# Power MOSFET, N Channel, 60 V, 6 A, 0.068 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3127341/)

**URL**: https://novapart.co/products/DMN6068LK3-13/power-mosfet-n-channel-60-v-6-a-0068-ohm-to-252
**SKU**: DMN6068LK3-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1940
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dis

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 4.12W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 0.068ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127341/)

**DMN6068LK3** 

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Green<br>**----- End of picture text -----**<br>


## **60V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## ~~SS~~ **Product Summary Features and Benefits** 

- 100% Unclamped Inductive Switch (UIS) test in production 

- • Low on-resistance 

- Fast switching speed 

|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TA = +25**°**C**|
|---|---|---|
|60V|68mΩ@ VGS= 10V|8.5A|
||100mΩ@ VGS = 4.5V|7.0A|



- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: TO252 

## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0  (Note 1) 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals Connections: See Diagram 

- Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

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• Weight: 0.33 grams (approximate)<br>Applications<br>• Motor Control<br>• Transformer Driving Switch  D<br>D<br>• DC-DC Converters  TO252-3L<br>• Power Management Functions<br>• Uninterrupted Power Supply<br>G<br>D<br>> | &<br>G S S<br>TOP VIEW  PIN OUT -TOP VIEW  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|DMN6068LK3-13|N6068L|13|16|2,500|



- Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. 

## **Marking Information** 

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YYWW<br>N6068L<br>**----- End of picture text -----**<br>


> = Manufacturer’s Marking >: N6068L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 

1 of 8 **www.diodes.com** 

DMN6068LK3 Document Number DS32057 Rev 4 - 2 

May 2013 © Diodes Incorporated 

**DMN6068LK3** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**<br>~~oF~~|||**Symbol**|**Value**<br>~~>~~|**Unit**<br>~~>~~|
|Drain-Source voltage<br>~~oF~~|||VDSS|60<br>~~>~~|V<br>~~>~~|
|Gate-Source voltage<br>~~oF~~<br>~~Ne~~||(Note 5)<br>~~oF~~<br>~~ee~~|VGS|±20<br>~~>~~|V<br>~~>~~|
|Single Pulsed Avalanche Energy<br>~~oF~~<br>~~Ne~~||(Note 11)<br>~~oF~~<br>~~ee~~|EAS|37.5<br>~~>~~|mJ<br>~~>~~|
|Single Pulsed Avalanche Current<br>~~Ne~~<br>~~————=—~~||(Note 11)<br>~~ee~~<br>~~————=—~~|IAS<br>~~————=—~~|5.0<br>~~eee~~|A<br>~~eee~~|
|Continuous Drain current<br>~~Ne~~<br>~~————=—~~|VGS= 10V<br>~~————=—~~|(Note 7)<br>~~ee~~<br>~~————=—~~|ID<br>~~————=—~~|8.5<br>~~eee~~|A<br>~~eee~~|
|||TA = 70°C(Note 7)<br>~~————=—~~||6.8<br>~~eee~~||
|||(Note 6)<br>~~————=—~~||6.0<br>~~eee~~||
|Pulsed Drain current<br>~~————=—~~|VGS= 10V<br>~~————=—~~|(Note 8)<br>~~————=—~~|IDM<br>~~————=—~~|22.2<br>~~eee~~|A<br>~~eee~~|
|Continuous Source current(Bodydiode)<br>~~————=—~~<br>~~ee~~||(Note 7)<br>~~————=—~~<br>~~ee~~|IS<br>~~————=—~~<br>~~ee~~|10.2<br>~~eee~~<br>~~ee~~|A<br>~~eee~~<br>~~ee~~|
|Pulsed Source current(Bodydiode)<br>~~ee~~||(Note 8)<br>~~ee~~|ISM<br>~~ee~~|22.2<br>~~ee~~|A<br>~~ee~~|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power dissipation<br>Linear derating factor|(Note 6)|PD|4.12<br>33|W<br>mW/°C|
||(Note 7)||8.49<br>67.9||
||(Note 9)||2.12<br>16.9||
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|30.3|°C/W|
||(Note7)||14.7||
||(Note 9)||59.0||
|Thermal Resistance, Junction to Lead|(Note 10)|RθJL|3.09||
|Operatingand storage temperature range||TJ,TSTG|-55 to +150|°C|



Notes: 5. AEC-Q101 VGS maximum is ±16V. 

