# Power MOSFET, N Channel, 60 V, 5 A, 0.048 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943645RL/)

**URL**: https://novapart.co/products/DMN6066SSS-13/power-mosfet-n-channel-60-v-5-a-0048-ohm-soic
**SKU**: DMN6066SSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2500
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.56W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.048ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943645RL/)

**DMN6066SSS** 

**60V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TA = +25°C**|
|---|---|---|
|60V|66mΩ@ VGS= 10V|5.0A|
||97mΩ@ VGS = 4.5V|4.1A|



## **Features and Benefits** 

- Low on-resistance 

- Fast switching speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- • **Halogen and Antimony Free. “Green” Device (Note 3)** • **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Motor Control 

- Backlighting 

- DC-DC Converters 

- Power Management Functions 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See Diagram Below 

- Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.074 grams (Approximate) 

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## **Ordering Information** (Notes 4 & 5) 

|**Ordering Informationg Information Information** (Notes 4 & 5)|(Notes 4 & 5)|||
|---|---|---|---|
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|DMN6066SSS-13|Commercial|SO-8|2,500/Tape &Reel|
|DMN6066SSSQ-13|Automotive|SO-8|2,500/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

SO-8 

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N6066SS<br>YY WW<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking N6066SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 

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**DMN6066SSS** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage<br>~~——~~|||VDSS<br>|60<br>|V<br>|
|Gate-Source Voltage<br>~~——~~||(Note 6)<br>|VGS<br>|±20<br>|V<br>|
|Single Pulsed Avalanche Energy<br>~~——~~||(Note 11)<br>|EAS<br>|37.5<br>|mJ<br>|
|Single Pulsed Avalanche Current<br>~~——~~||(Note 11)<br>|IAS<br>|5.0<br>|A<br>|
|Continuous Drain Current<br>~~|~~|VGS= 10V<br>~~|~~|(Note 8)<br>~~|~~|ID<br>~~|~~|5.0<br>~~|~~|A<br>~~|~~|
|||TA= +70°C(Note 8)<br>~~|~~||4.0<br>~~|~~||
|||(Note 7)<br>~~|~~||3.7<br>~~|~~||
|Pulsed Drain Current<br>~~|~~|VGS= 10V<br>~~|~~|(Note 9)<br>~~|~~|IDM<br>~~|~~|23<br>~~|~~|A<br>~~|~~|
|Continuous Source Current(Bodydiode)<br>~~ee~~||(Note 8)<br>~~ee~~|IS<br>~~ee~~|4.0<br>~~ee~~|A<br>~~ee~~|
|Pulsed Source Current(Bodydiode)<br>~~ee~~||(Note 9)<br>~~ee~~|ISM<br>~~ee~~|23<br>~~ee~~|A<br>~~ee~~|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 7)|PD|1.56<br>12.5|W<br>mW/°C|
||(Note 8)||2.81<br>22.5||
|Thermal Resistance, Junction to Ambient|(Note7)|RθJA|80.0|°C/W|
||(Note 8)||44.5||
|Thermal Resistance,Junction to Lead|(Note 10)|RθJL|37.0||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to 150|°C|



Notes: 6. AEC-Q101 VGS maximum is ±16V. 

7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

8. Same as note (7), except the device is measured at t ≤ 10 sec. 

9. Same as note (7), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 

11. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD=50V, starting TJ = +25°C. 

