# Power MOSFET, N Channel, 30 V, 750 mA, 0.46 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3127339RL/)

**URL**: https://novapart.co/products/DMN3730U-7/power-mosfet-n-channel-30-v-750-ma-046-ohm-sot-23
**SKU**: DMN3730U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1340
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:750mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.46ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950mV;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 710mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 710mW |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.46ohm |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 750mA |
| Drain Source On State Resistance | 0.46ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 950mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127339RL/)

## **A Product Line of Diodes Incorporated DMN3730U** | **30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**Max RDS(on)**|**ID Max**(Note 5)<br>TA= 25°C|
|30V|460mΩ@ VGS= 4.5V|0.94A|
||560mΩ@ VGS= 2.5V|0.85A|



## **Features and Benefits** 

- Low VGS(th), can be driven directly from a battery 

- Low RDS(on) 

- **“Lead Free”, RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free. "Green" Device (Note 2)** 

- **ESD Protected Gate 2kV** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Load switch 

- Portable applications 

   - Terminals: Finish-Matte Tin. 

   - Weight: 0.08 grams (approximate) 

- Power Management Functions 

**==> picture [454 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
Drain<br>SOT23<br>D<br>Body<br>Gate Diode<br>Gate<br>Protection Source G S<br>Diode<br>g &@ él Oo<br>ESD PROTECTED TO 2kV Top View  Equivalent Circuit  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|
|---|---|---|---|---|
||||||
|**Part Number**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|DMN3730U-7|N3U|7|8|3,000|



Notes: 1. No purposefully added lead 

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 

3. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

N3U = Product Type Marking Code **N3U** YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) Date Code Key **Year 2011 2012 2013 2014 2015 2016 2017** ~~aSS~~ **Code** Y ~~ee~~ Z A B C D E **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ohtt~~ **Code** 1 ~~tf~~ 2 3 4 5 6 7 8 9 ~~tt~~ O N D 

1 of 7 **www.diodes.com** 

DMN3730U Datasheet number: DS35308 Rev. 2 - 2 

July 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**DMN3730U** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|
||||||
|**Characteristic **|||**Symbol **<br>**Value**|**ue **<br>**Unit **|
|Drain-Source Voltage|||VDSS<br>30|V|
|Gate-Source Voltage|||VGSS<br>±8|V|
|Continuous Drain Current|Steady<br>State|TA = 25°C (Note 5)<br>TA = 85°C (Note 5)<br>TA = 25°C(Note 4)|ID<br>0.94<br>0.68<br>0.75|0.94<br>0.68<br>0.75<br>A|
|Pulsed Drain Current(Note 6)|||IDM<br>10|A|



**Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||
|---|---|---|---|
|**Characteristic**||**Symbol **<br>**Value**|**ue**<br>**Unit**|
|Power Dissipation<br>(Note 4<br>(Note 5|Note 4)|PD<br>0.45<br>0.71|0.45<br>W|
||Note 5)||0.71<br>W|
|Thermal Resistance, Junction to Ambient<br>(Note 4<br>(Note 5|Note 4)|RθJA<br>275<br>177|°C/W|
||Note 5)||°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG<br>-55 to +150|-55 to +150<br>°C|



- Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 

   5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper 

   6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 

## **Thermal Characteristics** 

**==> picture [482 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 l 100 —=<br>90 Oe a A Single PulseRthja = 176C/WRthja(t) = Rthja*r(t) | RLimitedDS(ON) ee IPDW (A) @ = 1ms IPDW (A) @ = 100µs eal<br>80 CAIN AIEEE ET TJ - TA = P*Rthja (t) | 10 Ella eee eeeVl<br>ID (A) @<br>70 PW = 10ms<br>60 CAIN TIAL LATA ETE LTTE EI 1 LyaSU TTT IPDW (A) @ = 100ms POSN |<br>50<br>ID (A) @ DC<br>40 ATM FVII FATA EEL TELL 0.1 oe PRS ID TTT  (A) @<br>30 a N e esa| HE aee eweet105, SHSNN PW = 10µs<br>ID (A) @<br>PW = 1s<br>20 CHAI LTTISSMUTE LEME TTL Tl 0.01 ras PCH<br>TJ, (Max) = 150°C<br>10 CEA TINUESa TIT TA = 25°C esceesee EE<br>Single Pulse<br>0 IAL LUTE LEVINE FETE TTT 0.001 FePMCLL<br>0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100<br>T1, PULSE DURATION SECTION (sec) VDS, DRAIN-SOURCE VOLTAGE<br>Fig. 1 Single Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>**----- End of picture text -----**<br>


