# Power MOSFET, N Channel, 60 V, 4.1 A, 0.068 ohm, SOT-223, Surface Mount
**URL**: https://novapart.co/products/DMN6068SE-13/power-mosfet-n-channel-60-v-41-a-0068-ohm-sot-223
**SKU**: DMN6068SE-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2130
**Stock**: 1000+
**Lead Time**: 190 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.068ohm |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.1A |
| Drain Source On State Resistance | 0.068ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3127342RL/)
**A Product Line of Diodes Incorporated DMN6068SE** [ **60V N-CHANNEL ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)**|**ID**
**TA = +25****C**|
|60V|68mΩ@VGS= 10V|5.6A|
||100mΩ@VGS= 4.5V|4.7A|
## **Features and Benefits**
- 100% Unclamped Inductive Switch (UIS) test in production
- Low on-resistance
- Fast switching speed
- **Lead-Free Finish; RoHS compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
## **Description**
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
## **Applications**
- Motor Control
- Transformer Driving Switch
- DC-DC Converters
- Power Management Functions
- **Qualified to AEC-Q101 Standards for High Reliability**
## **Mechanical Data**
- Case: SOT223
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Connections: See diagram below
- Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 © **e3**
- Weight: 0.112 grams (approximate)
- Uninterrupted Power Supply
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SOT223
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Top View
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Pin Out - Top View
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D
G
S
Equivalent Circuit
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## **Ordering Information** (Note 4 & 5)
|**Ordering Informationg Information Information** (Note 4 & 5)|**Ordering Informationg Information Information** (Note 4 & 5)|**Ordering Informationg Information Information** (Note 4 & 5)|**Ordering Informationg Information Information** (Note 4 & 5)|
|---|---|---|---|
|||||
|**Part Number**|**Qualification**|**Case**|**Packaging**|
|DMN6068SE-13|Standard|SOT223|4000 / Tape & Reel|
|DMN6068SEQ-13|Automotive|SOT223|4000 / Tape & Reel|
- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
## **Marking Information**
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YWW
N6068
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> = Manufacturer’s Marking at N6068 = Product Type Marking Code YWW = Date Code Marking Y = Year (ex: 9 = 2009) WW = Week (01 - 53)
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**A Product Line of Diodes Incorporated DMN6068SE** [
**Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
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||||||||||
|---|---|---|---|---|---|---|---|---|
|Pe|Characteristic|Symbol|Value|Unit|
|nn|Drain-Source voltage|VDSS|S(O|60|V|
|nD|Gate-Source voltage|(Note 6)|VGS|20|V|
|Rn|Single Pulsed Avalanche Energy|(Note 11)|EAS|37.5|mJ|
|a|Single Pulsed Avalanche Current|(Note 11)|GN|(nD|IAS|(OO|5.0|A|
|(Note 8)|5.6|
|Continuous Drain current|VGS = 10V|TA = +70°C (Note 8)|ID|4.5|A|
|eee|(Note 7)|4.1|
|Pulsed Drain current|VGS= 10V|(Note 9)|IDM|20.8|A|
|Gs|S(O|
|ts|Continuous Source current (Body diode)|(Note 8)|PR|OS|IS|(OU|4.9|A|
|Cee|Pulsed Source current (Body diode)|(Note 9)|ef|ISM|20.8|A|
**----- End of picture text -----**
**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|2.0|
|(Note 7)|
|Power dissipation|16.0|W|
|Linear derating factor|PD|3.7|mW/°C|
|(Note 8)|
|29.5|
|(Note 7)|62.5|
|Thermal Resistance, Junction to Ambient|RθJA|
|(Note 8)|34|°C/W|
|Thermal Resistance, Junction to Lead|(Note 10)|RθJL|11.5|
|Operating and storage temperature range|TJ, TSTG|-55 to +150|°C|
**----- End of picture text -----**
Notes: 6. AEC-Q101 VGS maximum is 16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition.
8. Same as note (3), except the device is measured at t 10 sec.
9. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD=50V, starting TJ = +25°C.
