# Power MOSFET, N Channel, 60 V, 310 mA, 1.3 ohm, X1-DFN1212, Surface Mount

![Product image](https://novapart.co/image/farnell:3943660RL/)

**URL**: https://novapart.co/products/DMN62D0LFD-7/power-mosfet-n-channel-60-v-310-ma-13-ohm-x1
**SKU**: DMN62D0LFD-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0300
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 480mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4V |
| Transistor Case Style | X1-DFN1212 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 310mA |
| Drain Source On State Resistance | 1.3ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943660RL/)

**DMN62D0LFD** TT **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|~~———~~|~~———~~|~~———~~|
|---|---|---|
|**BVDSS**|**RDS(ON) Max**|**ID **<br>**TA = +25°C**|
|60V|2Ω@VGS= 4V|310mA|
||2.5Ω@VGS= 2.5V|295mA|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

## **Description and Applications** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- DC-DC Converters 

- Power Management Functions 

   - Case: X1-DFN1212-3 

- Battery Operated Systems and Solid-State Relays 

- Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 

**==> picture [510 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,<br>Rating 94V-0<br>Memories, Transistors, etc.<br> Moisture Sensitivity:  Level 1 per J-STD-020<br> Terminals: NiPdAu over Copper Leadframe. Solderable per MIL-<br>STD-202, Method 208  e4<br> Terminal Connections: See Diagram<br>  Weight: 0.005 grams (Approximate)<br>G Pin  S<br>D<br>G<br>ESD PROTECTED bes e |) | &<br>Top View  Bottom View  Pin-Out Top View  Equivalent Circuit<br>Ordering Information  (Note 4)<br>**----- End of picture text -----**<br>


- Terminals: NiPdAu over Copper Leadframe. Solderable per MILSTD-202, Method 208 **e4** 

**Part Number Case Packaging** DMN62D0LFD-7 X1-DFN1212-3 3,000/Tape & Reel ~~Co~~ DMN62D0LFD-13 X1-DFN1212-3 10,000/Tape & Reel Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

K63 = Product Type Marking Code **K63** YM = Date Code Marking Y = Year (ex: H = 2020) **YM** M = Month (ex: 9 = September) 

|Date CodeKey<br>**Year**<br>**2013**<br>**…**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**Code**<br>A<br>…<br>H<br>I<br>J<br>K<br>L<br>M<br>~~[/-——} —}—_ | —_ | —_ | —_}—_ }—_ } —_} ~~|Date CodeKey<br>**Year**<br>**2013**<br>**…**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**Code**<br>A<br>…<br>H<br>I<br>J<br>K<br>L<br>M<br>~~[/-——} —}—_ | —_ | —_ | —_}—_ }—_ } —_} ~~|**2026**<br>**2027**<br>N<br>O<br> ~~—_}—_~~|**2028**<br>**2029**<br>P<br>R|
|---|---|---|---|
|**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>~~a~~||||
|DMN62D0LFD<br>1 of 6|||February 2020|
|Document number: DS36359  Rev. 4 - 2<br>**www.diodes.com**|||© Diodes Incorporated|



