# Power MOSFET, N Channel, 60 V, 1.6 A, 0.14 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2543545RL/)

**URL**: https://novapart.co/products/DMN6140L-7/power-mosfet-n-channel-60-v-16-a-014-ohm-sot-23
**SKU**: DMN6140L-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0900
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 700mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.6A |
| Drain Source On State Resistance | 0.14ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2543545RL/)

**DMN6140L** — **60V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

**==> picture [211 x 46] intentionally omitted <==**

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|||
|---|---|
|ID|
|V(BR)DSS|RDS(on) max|
|TA = +25°C|
|140m @ VGS = 10V|2.3A|
|60V|
|170m @ VGS = 4.5V|2.1A|

**----- End of picture text -----**<br>


## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

## **Applications** 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC-DC Converters 

- Power Management Functions 

- Terminal Connections: See Diagram 

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|||||
|---|---|---|---|
||Analog Switch||Terminals: Finish – Matte Tin Annealed over Copper Leadframe.|
|Solderable per MIL-STD-202, Method 208|e3|
||Weight: 0.0072 grams (Approximate)|
|D|
|SOT23|
|D|
|G|
|G|S|
|~|oo|&|
|S|
|Top View|Pin Configuration|Equivalent Circuit|
|Ordering Informationg Information Information|(Note 4)|
|Part Number|Case|Packaging|
|DMN6140L-7|SOT23|3,000/Tape|& Reel|
|DMN6140L-13|SOT23|10,000/Tape & Reel|

**----- End of picture text -----**<br>


- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.0072 grams (Approximate) 

## **Ordering Informationg Information Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
N61 = Marking Code<br>N61 YM = Date Code Marking<br>Y = Year (ex: Y = 2011)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2011 2012 2013 2014 2015 2016 2017<br>Code Y  Z  A  B  C  D  E<br>_————<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3  4  5  6  7  8  9  O  N  D<br>-_———f — —} — —} — | —} — |} — | — }— —_<br>YM<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

DMN6140L Document number: DS35621  Rev. 4 - 2 

December 2014 © Diodes Incorporated 

**DMN6140L** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|20|V|
|Continuous Drain Current (Note 5) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|1.6<br>1.2|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|2.0<br>1.6|A|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|2.3<br>1.8|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|2.9<br>2.3|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|1.5|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)|||IDM|10|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.7|W|
||TA= +70°C||0.4||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RJA|183|°C/W|
||t<10s||115||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.3|W|
||TA= +70°C||0.8||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RJA|94|°C/W|
||t<10s||61||
|Thermal Resistance,Junction to Case||RJC|39||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|60|—|—|V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|µA|VDS= 60V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS=20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1<br>~~ee~~|—<br>~~ee~~|3<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250µA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|92<br>~~ee~~|140<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 1.8A<br>~~ee~~|
||||115<br>~~ee~~|170<br>~~ee~~||VGS= 4.5V,ID= 1.3A<br>~~ee~~|
|Forward Transfer Admittance<br>~~ee~~||Yfs|<br>~~ee~~|—<br>~~ee~~|2.2<br>~~ee~~|—<br>~~ee~~|S<br>~~ee~~|VDS= 15V,ID= 1.8A<br>~~ee~~|
|Diode Forward Voltage|VSD|—|0.75|1.0|V|VGS= 0V,IS= 0.45A|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ee~~<br>~~————~~|||||||
|Input Capacitance<br>~~——~~<br>~~————~~|Ciss<br>~~——~~|—<br>~~——~~|315<br>~~——~~<br>~~ee~~|—<br>~~——~~<br>~~ee~~|pF<br>~~——~~<br>~~ee~~|VDS= 40V, VGS= 0V<br>f = 1.0MHz<br>~~——~~|
|Output Capacitance<br>~~——~~<br>~~————~~|Coss<br>~~——~~|—<br>~~——~~|18<br>~~——~~<br>~~ee~~|—<br>~~——~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~——~~<br>~~————~~|Crss<br>~~——~~|—<br>~~——~~|16<br>~~——~~<br>~~ee~~|—<br>~~——~~<br>~~ee~~|||
|Gate Resistnace<br>~~——~~<br>~~————~~<br>~~—_———~~|Rg<br>~~——~~|—<br>~~——~~|0.65<br>~~——~~<br>~~ee~~|—<br>~~——~~<br>~~ee~~<br>~~**ee**~~|Ω<br>~~——~~<br>~~ee~~<br>~~**ee**~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~——~~<br>~~**ee**~~|
|Total Gate Charge(VGS= 10V)<br>~~————~~<br>~~—_———~~|Qg|—|8.6<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~|nC<br>~~ee~~<br>~~**ee**~~|VDS= 30V, ID= 1.8A<br>~~**ee**~~|
|Total Gate Charge(VGS= 5V)<br>~~————~~<br>~~—_———~~|Qg|—|4.1<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~|||
|Gate-Source Charge<br>~~————~~<br>~~—_———~~|Qgs|—|1.0<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~|||
|Gate-Drain Charge<br>~~————~~<br>~~—_———~~|Qgd|—|1.7<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~|||
|Turn-On DelayTime<br>~~————~~<br>~~—_———~~|tD(on)|—|2.6<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~|ns<br>~~ee~~<br>~~**ee**~~<br>~~EE]~~|VDS= 30V, VGS= 10V,<br>RG= 6.0ΩID= 1.8A<br>~~**ee**~~<br>~~EE]~~|
|Turn-On Rise Time<br>~~————~~<br>~~—_———~~|tr|—|3.6<br>~~ee~~|—<br>~~ee~~<br>~~**ee**~~|||
|Turn-Off DelayTime<br>~~—_———~~|tD(off)|—|16.3|—<br>~~**ee**~~|||
|Turn-Off Fall Time<br>~~—_———~~|tf|—|2.7|—<br>~~**ee**~~<br>~~EE]~~|||
|Reverse RecoveryTime<br>~~—_———~~<br>~~EEE~~|trr<br>~~EEE~~|—<br>~~EEE~~|16.8<br>~~EEE~~|—<br>~~**ee**~~<br>~~EEE~~<br>~~EE]~~|ns<br>~~**ee**~~<br>~~EEE~~<br>~~EE]~~|IF= 1.8A, di/dt =100A/µs<br>~~**ee**~~<br>~~EEE~~<br>~~EE]~~|
|Reverse RecoveryCharge<br>~~EEE~~|Qrr<br>~~EEE~~|—<br>~~EEE~~|9.0<br>~~EEE~~|—<br>~~EEE~~<br>~~EE]~~|nC<br>~~EEE~~<br>~~EE]~~||



- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1in. square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to production testing. 

2 of 6 **www.diodes.com** 

DMN6140L Document number: DS35621  Rev. 4 - 2 

December 2014 © Diodes Incorporated 

**DMN6140L** 

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DMN6140L<br>LOLS. |<br>10.0 8<br>VDS = 5.0V<br>9.0<br>VGS = 10V VGS = 4.5V<br>8.0<br>fe<br>6<br>7.0 Ye V GS = 4.0V<br>VGS = 3.5V<br>6.0 f—<br>5.0 2)Pa 4<br>4.0 Yr<br>3.0 VGS = 3.0V<br>fp 2 7 T A  = 150°C f<br>2.0<br>1.0 VGS = 2.5V TA = 125°C TA = 25°CTA = 85°C<br>TA = -55°C<br>0.0 pr 0 if<br>0 1 2 3 4 5 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.180.2 TTL. 0.5<br>ID = 1.8A<br>0.16 0.4<br>0.14<br>soaeeee VGS = 4.5V Lae<br>0.12<br>a 0.3 AL ELLE<br>0.1<br>eter VGS = 10V |<br>0.08<br>0.2<br>0.06<br>Tet \<br>0.04 0.1 ID = 1.3A<br>0.02 See NUE<br>0<br>1 a 2 3 4 5 6 7 8 0 tL ELE<br>ID, DRAIN-SOURCE CURRENT (A) 2 3 4 5 6 7 8 9 10<br>Figure 3 Typical On-Resistance vs. VGS, GATE-SOURCE VOLTAGE (V)<br>Drain Current and Gate Voltage Figure 4 Typical Drain-Source On Resistance<br>vs. Gate-Source Voltage<br>0.4 2.2<br>0.36 ee VGS = 4.5V 2 PT [TTT]<br>1.8 VGS  10= V<br>0.32 ID =5.0A<br>0.28 SEE 1.6 +HH TybY<br>TA = 150°C 1.4<br>0.24 VGS = 4.5V<br>1.2 ID = 2.5A<br>0.2 SaeEe=a TA = 125°C >= > aaC4<br>1<br>0.16 TA = 85°C<br>po TA = 25°C 0.8 HER aA<br>0.12 0.6 > ane<br>0.08 to 0.4 Tee<br>TA = -55°C<br>0.04 FECT 0.2 SEE<br>0 PEEL LEL LL 0 ee<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs. Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>)<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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December 2014 © Diodes Incorporated 

