# Power MOSFET, N Channel, 60 V, 400 mA, 0.8 ohm, U-DFN1212, Surface Mount

![Product image](https://novapart.co/image/farnell:3943664/)

**URL**: https://novapart.co/products/DMN62D1LFD-7/power-mosfet-n-channel-60-v-400-ma-08-ohm-u
**SKU**: DMN62D1LFD-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0520
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 500mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4V |
| Transistor Case Style | U-DFN1212 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 400mA |
| Drain Source On State Resistance | 0.8ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943664/)

**DMN62D1LFD** TT **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|~~—_—__~~|~~—_—__~~|~~—_—__~~|
|---|---|---|
|~~—_—__~~|||
|**BVDSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|60V|2Ω@VGS= 4V|400mA|
||2.5Ω@VGS= 2.5V|350mA|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- ESD Protected 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

   - 

   - **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** 

**https://www.diodes.com/quality/product-definitions/** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMN62D1LFDQ)** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: U-DFN1212-3 

   - Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC-DC Converters 

- Power Management Functions 

- Battery Operated Systems and Solid-State Relays 

- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. 

- Terminals: NiPdAu over Copper Leadframe. Solderable per MILSTD-202, Method 208 **e4** 

- Terminal Connections: See Diagram 

- Weight: 0.005 grams (Approximate) 

U-DFN1212-3 (Type C) 

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## **Ordering Information** (Note 4) 

||||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN62D1LFD-7|U-DFN1212-3 (Type C)|3,000/Tape &Reel|
|DMN62D1LFD-13|U-DFN1212-3 (Type C)|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 8 **www.diodes.com** 

DMN62D1LFD Document number: DS36476 Rev. 3 - 2 

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**DMN62D1LFD** 

## **Marking Information** 

Site 1: 

K64 = Product Type Marking Code **K64 K63** K63 = Product Type Marking Code YM = Date Code Marking **YM YM** Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key **Year 2014 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~es~~ **Code** B … H I J K L M N O P R **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~a eee~~ ~~**e** e eee~~ ~~**e** e~~ ~~**ee ee** eeee~~ ~~**ee ee**~~ Site 2: K64 = Product Type Marking Code K63 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0 = 2020) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key **Year 2014 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code** 4 … 0 1 2 3 4 5 6 7 8 9 ~~—— ss ee ee ee ee ee ee ee~~ **Week 1-26 27-52 53 Code** A-Z a-z z ~~a~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~ee~~ **Code** T U V W X ~~ee~~ Y Z 

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DMN62D1LFD Document number: DS36476 Rev. 3 - 2 

