<br>1.6<br>0.012 125 ℃ VGS = 10V, ID = 50A<br>S S E 1.4 pe<br>0.01<br>85 ℃ 1.2<br>0.008 Seer maaE ee one ceo<br>1<br>0.006 25 ℃<br>e ee 0.8 Eee<br>0.004<br>-55 ℃<br>Se e 0.6 LLL<br>0.002<br>0 CEE EEE 0.4 AEE EE<br>0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5 Typical On-Resistance vs Drain Current  Figure 6 On-Resistance Variation with Temperature<br>and Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE  , DRAIN-SOURCE<br>RDS(ON)ON-RESISTANCE (mΩ) RDS(ON)ON-RESISTANCE (mΩ)<br>, DRAIN-SOURCE<br>,  DRAIN-SOURCE<br>DS(ON)<br>DS(ON)ON-RESISTANCE (Ω) R<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. DMNH4011SPS Document number: DS37401  Rev. 2 - 2 

3 of 7 **www.diodes.com** 

April 2016 © Diodes Incorporated 

**DMNH4011SPS** 

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0.02<br>0.018 a<br>0.016 Oe a<br>0.014 VGS = 10V, ID = 50A<br>0.012 SU<br>0.01 CCC Van<br>0.008 T ee<br>CCC ET<br>0.006<br>0.004 TerrPT LLLrrrLL<br>0.002 COTE Eee<br>EEE<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>DS(ON)ON-RESISTANCE (Ω)<br>R<br>**----- End of picture text -----**<br>


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50<br>4336 eeeee ie<br>29 ee | |<br>22 TA = 175 ℃ AY<br>15 TA = 150 ℃ Hae TA = 85 ℃<br>TA = 125 ℃ Hi IS TA = 25 ℃<br>8 Hh]<br>TA = -55 ℃<br>1 Oh}<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs Current<br>10<br>8<br>64 | yy<br>/<br>VDS = 20V, ID = 50A<br>2<br>0<br>0 3 6 9 12 15 18 21 24 27<br>Qg (nC)<br>Figure 11 Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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3<br>2.8 a<br>2.6 a<br>2.4<br>2.2 B R ID = 1mA<br>2 o S<br>1.8 oO<br>o S<br>1.6 ID = 250µA<br>1.4 oS TE N\A<br>1.2 a<br>1 a<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 8 Gate Threshold Variation vs<br>Temperature<br>10000<br>f = 1MHz<br>=== aa<br>Ciss<br>| TF ee ee<br>1000<br>ee(== Coss SSS E e<br>See<br>100  PSE EEC<br>SS<br>Crss<br>=== ———<br>a<br>10  a<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>100<br>R<br>DS(ON)<br>Limited<br>10<br>DC<br>1<br>PW = 100s<br>YTwa “KANXN wail<br>anil PW = 10s ERA NT<br>PW = 1s NON<br>0.1 TJ(Max) = 175 ℃ PW = 100ms<br>TVA GS = 25= 10V  ℃ PW =10ms<br>Single Pulse PW = 1ms<br>DUT on 1*MRP Board ll<br>0.01<br>0.01 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. DMNH4011SPS Document number: DS37401  Rev. 2 - 2 

4 of 7 **www.diodes.com** 

April 2016 

© Diodes Incorporated 

**DMNH4011SPS** 

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1<br>SSSSSS SS9S9a9naS9S a SaSSSSrr<br>i Seam Cte<br>ee ee eee ee PT<br>D = 0.9<br>A D = 0.5 So Le D = 0.7 | |<br>D = 0.3<br>TTT ll<br>0.1 Fy SeLe [MCMC] eee aE a ee<br>D = 0.1 ee ee ee ee ee ee ee<br>eeee eZ OfA ee eee ee ee<br>Hi}Ag<br>D = 0.05<br>C e<br>{OT PT<br>D = 0.02<br>0.01 a mL LEI LENE LT<br>saa ee<br>D = 0.01<br>EEF|_| ce, ee eeESeett<br>Lg RK A] | Tih UU<br>a 9 RθJA(t) = r(t) * RθJA TT<br>|| D = 0.005 Oe RθJA = 98 ℃ /W Lt<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>0.001<br>0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. DMNH4011SPS Document number: DS37401  Rev. 2 - 2 

5 of 7 **www.diodes.com** 

April 2016 © Diodes Incorporated 

**DMNH4011SPS** — 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI5060-8<br>**----- End of picture text -----**<br>


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D<br>D1 Detail A PowerDI5060-8<br>0 (4X) Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>c A1  0.00 0.05<br>A1 b 0.33 0.51  0.41<br>b2  0.200 0.350 0.273<br>E1 E<br>b3  0.40 0.80 0.60<br>e c  0.230 0.330 0.277<br>D  5.15 BSC<br>1 Oty 0 1 (4X) D1  4.70 5.10 4.90<br>D2  3.70 4.10 3.90<br>D3  3.90 4.30 4.10<br>b (8X) e/2 E  6.15 BSC<br>1 E1  5.60 6.00 5.80<br>pf L = b2 (4X) ——— E2  3.28 3.68 3.48<br>D3 K — E3 3.99 4.39 4.19<br>e 1.27 BSC<br>G  0.51  0.71  0.61<br>A E3 i E2 PD D2 b3 (4X) K  0.51<br>M<br>YY L  0.51  0.71  0.61<br>ope M1 L1  0.100 0.200 — 0.175<br>Detail A<br>M  3.235 4.035 3.635<br>4 G L1 M1  1.00 1.40 1.21<br>SEEE Θ  10º  12º  11º<br>Θ1  6º  8º  7º<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8** 

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— X4<br>Y2<br>X3 C<br>G<br>Y3 Y1 G1<br>reas sa X<br>aan | 1 X1<br>X2<br>| F X2 4 X3<br>Y5<br>Y4 X1 X4<br>Y7 Y<br>Y1<br>| [_] | Y2<br>C G1 Y3<br>Y6 Y4<br>Y5<br>Y6<br>to t . yehy Y7<br>Y(4x)<br>" To00: X G<br>| LL — _<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>X1  4.100<br>X2  0.755<br>X3  4.420<br>X4  5.610<br>Y  1.270<br>Y1  0.600<br>Y2  1.020<br>Y3  0.295<br>Y4  1.825<br>Y5  3.810<br>Y6  0.180<br>Y7  6.610<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. DMNH4011SPS Document number: DS37401  Rev. 2 - 2 

6 of 7 **www.diodes.com** 

April 2016 © Diodes Incorporated 

**DMNH4011SPS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

POWERDI is a registered trademark of Diodes Incorporated. DMNH4011SPS Document number: DS37401  Rev. 2 - 2 

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April 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMNH4011SPS-13/power-mosfet-n-channel-40-v-13-a-00085-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/diodes-inc/dmnh4011sps-13/mosfet-aec-q101-nch-40v-powerdi/dp/2709542)
---

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