# Power MOSFET, N Channel, 60 V, 340 mA, 1.2 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3127349RL/)

**URL**: https://novapart.co/products/DMN61D9UW-7/power-mosfet-n-channel-60-v-340-ma-12-ohm-sot-323
**SKU**: DMN61D9UW-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0460
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 320mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 320mW |
| Rds(On) Test Voltage | 5V |
| On Resistance Rds(On) | 1.2ohm |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 340mA |
| Drain Source On State Resistance | 1.2ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127349RL/)

**DMN61D9UW** dd **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|---|---|---|
|60V|2Ω@VGS= 5.0V|340mA|
||2.5Ω@VGS= 2.5V|300mA|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- ESD Protected Up To 2kV 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- Motor Control 

- Power Management Functions 

- Backlighting 

## **Mechanical Data** 

- Case: SOT323 

- Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability  Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

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 Terminals: Finish  Matte Tin Annealed over Alloy 42<br>Leadframe.  Solderable per MIL-STD-202, Method 208<br> Weight: 0.006 grams (Approximate)<br>D<br>SOT323<br>D<br>G<br>G S<br>i a Gate Protection Diode S<br>Top View  Equivalent Circuit  Top View<br> Information (Note 4)<br>Part Number Case Packaging<br>DMN61D9UW-7  SOT323  3,000/Tape & Reel<br>DMN61D9UW-13 SOT323 10,000/Tape & Reel<br>**----- End of picture text -----**<br>


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ESD protected up to 2kV<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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1AC= Product Type Marking Code<br>YM  = Date Code Marking<br>Y or Y = Year (ex: C = 2015)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2014 2015 2016 2017 2018 2019 2020  2021  2022  2023  2024  2025<br>FF Code B  C  D  E  F  G  H  I  J  K  L  M<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>ee Code 1  2  3 4  5 6 7  8 9 O N  D<br>DMN61D9UW 1 of 6  November 2015<br>www.diodes.com   © Diodes Incorporated<br>**----- End of picture text -----**<br>


DMN61D9UW Document number: DS38027 Rev. 2 - 2 

November 2015 © Diodes Incorporated 

**DMN61D9UW** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 5.0V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|340<br>270|mA|
||t<5s|TA= +25°C<br>TA= +70°C|ID|400<br>300|mA|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|0.4|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%) (Note 6)|||IDM|1.2|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|320|mW|
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|393|°C/W|
||t<5s||306||
|Total Power Dissipation(Note 6)||PD|440|mW|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|289|°C/W|
||t<5s||235||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|60<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~rr~~|IDSS<br>~~rr~~|—<br>~~rr~~|—<br>~~rr~~|1.0<br>~~rr~~|µA<br>~~rr~~|VDS= 60V,VGS= 0V<br>~~rr~~|
|Gate-Source Leakage<br>~~rr~~|IGSS<br>~~rr~~|—<br>~~rr~~|—<br>~~rr~~|±10<br>~~rr~~|µA<br>~~rr~~|VGS= ±20V,VDS= 0V<br>~~rr~~|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~fe~~|VGS(TH)<br>~~fe~~|0.5<br>~~fe~~|—<br>~~fe~~|1.0<br>~~fe~~|V<br>~~fe~~|VDS= 10V,ID= 250µA<br>~~fe~~|
|Static Drain-Source On-Resistance<br>~~|~~|RDS(ON)<br>~~|~~|—<br>~~|~~|1.2<br>1.6<br>2.5<br>~~|~~|2.0<br>2.5<br>3.5<br>~~|~~|Ω<br>~~|~~|VGS= 5.0V,ID= 0.05A<br>~~|~~|
|||||||VGS= 2.5V,ID= 0.05A<br>~~|~~|
|||||||VGS= 1.8V,ID= 0.05A<br>~~|~~|
|Forward Transconductance<br>~~|~~||Yfs|<br>~~|~~|200<br>~~|~~|—<br>~~|~~|—<br>~~|~~|mS<br>~~|~~|VDS=10V,ID= 0.2A<br>~~|~~|
|Diode Forward Voltage<br>~~ff~~|VSD<br>~~ff~~|—<br>~~ff~~|0.75<br>~~ff~~|1.4<br>~~ff~~|V<br>~~ff~~|VGS= 0V,IS= 115mA<br>~~ff~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ee~~<br>~~|~~|||||||
|Input Capacitance<br>~~|~~<br>~~———~~<br>~~|~~|Ciss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|28.5<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|pF<br>~~———~~|VDS= 30V, VGS= 0V<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~<br>~~|~~|Coss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|3.9<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~<br>~~|~~|Crss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|2.5<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~<br>~~|~~|Rg<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|65<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|Ω<br>~~———~~|f = 1MHz,VGS= 0V,VDS= 0V<br>~~———~~|
|Total Gate Charge<br>~~|~~|Qg<br>~~ee~~|—<br>~~ee~~|0.4<br>~~ee~~|—<br>~~ee~~|nC|VGS= 4.5V, VDS= 10V,<br>ID= 250mA<br>~~ee~~|
|Gate-Source Charge|Qgs|—|0.1|—|nC||
|Gate-Drain Charge<br>~~——————~~|Qgd|—|0.1|—|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~——————~~|tD(ON)|—|2.1|—|ns<br>~~ee~~|VDD= 30V, VGS= 10V,<br>RG= 25Ω, ID= 200mA<br>~~ee~~|
|Turn-On Rise Time<br>~~——————~~|tR|—|1.8|—|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~——————~~|tD(OFF)|—|14.4|—|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——————~~|tF|—|8.4|—|ns<br>~~ee~~||



