# Power MOSFET, N Channel, 60 V, 5.3 A, 0.03 ohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3680133RL/)

**URL**: https://novapart.co/products/DMN6040SFDE-7/power-mosfet-n-channel-60-v-53-a-003-ohm-u-dfn2020
**SKU**: DMN6040SFDE-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1720
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2.03W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.3A |
| Drain Source On State Resistance | 0.03ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3680133RL/)

**DMN6040SFDE** [sd 

**60V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

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**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|V(BR)DSS|RDS(ON) max|Package|TA = +25°C ID max|
|38mΩ @ VGS = 10V|U-DFN2020-6|6.5A|
|60V|
|47mΩ @ VGS = 4.5V|Type E|5.2A|

**----- End of picture text -----**<br>


## **Features and Benefits** 

- 100% Unclamped Inductive Switch (UIS) test in production 

- 0.6mm profile – ideal for low profile  applications 2 

- • PCB footprint of 4mm 

- Low On-Resistance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. "Green" Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

- Case: U-DFN2020-6 Type E 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

## **Applications** 

- Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

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**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|•|General Purpose Interfacing Switch|
|•|Power Management Functions|•|Weight: 0.0065 grams (approximate)|
|Drain|
|U-DFN2020-6 Type E|
|Pin1|
|Gate|
|Source|
|eH‘oo|!|
|Bottom View|Pin Out|Equivalent Circuit|
|Bottom View|
|Ordering Informationg Information Information|(Note 4)|
|Part Number|Marking|Reel size|(inches)|Quantity|per reel|
|DMN6040SFDE-7|N8|7|3,000|
|DMN6040SFDE-13|N8|13|10,000|

**----- End of picture text -----**<br>


## **Ordering Informationg Information Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

N8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 

Date Code Key **Year 2011 2012 2013 2014 2015 2016 2017** ~~——————————~~ **Code** Y Z A B C D E **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~_——————————~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 

1 of 6 **www.diodes.com** 

DMN6040SFDE Datasheet number: DS35792 Rev. 8 - 2 

August 2012 © Diodes Incorporated 

**DMN6040SFDE** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol **|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|5.3<br>4.1|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|6.5<br>5.1|A|
|Pulsed Drain Current(10µspulse,dutycycle = 1%)|||IDM|30|A|
|Maximum BodyDiode Continuous Current|||IS|2.5|A|
|Avalanche Current(Note 7)L = 0.1mH|||IAR|14.2|A|
|Avalanche Energy (Note 7)L = 0.1mH|||EAR|10|mJ|



