# Power MOSFET, N Channel, 50 V, 160 mA, 3.1 ohm, SOT-523, Surface Mount

![Product image](https://novapart.co/image/farnell:2543541/)

**URL**: https://novapart.co/products/DMN55D0UT-7/power-mosfet-n-channel-50-v-160-ma-31-ohm-sot-523
**SKU**: DMN55D0UT-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2180
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:160mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):3.1ohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs:800mV; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (10-Jun-2022) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4V |
| Transistor Case Style | SOT-523 |
| Drain Source Voltage Vds | 50V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 160mA |
| Drain Source On State Resistance | 3.1ohm |
| Gate Source Threshold Voltage Max | 800mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2543541/)

**DMN55D0UT** TT **N-CHANNEL ENHANCEMENT MODE MOSFET** 

|**Product Summary**<br>~~Co~~|**Product Summary**<br>~~Co~~|**Product Summary**<br>~~Co~~|
|---|---|---|
|~~Co~~|||
|**BVDSS**<br>~~Co~~|**RDS(ON) max**|**ID max**|
|50V|4Ω @ VGS= 4V|160mA|



## **Features and Benefits** 

- Low On-Resistance 

- Very Low Gate Threshold Voltage 

- Low Input Capacitance 

- ESD Protected Gate to 2kV 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT523 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 

- Motor Driving 

- Power Management Functions 

- Load Switching 

- Terminal Connections: See Diagram 

   - Weight: 0.002 grams (Approximate) 

**==> picture [427 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
<br>SOT523<br>D<br>D<br>G<br>ESD PROTECTED TO 2kV G S<br>Ae o S<br>Top View  Gate Protection Diode S Top View<br>Equivalent Circuit<br>g Information Information (Note 4)<br>Part Number Case Packaging<br>DMN55D0UT-7  SOT523  3,000/Tape & Reel<br>**----- End of picture text -----**<br>


**Ordering Information Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

NAC = Product Type Marking Code YM = Date Code Marking NAC YM Y or Y = Year (ex: H = 2020) M = Month (ex: 9 = September) 

Date Code Key **Year 2008 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~ee~~ **Code** V … H I J K L M N O P R **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~-_ tt~~ DMN55D0UT 1 of 6 February 2020 Document number: DS31330 Rev. 8 - 2 **www.diodes.com** © Diodes Incorporated 