6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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1.0 0.8<br>VDS = 5.0V<br>0.8<br>VGS  = 10V 0.6<br>VGS = 4.5V<br>0.6 VGS = 3.0V<br>Fo VGS = 2.5V 0.4 —f<br>0.4 VGS = 2.0V<br>TA = 150 C<br>0.2 V GS  = 1.8V 0.2 T A  = 125 C T A  = 85C<br>TA = 25 C<br>| VGS = 1.5V f TA  = -55 C<br>0.0 zm 0 LZ<br>0 1 2 3 4 5 0.5 1 1.5 2 2.5 3<br>V DS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>3.54 | 3<br>| | A<br>3 | 2.5<br>| [ft<br>2.5 |<br>| if}<br>2 V GS  = 2.5V 2 ID = 50mA<br>1.5<br>1 VGS = 5.0V 1.5<br>0.5 a<br>{| |<br>0 |ee 1 L<br>0 0.2 | 0.4 ft 0.6 tf 0.8 1 0 5 10 15 20<br>ID, DRAIN SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>4.5 2.2<br>VGS = 2.5V<br>4 VGS = 4.5V 2 I D = 50mA<br>3.5 FE 1.8 ETE<br>3<br>TA  = 150 C 1.6<br>2.5 ———- TA = 125 C 1.4 OK VGS = 5.0V<br>2 TA  = 85C ID = 50mA<br>=e 1.2 OULU<br>1.5 T A  = 25 C aaa 4<br>1 T A  = -55 C 1<br>0.5 —— 0.8 ete<br>0 a 0.6 AO<br>0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN SOURCE CURRENT (A) T , JUNCTION TEMPERATURE (J C)<br>Figure 5 Typical On-Resistance vs.  Figure 6 On-Resistance Variation with Junction<br>Drain Current and Temperature  Temperature<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMN61D9UW** 

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100<br>aa<br>aa<br>a Qe GO |<br>C iss<br>10<br>PN————— C oss<br>C rss<br>SS<br>f = MHf=1MHz Z<br>1<br>Po ttt<br>0 5 10 15 20 25 30 35 40<br>VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Typical Junction Capacitance<br>, JUNCTION CAPACITANCE (pF)<br>CT<br>**----- End of picture text -----**<br>


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4.5<br>4 j<br>3.5 VDS = 10V<br>ID = 250mA<br>3<br>2.5<br>2<br>1.5 on<br>1<br>0.5<br>0<br>0 / 0.1 0.2 0.3 0.4 0.5<br>Q g, TOTAL GATE CHARGE (nC)<br>Figure 10 Gate Charge<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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10<br>R DS(on)<br>Limited Coeee<br>a<br>a ||<br>1 NY<br>ee<br>INNS eee<br>0.1<br>DC<br>PW = 10s<br>pe PW = 1s TORRES naa<br>0.01 ey T J (m ax ) = 150 ° C PW = 100ms PW NN  = 10ms St inl<br>T C = 25°C PW = 1ms<br>V GS  = 5V es a P W  = 100µs<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.001 ST Co<br>0.1 1 10 100<br>V DS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 SOA, Safe Operation Area<br>D<br>, DRAIN CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


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1<br>D = 0.9<br>D = 0.7<br>PCI D = 0.5 IICICI<br>D = 0.3<br>TTT TT<br>0.1 D = 0.1<br>RE ee<br>D = 0.05<br>PEE eeAT<br>ec D = 0.02 EE<br>0.01<br>Seer D = 0.01 eee ce eeececa<br>A D = 0.005 en R JA (t) = r(t) * R era JA Hl<br>R JA  = 391°C/W<br>Single Pulse Duty Cycle, D = t1/ t2<br>0.001 cSee a elll<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 12  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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D<br>an<br>SOT323<br>A2 P| | C_tS™S—SS<br>Dim  Min  Max  Typ<br>A1  0.00 0.10 0.05<br>ces c a ee A2  0.90 1.00 0.95<br>A1 e L b  0.25 0.40 0.30<br>L_| e eseeee<br>c  0.10 0.18 0.11<br>ee ee<br>b D  1.80 2.20 2.15<br>E  2.00 2.20 2.10<br>“Tr ee ee<br>E1  1.15 1.35 1.30<br>T eea e  0.650 BSC<br>e1  1.20 1.40 1.30<br>F  0.375 0.475 0.425<br>E E1 L  0.25 0.40 0.30<br>a 8°<br>ee || ee t~‘“SCCY— All Dimensions in mm<br>il il<br>F e1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version 

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X<br>_<br>Y Dimensions  Value<br>(in mm)<br>es C  0.650<br>es G  1.300<br>Y1 G 4 es X  0.470<br>Y  0.600<br>Y1  2.500<br>ee<br>TL es<br>LL. C<br>**----- End of picture text -----**<br>


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**DMN61D9UW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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DMN61D9UW Document number: DS38027 Rev. 2 - 2 

November 2015 © Diodes Incorporated 



## Links

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- [Supplier page](https://es.farnell.com/en-ES/diodes-inc/dmn61d9uw-7/mosfet-n-ch-60v-0-34a-sot323/dp/3127349RL)
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