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**DMN62D1LFD** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= 4V|TA = +25°C<br>TA = +70°C|ID|400<br>310|mA|
|Pulsed Drain Current(Note 6)||IDM|1|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Power Dissipation (Note 5)|PD|0.5|W|
|Thermal Resistance, Junction to Ambient @TA= +25°C(Note 5)|RθJA|237|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|60<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1|µA|VDS= 60V, VGS= 0V|
|Gate-Source Leakage<br>~~|~~|IGSS<br>~~|~~|—<br>~~|~~|—<br>~~|~~|±100<br>~~|~~|nA<br>~~|~~|VGS= ±5V, VDS= 0V<br>~~|~~|
|||—<br>~~|~~|—<br>~~|~~|±500<br>~~|~~|nA<br>~~|~~|VGS= ±10V, VDS= 0V<br>~~|~~|
|||—<br>~~|~~|—<br>~~|~~|±2<br>~~|~~|µA<br>~~|~~|VGS= ±15V, VDS= 0V<br>~~|~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~I DD~~<br>~~ID OD(OO~~|||||||
|Gate Threshold Voltage<br>~~I~~|VGS(TH)<br>~~I~~<br>~~I DD~~|0.6<br>~~I~~<br>~~DD~~<br>~~ee~~|—<br>~~I~~<br>~~ID OD~~<br>~~eee~~|1<br>~~I~~<br>~~OD~~<br>~~ee~~|V<br>~~I~~<br>~~(OO~~<br>~~ee~~<br>~~Pp~~|VDS= VGS, ID= 250μA<br>~~I~~<br>~~Pp~~|
|Static Drain-Source On-Resistance<br>~~===~~|RDS(ON)<br>~~I DD~~<br>~~===~~|—<br>~~DD~~<br>~~ee~~<br>~~===~~|0.8<br>~~ID OD~~<br>~~eee~~<br>~~===~~|2<br>~~OD ~~<br>~~ee~~<br>~~===~~|Ω<br> ~~(OO~~<br>~~ee~~<br>~~Pp~~<br>~~===~~|VGS= 4V, ID= 100mA<br>~~Pp~~<br>~~===~~|
|||—<br>~~ee~~<br>~~===~~|1<br>~~eee ~~<br>~~===~~|2.5<br> ~~ee~~<br>~~===~~||VGS= 2.5V, ID= 50mA<br>~~Pp~~<br>~~===~~|
|||—<br>~~===~~|1.4<br>~~===~~|3<br>~~===~~||VGS= 1.8V, ID= 50mA<br>~~===~~|
|||—<br>~~===~~|1.8<br>~~===~~|—<br>~~===~~||VGS= 1.5V, ID= 10mA<br>~~===~~|
|Forward Transfer Admittance<br>~~rr~~||Yfs|<br>~~rr~~|—<br>~~rr~~|1.8<br>~~rr~~|—<br>~~rr~~|S<br>~~rr~~|VDS= 10V, ID= 200mA<br>~~rr~~|
|Diode Forward Voltage<br>~~rr~~|VSD<br>~~rr~~|—<br>~~rr~~|0.8<br>~~rr~~|1.3<br>~~rr~~|V<br>~~rr~~|VGS= 0V, IS= 115mA<br>~~rr~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ee~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|36<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~<br>~~i}~~|VDS= 25V, VGS= 0V,<br>f = 1MHz<br>~~ee~~<br>~~i}~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|4.6<br>~~ee~~|—<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~i}~~|Crss<br>~~ee~~<br>~~i}~~|—<br>~~ee~~<br>~~i}~~|3.6<br>~~ee~~<br>~~i}~~|—<br>~~ee~~<br>~~i}~~|||
|Gate Resistance<br>~~i}~~|Rg<br>~~i}~~<br>~~re~~|—<br>~~i}~~<br>~~re~~|59.8<br>~~i}~~<br>~~ee~~|—<br>~~i}~~<br>~~ee~~|Ω<br>~~i}~~<br>~~i~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~i}~~|
|Total Gate Charge<br>~~es~~|Qg<br>~~es~~<br>~~re~~|—<br>~~es~~<br>~~re~~|0.55<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|nC<br>~~es~~<br>~~i~~<br>~~ee~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~es~~<br>~~ee~~|
|Gate-Source Charge<br>~~es~~|Qgs<br>~~es~~<br>~~re~~|—<br>~~es~~<br>~~re~~|0.08<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|||
|Gate-Drain Charge<br>~~es~~<br>~~———~~|Qgd<br>~~es~~<br>~~re~~<br>~~I~~|—<br>~~es~~<br>~~re~~<br>~~ID~~|0.12<br>~~es~~<br>~~ee~~<br>~~I~~|—<br>~~es~~<br>~~ee~~<br>~~I~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~I~~<br>~~———~~|tD(ON)<br>~~re~~<br>~~I~~<br>~~I~~|—<br>~~re ~~<br>~~I~~<br>~~ID~~|2.1<br> ~~ee~~<br>~~I~~<br>~~I~~|—<br>~~ee ~~<br>~~I~~<br>~~I~~<br>~~ee~~|ns<br> ~~i~~<br>~~I~~<br>~~ee~~|VGS= 10V, VDS= 30V,<br>RL= 150Ω, RG= 25Ω,<br>ID= 200mA<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~|tR<br>~~I~~|—<br>~~ID~~|2.8<br>~~I~~|—<br>~~I~~<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~———~~|tD(OFF)<br>~~I~~|—<br>~~ID~~|21<br>~~I~~|—<br>~~I~~<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~———~~|tF<br>~~I~~|—<br>~~ID~~|13.9<br>~~I~~|—<br>~~I~~<br>~~ee~~|ns<br>~~ee~~||



6. Repetitive rating, pulse width limited by junction temperature. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

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0.5 0.5<br>VGS = 2.0V V     = 5.0VDS<br>VGS = 2.5V<br>0.4 V GS = 3.0V 0.4<br>| e e!<br>VGS = 3.5V )A(T<br>VGS = 4.0V NE<br>0.3 VGS = 4.5V RR 0.3<br>U<br>C<br>N<br>0.2 | IA 0.2 |<br>VGS = 1.5V RD<br>, D T   = 150°CA<br>I<br>0.1 | 0.1 T   = 125°CA vi T   = 85°CA<br>VGS = 1.2V T   = 25°CA<br>T   = -55°CA<br>0.0 0<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>3 5<br>4.5 ID = 100mA<br>VGS = 1.8V<br>2.5 Ty) 4 RSS<br>3.5<br>2 3<br>PT UAL) gee ID = 50mA<br>2.5<br>1.5 2<br>BP Ane [eeeseeeee]<br>1.5<br>VGS = 2.5V<br>1 1<br>VGS = 4.5V<br>0.5<br>0.5 0<br>0 el 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>) 2 2.4<br>( V     = 4.5VGS<br>E 1.8<br>C<br>NAT 1.6 EEE T   = 150°CA 2 TE VGS = 4V<br>SISE 1.4 T   = 125°CA ID = 200mA<br>R<br>-NO 1.2 T   = 85°CA 1.6<br>E ———— oo<br>CR 1 VGS  2.5= V<br>UO 0.8 T   = 25°CA 1.2 ID = 100mA<br>S<br>-N<br>IAR 0.6 S T   = -55°CA ee<br>D 0.8<br>0.4<br>, )N<br>O<br>(S 0.2 ——— ett ||<br>D<br>R<br>0.4<br>0<br>0 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150<br>I  , DRAIN CURRENT (A)D TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs. Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>D<br>, DRAIN CURRENT (A)<br> I<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br>