February 2020 © Diodes Incorporated 

**DMN55D0UT** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|VDSS|50|V|
|Gate-Source Voltage|VGSS|±12|V|
|Drain Current(Note 5)Continuous|ID|160|mA|
|Pulsed Drain Current(Note 5)|IDM|560|mA|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|200|mW|
|Thermal Resistance,Junction to Ambient|RθJA|625|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 6)|||||||
|Drain-Source Breakdown Voltage<br>~~EEE~~|BVDSS<br>~~EEE~~|50<br>~~EEE~~|<br>~~EEE~~|<br>~~EEE~~|V<br>~~EEE~~|VGS= 0V,ID= 250µA<br>~~EEE~~|
|Zero Gate Voltage Drain Current<br>~~EEE~~|IDSS<br>~~EEE~~|<br>~~EEE~~|<br>~~EEE~~|1<br>~~EEE~~|µA<br>~~EEE~~|VDS= 50V,VGS= 0V<br>~~EEE~~|
|Gate-Source Leakage<br>~~EEE~~|IGSS<br>~~EEE~~|<br>~~EEE~~|<br>~~EEE~~|1.0<br>5.0<br>~~EEE~~|µA<br>~~EEE~~|VGS= ±8V, VDS= 0V<br>VGS= ±12V,VDS= 0V<br>~~EEE~~|
|**ON CHARACTERISTICS**(Note 6)<br>~~SS~~|||||||
|Gate Threshold Voltage<br>~~SS~~|VGS(TH)<br>~~SS~~|0.7<br>~~SS~~|0.8<br>~~SS~~|1.0<br>~~SS~~|V<br>~~SS~~|VDS= VGS,ID= 250µA<br>~~SS~~|
|Static Drain-Source On-Resistance<br>~~SS~~|RDS(ON)<br>~~SS~~|<br>~~SS~~|3.1<br>~~SS~~|4<br>~~SS~~|Ω<br>~~SS~~|VGS= 4V,ID= 100mA<br>~~SS~~|
|||<br>~~SS~~|4<br>~~SS~~|5<br>~~SS~~||VGS= 2.5V,ID= 80mA<br>~~SS~~|
|Forward Transconductance<br>~~SS~~|gFS<br>~~SS~~|180<br>~~SS~~|<br>~~SS~~|<br>~~SS~~|mS<br>~~SS~~|VDS= 10V,ID= 100mA,f = 1.0kHz<br>~~SS~~|
|Diode Forward Voltage|VSD|—|0.70|1.3|V|VGS= 0V,IS= 100mA|
|**DYNAMIC CHARACTERISTICS**(Note 7)|||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~——~~|<br>~~——~~|25<br>~~——~~|<br>~~——~~|pF<br>~~——~~|VDS= 10V, VGS= 0V, f = 1.0MHz<br>~~——~~|
|Output Capacitance<br>~~——~~|Coss<br>~~——~~|<br>~~——~~|5<br>~~——~~|<br>~~——~~|pF<br>~~——~~||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~——~~|<br>~~——~~|2.1<br>~~——~~|<br>~~——~~|pF<br>~~——~~||
|Gate Resistance<br>~~——~~|RG<br>~~——~~|—<br>~~——~~|500<br>~~——~~|—<br>~~——~~|Ω<br>~~——~~|f = 1MHz,VGS= 0V,VDS= 0V<br>~~——~~|
|Total Gate Charge(VGS= 4V)|QG|—|295|—|pC|VDS= 10V,<br>ID= 100mA<br>~~ee~~|
|Total Gate Charge(VGS= 8V)|QG|—|636|—|pC||
|Gate-Source Charge|QGS|—|72|—|pC||
|Gate-Drain Charge<br>~~—————~~|QGD|—|18|—|pC<br>~~ee~~||
|Turn-On DelayTime<br>~~—————~~|tD(ON)|—|6.0|—|ns<br>~~ee~~|VDD= 10V, VGS= 4V,<br>RG= 25Ω, ID= 100mA<br>~~ee~~|
|Turn-On Rise Time<br>~~—————~~|tR|—|4.4|—|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~—————~~|tD(OFF)|—|23.4|—|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—————~~|tF|—|11.0|—|ns<br>~~ee~~||



Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 

6. Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to product testing. 

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**----- Start of picture text -----**<br>
0.8 0.5<br>0.7 SESSnnS VGS = 10V oe V     = 10VDS /<br>0.4<br>0.6 VGS = 4.5V T   = 85°CA<br>[A)] (T T   = 25°CA<br>0.50.4 CoHOfeer VGS = 3.0V [N] RRUE 0.3 n/ T   = -55°CA a T   = 125°CAT   = 150°CA<br>C<br>0.3 an) eneee V GS = 2.5V [IN] A 0.2 a) ae<br>fe — R j<br>D<br>0.2 ,I D<br>0.1<br>0.1 You V GS  = 1.5V f e<br>0 eeeeee VGS = 1.0V 0 Ae<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 e 5 e 0 1 2 3 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>10 10<br>)( T   = 150°CA<br>E<br>C<br>NA T   = 125°CA<br>T<br>I [S] S T   = 85°CA<br>E<br>a ee VGS = 2.5V ll a<br>- [R]<br>a eal eee<br>O [N] T   = 25°CA<br>E<br>CT Il C e e<br>VGS = 4.0V R<br>O [U]<br>TM - [S]<br>lt AM I [N] A T   = -55°CA<br>R<br>D<br>,<br>[S(ON)] D<br>1 MMM R 1 E T E<br>0.001 0.01 0.1 1 0 0.1 0.2 0.3 0.4 0.5<br>ID, DRAIN CURRENT (A) I  , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance  Fig. 4  Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>2.0 35<br>1.8<br>30<br>THTTYA 8 CTT<br>1.6 VGS = 4V<br>ID = 100mA 25 Ciss<br>1.4 oo eee<br>COAT VGS = 2.5V Ser<br>ID = 80mA 20<br>1.2 f = 1MHz<br>He CE VGS = 0V<br>15<br>1.0<br>10<br>0.8 Sepfeeen =  EET<br>TAT ok<br>0.6 5 C oss<br>aire NE<br>0.4 PEPPER 0 Crss  SEE ES<br>-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40<br>TTJJ, JUNCTION TEMPERATURE (°C) , JUNCTION TEMPERATURE (癈 ) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 5 On-Resistance Variation with TFig. 5 On-Resistance Variation with T emperature Fig. 6 Typical Capacitance<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>D<br>, DRAIN CURRENT (A)<br>I<br>, DRAIN-TO-SOURCE<br>R RESISTANCE (NORMALIZED)<br>DS(ON)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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**DMN55D0UT** CT 

