# Power MOSFET, N Channel, 68 V, 100 A, 6200 µohm, TO-220AB, Surface Mount

![Product image](https://novapart.co/image/farnell:3405179RL/)

**URL**: https://novapart.co/products/DMN68M7SCT/power-mosfet-n-channel-68-v-100-a-6200-ohm-to
**SKU**: DMN68M7SCT
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7030
**Stock**: 50+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 68V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 6200µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405179RL/)

~~®~~ **Green** 

**DMN68M7SCT** —— 

## DIODES 

## **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON)**|**ID **<br>**TC = +25°C**|
|---|---|---|
|68V|8.0mΩ@VGS= 10V|100A|



## **Features** 

- 100% Unclamped Inductive Switch (UIS) Test in Production 

- Low Input Capacitance 

- Low Input/Output Leakage 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- Motor Control 

- Backlighting 

- DC-DC Converters 

- Power Management Functions 

## **Mechanical Data** 

- Case: TO220AB 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram Below 

- Weight: 1.85 grams (Approximate) 

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TO220AB (Generic)<br>Top View  Bottom View<br>**----- End of picture text -----**<br>


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D<br>G<br>S<br>Top View<br>Equivalent Circuit  Pin Out Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information **(Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN68M7SCT|TO220AB(Generic)|50Pieces/Tube|



Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

**68M7SCT** 

**YYWW** 

= Manufacturer’s Marking Ji 68M7SCT = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 19 = 2019) WW = Week (01 to 53) 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|68|V|
|Gate-Source Voltage|||VGSS|20|V|
|Continuous Drain Current (Note 5) VGS= 10V|Steady<br>State|TC= +25°C<br>TC= +70°C|ID|100<br>80|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|400|A|
|Pulsed Source Current(10μs Pulse,DutyCycle = 1%)|||ISM|400|A|
|Maximum Continuous BodyDiode Forward Current(Note 5)|||IS|100|A|
|Avalanche Current(Note 6)L = 0.3mH|||IAS|35|A|
|Avalanche Energy (Note 6)L = 0.3mH|||EAS|183|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)                                                                      TC= +25°C<br>TC= +70°C|PD|125<br>80|W|
|Thermal Resistance,Junction to Case(Note 5)|RθJC|1.0|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 7)|||||||
|Drain-Source Breakdown Voltage|BVDSS|68|—|—|V|VGS= 0V,ID= 1mA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|µA|VDS= 68V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 7)|||||||
|Gate Threshold Voltage|VGS(TH)|1.3|—|3|V|VDS= VGS,ID= 250µA|
|Static Drain-Source On-Resistance|RDS(ON)|—|6.2|8.0|mΩ|VGS= 10V,ID= 20A|
|Diode Forward Voltage|VSD|—|0.7|1.2|V|VGS= 0V,IS= 1A|
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~——ee~~|||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~ee~~|—<br>~~ee~~|4260<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= 30V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance<br>~~——~~|Coss<br>~~ee~~|—<br>~~ee~~|430<br>~~ee~~|—<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~ee~~|—<br>~~ee~~|198<br>~~ee~~|—<br>~~ee~~|||
|Gate Resistance<br>~~——~~<br>~~———~~|RG<br>~~ee~~|—<br>~~ee~~|1.75<br>~~ee~~|—<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~—— ~~<br>~~———~~|QG<br> ~~ee~~|—<br>~~ee~~|72.9<br>~~ee~~|—<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~<br>~~ee~~|VDD= 30V, ID= 20A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~|QG|—|36.0|—<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|QGS|—|8.0|—<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~<br>~~———~~|QGD|—|15.3|—<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~———~~<br>~~———~~|tD(ON)|—|6.3|—<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDD= 30V, VGS= 10V,<br>RG= 1Ω, ID= 20A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~———~~|tR|—|18|—<br>~~e~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~———~~|tD(OFF)|—|36|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~———~~|tF|—|9.7|—<br>~~ee~~|||
|Reverse RecoveryTime<br>~~———~~<br>~~Ce~~|tRR<br>~~Ce~~|—<br>~~Ce~~|31.4<br>~~Ce~~|—<br>~~ee~~<br>~~Ce~~|ns<br>~~ee~~<br>~~Ce~~|IF= 20A, di/dt = 100A/µs<br>~~ee~~<br>~~Ce~~|
|Reverse RecoveryCharge<br>~~Ce~~|QRR<br>~~Ce~~|—<br>~~Ce~~|30.1<br>~~Ce~~|—<br>~~Ce~~|nC<br>~~Ce~~||



