# Power MOSFET, N Channel, 60 V, 115 mA, 3 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3943676/)

**URL**: https://novapart.co/products/DMN66D0LW-7/power-mosfet-n-channel-60-v-115-ma-3-ohm-sot-323
**SKU**: DMN66D0LW-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1530
**Stock**: 1000+
**Lead Time**: 358 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 115mA |
| Drain Source On State Resistance | 3ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943676/)

**DMN66D0LW** 

**N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

## **Features** 

## **Mechanical Data** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Small Surface Mount Package 

- ESD Protected Gate, 1KV (HBM) 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- Case: SOT323 

- Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020D 

- Terminals: Solderable per MIL-STD-202, Method 208 **e3** 

- Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). 

- Terminal Connections: See Diagram 

- Weight: 0.006 grams (approximate) 

SOT323 

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Drain<br>D<br>Gate<br>   Gate G S<br>ESD PROTECTED, 1KV TOP VIEW    Protection   Diode Source TOP VIEW<br>@ a Ly<br>**----- End of picture text -----**<br>


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EQUIVALENT CIRCUIT<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN66D0LW-7|SOT323|3000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html 

## **Marking Information** 

MN1 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) **MN1 MN1** YM     = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) **Chengdu A/T Site Shanghai A/T Site** 

Date Code Key **Year 2008 2009 2010 2011 2012 2013 2014 2015** ~~ee~~ **Code** V W X Y Z A B C **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 ~~ee~~ 7 8 ~~ee~~ 9 O ~~ee~~ N D 

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DMN66D0LW Document number: DS31483 Rev. 2 - 2 

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**DMN66D0LW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|VDSS|60|V|
|Gate-Source Voltage  (Note 5)<br>Continuous|VGSS|±20|V|
|Drain Current  (Note 5)<br>Continuous<br>Continuous @ +100°C<br>Pulsed|ID|115<br>73<br>800|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Total Power Dissipation|PD|200|mW|
|Thermal Resistance, Junction to Ambient|RJA|625|°C/W|
|Operating and Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6)**<br>~~[i~~|||||||
|Drain-Source Breakdown Voltage<br>~~[i~~|BVDSS<br>~~[i~~|60<br>~~[i~~<br>~~ee~~|70<br>~~[i~~<br>~~ee~~|<br>~~[i~~<br>~~ee~~|V<br>~~[i~~<br>~~ee~~|VGS= 0V, ID= 10µA<br>~~[i~~|
|Zero Gate Voltage Drain Current<br>@ TC=   +25°C<br> @TC= +125°C<br>~~ee~~|IDSS<br>~~ee~~|<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|1.0<br>500<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~|VDS= 60V, VGS= 0V<br>~~ee~~|
|Gate-BodyLeakage<br>~~Re~~<br>~~[~~|IGSS<br>~~Re~~|<br>~~ee~~<br>~~Re~~|<br>~~ee ~~<br>~~Re~~|±5<br> ~~ee~~<br>~~Re~~|µA<br>~~ee~~<br>~~Re~~|VGS= ±20V, VDS= 0V<br>~~Re~~|
|**ON CHARACTERISTICS(Note 6)**<br>~~Re~~<br>~~[~~|||||||
|Gate Threshold Voltage<br>~~[~~|VGS(th)|1.2||2.0|V|VDS= VGS, ID= 250A|
|Static Drain-Source On-Resistance<br>@ TJ=  +25°C<br> @ TJ= +125°C<br>~~[~~<br>~~RR~~|RDS(ON)<br>~~RR~~|<br>~~RR~~|3.5<br>3.0<br>~~RR~~|6<br>5<br>~~RR~~|Ω<br>~~RR~~|VGS= 5.0V, ID= 0.115A<br>~~RR~~|
|||||||VGS= 10V, ID= 0.115A<br>~~RR~~|
|Forward Transconductance<br>~~nen~~|gFS<br>~~nen~~|80<br>~~nen~~|<br>~~nen~~|<br>~~nen~~|mS<br>~~nen~~|VDS= 10V, ID= 0.115A<br>~~nen~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~nen~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|23<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= 25V, VGS= 0V, f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|3.4<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|1.4<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~||
|**SWITCHING CHARACTERISTICS(Note 7)**<br>~~ee~~<br>~~-}-f+++~~|||||||
|Turn-On DelayTime<br>~~ee~~<br>~~-}-f~~|tD(ON)<br>~~ee~~<br>~~-}-f~~|<br>~~ee~~<br>~~-}-f+++~~|10<br>~~ee~~<br>~~+++~~|<br>~~ee~~<br>~~+++~~|ns<br>~~ee~~<br>~~+++~~|VDD= 30V, ID= 0.115A, RL= 150,<br>VGEN= 10V,RGEN= 25<br>~~ee~~<br>~~+++~~|
|Turn-Off Delay Time<br>~~-}-f~~|tD(OFF)<br>~~-}-f~~|<br>~~-}-f+++~~|33<br>~~+++~~|<br>~~+++~~|ns<br>~~+++~~||



