# Power MOSFET, N Channel, 50 V, 300 mA, 1.3 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943633/)

**URL**: https://novapart.co/products/DMN5L06KQ-7/power-mosfet-n-channel-50-v-300-ma-13-ohm-sot-23
**SKU**: DMN5L06KQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0400
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 50V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 300mA |
| Drain Source On State Resistance | 1.3ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943633/)

**DMN5L06KQ** TT **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)** **MAX**|**ID** **MAX**<br>**TA = +25°C**|
|50V|2.0Ω@VGS= 5.0V|300mA|
||2.5Ω@VGS= 2.5V|200mA|



## **Features and Benefits** 

- Low On-Resistance 

- Very Low Gate Threshold Voltage (1.0V Max) 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- ESD Protected Up To 2kV 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

## **Mechanical Data** 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Load Switches 

   - Terminals: Finish – Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 

- Level Switches 

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 Terminal Connections: See Diagram<br> Weight: 0.008 grams (Approximate)<br>SOT23  D<br>D<br>G<br>ESD PROTECTED TO 2kV G S<br>2 - O Cs<br>Top View  Gate Protection Diode S Top View<br>Equivalent Circuit<br>g Information Information (Note 5)<br>Part Number Case Packaging<br>DMN5L06KQ-7  SOT23 3000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 5) 

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

DAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: G = 2019) M = Month (ex: 9 = September) 

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DAB YM = Date Code Marking<br>Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2006 ~ 2019 2020 2021 2022 2023  2024  2025  2026  2027  2028<br>ee Code T  ~  G  H  I  J  K  L  M  N  O  P<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>ee Code 1  2  3  4  5  6  7  8  9  O  N  D<br>DMN5L06KQ 1 of 6  June 2019<br>www.diodes.com   © Diodes Incorporated<br>YM<br>**----- End of picture text -----**<br>


DMN5L06KQ Document number: DS41931  Rev. 1 - 2 

June 2019 © Diodes Incorporated 

**DMN5L06KQ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|VDSS|50|V|
|Gate-Source Voltage|VGSS|±20|V|
|Drain Current (Note 6)<br>Continuous<br>Pulsed (Note7)|ID|300<br>800|mA|
|Maximum BodyDiode Forward Current(Note 6)|IS|300|mA|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|PD|350|mW|
|Thermal Resistance,Junction to Ambient|RθJA|357|C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-65 to +150|C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~—~~|**Symbol**<br>~~—~~|**Min**<br>~~—~~|**Typ**<br>~~—~~|**Max**<br>~~—~~|**Unit**<br>~~—~~|**Test Condition**<br>~~—~~|
|**OFF CHARACTERISTICS(Note 8)**<br>~~—~~|||||||
|Drain-Source Breakdown Voltage<br>~~—~~|BVDSS<br>~~—~~|50<br>~~—~~|—<br>~~—~~|—<br>~~—~~|V<br>~~—~~|VGS= 0V,ID= 10μA<br>~~—~~|
|Zero Gate Voltage Drain Current<br>@TC= +25°C<br>~~—~~|IDSS<br>~~—~~<br>~~ee~~|—<br>~~—~~|—<br>~~—~~|60<br>~~—~~|nA<br>~~—~~|VDS= 50V,VGS= 0V<br>~~—~~|
|Gate-Body Leakage<br>~~ee~~|IGSS<br>~~ee~~<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1<br>500<br>50<br>~~ee~~|μA<br>nA<br>nA<br>~~ee~~|VGS= ±12V, VDS= 0V<br>VGS= ±10V, VDS= 0V<br>VGS= ±5V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 8)**<br>~~ee~~<br>~~QO~~<br>~~GO~~<br>~~OOGO~~|||||||
|Gate Threshold Voltage<br>~~QQ~~|VGS(TH)<br>~~QQ~~|0.49<br>~~QQ~~|—<br>~~QQ~~<br>~~QO~~|1.0<br>~~QQ~~<br>~~GO~~|V<br>~~QQ~~<br>~~OO~~|VDS= VGS,ID= 250μA<br>~~QQ~~<br>~~GO~~|
|Static Drain-Source On-Resistance<br>~~eee~~|RDS(ON)<br>~~eee~~|—<br>—<br>—<br>~~eee~~|2.0<br>1.6<br>1.3<br>~~QO~~<br>~~eee~~|3.0<br>2.5<br>2.0<br>~~GO~~<br>~~eee~~|Ω<br>~~OO ~~<br>~~eee~~|VGS= 1.8V, ID= 50mA<br>VGS= 2.5V, ID= 50mA<br>VGS= 5.0V,ID= 50mA<br> ~~GO~~<br>~~eee~~|
|On-State Drain Current<br>~~eee~~|ID(ON)<br>~~eee~~|0.5<br>~~eee~~|1.4<br>~~eee~~|—<br>~~eee~~|A<br>~~eee~~|VGS= 10V,VDS= 7.5V<br>~~eee~~|
|Forward Transconductance<br>~~ep~~||Yfs|<br>~~ep~~|200<br>~~ep~~|—<br>~~ep~~|—<br>~~ep~~|mS<br>~~ep~~|VDS= 10V,ID= 0.2A<br>~~ep~~|
|Source-Drain Diode Forward Voltage<br>~~ep~~|VSD<br>~~ep~~|0.5<br>~~ep~~|0.8<br>~~ep~~|1.4<br>~~ep~~|V<br>~~ep~~|VGS= 0V,IS= 115mA<br>~~ep~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|50<br>~~ee~~|pF<br>~~ee~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|25<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|5.0<br>~~ee~~|pF<br>~~ee~~||