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**DMN6066SSS** 

## **Thermal Characteristics** 

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SS SS SS 1.6 a<br>R  Limited<br>10 | DS(on) Uea SE 1.4 P™EeeNEeTt ee 25mm x 25mm<br>ee SSNS SOS 1.2 \ 1oz FR4<br>1 pa RA ESA PN FS pt tT | | IN<br>1.0<br>_—zz DC aeeee ee 2 ee, “Se IN<br>100m TS 1s  I 0.8 Pt | tT | dT PrP AP TE TT<br>== === 100ms a= SF 0.6 Pt tT tT Pe et PP INE Pe<br>10m ee 10ms Bays se Pt tT tT Tt te tt TIN TT TT YT<br>SS: eee 0.4 See eee Nee<br>Single Pulse —— 1ms —— nT See eNeeee<br>1m ——aPE T amb =25°C IT=== -- 100µs meni= 0.20.0 PtPtPoettTtT tTtTtT PePeet [AT][NT] et tT TT IN TTTTTT<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>80 TT nL Too<br>T =25°C<br>70 HH amb HE PASTA CH TTT Single Pulse it<br>60 mulCOa ccaAea 100 NEEER n ‘eg TTA TTT TT Tamb=25°C Ill<br>50 CEH rHEYrete| SSSHtt|Set Seat eect me eeeste<br>D=0.5 | a<br>40<br>en EN BD |,<br>a et es<br>30 7 10 a et eee<br>20 _||i D=0.2 CTCietLDTT TAys,YZie | ||| Single Pulse llil paintCCSN| ai ah}TTIIN<br>so eee D=0.05 lS<br>10 | oll Ht | TM TTT CTI TTS TTT<br>0 mSSernieseee=?7 i D=0.1 1 1 ET VI UT TMT I Tm Ts<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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**DMN6066SSS** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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||||||||||
|---|---|---|---|---|---|---|---|---|
|GC|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|Pe|OFF CHARACTERISTICS|
|Drain-Source Breakdown Voltage|BVDSS|60|||V|ID = 250µA, VGS = 0V|
|GG|Zero Gate Voltage Drain Current|IDSS|||0.5|µA|VDS = 60V, VGS = 0V|
|Gate-Source Leakage|IGSS|||±100|nA|VGS = ±20V, VDS = 0V|
|en|ON CHARACTERISTICS|
|GGG|Gate Threshold Voltage|VGS(th)|1.0||3.0|V|ID = 250µA, VDS = VGS|
|0.048|0.066|VGS = 10V, ID = 4.5A|
|Static Drain-Source On-Resistance (Note 12)|RDS (ON)||Ω|
|ee|0.068|0.097|VGS = 4.5V, ID = 3.5A|
|GGG|Forward Transconductance (Notes 12 & 13)|gfs||19.2||S|VDS = 15V, ID = 6A|
|GG|Diode Forward VoltaReverse Recovery Time (Note 13) ge (Note 12)|VtSDrr||0.89 23|1.15 |ns V|GO|IS = 4.5A, VGS = 0V|
|ee|Reverse Recovery Charge (Note 13)|Qrr||19.7||nC|IS = 2.4A, di/dt = 100A/µs|
|DYNAMIC CHARACTERISTICS (Note 13)|
|a|Input Capacitance|Ciss||502||pF|
|Output Capacitance|Coss||45.7||pF|VDS = 30V, VGS = 0V|
|f = 1MHz|
|Reverse Transfer Capacitance|Crss||27.1||pF|
|————|ee|oe ee|ee|
|OO|Total Gate Charge (Note 14)|Qg||5.4||nC|VGS = 4.5V|
|Total Gate Charge (Note 14)|Qg||10.3||nC|VDS = 30V|
|Gate-Source Charge (Note 14)|Qgs||1.7||nC|VGS = 10V|ID = 4.5A|
|a|Gate-Drain Charge (Note 14)|Qgd||3.2||nC|
|—|Turn-On Delay Time (Note 14)|tD(on)||2.7||ns|
|a|Turn-On Rise Time (Note 14)|tr||2.4||ns|VDD = 30V, VGS = 10V|
|a|Turn-Off Delay Time (Note 14)|tD(off)||14.7||ns|ID = 1A, RG ≅ 6.0Ω|
|es|Turn-Off Fall Time (Note 14)|tf||5.4|eee||ns|
|ee|

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Notes: 12.   Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. 13.   For design aid only, not subject to production testing. 