6.  Short duration pulse test used to minimize self-heating effect. 

7.  Guaranteed by design. Not subject to production testing. 

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**DMN66D0LW** | 

## BOB 

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**----- Start of picture text -----**<br>
0.6 1<br>V DS  = 5V<br>0.5 OL Ee SSS Pulsed =<br>0.4<br>a 0.3 n) Zante 0.1 fT<br>2 Yf ff<br>0.2<br>an) Zaeenien —<br>T A  = 150°C<br>ay 0.1 Zamune za T A = 85°C fo TA = 25°C<br>TA = -55°C<br>0 -—-——_ 0.01 Li} a<br>aa T 2 3 e 4 5 1 Hl 2 3 4 a 5<br>Vos: DRAI N- SOURCE VOLTAGE (V) VGS, GATE SOURCE VOLTAGE (V)<br>Fig . 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristics<br>9 2.5<br>8<br>2.0<br>7<br>6<br>1.5<br>7 2 8 a<br>5<br>4 V GS = 5V 1.0<br>3<br>VGS = 10V 0.5<br>2 Sacer nn ee<br>1 Sees 0 EEE<br>0 0.1 0.2 0.3 0.4 0.5 0.6 - 55 - 25 0 25 50 75 100 125<br>ID, DRAIN-SOURCE CURRENT (A) Ta AMBIENT TEMPERATURE (°C)<br>Fig. 3  On-Resistance  vs. Drain Current & Gate Voltage  Fig. 4 Normalized Static Drai n- Source On -R esistance<br>vs. Ambient Temperature<br>2.0 100<br>1.9<br>P| | | | et ty eee<br>1.8 P| tt [| I D  = 250µA || —f- FF<br>1.7 NN || ——<br>1.6 PPE EE Et SS Ciss<br>1.5 10<br>1.4 PPPSPer LL<br>1.3 PEELE NET Et<br>1.2 Pt tt | LIN ee Coss<br>1.1<br>ee SSS<br>1.0 TERE EEE 1 _ | CD peeRe Crss<br>-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40<br>TA, AMBIENT TEMPERATURE (°C) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6  Typical Total Capacitance<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>, CAPACITANCE (pF)<br>T<br>C<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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**==> picture [224 x 211] intentionally omitted <==**

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1<br>0.1<br>— Y/]<br>TA = 150 ° C<br>TA = 125 ° C<br>0.01 San TA = 85°C Jeera<br>0.001 TA = 25°C<br>fff ff TA = -55 ° C<br>re ee ey eee ee ee ee<br>0.0001 iffy ee if |<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7   Reverse Drain Current vs. Source-Drain Voltage<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [343 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
| A f e<br>SOT323<br>Dim  Min  Max  Typ<br>—f i | es A  a 0.25  0.40  0.30<br>B C B  1.15  1.35  1.30<br>a ——— C  2.00  2.20  2.10<br>D  -  -  0.65<br>—== = 5mal es ee<br>G G  1.20  1.40  1.30<br>H H  1.80  2.20  2.15<br>ae es J  ee 0.0  0.10  0.05<br>K M K  0.90  1.00  1.00<br>L  0.25  0.40  0.30<br>a ee M  0.10  0.18  0.11<br>LOD J LT [Joh] r ==s=ee es<br>D L  0°  8°  -<br>es<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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**----- Start of picture text -----**<br>
Y<br>Z<br>| | C<br>X E<br>ie<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Z**|2.8|
|**X**|0.7|
|**Y**|0.9|
|**C**|1.9|
|**E**|1.0|



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DMN66D0LW Document number: DS31483 Rev. 2 - 2 

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**DMN66D0LW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

**www.diodes.com** 

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DMN66D0LW Document number: DS31483 Rev. 2 - 2 

September 2013 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmn66d0lw-7/mosfet-n-ch-60v-0-115a-sot-323/dp/3943676)
---

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