## **Thermal Characteristics** 

|**Characteristic**|**Characteristic**|**Symbol**|**Value**|**Units**|
|---|---|---|---|---|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.66|W|
||TA= +70°C||0.42||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady state|RθJA|189|°C/W|
||t<10s||132||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.03|W|
||TA= +70°C||1.31||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady state|RθJA|61|°C/W|
||t<10s||43||
|Thermal Resistance,Junction to Case(Note 6)||RθJC|9.3||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFFCHARACTERISTICS (Note 8)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|60|⎯|⎯|V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|⎯|⎯|100|nA|VDS= 60V,VGS= 0V|
|Gate-Source Leakage|IGSS|⎯|⎯|±100|nA|VGS=±20V,VDS= 0V|
|**ON CHARACTERISTICS (Note 8)**|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1<br>~~ee~~|⎯<br>~~ee~~|3<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250µA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS (ON)<br>~~ee~~|⎯<br>~~ee~~|30<br>~~ee~~|38<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 4.3A<br>~~ee~~|
|||⎯<br>~~ee~~|35<br>~~ee~~|47<br>~~ee~~||VGS= 4.5V,ID= 4A<br>~~ee~~|
|Forward Transfer Admittance<br>~~ee~~||Yfs|<br>~~ee~~|⎯<br>~~ee~~|4.5<br>~~ee~~|⎯<br>~~ee~~|S<br>~~ee~~|VDS= 10V,ID= 4.3A<br>~~ee~~|
|Diode Forward Voltage|VSD|⎯|0.7|1.2|V|VGS= 0V,IS= 1A|
|**DYNAMIC CHARACTERISTICS (Note 9)**<br>~~ee~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|⎯<br>~~———~~|1287<br>~~———~~<br>~~ee~~|⎯<br>~~———~~<br>~~ee~~|pF<br>~~———~~<br>~~ee~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|⎯<br>~~———~~|57<br>~~———~~<br>~~ee~~|⎯<br>~~———~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|⎯<br>~~———~~|44<br>~~———~~<br>~~ee~~|⎯<br>~~———~~<br>~~ee~~|||
|Gate Resistance<br>~~———~~|RG<br>~~———~~|⎯<br>~~———~~|1.2<br>~~———~~<br>~~ee~~<br>~~oe~~|⎯<br>~~———~~<br>~~ee~~<br>~~oe~~|Ω<br>~~———~~<br>~~ee~~<br>~~oe~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~———~~|Qg<br>~~———~~|⎯<br>~~———~~|22.4<br>~~ee~~<br>~~———~~<br>~~oe~~|⎯<br>~~ee~~<br>~~———~~<br>~~oe~~|nC<br>~~ee~~<br>~~———~~<br>~~oe~~|VDS= 30V, ID= 4.3A<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~|Qg<br>~~———~~|⎯<br>~~———~~|10.4<br>~~———~~<br>~~oe~~|⎯<br>~~———~~<br>~~oe~~|||
|Gate-Source Charge<br>~~———~~|Qgs<br>~~———~~|⎯<br>~~———~~|4.9<br>~~———~~<br>~~oe~~|⎯<br>~~———~~<br>~~oe~~|||
|Gate-Drain Charge<br>~~———~~|Qgd<br>~~———~~|⎯<br>~~———~~|3.0<br>~~———~~<br>~~oe~~|⎯<br>~~———~~<br>~~oe~~|||
|Turn-On DelayTime<br>~~———~~<br>~~SS~~|tD(on)<br>~~———~~<br>~~SS~~|⎯<br>~~———~~<br>~~SS~~|6.6<br>~~———~~<br>~~oe~~<br>~~SS~~|⎯<br>~~———~~<br>~~oe~~<br>~~SS~~|nS<br>~~———~~<br>~~oe~~<br>~~SS~~|VGS= 10V, VDD= 30V, RG= 6Ω,<br>ID= 4.3A<br>~~———~~<br>~~ee~~<br>~~SS~~|
|Turn-On Rise Time<br>~~SS~~|tr<br>~~SS~~|⎯<br>~~SS~~|8.1<br>~~oe~~<br>~~SS~~|⎯<br>~~oe~~<br>~~SS~~|||
|Turn-Off DelayTime<br>~~SS~~|tD(off)<br>~~SS~~|⎯<br>~~SS~~|20.1<br>~~SS~~|⎯<br>~~SS~~|||
|Turn-Off Fall Time<br>~~SS~~|tf<br>~~SS~~|⎯<br>~~SS~~|4.0<br>~~SS~~|⎯<br>~~SS~~|||
|BodyDiode Reverse RecoveryTime<br>~~SS~~|trr<br>~~SS~~|⎯<br>~~SS~~|18<br>~~SS~~|⎯<br>~~SS~~|nS<br>~~SS~~|IS= 4.3A,dI/dt = 100A/μs<br>~~SS~~|
|BodyDiode Reverse RecoveryCharge|Qrr|⎯|11.9|⎯|nC|IS= 4.3A,dI/dt = 100A/μs|