14.   Switching characteristics are independent of operating junction temperatures. 

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**DMN6066SSS** 

## **Typical Characteristics** 

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T = 25°C 10V T = 150°C 10V<br>4.5V 4.5V<br>10 Fu tries4 a 10 pSSe HE 4V<br>4V<br>3.5V<br>Hee 3.5V A<br>1 1<br>3V<br>Zr ee |<br>Pt eet tt eat tttet<br>2.5V<br>0.1 3V 0.1 (fifinee<br>V<br>GS<br>V<br>GS 2V<br>0.01 einesa 0.01 peees<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>10 VDS = 10V 2.0 VGS = 10V<br>Po SSS| |r75 1.8 |T_T I D  = 12A LC7<br>1 1.6 R<br>DS(on)<br>=S==—=FFf 1.4<br>T = 150°C SS<br>0.1 1.2<br>T = 25 ° C 1.0<br>V<br>0.01 0.8 V  = V GS(th)<br>GS DS<br>ff — ss 0.6 i I D  = 250uA ——_,<br>1E-3 re) Ae) ee 0.4 PT Pd<br>1 2 3 4 5 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>100<br>3V V GS 10<br>aeee im {_ee<br>10 | 3.5V —————a —a<br>eeeee T = 150°C<br>1<br>Smet 2 eee ee<br>1 ee cetoemaniitiy smart 4V meail pna ffoe T = 25°C<br>4.5V 0.1<br>0.1 Seat ee a Het ey ryA<br>A ee eeeeee<br>10V<br>0.01 Se T = 25°C SoCoon oo 0.01 Apf fe Vgs = 0V _<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>ID  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br>)<br>Ω<br>  Reverse Drain Current (A)<br> Drain-Source On-Resistance ( ISD<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**DMN6066SSS** 

**Typical Characteristics** (continued) 

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10<br>V  = 0V<br>600 GS<br>f = 1MHz 8<br>Saaeo)ee FEEa<br>C<br>400 ee ISS 6 ae<br>Pt TTT tT<br>RRR RYO<br>C<br>RT OSS ee<br>4<br>C<br>RSS<br>200 — 7 FREEZE<br>| re | 7ene V  = 30V<br>2 DS<br>I  = 4.5A<br>D<br>Cras) = GAR<br>i oitt 7<br>0 Pi 0 AR<br>0.1 1 10 0 2 4 6 8 10<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)   Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**DMN6066SSS** 

**Test Circuits** 

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Current<br>regulator<br>QG<br>| lj --- --------- - ------<br>| 12V 0 .2uF 50k Sameas |<br>D.U.T<br>VG => QGS [|] | +t QGD _ | ! eS |<br>VDS<br>®O IG<br>D.U.T<br>nn? {} g I ID<br>VGS<br>Charge<br>——r 7<br>Basic gate charge waveform Gate charge test circuit<br>VDS<br>90% RDD<br>N\/ f<br>VGSGS VDSDS<br>RGG<br>A<br>10%VGS | l Ns| || u Pulse width < 1S<br>|<»! | td(on) <«—_ tr  > | | + td(off) |< tr Duty factor 0 . 1%<br>|<br>er t(on) ns t(on)<br>**----- End of picture text -----**<br>


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RDD<br>VGSGS VDSDS<br>RGG VDD<br>**----- End of picture text -----**<br>


## **Switching time waveforms** 

## **Switching time test circuit** 

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DMN6066SSS Document Number DS33047 Rev. 3 - 2 

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**DMN6066SSS** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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SO-8<br>Dim Min Max<br>A -  1.75<br>E1 E<br>Gauge Plane A1 0.10  0.20<br>A1 Seating Plane A2 1.30  1.50<br>L<br>A3 0.15  0.25<br>Detail ‘A’ b 0.3 0.5<br>D 4.85 4.95<br>h 7°~9° E 5.90 6.10<br>45° E1 3.85 3.95<br>Detail ‘A’ e 1.27 Typ<br>A2 A A3 h -  0.35<br>L 0.62  0.82<br>e b Θ 0°  8°<br>D All Dimensions in mm<br>0.254<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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X<br>Dimensions Value (in mm)<br>X 0.60<br>Wea Y 1.55<br>C1<br>C1 5.4<br>C2 1.27<br>C2<br>Y<br>M [OGE] W “<br>**----- End of picture text -----**<br>


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**DMN6066SSS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A. Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated 

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---

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