**DMN6140L** 

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0.3<br>0.24<br>0.18 V GS = 4.5V<br>ID = 2.5A<br>—<br>VGS  10= V<br>0.12 rs I D = 5.0A<br>0.06 yaa aan<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature<br>109 | | | | hf|<br>a<br>8<br>7<br>is [ee]<br>6<br>5<br>TA = 25°C<br>43 |a| |e<br>2 ee<br>1 a<br>0<br>0 tT 0.2 0.4 0.6 0.8 1  _ 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current<br>10<br>VDS = 30V<br>ID  1.8= A<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 11 Gate Charge<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>S<br>, SOURCE CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


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3<br>2.7<br>2.4<br>2.1<br>1.8<br>ID = 1mA<br>1.5 eee ID = 250µA<br>1.2 +] ——|<br>0.9<br>0.6 || P t | it | eeoo_<br>0.3<br>0<br>-50 -25 0 25 50 75 100 125 150<br>T,, JUNCTION TEMPERATURE (°C)<br>Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>1000 -_—————— —— |<br>===<br>a<br>—— C iss<br>A<br>100<br>ss<br>—————QQ<br>REEEESS=<br>ANiseGQ<br>SSE Coss<br>S f=1MHz SS Crss<br>10<br>0 pp 5  LLLP 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>100<br>| RDS(on) ee<br>Limited PW = 10µs<br>10 eeewd aye<br>Sa Sa<br>PSS<br>1<br>PW = 10s<br>PW = 1s<br>OS aan<br>0.1 PW = 100ms<br>PW = 10ms<br>P W  = 1ms<br>T J(max)  = 150°C Co P W  = 100µs SST<br>0.01 TA = 25°C SD eee lil<br>VGS = 10V<br>Single Pulse ee<br>0.001 DUT on 1*MRP board a<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, DRAIN CURRENT (A)<br>ID<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMN6140L Document number: DS35621  Rev. 4 - 2 

December 2014 © Diodes Incorporated 

**DMN6140L** 

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1 D = 0.9<br>D = 0.7<br>LCE D = 0.5 ET tam LIL<br>er D = 0.3 ==<br>0.1<br>D = 0.1<br>EEEEPI D = 0.05 reeA TE TT<br>D = 0.02<br>Con eee CT<br>0.01<br>D = 0.01<br>D = 0.005<br>CoC Ce I R JA (t) = r(t) * R JA ||<br>Se ot R JA = 169°C/W<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>cecum ELTINI- EERIE TCETINE-E LITLE ETI |<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [450 x 183] intentionally omitted <==**

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All 7°<br>H<br>SOT23<br>-— — GAUGE PLANE ——<<br>0.25 Dim  Min  Max  Typ<br>K1 K J A  0.37  0.51  0.40<br>|  fs es B  1.20  ee 1.40  1.30<br>Ea a ee C  2.30  2.50  2.40<br>A tf M I D  0.89  1.03  0.915<br>L L1 F  0.45 0.60 0.535<br>e s oe ee e e eee es ee ee<br>G  1.78 2.05 1.83<br>H  2.80 3.00 2.90<br>C | B ee| ol EEE K J  00.890 .013 01.00 .10 0.975 0.05<br>——-—J aes K1  0.903  ee 1.10  ee 1.025<br>L  0.45  0.61  0.55<br>| [r][L___si”#tx] ——|—— SS L1  0.25  0.55  0.40<br>roTT D SS M  0.085 0.150  0.110<br>F G  8°<br>lL =F eeee<br>All Dimensions in mm<br>[-——<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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||||||
|---|---|---|---|---|
|Y|+|Dimensions Value (in mm)|
|Z|2.9|
|TOE;|Z|C|X|0.8|
|Y|0.9|
|C|2.0|
|E|1.35|
|X|E|
|||Ey|EP|

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DMN6140L Document number: DS35621  Rev. 4 - 2 

December 2014 © Diodes Incorporated 

**DMN6140L** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN6140L Document number: DS35621  Rev. 4 - 2 

December 2014 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN6140L-7/power-mosfet-n-channel-60-v-16-a-014-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn6140l-7/mosfet-n-ch-20v-sot-23-3/dp/2543545RL)
---

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