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

2 of 6 **www.diodes.com** 

DMN6040SFDE Datasheet number: DS35792 Rev. 8 - 2 

August 2012 © Diodes Incorporated 

**DMN6040SFDE** [ 

**==> picture [481 x 675] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 20<br>V DS = 5.0V<br>16 a77 Veg = 10V 16 Sgeeaer oo<br>12 a7Yea ae 12 SeenSeenSeeeen |enenee<br>8 Yr 8 Seeeee inne<br>TA = 150°C<br>| | A Senne, ian<br>4 | 4 See) TA = 125°C TA = 85 ° C sae<br>T A = 25°C<br>a Seen) sae<br>TA = -55°C<br>0 poe 0 Oo<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristics<br>0.10 0.10<br>0.09 COCO EELEEEE<br>0.08 0.08<br>PEER TELE<br>0.07<br>SIT<br>0.06 0.06<br>0.05 ID = 3.5A ID = 4.5A<br>0.04 EERE) V GS = 4.5V 0.04 CRT<br>CEEPEE .<br>0.03<br>VGS = 10V<br>0.02 _— 0.02 See<br>0.01 Pett Sani<br>0 EEE EEE 0 ALEEELEL ELE<br>0 4 8 12 16 20 0 1 2 3 4 5 6 7 8 9 10<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 Typical On-Resistance  vs.<br>Drain Current and Gate Voltage  Drain Current and Gate Voltage<br>0.10 2.4<br>0.09 V GS = 4.5V P| f ff ff 2.2 | | | [| | | | fl<br>2.0 V GS   10= V<br>0.08 T A  = 150°C ID = 10A<br>eee 1.8 EEE<br>0.07 Saasees)oe<br>1.6<br>0.06 aE TA = 125 ° C 1.4 SSA VGS = 4.5V<br>0.05 SE TA = 85°C te 1.2 Aa I D = 5A<br>0.04 1.0<br>POOP a<br>0.03 TA = 25°C 0.8<br>ee eer<br>0.6<br>0.02 T A  = -55°C 0.4<br>eS EE<br>0.01 0.2<br>0 FECE EE 0 FtSEES | | f | ft<br>0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 Typical On-Resistance vs.  Fig. 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I  I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


3 of 6 

DMN6040SFDE 

August 2012 © Diodes Incorporated 

**www.diodes.com** 

Datasheet number: DS35792 Rev. 8 - 2 

**DMN6040SFDE** [| 

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**----- Start of picture text -----**<br>
0.10<br>0.08<br>0.06 aaa V GS = 4.5V By<br>ID = 500mA<br><P Lo7 |<br>0.04<br>VGS  2.5= V<br>ID = 200mA<br>0.02<br>ee<br>0<br>- 50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 7 On-Resistance Variation with Temperature<br>20 ft | | ft<br>16 ft | ft te<br>12 ry TA = 25 ° C po<br>8 |<br>a | | ff ty<br>4<br>ft ft | Fe<br>| | | ff<br>0<br>0 tf 0.2 0.4 | 0.6 TAT 0.8 ff 1.0 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 9 Diode Forward Voltage vs. Current<br>9 VDS = 30V<br>ID  4.3= A<br>TT, 7 | |YTYA |<br>fe<br>|<br>4 PA | |<br>2<br>a<br>0 5 10 15 20 25<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Fig. 11 Gate Charge<br>)Ω<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (V)<br>IS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
4.0<br>3.5<br>3.0<br>2.5<br>tt} tt yy<br>it ID = 1mA<br>2.0<br>——_ | |! |<br>1.5 I D = 250µA<br>1.0<br>Cr Ps<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 8 Gate Threshold Variation vs. Ambient Temperature<br>10,000 a — ——————GO—————|<br>1,0000G —aeee ee ee Ciss<br>eeee ee<br>RG<br>Nee Coss<br>oo Sea C rss<br>ee+ f = 1MHz ee-—<br>‘ 0 es 5 10 | ee 15 | 20 | [| 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 10 Typical Junction Capacitance<br>100<br>a OO OO OO OO OG OOOO<br>A R DS(on) OO OO<br>10 Limited<br>TSH N EEEE SS S R<br>eeee<br>1 RRRA DC SRO PREFPK<br>PW = 10s<br>ee P W  = 1s YANN<br>PW = 100ms<br>0.1 IRR TJ(max) = 150°C PW = 10ms PW = 1ms<br>TA = 25°C H PW = 100µs TASS SNE<br>T TT [NANO][ NTT]<br>VGS = -12V<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.01 FTI<br>FETT FST<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