2 of 7 **www.diodes.com** 

DMN3730U Datasheet number: DS35308 Rev. 2 - 2 

July 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**DMN3730U** 

**==> picture [402 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 SSEEStsaa anthem mee meee ee egee ee ne<br>Lt A TO eaeet tt +}TT]+ tt 4} HH<br>A r(t) @ D=0.5 PTTa emsTNE es heeer ee<br>r(t) @ D=0.9<br>OM r(t) @ D=0.3 S caill NI a a A<br>0.1 FryeeeLAAee |ee) T A r(t) @ D=0.7 PriCEIiCCT<br>r(t) @ D=0.1<br>ESTELette e | | vei | Pri ~=6hF hPa CC CCeCr<br>a a ee ee |<br>r(t) @ D=0.05<br>Fine CERAM TTT HE TTTT<br>r(t) @ D=0.01<br>0.01 ay SOGeAAA U IIMMTTIOUMOUTLML ATTA I OROUONL(IAMOUTUIIIOMN LTT TTI TTLTOON<br>be EEEEEE<br>r(t) @ D=0.01<br>Se Eo EE<br>rT [TT] [ORT] SE ll<br>r(t) @ D=0.005 RθJA (t) = r(t)*RθJA<br>a LO RθJA = 176C/W ill<br>Duty Cycle, D = t1/t2<br>r(t) @ D=Single Pulse<br>0.001 ret THECECT i<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 3 Transient Thermal Resistance<br>R(t), TRANSIENT THERMAL RESISITANCE<br>**----- End of picture text -----**<br>