6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

7. Same as note 2, except the device is measured at t ≤ 10 sec. 

8. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs.  The pulse current is limited by the maximum junction temperature. 

9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

10. Thermal resistance from junction to solder-point (at the end of the drain lead). 

11. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25• , VDD = 50V, starting TJ = 25°C 

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DMN6068LK3 Document Number DS32057 Rev 4 - 2 

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**DMN6068LK3** 

## **Thermal Characteristics** 

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R R<br>DS(on) es ee DS(on) Dee TN nne.-\aeen ee<br>10 Limited 10 Limited<br>Ea 2), SU eee ee. XS . G, “GD, NE BE ae 2. Se ee i>. Sb, Se. 4.<br>pf NE NNSA SS il pd ENA<br>DC<br>1 DC 1s 1 1s<br>Tr | Thr 100ms PTISAAR rT | rT hE TTT 100ms | TAT TTA UTA<br>100m T amb =25°C — 10ms1ms [p> 100m T amb =25°C 10ms 1ms<br>25mm x 25mm  50mm x 50mm<br>1oz FR4 =| 100µs ih aaBe 2oz FR4 ——re 100µs<br>| EeeTt ty Se.ne ee74ne LTBe—tT tT — —<br>1 10 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Safe Operating Area Safe Operating Area<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>**----- End of picture text -----**<br>


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35<br>60 a a T amb =25 ° C LUO100 oooa 30 Tya T amb =25°C Loo1/0<br>5040 ZZEL 25mm x 25mm 1oz FR4 aN1VET/T"AM it 25 Laa| 50mm x 50mm  2oz FR4 1ATTmT Nt” Aaad<br>20<br>D=0.5 Cer CUI TL een ARITTI D=0.5 CUM LTTE TT eer Dagar | TTT<br>acl A“ cA<br>30 aTNANYYAge 15 NE”afoul na J 4 A df<br>20 D=0.2 D=0.1 10 D=0.2 CTU Cerri D=0.1 mill<br>aa Hg0<br>sy eR Hil ae ar ON rh<br>100 eenPe=ES TT cteatat rls et IcA NX Ii Single Pulse D=0.05 Uliil iil 50 TT_—tyer nee” ~~“el TNCoil NTTI Single PulseD=0.05 manimii mii<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br> Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Transient Thermal Impedance<br>4.5<br>100 STA| Single Pulse Tamb=25°C 4.03.5 ae ae 50mm x 50mm  2oz FR4<br>NTT 50mm x 50mm  HiIl 3.0 P| UNG i<br>25mm x 25mm<br>SNesatiate mse at 2oz FR4 2.5 7 1oz FR4<br>SAL<br>10 UII i 2.0 PN |<br>TTI IPSEC SNK a<br>1.5<br>ENcore CT CTS ‘SBE 1.0 a ee j\ ee ee<br>25mm x 25mm<br>|| 1oz FR4 HE TS 0.5 rt—QO<br>1 0.0 AN—<br>100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160<br>Pulse Width (s)  Temperature (°C)<br>Pulse Power Dissipation Derating Curve<br> Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br> Max Power Dissipation (W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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DMN6068LK3 Document Number DS32057 Rev 4 - 2 