## DIODES 

**==> picture [470 x 679] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>1.01.1 NUE ELE fif-<br>0.1<br>O [LTAGE] [(] [V] [)] [A)] (T<br>V 0.9 N\ I   = 250µAD [N] E —— eeee<br>RR T   = 150°CA<br>O [LD] 0.8 E EN ~ UCCE 0.01 — / T   = 85°CA T   = 125°CA sH fanff ——<br>R<br>T [HRESH]<br>T [E] 0.7 [OU] S T   = 25°CA<br>[A] G I [,] S 0.001 T   = -55°CA<br>, [)] H<br>0.6<br>[(T] S oN A<br>VG | JA f | ff | f|<br>0.5 0.0001<br>-50 -25 0 25 50 75 100 125 150 0.1 0.3 0.5 0.7 0.9 1.1<br>T  , AMBIENT TEMPERATURE (°C)A V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>8 ELLY.VA<br>6<br>VDS = 10V<br>ID = 0.1A<br>4 ALL<br>2<br>0 Ath<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 9 Gate Charge<br>1<br>D = 0.7<br>D = 0.5<br>Pt<br>FH D = 0.3 SE TE Et<br>Ee tert NHI D = 0.9 EHH<br>0.1 ST D = 0.1 | Nau CUI LI TUT<br>| D = 0.05 [Tea a a a<br>ull CTI COI RJA(t) = r(t) * RJA PT<br>D = 0.02 R JA = 625°C/W<br>De D = 0.01 a TT RL a<br>0.01 D = 0.005 P(pk) t1<br>ee ll LTCELUI),<br>D = Single Pulse t 2<br>ee T J  - T A  = P * R JA (t) PE<br>CT I) Duty Cycle, D = t 1 /t 2 TET<br>0.001 AN AA<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t 1, PULSE DURATION TIME (s)<br>Fig. 10 Transient Thermal Response<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE V<br>GS(TH)<br>V<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>r(t), TRANSIENT THERMAL RESISTANCE<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT523** 

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SOT523<br>Dim  Min  Max  Typ<br>—_t| _ —=<br>A1  0.00 0.10 0.05<br>E E1 A2  0.60 0.80 0.75<br>A3  0.45 0.65 0.50<br>b 0.15 0.30 0.22<br>c 0.10 0.20 0.12<br>D  1.50 1.70 1.60<br>b E  1.45 1.75 1.60<br>e1 E1  0.75 0.85 0.80<br>=e D ==== e  0.50 BSC<br>e1  0.90 1.10 1.00<br>L  0.20 0.40 0.33<br>a  0° --  8°<br>A2<br>A3 All Dimensions in mm<br>c a<br>ila A1 e Ih, L =<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>**----- End of picture text -----**<br>


**SOT523** 

**==> picture [147 x 79] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y1 C<br>Y<br>X<br>X1<br>‘8 _ |<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|1.29|
|**X**|0.40|
|**X1**|0.70|
|**Y**|0.51|
|**Y1**|1.80|



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DMN55D0UT Document number: DS31330 Rev. 8 - 2 

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**DMN55D0UT** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/dmn55d0ut-7/mosfet-n-ch-50v-sot-523-3/dp/2543541)
---

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