# Power MOSFET, N Channel, 40 V, 14.4 A, 5500 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3943615RL/)

**URL**: https://novapart.co/products/DMN4008LFG-7/power-mosfet-n-channel-40-v-144-a-5500-ohm-powerdi
**SKU**: DMN4008LFG-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2510
**Stock**: 100+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 14.4A |
| Drain Source On State Resistance | 5500µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943615RL/)

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DMN4008LFG<br>40V N-CHANNEL ENHANCEMENT MODE MOSFET<br>POWERDI [®]<br>Product Summary Features and Benefits<br>• Low RDS(ON) – ensures on state losses are minimized<br>V(BR)DSS RDS(ON) max  TAI = +25°C D max • Density End Products Small Form Factor Thermally Efficient Package Enables Higher<br>7.5mΩ @ VGS = 10V  14.4A<br>40V  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling<br>10mΩ @ VGS = 4.5V  12.5A<br>Smaller End Product<br>• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)<br>Description and Applications  • Halogen and Antimony Free. “Green” Device (Note 3)<br>• Qualified to AEC-Q101 Standards for High Reliability<br>This MOSFET has been designed to minimize the on-state resistance<br>(RDS(ON)) and yet maintain superior switching performance, making it  Mechanical Data<br>ideal for high efficiency power management applications.  ®<br>• Case: POWERDI 3333-8<br>• Backlighting<br>• Power Management Functions  • Case Material: Molded Plastic, "Green" Molding Compound.<br>• DC-DC Converters  UL Flammability Classification Rating 94V-0<br>• Moisture Sensitivity: Level 1 per J-STD-020<br>• Terminal Connections Indicator: See diagram<br>• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.<br>: DIODES & . oy<br>Solderable per MIL-STD-202, Method 208<br>• Weight: 0.072 grams (approximate)<br>POWERDI®3333-8 D<br>S Pin 1<br>S<br>S<br>G<br>G<br>D<br>D<br>D<br>Ss D 2 &<br>S<br>Bottom View  Top View<br>Equivalent Circuit<br>Ordering Information (Note 4)<br>Part Number Case Packaging<br>DMN4008LFG-7  POWERDI®3333-8  2000/Tape & Reel<br>DMN4008LFG-13  POWERDI®3333-8  3000/Tape & Reel<br>ADVANCE INFORMATION<br>NEW PRODUCT<br>**----- End of picture text -----**<br>


- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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N47<br>YYWW<br>**----- End of picture text -----**<br>


N47= Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 13 = 2013) WW = Week code (01 ~ 53) 

POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG Document number: DS36908  Rev. 2 - 2 

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July 2014 © Diodes Incorporated 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