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**DMN6068LK3** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**||
|**OFF CHARACTERISTICS**<br>~~DyI~~<br>~~I(I~~<br>~~I~~||||||||
|Drain-Source Breakdown Voltage<br>~~ry~~|BVDSS<br>~~ry~~<br>~~Dy~~<br>~~I~~|60<br>~~ry~~<br>~~I~~<br>~~I~~|<br>~~ry~~<br>~~I~~<br>~~UD~~|<br>~~ry~~<br>~~(I~~<br>~~(I~~|V<br>~~ry~~<br>~~I~~<br>~~(OO~~|ID= 250µA, VGS= 0V<br>~~ry~~<br>~~(OO~~||
|Zero Gate Voltage Drain Current<br>~~nD~~|IDSS<br>~~Dy ~~<br>~~nD~~<br>~~I~~<br>~~PD~~|<br> ~~I~~<br>~~nD~~<br>~~I~~<br>~~I~~|<br>~~I ~~<br>~~nD~~<br>~~UD~~<br>~~(OU~~|0.5<br> ~~(I~~<br>~~nD~~<br>~~(I~~<br>~~(OU~~|µA<br>~~I~~<br>~~nD~~<br>~~(OO~~<br>~~(OU~~|VDS= 60V, VGS= 0V<br>~~nD~~<br>~~(OO~~<br>~~(OO~~||
|Gate-Source Leakage<br>~~nD~~|IGSS<br>~~I~~<br>~~nD~~<br>~~PD~~|<br>~~I ~~<br>~~nD~~<br>~~I~~|<br> ~~UD~~<br>~~nD~~<br>~~(OU~~|±100<br>~~(I~~<br>~~nD~~<br>~~(OU~~|nA<br>~~(OO ~~<br>~~nD~~<br>~~(OU~~|VGS=±20V, VDS= 0V<br> ~~(OO~~<br>~~nD~~<br>~~(OO~~||
|**ON CHARACTERISTICS**<br>~~PD I~~<br>~~(OU (OO~~<br>~~yD(RO(OO~~||||||||
|Gate Threshold Voltage<br>~~nn~~|VGS(th)<br>~~nn~~<br>~~yD~~<br>~~ee~~|1.0<br>~~nn~~<br>~~yD~~<br>~~ee~~|<br>~~nn~~<br>~~(RO~~<br>~~ee~~|3.0<br>~~nn~~<br>~~(RO~~<br>~~ee~~|V<br>~~nn~~<br>~~(RO~~<br>~~ee~~|ID= 250µA, VDS= VGS<br>~~nn~~<br>~~(OO~~<br>~~eee~~||
|Static Drain-Source On-Resistance (Note 12)<br>~~ee~~|RDS (ON)<br>~~yD~~<br>~~ee~~<br>~~ee~~<br>~~PD~~|<br>~~yD ~~<br>~~ee~~<br>~~ee~~<br>~~PD~~|<br> ~~(RO~~<br>~~ee~~<br>~~ee~~<br>~~(UO~~|0.068<br>~~(RO~~<br>~~ee~~<br>~~ee~~|Ω<br>~~(RO ~~<br>~~ee~~<br>~~ee~~<br>~~(UO~~|VGS= 10V, ID= 12A<br> ~~(OO~~<br>~~ee~~<br>~~eee~~||
|||||0.100<br>~~ee~~<br>~~ee~~<br>~~(UO~~||VGS= 4.5V, ID= 6A<br>~~ee~~<br>~~eee~~<br>~~(OO~~||
|Forward Transconductance (Notes 12 & 13)<br>~~nD~~|gfs<br>~~ee~~<br>~~nD~~<br>~~PD~~|<br>~~ee~~<br>~~nD~~<br>~~PD~~|19.7<br>~~ee~~<br>~~nD~~<br>~~(UO~~|<br>~~ee~~<br>~~nD~~<br>~~(UO~~|S<br>~~ee~~<br>~~nD~~<br>~~(UO~~|VDS= 15V, ID= 12A<br>~~eee~~<br>~~nD~~<br>~~(OO~~||
|Diode Forward Voltage (Note 12)|VSD<br>~~PD~~<br>~~GD~~|<br>~~PD~~|0.98<br>~~(UO~~|1.15<br>~~(UO~~|V<br>~~(UO ~~|IS= 12A, VGS= 0V<br> ~~(OO~~||
|Reverse recoverytime (Note 13)<br>~~nn~~|trr<br>~~nn~~<br>~~GD~~|~~nn~~|145<br>~~nn~~|<br>~~nn~~|ns<br>~~nn~~|IS= 12A, di/dt= 100A/µs||
|Reverse recoverycharge (Note 13)<br>~~SN~~|Qrr<br>~~GD~~<br>~~SN~~|<br>~~SN~~|929<br>~~SN~~|<br>~~SN~~|nC|||
|**DYNAMIC CHARACTERISTICS(Note 13)**<br>~~eeeeeeeeeeee~~||||||||
|Input Capacitance<br>~~rn~~<br>~~ee~~|Ciss<br>~~rn~~<br>~~ee~~|<br>~~rn~~<br>~~ee~~|502<br>~~rn~~<br>~~ee~~|<br>~~rn~~<br>~~ee~~|pF<br>~~rn~~<br>~~ee~~|VDS= 30V, VGS= 0V<br>f= 1MHz||
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|45.7<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~<br>~~ns I~~|27.1<br>~~ee~~<br>~~I~~|<br>~~ee~~<br>~~I~~|pF<br>~~ee~~|||
|Total Gate Charge<br>~~ee ~~<br>~~Pt~~|Qg<br> ~~ee ~~<br>~~Pt~~|<br> ~~ee ~~<br>~~Pt~~<br>~~ns I~~|5.55<br> ~~ee ~~<br>~~Pt~~<br>~~I~~|<br> ~~ee ~~<br>~~Pt~~<br>~~I~~|nC<br> ~~ee~~<br>~~Pt~~|VGS= 4.5V<br>~~Pt~~|VDS= 30V<br>ID= 12A|
|Total Gate Charge|Qg<br>~~GD~~|<br>~~ns I~~|10.3<br>~~I~~|<br>~~I~~|nC|VGS= 10V||
|Gate-Source Charge<br>~~nn~~|Qgs<br>~~nn~~<br>~~GD~~<br>~~s~~|<br>~~nn~~|1.6<br>~~nn~~|<br>~~nn~~|nC<br>~~nn~~|||
|Gate-Drain Charge<br>~~rn~~|Qgd<br>~~GD~~<br>~~rn~~<br>~~s~~<br>~~Gd~~|<br>~~rn~~|3.5<br>~~rn~~|<br>~~rn~~|nC<br>~~rn~~|||
|Turn-On DelayTime (Note 14)<br>~~nn~~|tD(on)<br>~~s~~<br>~~nn~~<br>~~Gd~~<br>~~s~~|<br>~~nn~~|3.6<br>~~nn~~|<br>~~nn~~|ns<br>~~nn~~|VDD= 30V, VGS= 10V<br>ID= 12A, RG≅6.0Ω||
|Turn-On Rise Time (Note 14)<br>~~rn~~|tr<br>~~Gd~~<br>~~rn~~<br>~~s~~|<br>~~rn~~|10.8<br>~~rn~~|<br>~~rn~~|ns<br>~~rn~~|||
|Turn-Off Delay Time (Note 14)<br>~~ee~~|tD(off)<br>~~s~~<br>~~ee~~<br>~~ey~~|<br>~~ee~~<br>~~e~~|11.9<br>~~ee~~<br>~~Gs~~|<br>~~ee~~<br>~~GE~~|ns<br>~~ee~~|||
|Turn-Off Fall Time(Note 14)<br>~~re~~|tf<br>~~re~~<br>~~ey~~|<br>~~re~~~~**s**~~<br>~~e~~|8.7<br>~~**s**~~<br>~~Gs~~|<br>~~**s**~~<br>~~GE~~|ns<br>~~**s**~~|||



Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2% 

13. For design aid only, not subject to production testing. 

14. Switching characteristics are independent of operating junction temperatures. 

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DMN6068LK3 Document Number DS32057 Rev 4 - 2 

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**DMN6068LK3** 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
T = 25°C Cera 10V ee 5V I Pe T = 150°C andi 10V anil 4.5V<br>10 UI | | 4.5V 10 TT | TTee 4V<br>4V 3.5V<br>Hi a<br>1 1<br>3V<br>3.5V<br>0 ee eae 1 Za<br>Pe 8<br>0.1 ce V GS 0.1 ee 2.5V<br>V<br>GS<br>|_| a 3V 2V<br>0.01 Donn 1 0.01 PT<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>10 VDS = 10V cr | re 2.0 | VGS = 10V a,<br>Pa 1.8 I D  = 12A 7<br>1 1.6 R<br>DS(on)<br>1.4<br>T = 150°C<br>0.1 po ff 1.2 ——— a<br>1.0<br>T = 25°C<br>V<br>0.01 po ff 0.8 ee V = V ee GS(th)<br>GS DS<br>ee yA 0.6 PT I D  = 250uA —,<br>1E-3 ee) A) 0.4 a 4<br>1 2 3 4 5 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>100<br>3V 3.5V VGS 10<br>PT ee in ee<br>10 YL aa A<br>4V<br>T = 150°C<br>1<br>SS poff<br>1 a 4.5V 5V Ml J ____ff T = 25°C<br>SS ee ——<br>ee eee | iei 0.1 ae, olyf | |<br>0.1 AY a ff<br>10V<br>T = 25°C Vgs = 0V<br>0.01 SSPOA Ci 0.01 Hfa A fea |<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>ID  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br>)Ω<br>  Reverse Drain Current (A)<br> Drain-Source On-Resistance ( ISD<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**DMN6068LK3** Co 