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2.5 1.2<br>1<br>2 TL EELELL TTT TTT<br>VGS  2.5= V 0.8 ID = 1mA<br>ID = 100mA<br>LiL S e<br>1.5<br>0.6<br>VGS  4= V<br>1 ee I D = 200mA 0.4 B S ID = 250μA L<br>0.5 eaeaan 0.2 oC O“EE S<br>0<br>0 TL EELELL -50 PTET -25 0 25  ETT 50 75 100 125 150<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Junction<br>Temperature<br>0.5 100<br>f =  1MHz<br>| SS= C iss<br>)A 0.4<br>(T<br>N<br>E<br>R | | a<br>R 0.3<br>U<br>C 10<br>E<br>C<br>RUOS 0.2 T   = 150°CA Hip T   = 85°CA Nee C oss<br>, S T   = 125°CA Crss<br>I<br>0.1 T   = 25°CA<br>T   = -55°CA<br>0 a 1 fF<br>0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40<br>V    , SOURCE-DRAIN VOLTAGE (V)SD VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 10<br>RDS(ON)<br>Limited<br>PW = 1ms PW = 100µs<br>8<br>1<br>6<br>VIDDS  250m= = 10VA 0.1 PW = 10ms<br>4<br>PW = 100ms<br>TJ(Max) = 150℃ PW = 1s<br>2 0.01 TC = 25℃ PW = 10s<br>Single Pulse DC<br>DUT on 1*MRP<br>Board<br>VGS = 4.5V<br>0 0.001 me ll<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>0.1 1 10 100<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 11 Gate Charge VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>GS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, DRAIN CURRENT (A)<br>ID<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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1<br>D = 0.9<br>teeter D = 0.7<br>D = 0.5<br>gL ae na ALe me HAVA m1] TUTTE ca TOL I TEtteELT<br>a D = 0.3 Ceeeeee eae eel<br>eA ee<br>0.1  LTTE<br>D = 0.1<br>a reise emesis 2a) ae esl eel ee i eA<br>etc tte<br>D = 0.05<br>ra a ae<br>EE a 7<br>D = 0.02<br>Te TITIAN PHT<br>0.01 ae Zan A ee<br>D = 0.01<br>ell D = 0.005 eee eee RRJAθJA(t) = r(t) (t) = r(t) * R *  RθJAJA<br>Ca ni<br>OO A R  R JAθJA   = 23= 23 4 ℃ 癈/W /W I<br>D = Single Pulse Duty Cycle, D = t1/ t2Duty Cycle, D = t1 / t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN1212-3 (Type C)** 

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| A3 U-DFN1212-3<br>A A1 Type C<br>Dim  Min  Max  Typ<br>(ooh Seating Plane EE A  0.47  0.53 0.50<br>A1  0 0.05 0.02<br>pe D a A3  -  -  0.13<br>L e b  0.27  0.37  0.32<br>b1 b1  0.17  0.27  0.22<br>D  1.15 1.25 1.20<br>D2  0.75 0.95 0.85<br>aie =<br>e  -  -  0.80<br>E E  1.15 1.25 1.20<br>D2 E2 E2  0.40 0.60 0.50<br>L1<br>L  0.25 0.35 0.30<br>L1  0.65 0.75 0.70<br>All Dimensions in mm<br>leh b oe<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN1212-3 (Type C)** 

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**----- Start of picture text -----**<br>
X2<br>Y1<br>X1<br>Y2<br>G X<br>Y<br>of: C<br>**----- End of picture text -----**<br>


|**Dimensions**|**Dimensions**<br>**Value**<br>**(in mm)**|
|---|---|
|**C**|0.800|
|**G**|0.200|
|**X**|0.320|
|**X1**|0.520|
|**X2**|1.050|
|**Y**|0.450|
|**Y1**|0.250|
|**Y2**|0.850|



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**DMN62D1LFD** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMN62D1LFD Document number: DS36476 Rev. 3 - 2 

February 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN62D1LFD-7/power-mosfet-n-channel-60-v-400-ma-08-ohm-u)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn62d1lfd-7/mosfet-n-ch-60v-0-4a-u-dfn1212/dp/3943664)
---

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