## ~~**DMN4008LFG**~~ 

|~~**DMN4008LFG**~~<br>**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|~~**DMN4008LFG**~~<br>**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|~~**DMN4008LFG**~~<br>**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|~~**DMN4008LFG**~~<br>**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|~~**DMN4008LFG**~~<br>**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|~~**DMN4008LFG**~~<br>**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|40|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|14.4<br>11.6|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|19.2<br>15.4|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)|||IDM|90|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|3|A|
|Avalanche Current,L = 0.1mH|||IAS|38|A|
|Avalanche Energy,L = 0.1mH|||EAS|75|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 5)||PD|1.0|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steadystate|RθJA|119|°C/W|
||t<10s||66||
|Total Power Dissipation(Note 6)||PD|2.3|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steadystate|RθJA|53|°C/W|
||t<10s||30||
|Thermal Resistance,Junction to Case(Note 6)||RθJC|6.1||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|40|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1|µA|VDS= 40V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **|||||||
|Gate Threshold Voltage<br>~~=.~~|VGS(th)<br>~~=.~~|1<br>~~=.~~|—<br>~~=.~~|3<br>~~=.~~|V<br>~~=.~~|VDS= VGS,ID= 250μA<br>~~=.~~|
|Static Drain-Source On-Resistance<br>~~=.~~|RDS (ON)<br>~~=.~~|—<br>~~=.~~|5.5<br>~~=.~~|7.5<br>~~=.~~|mΩ<br>~~=.~~|VGS= 10V,ID= 10A<br>~~=.~~|
|||—<br>~~=.~~|7<br>~~=.~~|10<br>~~=.~~||VGS= 4.5V,ID= 8A<br>~~=.~~|
|||—<br>~~=.~~|—<br>~~=.~~|20<br>~~=.~~||VGS= 3.3V,ID= 6A<br>~~=.~~|
|Diode Forward Voltage<br>~~=.~~|VSD<br>~~=.~~|—<br>~~=.~~|0.7<br>~~=.~~|1.1<br>~~=.~~|V<br>~~=.~~|VGS= 0V,IS= 1A<br>~~=.~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~a~~<br>~~———~~<br>~~eee~~|||||||
|Input Capacitance<br>~~———~~<br>~~———~~|Ciss<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|3537<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~eee~~|pF<br>~~———~~<br>~~eee~~|VDS= 20V, VGS= 0V,<br>f = 1MHz<br>~~———~~<br>~~eee~~|
|Output Capacitance<br>~~———~~<br>~~———~~|Coss<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|257<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~eee~~|pF<br>~~———~~<br>~~eee~~||
|Reverse Transfer Capacitance<br>~~———~~<br>~~———~~|Crss<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|215<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~eee~~|pF<br>~~———~~<br>~~eee~~||
|Gate Resistance<br>~~———~~<br>~~———~~|Rg<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|0.9<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~eee~~|Ω<br>~~———~~<br>~~eee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~eee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~|Qg<br>~~a~~|—<br>~~a~~|34<br>~~a~~|—<br>~~eee~~|nC<br>~~eee~~|VDS= 20V, ID= 10A<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~———~~|Qg<br>~~a~~|—<br>~~a~~|74<br>~~a~~|—<br>~~eee~~|nC<br>~~eee~~||
|Gate-Source Charge<br>~~———~~|Qgs<br>~~a~~|—<br>~~a~~|10.2<br>~~a~~|—<br>~~eee~~|nC<br>~~eee~~||
|Gate-Drain Charge<br>~~———~~<br>~~—————~~|Qgd<br>~~a~~|—<br>~~a~~|12.5<br>~~a~~|—<br>~~eee~~<br>~~ee~~|nC<br>~~eee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~———~~<br>~~—————~~|tD(on)<br>~~a~~|—<br>~~a~~|8.2<br>~~a~~|—<br>~~eee~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~|VGS= 10V, VDS= 20V,<br>RG= 6Ω, ID= 10A<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~—————~~|tr<br>~~a~~|—<br>~~a~~|14.1<br>~~a~~|—<br>~~eee~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~—————~~|tD(off)|—|69.7|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—————~~|tf|—|24.4|—<br>~~ee~~|ns<br>~~ee~~||
|BodyDiode Reverse RecoveryTime<br>~~—————~~<br>~~1~~|trr<br>~~1~~|—<br>~~1~~|18.5<br>~~1~~|—<br>~~ee~~<br>~~1~~|nS<br>~~ee~~<br>~~1~~|IF= 10A, di/dt = 100A/μs<br>~~ee~~<br>~~1~~|
|BodyDiode Reverse RecoveryCharge<br>~~1~~|Qrr<br>~~1~~|—<br>~~1~~|12.0<br>~~1~~|—<br>~~1~~|nC<br>~~1~~||



8. Guaranteed by design. Not subject to product testing. 

POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG Document number: DS36908  Rev. 2 - 2 

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July 2014 © Diodes Incorporated 

**DMN4008LFG** 

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30.0 30<br>VGS = 10V VDS = 5.0V<br>27.0 fr 27 eee| eee<br>VGS = 4.5V<br>24.0 VGS = 4.0V 24<br>VGS = 3.0V<br>21.0 VGS = 3.5V 21<br>Foo. ees|||<br>18.0 18<br>TA = 150°C<br>15.0 15<br>TA = 125°C<br>12.0 a 12<br>TA = 85°C<br>9.0 Poo a e ee 9 en<br>TA = 25°C<br>6.0 Poo 6 e/aIRA<br>TA = -55°C<br>3.0 a V GS = 2.5V 3 7///sn<br>0.0 0<br>0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.014 0.04<br>ID = 10.0A<br>0.035<br>0.012<br>VGS = 3.3V ID = 8.0A<br>0.03<br>0.01 HEREa Pi ke!e TTTTT Eytt |<br>Ply<br>0.025<br>ALLL EL LE<br>0.008 0.02<br>VGS = 4.5V<br>0.015 CeCe<br>0.006 VGS = 10V<br>paseeeenee EEE EEL<br>0.01<br>0.004 ATTLELLLEL HE<br>0.005<br>0.002 LEE  EEL LLL 0 SanePP PEC<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.011 1.8<br>VGS = 10V<br>0.01 TET TA = 150 ° C Ton VGS  10= V<br>1.6 ID = 10A<br>0.009 SS TA = 125°C<br>VGS = 4.5V<br>0.008 es 1.4 Baan ID = 8.0A Va<br>TA = 85°C<br>0.0070.006 REE or 1.2 ee VIGSD = 6.0A  3.3= V<br>TA = 25°C<br>0.005 Saeeeenas e en 1 ALo<br>0.004 T A  = -55°C<br>0.8<br>SeeneG eee >2a<br>0.003 ee SO<br>0.002 CECE 0.6 “tte<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 Typical On-Resistance vs.<br>Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)<br> ID , DRAIN CURRENT (A)D<br> I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG Document number: DS36908  Rev. 2 - 2 