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LTS.'1n €C OR PORATED
**A Product Line of Diodes Incorporated**
**DMN6068SE**
## **Thermal Characteristics**
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**----- Start of picture text -----**
10 R DS(on) lll 7 ~~ | | | | | TI 2.0 na
PARENT Limited N REE
ae NE ee. NE ee Se 1.6
beeTK ONAL OTK ll NX
1 UNE DC SASSY | 1.2 \
1s
a a | 7INT
PTT TT 100ms Jp ONPn7 TTil 0.8 ‘\
100m
pee Single PulseT amb =25°C a 10ms 1ms 100µs im. Bn 0.4 \ N
10m ae UE TTT ani Bal l 0.0 PU EEE EEE EN \
100m 1 10 0 20 40 60 80 100 120 140 160
VDS Drain-Source Voltage (V) Temperature (°C)
Safe Operating Area Derating Curve
70
a LOL a ae aa an a
T =25°C
60 r amb A KCCI COIL EIC Single Pulse il
T =25°C
ann” amb
50 haa 100 PSU TMNT ll
Ww 7 EINEet
40
D=0.5 aNSeER alTT BinCOTCSSSiaanacinla
30
a Co Con oT
10
20 D=0.2 Single Pulse
ey al Mt PARTETA TSS. IE UTE Ted
a TTT Ae D=0.05 Il ee ee ee ee
10 tT SI 1a CTA Sd
0 eetSteetTO TN D=0.1 TT1 1 AIIM CUI TIM ET CUT GT—
100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Pulse Power Dissipation
Drain Current (A)
ID
Max Power Dissipation (W)
Thermal Resistance (°C/W) Maximum Power (W)
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**DMN6068SE**
**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)
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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Pe|Characteristic|Symbol|ld|Min|Typ|Max|Unit|Test Condition|
|Pee|OFF CHARACTERISTICS|
|Drain-Source Breakdown Voltage|BVDSS|60|||V|ID = 250µA, VGS = 0V|
|Pea|aesesa|a|esesesa(|isd|et|
|Pease|Zero Gate Voltage Drain Current|IDSS|||0.5|µA|VDS = 60V, VGS = 0V|
|Pea|Gate-Source Leakage|aes|aes|ee|IGSS|et|||100|nA|VGS = 20V, VDS = 0V|
|PC|ON CHARACTERISTICS|
|POeeeeeeeeaeesesaee|Gate Threshold Voltage|VGS(th)|1.0||3.0|V|ID = 250µA, VDS= VGS|
|0.068|VGS = 10V, ID = 12A|
|Static Drain-Source On-Resistance (Note 12)|RDS (ON)|||Ω|
|Ce||0.100|OERPr|VGS = 4.5V, ID = 6A|
|nD|Forward Transconductance (Notes 12 & 13)|gfs||19.7||S|VDS = 15V, ID = 12A|
|Diode Forward Voltage (Note 12)|VSD||0.98|1.15|V|IS = 12A, VGS = 0V|
|nD|nn|(S(OI|(RR|nS|IDOO|
|Reverse recovery time (Note 13)|trr|145||ns|
|IS = 12A, di/dt= 100A/µs|
|-—__+_+—}+-+-+ns|Reverse recovery charge (Note 13)|Qrr||929||{||nC|
|DYNAMIC CHARACTERISTICS|(Note 13)|
|Re|Gn|Ge|I|GR|
|nn|Input Capacitance|Ciss||502||pF|
|Output Capacitance|Coss||45.7||pF|VDS = 30V, VGS = 0V|
|Peaaesesa(ai‘i‘“iei‘(‘(‘“leelllrnt|Ue|f= 1MHz|
|nn|Reverse Transfer Capacitance|C|tn|rss|I||GO|27.1|I||pF|
|Paes|Total Gate Charge (Note 14)|aes|ee|Qg||5.55||nC|VGS = 4.5V|
|nS|Total Gate Charge (Note 14)|Qg||10.3||nC|VDS = 30V|
|a|Gate-Source Charge (Note 14)|GnI|Qgs|On||1.6||nC|VGS = 10V|ID = 12A|
|nD|Gate-Drain Charge(Note 14)|I|Qgd||3.5||nC|
|nnn|Turn-On Delay Time (Note 14)|tD(on)||3.6||ns|
|Pea|Turn-On Rise Time (Note 14)|aesesa(ai‘i‘“iei‘(‘(‘“leelllr|tr||10.8||ns|VDD = 30V, VGS= 10V|
|nn|Turn-Off Delay Time (Note 14)|Gn|tD(off)|I||GO|11.9|I||ns|ID = 12A, RG 6.0Ω|
|es|Turn-Off Fall Time (Note 14)|es|tf||es|Gs|8.7|Gs||ns|
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Notes: 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2% 13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
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**A Product Line of Diodes Incorporated**
**DMN6068SE**
## **Typical Characteristics**
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T = 25°C 10V 5V T = 150 ° C 10V
4.5V
10 stne| | 4.5V A 10 FeUU ||ed 4V
4V 3.5V
Ht Sta
1 1
3V
7/7“ eee 3.5V WZ
Peet et ttt eat eee ttet
0.1 co re VGS 0.1 (filial 2.5V
V
GS
3V
2V
0.01 aoe 0.01 penfan
0.1 1 10 0.1 1 10
VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V)
Output Characteristics Output Characteristics
10 VDS = 10V 2.0 V GS = 10V
po aSaree 1.8 > I D = 12A Sf7
1 1.6 R
DS(on)
1.4
T = 150°C
0.1 ———— ee ee ee 1.2 Peeeeee
T = 25 ° C 1.0
V
0.01 0.8 V = V GS(th)
GS DS
0.6 I = 250uA
ee ey A A YT D a,
1E-3 ee) ee) ee eee 0.4 P| |
1 2 3 4 5 -50 0 50 100 150
VGS Gate-Source Voltage (V) Tj Junction Temperature (°C)
Typical Transfer Characteristics Normalised Curves v Temperature
100
3V 3.5V VGS 10
10 PTTYLTTT TT et aa a——a aa a
4V
T = 150°C
1
Pp poff
1 NY 4.5V 5V Ml ——————a T = 25°C
annee eeeeee ee)eeeee (eei 0.1 ee, ee y, ee eee
0.1
a A $f. fj}
10V
T = 25°C Vgs = 0V
0.01 SEEPET TTTat 0.01 Hfa AneffA |
0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0
ID Drain Current (A) VSD Source-Drain Voltage (V)
On-Resistance v Drain Current Source-Drain Diode Forward Voltage
Drain Current (A) Drain Current (A)
ID ID
GS(th)
and V
DS(on)
Drain Current (A)
ID
Normalised R
)
Reverse Drain Current (A)
Drain-Source On-Resistance ( ISD
DS(on)
R
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**A Product Line of Diodes Incorporated** | ZETEX **DMN6068SE** [id
