# Dual MOSFET, N Channel, 30 V, 30 V, 350 mA, 350 mA, 2.4 ohm

![Product image](https://novapart.co/image/farnell:3405241/)

**URL**: https://novapart.co/products/DMN33D9LV-7A/dual-mosfet-n-channel-30-v-350-ma-24-ohm
**SKU**: DMN33D9LV-7A
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.0920
**Stock**: 1000+
**Lead Time**: 293 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOT-563 |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 430mW |
| Power Dissipation P Channel | 430mW |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 350mA |
| Continuous Drain Current Id P Channel | 350mA |
| Drain Source On State Resistance N Channel | 2.4ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405241/)

**DMN33D9LV** 

**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|30V|3Ω@VGS= 4.5V|350mA|
||7Ω@VGS= 2.5V||



## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Motor Control 

- Power Management Functions 

- DC-DC Converters 

- Backlighting 

**==> picture [138 x 82] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT563<br>~<br>ESD Protected   “<br>Top View<br>**----- End of picture text -----**<br>


## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: SOT563 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 3 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 O **e3** 

- Weight: 0.006 grams (Approximate) D1 D2 6 A 

- S1 Gate Protection s2 Top View 

- Internal Schematic Pin Out 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|DMN33D9LV-7|34B|7|8|3,000|
|DMN33D9LV-7A|34B|7|8|3,000|
|DMN33D9LV-13|34B|13|8|10,000|
|DMN33D9LV-13A|34B|13|8|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

|**Marking Informationg Information Information**|**Marking Informationg Information Information**|**Marking Informationg Information Information**|**Marking Informationg Information Information**|**Marking Informationg Information Information**|**Marking Informationg Information Information**|**Marking Informationg Information Information**|**Marking Informationg Information Information**|**Marking Informationg Information Information**|**Marking Informationg Information Information**||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||DMN33D9LV-7/-13|||||||||||DMN33D9LV-7A/-13A (Note 5)||||||||||DMN33D9LV-7A/-13A (Note 5)|||||||||||||
||||||||||||||6|||5||4|||||||||||||||||
|||D1|||G2|||S 2|||||D1|||G2||S2|||||||||||||||||
|||||||||||||||||||||||||34B = Product Type Marking Code|||||||||||
||||34B  YM||||||||||34B||||YM|||YM||||YM = Date Code Marking<br>Y = Year (ex: G = 2019)|||||||||||
|||||||||||||||||||||||||M = Month (ex: 9 = September)|||M = Month (ex: 9 = September)|M = Month (ex: 9 = September)|||||||
|||S 1|||G1|||D2|||||S1|||G 1||D 2|||||||||||||||||
||||||||||||||1|||2||3|||||||||||||||||
|Date CodeKey|||||||||||||||||||||||||||||||||||
|**Year**|||||**2019**|||||||**2020**|||**2021**|||||||**2022**||||**2023**||||**2024**|||**2025**||
|**Code**|||||G|||||||H||||I||||||J||||K||||L||||M|
||||||||||||||||||||||||||||||||||||
|**Month**||||**Jan**||||**Feb**||||**Mar**|**Apr**|||**May**||||**Jun**||||**Jul**||**Aug**||**Sep**||**Oct**||**Nov**||**Dec**|
|**Code**||||1||||2||||3|4||||5||||6|||7||8||9||O||N||D|



Note: 5. Part number with suffix 7A and 13A designates devices marked with a Pin 1 indicator. There is no other difference between both devices. 