4 of 6 

DMN6040SFDE Datasheet number: DS35792 Rev. 8 - 2 

August 2012 © Diodes Incorporated 

**www.diodes.com** 

**DMN6040SFDE** [ 

**==> picture [396 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 SSS<br>Fe D = 0.7 tee tttN0<br>D = 0.5 rn PE<br>BHR rr et<br>D = 0.3 eee<br>eee 7a<br>0.1 D = 0.9<br>ELAINE D = 0.1 TTT ITIL UTI TTT ETT<br>Bo SEER EE<br>ES<br>D = 0.05<br>bo eT<br>Eg |<br>Se D = 0.02 rr<br>0.01 PAINa D = 0.01 TMIel FP CUTIE TUTE TTI TET<br>a D = 0.005 A ree RθJA(t) = r(t) * RθJA<br>Eea RθJA = 61°C/W TLT T ]<br>Duty Cycle, D = t1/ t2<br>Single Pulse<br>0.001 Bere il<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

|**Z(4X)**<br>**E**<br>**E2**<br>**A**|**D2**<br>**e**<br>a~~a~~<br>a~~.~~|**D**|**b1**<br>~~**L**~~**1**<br>~~ai~~<br>~~—~~<br>~~Tyc~~|**A1**<br>**K1**<br>**K2**<br>**b(6X)**<br>**L(2X)**<br>**A3**<br>|<br>|<br>|<br>||**U-DFN2020-6**<br>**Type E**<br>**Dim**<br>**Min**<br>**Max**<br>**Typ**<br>**A**<br>0.57<br>0.63<br>0.60<br>**A1**<br>0<br>0.05<br>0.03<br>**A3**<br>—<br>—<br>0.15<br>**b**<br>0.25<br>0.35<br>0.30<br>**b1 **<br>0.185<br>0.285<br>0.235<br>**D**<br>1.95<br>2.05<br>2.00<br>**D2**<br>0.85<br>1.05<br>0.95<br>**E**<br>1.95<br>2.05<br>2.00<br>**E2**<br>1.40<br>1.60<br>1.50<br> **e**<br>—<br>—<br>0.65<br>**L**<br>0.25<br>0.35<br>0.30<br>**L1**<br>0.82<br>0.92<br>0.87<br>**K1**<br>—<br>—<br>0.305<br>**K2**<br>—<br>—<br>0.225<br>**Z**<br>—<br>—<br>0.20<br>**All Dimensions in mm**<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~esee~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~**es**~~<br>~~es~~<br>~~_ss~—“‘CSDWO~~|
|---|---|---|---|---|---|



5 of 6 **www.diodes.com** 

DMN6040SFDE Datasheet number: DS35792 Rev. 8 - 2 

August 2012 © Diodes Incorporated 

**DMN6040SFDE** 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [522 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
Value<br>Dimensions<br>(in mm)<br>X2 C  0.650<br>Y3 Y2 Y1 X  0.400<br>X1  0.285<br>X2  1.050<br>X1 Y  0.500<br>Y1  0.920<br>Y2  1.600<br>Y3  2.300<br>X (6x) iaale C Y (2x) ——<br>IMPORTANT NOTICE<br>DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,<br>INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE<br>(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).<br>**----- End of picture text -----**<br>


Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2012, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN6040SFDE Datasheet number: DS35792 Rev. 8 - 2 

August 2012 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN6040SFDE-7/power-mosfet-n-channel-60-v-53-a-003-ohm-u-dfn2020)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn6040sfde-7/mosfet-n-ch-60v-5-3a-u-dfn2020/dp/3680133RL)
---

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