# Power MOSFET, N Channel, 60 V, 300 mA, 2 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3943637RL/)

**URL**: https://novapart.co/products/DMN601WK-7/power-mosfet-n-channel-60-v-300-ma-2-ohm-sot-323
**SKU**: DMN601WK-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0450
**Stock**: 100+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 300mA |
| Drain Source On State Resistance | 2ohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943637RL/)

**DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET** | 

## **Features** 

## **Mechanical Data** 

- Low On-Resistance: RDS(ON) 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - Case: SOT323 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020D 

   - Terminals: Finish  Matte Tin annealed over Alloy 42 leadframe.  Solderable per MIL-STD-202, Method 208 **e3** 

   - Terminal Connections: See Diagram 

   - Weight: 0.006 grams (approximate) 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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**----- Start of picture text -----**<br>
SOT323 Drain<br>D<br>Gate<br>G S<br>   Gate<br>   Protection Source<br>   Diode TOP VIEW<br>ESD PROTECTED E & TOP VIEW a EQUIVALENT CIRCUIT t -_ Pin Out Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN601WK-7|SOT323|3000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html 

## **Marking Information** 

**==> picture [154 x 49] intentionally omitted <==**

**----- Start of picture text -----**<br>
K7K K7K<br>Chengdu A/T Site Shanghai A/T Site<br>YM YM<br>**----- End of picture text -----**<br>


K7K = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM    = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 

## Date Code Key 

|Date Code Key|||||||
|---|---|---|---|---|---|---|
|**Year**<br>**2012**<br>**Code**<br>Z<br>~~a~~|**2013**<br>A||**2014**<br>**2015**<br>B<br>C|**2016**<br>D||**2017**<br>**2018**<br>E<br>F|
|**Month**<br>**Jan**<br>**Code**<br>1<br>~~[|~~|**Feb**<br>**Mar**<br>2<br>3<br>~~—}—}~~||**Apr**<br>**May**<br>**Jun**<br>4<br>5<br>6<br>~~—_}—_}—_}~~|**Jul**<br>**Aug**<br>7<br>8<br>~~—_}—|~~||**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>9<br>O<br>N<br>D<br>~~—}—}—_}—_~~|



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DMN601WK Document number: DS30653  Rev. 5 - 2 

September 2013 © Diodes Incorporated 

**DMN601WK** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Drain Current (Note 5)|Continuous<br>Pulsed(Note 6)|ID|300<br>800|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|PD|200|mW|
|Thermal Resistance, Junction to Ambient|RJA|625|°C/W|
|Operating and Storage Temperature Range|TJ,TSTG|-65 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
|~~II~~|||||||
|**Characteristic**<br>~~I~~|**Symbol**<br>~~I~~<br>~~I~~|**Min**<br>~~I~~<br>~~I~~|**Typ**<br>~~I~~|**Max**<br>~~I~~|**Unit**<br>~~I~~|**Test Condition**<br>~~I~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~I~~<br>~~I I~~<br>~~Gt~~<br>~~tI~~|||||||
|Drain-Source Breakdown Voltage<br>~~ry~~|BVDSS<br>~~ry~~<br>~~Gt~~<br>~~III~~|60<br>~~ry~~<br>~~tI~~<br>~~II~~|<br>~~ry~~<br>~~I~~|<br>~~ry~~|V<br>~~ry~~|VGS= 0V,ID= 10µA<br>~~ry~~|
|Zero Gate Voltage Drain Current<br>~~ry~~<br>~~ny~~|IDSS<br>~~ry~~<br>~~Gt~~<br>~~ny~~<br>~~III~~|<br>~~ry~~<br>~~tI~~<br>~~ny~~<br>~~II~~|<br>~~ry~~<br>~~ny~~<br>~~I~~|1.0<br>~~ry~~<br>~~ny~~|µA<br>~~ry~~<br>~~ny~~|VDS= 60V, VGS= 0V<br>~~ry~~<br>~~ny~~|
|Gate-Source Leakage<br>~~Pe~~|IGSS<br>~~III ~~<br>~~Pe~~|<br> ~~II ~~<br>~~Pe~~|<br> ~~I~~<br>~~Pe~~|±10<br>~~Pe~~|µA<br>~~Pe~~|VGS =±20V, VDS= 0V<br>~~Pe~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~Pe~~|VGS(th)<br>~~Pe~~<br>~~ee~~|1.0<br>~~Pe~~<br>~~ee~~|1.6<br>~~Pe~~<br>~~ee~~|2.5<br>~~Pe~~<br>~~ee~~|V<br>~~Pe~~|VDS= 10V, ID= 1mA<br>~~Pe~~|
|Static Drain-Source On-Resistance|RDS(ON)<br>~~ee~~|<br><br>~~ee~~|<br><br>~~ee~~|2.0<br>3.0<br>~~ee~~||VGS =10V, ID= 0.5A|
|||||||VGS= 4.5V, ID= 0.2A|
|Forward Transfer Admittance<br>~~Pe~~||Yfs|<br>~~Pe~~|80<br>~~Pe~~|<br>~~Pe~~|<br>~~Pe~~|ms<br>~~Pe~~|VDS= 10V, ID= 0.2A<br>~~Pe~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~nnnII~~|||||||
|Input Capacitance<br>~~rs~~<br>~~ne~~|Ciss<br>~~rs~~<br>~~nnn~~<br>~~ne~~|<br>~~rs~~<br>~~I~~<br>~~ne~~|<br>~~rs~~<br>~~I~~<br>~~ne~~|50<br>~~rs~~<br>~~I~~<br>~~ne~~|pF<br>~~rs~~<br>~~ne~~|VDS= 25V, VGS= 0V, f = 1.0MHz<br>~~ne~~|
|Output Capacitance<br>~~ne~~|Coss<br>~~nnn ~~<br>~~ne~~|<br> ~~I ~~<br>~~ne~~|<br> ~~I~~<br>~~ne~~|25<br>~~I~~<br>~~ne~~|pF<br>~~ne~~||
|Reverse Transfer Capacitance<br>~~ne~~|Crss<br>~~ne~~|<br>~~ne~~|<br>~~ne~~|5.0<br>~~ne~~|pF<br>~~ne~~||