7. Pulse width 10ms, Duty Cycle 1%. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1  Typical Output Characteristics<br>**----- End of picture text -----**<br>


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08 Po]aNLfs aeIy=1mA<br>—<br>HOO<br>e e<br>0 . 6<br>op | | | | | | TS<br>0.403CAEP<br>a<br>MELE<br>A 0<br>-50  -25 0 25  50 75 100  125 150<br>T    , CHANNEL TEMPERATURE (°C)CH<br>Fig. 3  Gate Threshold Voltage vs. Channel Temperature<br>10 ee ee eet<br>Pulsed Oe<br>Etec EHHCo EEer<br>el 01<br>asst ee eS TT<br>Ta = 150°C Besel|<br>pana im mni<br>{ee<br>ee<br>KIT8T HT<br>||| tli te2sc  |rs26c [|| III<br>en<br>0.001 0.01 a 0.1 1<br>ID, DRAIN CURRENT (A)<br>Fig. 5  Static Drain-Source On-Resistance vs. Drain Current<br>)<br>TATIC DRAIN-SOURCE<br>S<br>,<br>ON-RESISTANCE (<br>DS(on)<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>TATIC DRAIN-SOURCE<br>,<br>ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 2  Typical Transfer Characteristics<br>**----- End of picture text -----**<br>


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10 Ves wjy = 10V Fr0eto pty<br>Pulsed | COCLc<br>EE sore HH<br>st<br>ee<br>1 a ; 2 il<br>Sse<br>SSeeeeniiiideees wesceasel<br>etersA Ht<br>TE LTPP LP<br>Ant —CetH<br>0. 0 001 TIN 0.01 LUE 0.1 ET1<br>ID [,]  DRAIN CURRENT (A)<br>Fig. 4 Static Drain-Source On-Resistance vs. Drain Current<br>oan<br>Ty = 25°C<br>25 rec<br>1s<br>\<br>7<br>1 . 0 [a<br>A 24 6 sooo10 20<br>VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 6  Static Drain-Source On-Resistance<br>vs. Gate-Source Voltage<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DS(on)<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(on)<br>R<br>, STATIC DRAIN-SOURCE  ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, STATIC DRAIN-SOURCE  ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**DMN5L06KQ** —— 

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A<br>-LC<br>atomsp= 280m<br>=<br>Q<br>5 0-2 5 . TA, AMBIENT TEMPERATURE ( 0 25 50 75 100 °C) 125 150<br>Fig. 7  Static Drain-Source On-State Resistance<br>vs. Ambient Temperature<br>Voy<br><==Pulsed<br>ne a e a<br>on Aa A<br>Zi i | | Yi |<br>a es ee0 |<br>+> 4<br>ptt | [| [A [ [| |<br>0 . 04 foo} Sf an<br>Fe —<br>———<br>- + J<br>0 . 004 P| Tt uy ET tt<br>0 0.2 0 . 4 0.6 0 . 8 1.0<br>Vsp, SOURCE -D RAIN VOLTAGE (V)<br>Fig . 9 Reverse Drain Current vs. Source -D rain Voltage<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>| | | AL<br>50<br>Roya = 357 °C/W oo \K<br>0 oN<br>0 50 100 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 11  Derating Curve - Total<br>DS(on)<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DR<br>, REVERSE DRAIN CURRENT (A)<br>I<br>, STATIC DRAIN-SOURCE  ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>D<br>, POWER DISSIPATION (mW)<br>P<br>**----- End of picture text -----**<br>


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, REVERSE DRAIN CURRENT (A)<br>IDR<br>**----- End of picture text -----**<br>


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Sv See<br>Pobed Hilly = sae et [ett] ease,<br>PetPulsed tt Tas 88 et IY<br>eel<br>ec, 7740<br>——_— Ty, = 85°C<br>0 ASHE<br>DE A EH EF EE<br>eyA7.6 ne ee<br>_AAY A<br>Arno 1<br>Yj/| UAE<br>oo0t . 001 0.01 0.1 1<br>ID, DRAIN CURRENT (A)<br>Fig.10  Forward Transfer Admittance vs. Drain Current<br>|, FORWARD TRANSFER  ADMITTANCE (S)<br>|Y<br>fs<br>**----- End of picture text -----**<br>


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60<br>50<br>40<br>Ciss<br>30<br>20<br>10 Hao Coss<br>wt ft tt<br>f = 1MHz Crss<br>0 eei<br>0 5 10 15 20 25 30<br>VVDSDS , DRAIN-SOURCE VOLT AGE (V)AGE (V)<br>Figure 12 Typical Junction CapacitanceFig. 12 Typical Junction Temperature<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>**----- End of picture text -----**<br>


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June 2019 © Diodes Incorporated 

Document number: DS41931  Rev. 1 - 2 

**DMN5L06KQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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All 7°<br>H<br>SOT23<br>GAUGE PLANE0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K B  1.20 1.40 1.30<br>C  2.30 2.50 2.40<br>a D  0.89 1.03 0.915<br>A M F  0.45  0.60  0.535<br>Hise;eeER L , L1 FREE= G  ——— 1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>ee ——— J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>L1  0.25 0.55 0.40<br>M  0.085 0.150 0.110<br>iE =e== a  0°  8°  --<br>D<br>— All Dimensions in mm<br>F G<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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Y<br>Y1 fic C<br>Aq<br>Po X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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DMN5L06KQ Document number: DS41931  Rev. 1 - 2 

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**DMN5L06KQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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DMN5L06KQ Document number: DS41931  Rev. 1 - 2 

June 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN5L06KQ-7/power-mosfet-n-channel-50-v-300-ma-13-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn5l06kq-7/mosfet-n-ch-50v-0-3a-sot-23/dp/3943633)
---

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