DMN62D0LFD Document number: DS36359  Rev. 4 - 2 

**DMN62D0LFD** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= 4.0V|TA = +25°C<br>TA = +70°C|ID|310<br>260|mA|
|Pulsed Drain Current(Note 6) (10µs Pulse, DutyCycle = 1%)||IDM|1.0|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Power Dissipation (Note 5)|PD|0.48|W|
|Thermal Resistance, Junction to Ambient @TA= +25°C(Note 5)|RθJA|265|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|60<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~————~~|IDSS|—|—|1.0|μA|VDS= 60V, VGS= 0V|
|Gate-Source Leakage<br>~~————~~|IGSS|—|—|±100|nA|VGS= ±5V, VDS= 0V|
|||—|—|±500|nA|VGS= ±10V, VDS= 0V|
|||—|—|±2.0|μA|VGS= ±15V, VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**<br>~~————~~<br>~~II~~<br>~~IOUD(OO~~<br>~~(OO~~|||||||
|Gate Threshold Voltage<br>~~ID~~|VGS(TH)<br>~~ID~~<br>~~II~~|0.6<br>~~ID~~<br>~~I~~<br>~~ee~~|—<br>~~ID~~<br>~~OUD~~<br>~~ee~~|1.0<br>~~ID~~<br>~~(OO~~<br>~~ee~~|V<br>~~ID~~<br>~~(OO~~<br>~~ee~~|VDS= VGS, ID= 250μA<br>~~ID~~<br>~~(OO~~<br>~~Pe~~|
|Static Drain-Source On-Resistance<br>~~===~~|RDS(ON)<br>~~II~~<br>~~===~~|—<br>~~I ~~<br>~~ee~~<br>~~===~~|1.3<br> ~~OUD ~~<br>~~ee~~<br>~~===~~|2<br> ~~(OO~~<br>~~ee~~<br>~~===~~|Ω<br>~~(OO~~<br>~~ee~~<br>~~===~~|VGS= 4V, ID= 100mA<br>~~(OO~~<br>~~Pe~~<br>~~===~~|
|||—<br>~~ee ~~<br>~~===~~|1.4<br> ~~ee~~<br>~~===~~|2.5<br>~~ee~~<br>~~===~~||VGS= 2.5V, ID= 50mA<br>~~Pe~~<br>~~===~~|
|||—<br>~~===~~|1.8<br>~~===~~|3<br>~~===~~||VGS= 1.8V, ID= 50mA<br>~~===~~|
|||—<br>~~===~~|2.4<br>~~===~~|—<br>~~===~~||VGS= 1.5V, ID= 10mA<br>~~===~~|
|Forward Transfer Admittance<br>~~ee~~||Yfs|<br>~~ee~~|—<br>~~ee~~|1.8<br>~~ee~~|—<br>~~ee~~|S<br>~~ee~~|VDS= 10V, ID= 200mA<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~<br>~~e~~|—<br>~~ee~~<br>~~e~~|0.8<br>~~ee~~|1.3<br>~~ee~~|V<br>~~ee~~|VGS= 0V, IS= 115mA<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~e~~~~**e**~~<br>~~e~~|||||||
|Input Capacitance<br>~~e~~|Ciss<br>~~e~~<br>~~e~~|—<br>~~e~~~~**e**~~<br>~~e~~|31<br>~~**e**~~|—<br>~~**e**~~|pF<br>~~**e**~~<br>~~ff~~|VDS= 25V, VGS= 0V,<br>f = 1.0MHz<br>~~**e**~~<br>~~ff~~|
|Output Capacitance<br>~~e~~|Coss<br>~~e~~<br>~~e~~|—<br>~~e~~~~**e**~~<br>~~e~~|4.3<br>~~**e**~~|—<br>~~**e**~~|||
|Reverse Transfer Capacitance<br>~~e~~<br>~~ff~~|Crss<br>~~e~~<br>~~e~~<br>~~ff~~|—<br>~~e~~~~**e**~~<br>~~e~~<br>~~ff~~<br>~~ee~~|3.0<br>~~**e**~~<br>~~ff~~<br>~~ee~~|—<br>~~**e**~~<br>~~ff~~<br>~~ee~~|||
|Gate Resistance<br>~~ff~~|Rg<br>~~e~~<br>~~ff~~|—<br>~~e~~<br>~~ff~~<br>~~ee~~|99<br>~~ff~~<br>~~ee~~|—<br>~~ff~~<br>~~ee~~|Ω<br>~~ff~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ff~~|
|Total Gate Charge<br>~~ee~~|Qg<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|0.5<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~oe~~<br>~~ee~~|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~ee~~|Qgs<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|0.09<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|||
|Gate-Drain Charge<br>~~ee~~<br>~~oe~~<br>~~—<—~~|Qgd<br>~~ee~~<br>~~oe~~|—<br>~~ee~~<br>~~ee~~<br>~~oe~~<br>~~ID~~|0.07<br>~~ee~~<br>~~ee~~<br>~~oe~~<br>~~I~~|—<br>~~ee~~<br>~~ee~~<br>~~oe~~<br>~~I~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~oe~~<br>~~—<—~~|tD(ON)<br>~~oe~~|—<br>~~ee~~<br>~~oe~~<br>~~ID~~|2.6<br>~~ee~~<br>~~oe~~<br>~~I~~|—<br>~~ee~~<br>~~oe~~<br>~~I~~<br>~~ee~~|ns<br>~~oe~~<br>~~ee~~|VGS= 10V, VDS= 30V,<br>RL= 150Ω, RG= 25Ω,<br>ID= 200mA<br>~~ee~~|
|Turn-On Rise Time<br>~~nD~~<br>~~—<—~~|tR<br>~~nD~~|—<br>~~nD~~<br>~~ID~~|2.1<br>~~nD~~<br>~~I~~|—<br>~~nD~~<br>~~I~~<br>~~ee~~|ns<br>~~nD~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<—~~|tD(OFF)|—<br>~~ID~~|18<br>~~I~~|—<br>~~I~~<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<—~~|tF|—<br>~~ID~~|8.7<br>~~I~~|—<br>~~I~~<br>~~ee~~|ns<br>~~ee~~||