**Typical Characteristics - continued** 

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10<br>——— V  = 0V<br>600 GS<br>f = 1MHz 8<br>aPI opt eea<br>C<br>400 PTT ISS 6 a<br>C<br>OSS<br>TIE AMIE LT 4 Seeeee? 4aE8<br>SY LIE CRSS CTT a<br>200<br>LP TT oe V  = 30V<br>2 DS<br>I  = 12A<br>D<br>0 |aPRTa.TTT 0 7(A<br>0.1 1 10 0 2 4 6 8 10<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)   Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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20 40<br>Starting TJ = 25°C<br>ee<br>15 nN |LE 30<br>Ne<br>10 20<br>TISNe<br>ane<br>5 eet 10<br>FTTTT<br>100µ 1m<br>L Inductor (H)<br>Single-Pulsed Avalanche Rating<br>E<br>AS<br> Avalanche Current (A)<br>IAS<br> Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


6 of 8 **www.diodes.com** 

DMN6068LK3 Document Number DS32057 Rev 4 - 2 

May 2013 © Diodes Incorporated 

**DMN6068LK3** 

## **Test Circuits** 

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Q G<br>V G Q GS Q GD<br>| <> | <+\_\{__—————_><br>Charge<br>SS EEE EEE<br>**----- End of picture text -----**<br>


**==> picture [158 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current<br>regulator<br>12V 50k Same as<br>D.U.T<br>V DS<br>Bessceeereessneeeeeesneres®esaseee IG esssanferenttnneeenettneed<br>D.U.T<br>ID<br>V GS<br>**----- End of picture text -----**<br>


## **Basic gate charge waveform** 

## **Gate charge test circuit** 

**==> picture [195 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
V DS<br>90%<br>10%<br>V GS i<9!<—_ td(on) tr | i<—!<—_> t d(off) tr<br>t(on) t(on)<br>**----- End of picture text -----**<br>


**==> picture [153 x 45] intentionally omitted <==**

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R D<br>V GS V DS<br>R G VDD<br>**----- End of picture text -----**<br>


## **Switching time waveforms** 

## **Switching time test circuit** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

~~Po~~ **TO252** ~~E > a~~ **Dim Min Max Typ** A ~~ee~~ **A** 2.19 2.39 2.29 ~~< b3 > <>~~ c2 ~~a ee ee ee ; ut . a~~ **A1** 0.00 0.13 0.08 L3 **A2** 0.97 1.17 1.07 ~~jd~~ | ~~ee ee ee~~ am) E1 i ~~aa~~ **b2 b** 0.64 0 ~~ee~~ .76 0.88 0.783 1.14 ~~ee~~ 0 ~~eee~~ .95 D A2 ~~i a I eal a~~ **b3 c2** 50 ~~ee~~ .21 .45 50 ~~ee~~ .4.586 05..53331 H ~~v a~~ **D** 6 ~~ee~~ .00 6 ~~ee~~ .20 6.10 ~~a~~ **D1** 5.21 − − **e** − − 2.286 ~~I v~~ L4 A1 **E** 6.45 6.70 6.58 ~~A~~ P ~~a A ee~~ **E1** 4.32 ~~ee~~ − − L **H** 9.40 10.41 9.91 ~~t t~~ ~~**a** ee ee~~ 2X b2 ~~“<~~ e ~~>4~~ 3X b an a ~~aa~~ **L3 L4 L** 0.88 0.64 1.40 ~~ee~~ 1.27 1.02 1.78 ~~ee~~ 1.08 0.83 1.59 ~~a~~ **a** 0° 10° − **All Dimensions in mm** ~~PE ee~~ 

7 of 8 **www.diodes.com** 

DMN6068LK3 Document Number DS32057 Rev 4 - 2 

May 2013 © Diodes Incorporated 

**DMN6068LK3** 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [323 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
X2<br>Dimensions  Value (in mm)<br>a =| Z  11.6<br>Y2 X1  1.5<br>X2  7.0<br>i L fl C [Z] Y1  2.5<br>Y2  7.0<br>Y1 C  6.9<br>E1  2.3<br>>| ks<br>8 X1 BI E1 ==<br>**----- End of picture text -----**<br>


## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

**www.diodes.com** 

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DMN6068LK3 Document Number DS32057 Rev 4 - 2 

May 2013 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN6068LK3-13/power-mosfet-n-channel-60-v-6-a-0068-ohm-to-252)
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- [Supplier page](https://es.farnell.com/diodes-inc/dmn6068lk3-13/mosfet-n-ch-60v-6a-to252/dp/3127341)
---

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