**Typical Characteristics** (cont.)
## rE.
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**----- Start of picture text -----**
10
8
ee eeeFERCFERCae
6 E CEA
Pfr arr
4
a Aa
n/a V = 30V
2 DS
I = 12A
D
0 Zt(A(A
0 2 4 6 8 10
Q - Charge (nC)
Gate-Source Voltage (V)
GS
V
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**----- Start of picture text -----**
10
— V = 0V
600 GS
f = 1MHz 8
eePIT ee eeeFERCFERCae
C
400 PTT ISS 6 E CEA
TI TT Pfr arr
C
OSS
4
SY CRSS
200 cosine aie a Aa
LP n/a V = 30V
2 DS
I = 12A
D
0 |iPST TTT 0 Zt(A(A =
0.1 1 10 0 2 4 6 8 10
VDS - Drain - Source Voltage (V) Q - Charge (nC)
C Capacitance (pF) Gate-Source Voltage (V)
GS
V
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**----- Start of picture text -----**
Capacitance v Drain-Source Voltage
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**Gate-Source Voltage v Gate Charge**
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**----- Start of picture text -----**
20 40
Starting TJ = 25°C
po
15 ine 30
PN
10 20
Ser
ane
5 om |to 10
ee
100µ 1m
L Inductor (H)
Single-Pulsed Avalanche Rating
E
AS
Avalanche Current (A)
IAS
Avalanche Energy (mJ)
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**A Product Line of Diodes Incorporated**
**DMN6068SE**
## **Test Circuits**
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**----- Start of picture text -----**
QG
wo<
VG QGS QGD
| |
Charge
—>
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## **Basic gate charge waveform**
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**----- Start of picture text -----**
VDS
90%
\/ f
|
|
|
|
|
A I
10%
VGS | | K| i| |
le» | td(on) ! «—__ tr >| jt | td(off) 1<—_> tr ||
rr t(on) |<—___—__> t(on) |
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## **Switching time waveforms**
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Current
regulator
| I
| 12V 0 . 2uF 50k Sameas |
| me D.U.T
| |
| aa a
VDS
0 IG
D.U.T
— § I ID
VGS
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## **Gate charge test circuit**
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**----- Start of picture text -----**
RD
VGS VDS
RG VDD
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**Switching time test circuit**
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**A Product Line of Diodes Incorporated DMN6068SE** ~~[|~~
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
**==> picture [427 x 259] intentionally omitted <==**
**----- Start of picture text -----**
D
b1 Q
4 7) oe C
SOT223
Dim Min Max Typ
"4 fC A 1.55 = 1.65 1.60
A1 0.010 0.15 0.05
E E1
b 0.60 0.80 0.70
== b1 2.90 3.10 3.00
Gauge
Plane { ee C 0.20 ee 0.30 ee 0.25 ee
0.25 D 6.45 6.55 + — 6.50
E 3.45 3.55 3.50
Seating L
Plane a | —_--+ E1 6.90 7.10 7.00
e - - 4.60
er e1 b 4 ===
e1 - - 2.30
2 e e e L 0.85 1.05 0.95
0 EERE Q 0.84 0.94 0.89
All Dimensions in mm
A A1 _
|a) [|
7°
0°-10°
7°
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## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
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**----- Start of picture text -----**
— X1
Y1
—
C1
Y2
ma C2 oH
hee
X2
**----- End of picture text -----**
|**Dimensions**|**Value(in mm)**|
|---|---|
|**X1**|3.3|
|**X2**|1.2|
|**Y1**|1.6|
|**Y2**|1.6|
|**C1**|6.4|
|**C2**|2.3|
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## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated **www.diodes.com**
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## Links
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---
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