6. Repetitive rating, pulse width limited by junction temperature. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

2 of 6 **www.diodes.com** 

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**DMN62D0LFD** 

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0.5 0.5<br>VGS = 10V<br>V     = 5.0VDS<br>0.4 VGS = 4.5V V GS = 4.0V 0.4<br>VGS = 3.5V<br>0.3 Poca 0.3 pf e<br>VGS = 3.0V<br>VGS = 2.5V<br>0.2 |Senne VGS = 2.0V 0.2 T   = 150°CA ie T   = 85°CA<br>VGS = 1.5V<br>0.1 0.1 T   = 125°CA T   = 25°CA<br>VGS = 1.2V T   = -55°CA<br>0.0 AZfo 0 DD_ —_<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1  Typical Output Characteristics Figure 2  Typical Transfer Characteristics<br>2.5 3.0<br>2.3 V     = 4.5VGS T   = 150°CA<br>|} A} 2.5 Le<br>2.1<br>VGS = 2.5V<br>1.9 T   = 125°CA<br>HAR 2.0 EET EE<br>1.7<br>VGS = 4.5V T   = 85°CA<br>1.5 oo 1.5 ————<br>| | oo ee<br>1.3<br>T   = 25°CA<br>VGS = 10V 1.0<br>1.1 — —<br>0.9 r-— ft T   = -55°CA<br>0.5<br>0.7 pp<br>0.5 ee 0 ef<br>| | pt<br>0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Figure 3  Typical On-Resistance vs.  Figure 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>2.4 3.0<br>2.5<br>2.0 VGS  2= .5V<br>| ID = 100mA LY<br>VGS  4= V<br>eT EELELL ID = 200mA 2.0 2<br>1.6 VGS  4= V<br>ID = 200mA<br>oie 1.5 Eee<br>VGS  2= .5V<br>1.2 I D = 100mA<br>1.0<br>0.8<br>0.4-50 TIELELE) -25 ya 0 25 50 75 100 125 150 0.50-50 a= -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6  On-Resistance Variation with Temperature<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br> I<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**www.diodes.com** 

**DMN62D0LFD** 

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1.2<br>1.0<br>SELLE<br>I    = 1mADD<br>Beeeeeen<br>0.8<br>I   = 250µADD<br>FESS<br>0.6<br>CLL PASOS<br>0.4 LLL<br>-50 -25 0 25 50 75 100 125 150<br>T  , JUNCTION TEMPERATURE (C)JJ <br>Figure 7  Gate Threshold Variation vs. Junction Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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1.2 0.5<br>0.4<br>1.0<br>SELLE<br>0.3<br>I    = 1mADD<br>Beeeeeen<br>0.8 I   = 250µADD T   = 25°CA<br>0.2<br>FESS<br>0.6<br>CLL PASOS 0.1<br>0.4 LLL 0<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>T  , JUNCTION TEMPERATURE (C)JJ  V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 7  Gate Threshold Variation vs. Junction Temperature Figure 8  Diode Forward Voltage vs. Current<br>100 10<br>er /<br>a 8<br>Ciss<br>SS VA<br>6 VIDDS  250m= = 10VA<br>10<br>Giana HA<br>4<br>C oss<br>—S Crss 2 Lf<br>f = 1MHz<br>1 0<br>0 10 20 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2<br>Pry VDS, DRAIN-SOURCE VOLTAGE (V) Yili Qg [, TOTAL GATE CHARGE ] tl (nC)<br>Figure 9  Typical Junction Capacitance Figure 10  Gate Charge<br>1<br>D = 0.9<br>ECE D = 0.7 ret<br>Piensa D = 0.5 ee ce viii<br>pee D = 0.3 |<br>0.1<br>D = 0.1<br>D = 0.05<br>SEU i eseaah eee emt wT eH<br>D = 0.02<br>area FH TPHFR HARP -HE TEHE A<br>0.01<br>D = 0.01<br>D = 0.005 R JA(t) = r(t)  *  R JA<br>a me ee R  JA  = 256°C/W lil<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001 Se i aah et a<br>0.000001 cou 0.00001 EEE 0.0001 ETE 0.001 TLE 0.01 TA 0.1 TTT 1 10 100 il 1,000<br>t1, PULSE DURATION TIME (sec)<br>Figure 11  Transient Thermal Resistance<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, SOURCE CURRENT (A)<br>IS<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMN62D0LFD Document number: DS36359  Rev. 4 - 2 

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**DMN62D0LFD** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **X1-DFN1212-3** 

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**----- Start of picture text -----**<br>
A<br>A3<br>A1<br>X1-DFN1212-3<br>Seating Plane<br>Dim  Min  Max  Typ<br>A  0.47  0.53 0.50<br>D A1  0 0.05 0.02<br>__- e Ab3 0.27 -  0.- 37  00.1.332<br>b1  0.17  0.27  0.22<br>D  1.15 1.25 1.20<br>b1(2x)<br>E  1.15 1.25 1.20<br>E e  -  -  0.80<br>L  0.25 0.35 0.30<br>All Dimensions in mm<br>FS.<br>b L(3x)<br>‘Lot<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **X1-DFN1212-3** 

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**----- Start of picture text -----**<br>
X<br>Y<br>Y2 X1<br>(2x)<br>Y1<br>(2x)<br>le C<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|0.80|
|**X**|0.42|
|**X1**|0.32|
|**Y**|0.50|
|**Y1**|0.50|
|**Y2**|1.50|



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DMN62D0LFD Document number: DS36359  Rev. 4 - 2 

February 2020 © Diodes Incorporated 

**DMN62D0LFD** 

## **IMPORTANT NOTICE** 

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN62D0LFD Document number: DS36359  Rev. 4 - 2 

February 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN62D0LFD-7/power-mosfet-n-channel-60-v-310-ma-13-ohm-x1)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn62d0lfd-7/mosfet-n-ch-60v-0-31a-x1-dfn1212/dp/3943660RL)
---

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