**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~G(R~~|**Symbol**<br>~~G(R~~|**Min**<br>~~G(R~~|**Typ **<br>~~G(R~~|**Max**<br>~~G(R~~|**Unit**<br>~~G(R~~<br>~~OO~~|**Test Condition**<br>~~G(R~~|
|**OFF CHARACTERISTICS**<br>~~OO~~<br>~~|~~<br>~~I~~|||||||
|Drain-Source Breakdown Voltage<br>~~GO~~<br>~~GD~~|BVDSS<br>~~GO~~<br>~~GD~~|30<br>~~GO~~<br>~~I~~<br>~~GD~~|-<br>~~GO~~<br>~~GO~~|-<br>~~GO~~<br>~~GO~~|V<br>VGS= 0V<br>~~GO~~<br>~~GO~~|= 0V,ID= 10μA<br>~~GO~~|
|Zero Gate Voltage Drain Current<br>~~GD~~<br>~~GD~~|IDSS<br>~~GD~~<br>~~GD~~|-<br>~~I~~<br>~~GD~~<br>~~GD~~|-<br>~~GD~~<br>~~GO~~|1<br>~~GD~~<br>~~GO~~<br>~~(O(n~~|μA<br>VDS= 30V<br>~~GD~~<br>~~GO~~<br>~~(O(n~~|= 30V,VGS= 0V<br>~~GD~~<br>~~(O(n~~|
|Gate-Source Leakage<br>~~GD~~|IGSS<br>~~GD~~|-<br>~~GD~~|-<br>~~GO~~|3<br>~~GO~~<br>~~(O(n~~|μA<br>VGS= ±8V<br>~~GO~~<br>~~(O(n~~|= ±8V,VDS= 0V<br>~~(O(n~~|
|**ON CHARACTERISTICS**<br>~~(O(n~~<br>~~|~~<br>~~I~~<br>~~|~~<br>~~Pe~~|||||||
|Gate Threshold Voltage<br>~~GO~~|VGS(th)<br>~~GO~~|0.45<br>~~GO~~<br>~~I~~|-<br>~~GO~~<br>~~|~~|0.95<br>~~GO~~<br>~~|~~|V<br>VDS= V<br>~~GO~~<br>~~Pe~~|= VGS,ID= 250μA<br>~~GO~~<br>~~Pe~~|
|Static Drain-Source On-Resistance (Note 7)|Static Drain-Source On-Resistance (Note 7)<br>RDS(on)|-<br>~~I~~<br>~~I~~|-<br>~~|~~<br>~~|~~<br>~~|~~|460<br>~~|~~<br>~~|~~|mΩ<br>VGS= 4.5V<br>VGS= 2.5V<br>VGS= 1.8V<br>~~Pe~~<br>~~PF~~<br>~~Pp~~|= 4.5V,ID= 200mA<br>~~Pe~~|
|||||560<br>~~|~~<br>~~|~~<br>~~|~~||= 2.5V,ID= 100mA<br>~~Pe~~|
|||||730<br>~~|~~<br>~~|~~||= 1.8V,ID= 75mA|
|Forward Transfer Admittance<br>~~GD~~<br>~~GD~~||Yfs|<br>~~GD~~<br>~~GD~~|40<br>~~GD~~<br>~~I~~<br>~~GD~~|-<br>~~|~~<br>~~GD~~|-<br>~~|~~<br>~~GD~~<br>~~(O(n~~|mS<br>VDS= 3V<br>~~Pp~~<br>~~GD~~<br>~~(O(n~~|= 3V,ID= 10mA<br>~~GD~~<br>~~(O(n~~|
|Diode Forward Voltage(Note 7)<br>~~GD~~|VSD<br>~~GD~~|-<br>~~I~~<br>~~GD~~|0.7|1.2<br>~~(O(n~~|V<br>VGS= 0V<br>~~(O(n~~|= 0V,IS= 300mA<br>~~(O(n~~|
|**DYNAMIC CHARACTERISTICS (Note 8)**<br>~~GD~~<br>~~(O(n~~<br>~~|~~|||||||
|Input Capacitance<br>~~GO~~|Ciss<br>~~GO~~|-<br>~~GO~~|64.3<br>~~GO~~|-<br>~~GO~~|pF<br>VDS= 25V, V<br>f = 1.0MHz<br>pF<br>pF<br>~~GO~~<br>~~GG~~<br>~~GO~~<br>~~(O(n~~|= 25V, VGS= 0V,<br>f = 1.0MHz<br>~~(O(n~~|
|Output Capacitance<br>~~GG~~|Coss<br>~~GG~~|-<br>~~GG~~|6.1<br>~~GG~~<br>~~I~~|-<br>~~GG~~<br>~~I~~|||
|Reverse Transfer Capacitance<br>~~GO~~|Crss<br>~~GO~~|-<br>~~GO~~<br>~~GO~~|4.5<br>~~GO~~<br>~~I~~<br>~~GO~~|-<br>~~GO~~<br>~~I~~<br>~~I~~|||
|Gate Resistance<br>~~GO~~|Rg<br>~~GO~~|-<br>~~GO~~<br>~~GO~~|70<br>~~I~~<br>~~GO~~<br>~~GO~~|-<br>~~I~~<br>~~GO~~<br>~~I~~|Ω<br>VDS= 0V<br>~~GO~~<br>~~(O(n~~|= 0V,VGS= 0V,f = 1MHz<br>~~GO~~<br>~~(O(n~~|
|Total Gate Charge<br>~~eG~~|Qg<br>~~eG~~|-<br>~~GO~~<br>~~eG~~|1.6<br>~~GO~~<br>~~eG~~|-<br>~~I~~<br>~~eG~~|nC<br>VGS= 4.5V, V<br>ID= 1A<br>nC<br>nC<br>~~(O(n~~<br>~~eG~~<br>~~a~~<br>~~GO~~|= 4.5V, VDS= 15V,<br>= 1A<br>~~(O(n~~|
|Gate-Source Charge<br>~~a~~|Qgs<br>~~a~~|-<br>~~a~~|0.2<br>~~a~~|-<br>~~a~~|||
|Gate-Drain Charge<br>~~GO~~|Qgd<br>~~GO~~|-<br>~~GO~~<br>~~I~~|0.2<br>~~GO~~<br>~~I~~|-<br>~~GO~~<br>~~I~~|||
|Turn-On DelayTime<br>~~GO~~|tD(on)<br>~~GO~~|-<br>~~GO~~<br>~~I~~|3.5<br>~~GO~~<br>~~I~~|-<br>~~GO~~<br>~~I~~|ns<br>VDS= 10V, I<br>VGS= 10V, R<br>ns<br>ns<br>ns<br>~~GO~~<br>~~GG~~<br>~~a~~<br>~~ee~~|= 10V, ID = 1A<br>= 10V, RG= 6Ω|
|Turn-On Rise Time<br>~~GG~~|tr<br>~~GG~~|-<br>~~I~~<br>~~GG~~|2.8<br>~~I~~<br>~~GG~~|-<br>~~I~~<br>~~GG~~|||
|Turn-Off DelayTime<br>~~a~~|tD(off)<br>~~a~~<br>~~GE~~|-<br>~~a~~<br>~~GO~~|38<br>~~a~~<br>~~GO~~|-<br>~~a~~|||
|Turn-Off Fall Time<br>~~ee~~|tf<br>~~ee~~<br>~~GE~~|-<br>~~ee~~<br>~~GO~~|13<br>~~ee~~<br>~~GO~~|-<br>~~ee~~|||