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July 2014 

© Diodes Incorporated 

**DMN4008LFG** 

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0.018 2.2<br>0.016<br>2<br>0.014 V GS   3.3= V<br>ID = 6.0A 1.8 ID = 1mA<br>0.012 POP RS<br>0.01 CCT VGS = 4.5V er 1.6 ARN I D = 250µA<br>ID = 8.0A<br>0.008 a e US<br>1.4<br>e TEE RN<br>0.006 V GS   10= V<br>Peete ID = 10A 1.2 NS<br>0.004 ae NS<br>1<br>0.002 inne SaeEEN<br>ttt ETT :<br>0 0.8<br>-50 EEE -25 0 25 50 75 100 125 150 -50 Pit -25 0 TEE 25 50 75 100 Ty 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation<br>vs. Ambient Temperature<br>30 yp 10000 pp<br>27<br>24 Ciss<br>oo ————<br>21<br>eee ———<br>18 TA = 150°C<br>| ice<br>15 ee T A = 125°C |cc TA = 85°C 1000 pT Tt<br>12<br>Ip TA = 25°C =<br>9 RR TA = -55°C <==<br>6 Coss<br>|e SSS<br>3 e/a == Crss<br>f = 1MHz<br>0 aT 100 PPE<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30 re 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 1000<br>VIDDS  10= = 20VA RLimitedDS(ON)<br>8 100<br>6 10<br>DC<br>P W  = 10s<br>4 1 PW = 1s<br>PW = 100ms<br>2 0.1 TJ(max) = 150°C PW = 10ms<br>TA = 25°C PW = 1ms<br>VGS = 10V<br>DUT on 1 * MRP BoardSingle Pulse PW = 100µs<br>0 0.01<br>0 10 20 30 40 50 60 70 80 0.01 0.1 1 10 100<br>Qg [, TOTAL GATE CHARGE ] (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge<br>Figure 12 SOA, Safe Operation Area<br>)Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(th)<br>R V<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG Document number: DS36908  Rev. 2 - 2 

4 of 6 **www.diodes.com** 

July 2014 © Diodes Incorporated 

**DMN4008LFG** 

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1<br>SSS D = 0.9<br>BE D = 0.7<br>ee D = 0.5<br>Py D = 0.3 AR ETI eer qi Pay<br>0.1 a D = 0.1 20<br>Se D = 0.05<br>D = 0.02<br>nA<br>0.01<br>D = 0.01<br>Se D = 0.005 R θJA (t) = r(t) * R θJA<br>Eee TT RθJA = 118°C/W |<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001 Pll FEF TIE  EET |<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

**==> picture [363 x 354] intentionally omitted <==**

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A 7a fe POWERDI ® 3333-8<br>A3 Dim Min  Max  Typ<br>tlooo ok A1 |a D  |ff 3.25  3.35  3.30<br>D ee E  3.2 ee 5 3 ee .35 3 eee .30<br>D2 Ff D2  2.22  ff 2.32  2.27<br>ee E2  1.56  ee 1.66  ee 1.61  ee<br>L ff A  0.75 ff 0.85 0.80<br>1 4 (4x) | A1  |ff 0 0.05 0.02<br>Pin 1 ID A3  −  −  0.203<br>b 0.27  0.37  0.32<br>y e b2 | | [| ff |<br>E b2  − − 0.20<br>(4x) | [| | [|<br>E2 Ff L  0.35  ff 0.45  0.40<br>8 5 L1 | L1 e  [| −− |[| −− 0.39 0.65<br>| [|<br>(3x) Z  −  −  0.515<br>ianleo ae |ee All Dimensions in mm  [| ee |  ee[|[| eee<br>Z (4x) e b (8x)<br>yout out<br>X<br>Dimensions  Value (in mm)<br>G C  0.650<br>G  0.230<br>G1  0.420<br>8 5<br>Y2 G1 Y  3.700<br>Y1<br>Y1  2.250<br>Y Y2  1.850<br>Y3  0.700<br>1 4 X  2.370<br>X2  0.420<br>Y3<br>ealT H H H O_L<br>> | ><br>X2 C<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout out** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG Document number: DS36908  Rev. 2 - 2 

5 of 6 **www.diodes.com** 

July 2014 © Diodes Incorporated 

**DMN4008LFG IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: CT A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated **www.diodes.com**[i] POWERDI is a registered trademark of Diodes Incorporated DMN4008LFG 6 of 6 July 2014 Document number: DS36908  Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN4008LFG-7/power-mosfet-n-channel-40-v-144-a-5500-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn4008lfg-7/mosfet-n-ch-40v-14-4a-powerdi/dp/3943615RL)
---

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