7.  Short duration pulse test used to minimize self-heating effect. 

8.  Guaranteed by design. Not subject to production testing. 

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DMN601WK Document number: DS30653  Rev. 5 - 2 

September 2013 © Diodes Incorporated 

**DMN601WK** | 

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LJIS,<br>3-0:<br>1 Nn c o R P<br>**----- End of picture text -----**<br>


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1.0<br>0.80.6 Yo<br>Yr — Lav ||<br>0.4 7 V,WaAnum<br>0.2 Po<br>|<br>0 A<br>0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1  Typical Output Characteristics<br>2<br>Vps=7 10V<br>Ip= 1mA<br>1.5 Pulsed<br>——~_"<br>~<br>1<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>Tch, CHANNEL TEMPERATURE (°C)<br>Fig. 3  Gate Threshold Voltage vs. Channel Temperature<br>10 pete pp ey<br>EPT [=e] Ee tT Vesputsea= 55V TLTT<br>fT TT UH<br>ft ELT ty = 125°¢ | ta= sre | | |[fi]<br>reese [ih]  a rt<br>rit<br>1 oe eo<br>i i ——_ acne<br>ro | eee IT<br>SST| 1, =-55°0 Co<br>aa|<br>a4a ail|<br>0.1ELUTE EERIE EEA<br>0.001 0 . 01 0.1 1<br>ID, DRAIN CURRENT (A)<br>Fig. 5  Static Drain-Source On-Resistance<br>vs. Drain Current<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**==> picture [222 x 487] intentionally omitted <==**

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VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 2  Typical Transfer Characteristics<br>10 aa OeOO OOOO OO| OOOPTTOOTry<br>EeeCE >=. = tov DC<br>Cer<br>oer es So<br>Pose TTT<br>el io} LE<br>ETAT 80  [||peeose TTT<br>P|[id taesero] [Tt<br>1 SSPT<br>Seen<br>iaoam SEStiimemeeersess|<br>=Eel<br>eesso| A HI]tH<br>Sime eee<br>rn| ll<br>0.1<br>0 . 001 0.01 0.1 1<br>ID [,]  DRAIN CURRENT (A)<br>Fig. 4 Static Drain-Source On-Resistance vs. Drain Current<br>7<br>| Ty — = 25°C apo,<br>6 Pulsed<br>5 jana ;<br>3<br>; emps<br>0 FL EEEELEL EI<br>0 2 4 6 8 10 12 14 16 18 20<br>VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 6  Static Drain-Source On-Resistance<br>vs. Gate-Source Voltage<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