3 of 7 **www.diodes.com** 

DMN3730U Datasheet number: DS35308 Rev. 2 - 2 

July 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**==> picture [492 x 681] intentionally omitted <==**

**----- Start of picture text -----**<br>
DMN3730U<br>2.0 ” VGSVGS = 4.5V = 10V 2.0 VDS = 5V<br>VGS = 3.0V<br>1.5 V GS  = 2.5V 1.5<br>VGS = 2.0V<br>VGS = 1.5V<br>1.0 1.0<br>0.5 0.5 TA = 150°C<br>TA = 125°C TA = 25°CTA = 85°C<br>TA = -55°C<br>0 0 [|<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 4 Typical Output Characteristic Fig. 5  Typical Transfer Characteristic<br>0.8 0.8<br>VGS = 4.5V<br>0.6 0.6 TA = 150°C<br>TA = 125°C<br>VGS = 1.8V TA = 85°C<br>0.4 V GS  = 2.5V 0.4<br>sre VGS = 4.5V ———_—| TA = 25°C<br>0.2 0.2 TA = -55 ° C<br>0 0<br>0 0.4 0.8 1.2 1.6 2 0 0.25 0.5 0.75 1 1.25 1.5<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 6  Typical On-Resistance  Fig. 7 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 0.8<br>VGS = 4.5V<br>ID = 1.0A<br>1.4<br>VGS = 2.5V 0.6<br>ID = 500mA<br>1.2 VGS = 2.5V<br>ID = 500mA<br>0.4<br>1.0<br>VGS = 4.5V<br>ID = 1.0A<br>0.2<br>0.8<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 8 On-Resistance Variation with Temperature Fig. 9 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( ,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)Ω<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMN3730U Datasheet number: DS35308 Rev. 2 - 2 

July 2011 © Diodes Incorporated 

**A Product Line of** 

**Diodes Incorporated** 

**DMN3730U** 

**==> picture [482 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2 2.0<br>1.0<br>1.6<br>TA = 25°C<br>0.8<br>ID = 1mA 1.2<br>0.6<br>ID = 250µA 0.8<br>0.4<br>0.4<br>0.2<br>0 0 J<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 10 Gate Threshold Variation vs. Ambient Temperature Fig. 11 Diode Forward Voltage vs. Current<br>100 10,000<br>C iss<br>——————— ——————<br>1,000 TA = 150°C<br>T A  = 125°C<br>10 Coss 100<br>C rss TA = 85°C<br>Sanne TT<br>10<br>T A  = 25°C<br>f = 1MHz ———<br>1 1<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 13 Typical Leakage Current<br>Fig. 12 Typical Total Capacitance<br>vs. Drain-Source Voltage<br>8<br>6 V DS = 15V<br>ID = 1A<br>4<br>2<br>0<br>0 0.5 1 1.5 2 2.5 3<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 14 Gate-Charge Characteristics<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>C, CAPACITANCE (pF) , LEAKAGE CURRENT (nA)<br>IDSS<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMN3730U Datasheet number: DS35308 Rev. 2 - 2 

July 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated DMN3730U** | 

## **Package Outline Dimensions** 

**==> picture [349 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
A SOT23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>B C<br>C 2.30  2.50  2.40<br>D  0.89  1.03  0.915<br>F  0.45  0.60  0.535<br>H BESS G 1.78  2.05  1.83<br>pel === H  2.80  3.00  2.90<br>J 0.013 0.10  0.05<br>K M<br>K1 K  0.903 1.10  1.00<br>D K1  -  -  0.400<br>J F G L L  0.45  0.61  0.55<br>M  0.085 0.18  0.11<br>α 0°  8°  -<br>All Dimensions in mm<br>( Gy ; [| {[  f[|]<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

**==> picture [185 x 110] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Z<br>aera C<br>X E<br>| FyKi EP<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Z**|2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



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DMN3730U Datasheet number: DS35308 Rev. 2 - 2 

July 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ~~ZETEX~~ **DMN3730U** | 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

**LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated **www.diodes.com** 

1 of 7 **www.diodes.com** 

DMN3730U Datasheet number: DS35308 Rev. 2 - 2 

July 2011 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN3730U-7/power-mosfet-n-channel-30-v-750-ma-046-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn3730u-7/mosfet-n-ch-30v-0-75a-sot23/dp/3127339RL)
---

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