Notes: 5. Device mounted on infinite heatsink. 6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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100.0 30<br>VGS = 3.5V<br>VGS = 4.0V VDS = 5.0V<br>80.0 Ko VGS = 4.5V 25 ee e<br>VGS = 5.0V<br>VGS = 10V 20<br>VGS = 3.0V eee<br>60.0 fo | e<br>15<br>40.0<br>VGS = 2.7V 10<br>85℃<br>20.0 VGS = 2.5V 5 175℃<br>150℃ 25℃<br>VGS = 2.2V VGS = 2.3V 125℃ -55℃<br>0.0 0<br>0 0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>8 50<br>45<br>7 TTT] 40 6A<br>35<br>6 30<br>Pp Pp A<br>VGS = 10V 25<br>5 20<br>ID = 20A<br>c o ) 15 AR E<br>4 10<br>CPP) A R EER<br>5<br>3 ee 0 See<br>0 30 60 90 120 150 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>20 2.6<br>18 VGS = 10V 2.4<br>2.2<br>16<br>175℃<br>2<br>14<br>1.8<br>12 150℃<br>125℃ 1.6<br>10<br>1.4<br>85℃<br>8<br>1.2<br>== =<br>6 ae 25℃ 1 eee VGS  cece = 10V, ID = 20A<br>4 0.8<br>-55℃<br>2 ao 0.6<br>0 PRES S 0.4 AEE<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with Temperature<br>and Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (mΩ) , DRAIN-SOURCE ON-RESISTANCE (mΩ)<br>DS(ON) DS(ON)<br>R R<br>(mΩ)<br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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20 2<br>18 TT LELLLLL 1.8 Oa<br>16 1.6<br>FEEL ELE SS<br>14 1.4 ID = 1mA<br>12 CCP Perr 1.2 O S<br>a COT SS<br>10 TCE ELA 1 e S<br>8 0.8 ID = 250μA<br>6 COC 0.6 SSR RRESN<br>VGS = 10V, ID = 20A<br>4 er 0.4 rT YS<br>2 S ee 0.2 SEER<br>0 FEE EC Er 0 TOE Eee<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>30 10000<br>VGS = 0V Ciss f = 1MHz<br>2520 eee e  ||e == ee<br>|| ee<br>15 WP 1000 Ne<br>Coss<br>10 HIN e N<br>TA = 175 [o] C<br>TA = 85 [o] C Crss<br>TA = 150 [o] C<br>5<br>A} | IN TA = 25 [o] C OS<br>— TA = 125 [o] C A IR in e<br>TA = -55 [o] C<br>0 Di!)WI 100 | ft |pr_<br>0 0.3 0.6 0.9 1.2 0 10 20 30 40 50 60<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 1000<br>R<br>DS(ON)<br>Limited<br>8 IN il<br>100<br>ROOD<br>6<br>|| ja PW = 1µs / SOND ANH<br>10 PW = 10µs<br>4 PW = 100µs<br>TJ(Max) = 150℃ PW = 1ms<br>1 TC = 25℃ PW = 10ms<br>2 VDS = 30V, ID = 20A Single Pulse<br>DUT on Infinite  PW = 100ms<br>Heatsink PW = 1s<br>VGS = 10V<br>0 0.1 lll Ld<br>0 10 20 30 40 50 60 70 80 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1 eee ae asta i<br>ee<br>ee D=0.7 r eeenec<br>D=0.5 D=0.9<br>FC I AM En MCCUE THT<br>foe D=0.3 imece yn AT se ms kt<br>LY<br>0.1 e e a<br>E D=0.1 E<br>Se a ae A er ct erat<br>D=0.05<br>Erni CTBAM CLL TTT TT<br>Tn Cc Co CEC CC<br>ET D=0.02 eee<br>0.01 AR EEE<br>D=0.01<br>PA ArhEE EEE<br>ee eeeTT<br>| TINA TTPee eee eat<br>CHAS D=0.005  TO CO CC CO RθJA(t) = r(t) * RθJA il<br>D=Single Pulse RθJA = 0.99℃/W<br>Duty Cycle, D = t1 / t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **TO220AB (Generic)** 

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E A<br>E/2 A1<br>Q<br>H1<br>D2<br>D<br>E1<br>D1 L2<br>L1<br>A2<br>b2 4 -<br>L<br>b c<br>e e1<br>   Option A    Option B      Option A      Option B<br>(Top  View) (Top  View) (Bottom  View) (Bottom  View)<br>Ø P<br>**----- End of picture text -----**<br>


|**TO220AB(Generic)**|**TO220AB(Generic)**|**TO220AB(Generic)**|**TO220AB(Generic)**|
|---|---|---|---|
|**Dim Min**|**Dim Min**|**Max**|**Typ**|
|**A**|3.56|4.82|**yp**<br>-|
|**A1**|0.51|1.39|-|
|**A2**|2.04|2.92|-|
|**b**|0.39|1.01|0.81|
|**b2**|1.15|1.77|1.24|
|**c**|0.356|0.61|-|
|**D**<br>~~aan~~|14.22 1<br>~~aan~~|14.22 16.51<br>~~aan~~|-<br>~~aan~~|
|**D1**<br>~~aan~~|8.39<br>~~aan~~|9.01<br>~~aan~~|-<br>~~aan~~|
|**D2**<br>~~aan~~|11.45 12.87<br>~~aan~~|11.45 12.87<br>~~aan~~|-<br>~~aan~~|
|**e**<br>~~aan~~|-<br>~~aan~~|-<br>~~aan~~|2.54<br>~~aan~~|
|**e1**|-|-|5.08|
|**E**|9.66 10.66|9.66 10.66|-|
|**E1**|6.86|8.89|-|
|**H1**|5.85|6.85|-|
|**L**|12.70 14.73|12.70 14.73|-|
|**L1**|-|4.42|-|
|**L2**|15.8017.|17.51 1|1 16.00|
|**P**|3.54|4.08|-|
|**Q**|2.54|3.42|-|
|**All Dimensions in mm**||||



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/dmn68m7sct/mosfet-n-ch-68v-100a-150deg-c/dp/3405179RL)
---

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