3 of 5 

DMN601WK 

September 2013 © Diodes Incorporated 

**www.diodes.com** 

Document number: DS30653  Rev. 5 - 2 

1 **L** nIT,CrDES>O R PORATED 

**DMN601WK** | 

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V GS  = 0V<br>pulsed [p= 300mA_Y Pulsed /0<br>2 V4 722////// oo<br>TA  = 125 C°<br>4 eee TA  = 150°C A/a |_|<br>ot MM |<br>1.5 aa eeeWIMee = TA  = 85°C<br>\7 moeyTf2 eyge ol 2 a<br>[|R= TA = 25 ee °C<br>y | | T Aye fryy ty ft}<br>' 7 7 anaALATinee TA = 0°C nan<br>0 . 5 | 0.09 eeeEEee 2 eese0)gp2 ee TA = -25°C ft}<br>ee a eeeeee<br>TA   = -55°C<br>0 o ot E TET |<br>- 75 - 50 - 25 O 25 50 75 100 125 150 0 0 . 5 1 1 . 5<br>Tch, CHANNEL TEMPERATURE (°C) Vgp» SOURCE -D RAIN VOLTAGE (V)<br>Fig. 7  Static Drain-Source On-State Resistance  Fig . 8 Reverse Drain Current vs . Source -D rain Voltage<br>vs. Channel Temperature<br>—————— 1<br>—a os” |= OY = Pulsedran Co eeerrr<br>9 ee A Hi | TE Ogee<br>eT 12 25°C Pe AE<br>EVanee ae. ee areal<br>Pooffefo = Tq= 880 AA |<br>ysa sea es esAys |_| ao| ee<br>eee eee AOA<br>itt T yt | | al iimsee UT |)<br>ee 0S ree<br>SSS SSS<br>FA ve a a<br>Poa ooo ee ell<br>oot0 | | | ¥ 0.5| T | td 1 ooo 0.001LL TI0 . 01 LETT 0.1 ETTI 1<br>Vsp, SOURCE -D RAIN VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Fig . 9 Reverse Drain Current vs . Source -D rain Voltage Fig.10  Forward Transfer Admittance vs. Drain Current<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON) , REVERSE DRAIN CURRENT (A)<br>R IDR<br>, REVERSE DRAIN CURRENT (A)<br>IDR<br>|, FORWARD TRANSFER  ADMITTANCE (S)<br>fs<br>|Y<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [354 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
> A l e<br>SOT323<br>rH P<br>Dim  Min  Max  Typ<br>— —— - r a A  0.25  ee 0.40  ee 0.30<br>B C B  1.15  1.35  1.30<br>yo a ee ee<br>C  2.00  2.20  2.10<br>——— Ly ee ee ee<br>D  -  -  0.65<br>Z = a ee ee<br>G G  1.20  1.40  1.30<br>—— H | ee H  1.80  ee 2.20  ee 2.15<br>J  0.0  0.10  0.05<br>+ ee ee ee<br>K K  0.90  1.00  1.00<br>M<br>L  0.25  0.40  0.30<br>+Ut(Poth Ga) ( D+ eeee ee ee<br>M  0.10  0.18  0.11<br>7TH J D 4 ne L A e ee  0°  ee 8°  ee -<br>[|t—“‘C‘S’CSC*#C#‘éz All Dimensions in mm<br>( G) ee ee ee<br>**----- End of picture text -----**<br>


4 of 5 **www.diodes.com** 

DMN601WK Document number: DS30653  Rev. 5 - 2 

September 2013 © Diodes Incorporated 

**DMN601WK** 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Y<br>Z<br>TI E+ C<br>X E<br>e a e<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Z**|2.8|
|**X**|0.7|
|**Y**|0.9|
|**C**|1.9|
|**E**|1.0|



## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

## **www.diodes.com** 

5 of 5 **www.diodes.com** 

DMN601WK Document number: DS30653  Rev. 5 - 2 

September 2013 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmn601wk-7/mosfet-n-ch-60v-0-3a-sot-323/dp/3943637RL)
---

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