1 of 6 

DMN33D9LV Document number: DS41900  Rev. 3 - 2 

October 2019 © Diodes Incorporated 

**www.diodes.com** 

**DMN33D9LV** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|350<br>200|mA|
|Maximum Continuous BodyDiode Forward Current (Note 6)|||IS|0.5|A|
|Pulsed Drain Current (10µs Pulse, DutyCycle = 1%)|||IDM|0.8|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|0.43|W|
||TA= +70°C||0.20||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|288|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~Ce~~|**Symbol**<br>~~Ce~~<br>~~ef~~|**Min**<br>~~Ce~~<br>~~ef~~<br>~~te~~|**Typ **<br>~~Ce~~<br>~~te~~|**Max**<br>~~Ce~~|**Unit**<br>~~Ce~~|**Test Condition**<br>~~Ce~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~ef~~<br>~~te~~<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|30<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 1mA<br>~~ee~~|
|Zero Gate Voltage Drain Current                     @TC= +25°C<br>~~rp~~|IDSS<br>~~rp~~|—<br>~~rp~~|—<br>~~rp~~|1<br>~~rp~~|μA<br>~~rp~~|VDS= 30V, VGS= 0V<br>~~rp~~|
|Gate-Source Leakage<br>~~rp~~|IGSS<br>~~rp~~|—<br>~~rp~~|—<br>~~rp~~|±10<br>~~rp~~|μA<br>~~rp~~|VGS= ±16V, VDS= 0V<br>~~rp~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~I GD~~<br>~~(OU(~~|||||||
|Gate Threshold Voltage<br>~~I~~|VGS(TH)<br>~~I~~<br>~~I GD~~|0.8<br>~~I~~<br>~~GD~~|—<br>~~I~~<br>~~(OU~~|1.4<br>~~I~~<br>~~(OU~~|V<br>~~I~~<br>~~(OU~~|VDS= 3V, ID= 100μA<br>~~I~~<br>~~(~~|
|Static Drain-Source On-Resistance<br>~~s==-6——~~|RDS(ON)<br>~~I GD~~<br>~~s==-6——~~<br>~~I~~|—<br>~~GD~~<br>~~s==-6——~~|0.2<br>~~(OU~~<br>~~s==-6——~~|2.4<br>~~(OU~~<br>~~s==-6——~~|Ω<br>~~(OU ~~<br>~~s==-6——~~<br>~~I~~|VGS= 10V, ID= 250mA<br> ~~(~~<br>~~s==-6——~~|
|||—<br>~~s==-6——~~|0.3<br>~~s==-6——~~|3.0<br>~~s==-6——~~||VGS= 4.5V, ID= 250mA<br>~~s==-6——~~|
|||—<br>~~s==-6——~~<br>~~———~~|0.3<br>~~s==-6——~~<br>~~———~~|5.0<br>~~s==-6——~~<br>~~———~~||VGS= 4.0V, ID= 10mA<br>~~s==-6——~~|
|||—<br>~~s==-6——~~<br>~~———~~<br>~~I~~|0.7<br>~~s==-6——~~<br>~~———~~<br>~~ID~~|7.0<br>~~s==-6——~~<br>~~———~~<br>~~I~~||VGS= 2.5V, ID= 10mA<br>~~s==-6——~~<br>~~(~~|
|Diode Forward Voltage<br>~~ID~~|VSD<br>~~ID~~<br>~~I~~|—<br>~~ID~~<br>~~I~~|0.8<br>~~ID~~<br>~~ID~~|1.2<br>~~ID~~<br>~~I~~|V<br>~~ID~~<br>~~I~~|VGS= 0V, IS= 115mA<br>~~ID~~<br>~~(~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~I~~<br>~~I~~<br>~~ID I~~<br>~~I(~~<br>~~eeesesee~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|48<br>~~es~~<br>~~es~~|—<br>~~es~~<br>~~es~~|pF<br>~~es~~<br>~~ee~~|VDS= 5V, VGS= 0V,<br>f = 1.0MHz<br>~~es~~<br>~~eee~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|11<br>~~es~~<br>~~es~~|—<br>~~es~~<br>~~es~~|pF<br>~~es~~<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~es~~<br>~~———~~|Crss<br>~~es~~<br>~~ee~~<br>~~I~~|—<br>~~es~~<br>~~ee~~|8<br>~~es~~<br>~~es~~|—<br>~~es~~<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~ee~~<br>~~ee~~||
|Total Gate Charge(VGS= 4.5V)<br>~~a~~<br>~~———~~|Qg<br>~~ee~~<br>~~a~~<br>~~I~~|—<br>~~ee ~~<br>~~a~~|0.55<br> ~~es ~~<br>~~a~~|—<br> ~~es ~~<br>~~a~~<br>~~ee~~|nC<br> ~~ee~~<br>~~a~~<br>~~ee~~|VGS= 10V, VDS= 10V,<br>ID= 250mA<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~———~~|Qg<br>~~I~~|—|1.23|—<br>~~ee~~|nC<br>~~ee~~||
|Gate-Source Charge<br>~~———~~|Qgs<br>~~I~~|—|0.14|—<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~———~~<br>~~———~~|Qgd<br>~~I~~<br>~~I~~|—<br>~~I~~|0.14<br>~~I~~|—<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||
|Turn-On Delay Time<br>~~———~~<br>~~nn~~<br>~~———~~|tD(ON)<br>~~I~~<br>~~nn~~<br>~~I~~|—<br>~~nn~~<br>~~I~~|2.9<br>~~nn~~<br>~~I~~|—<br>~~ee~~<br>~~nn~~<br>~~ee~~|ns<br>~~ee~~<br>~~nn~~<br>~~ee~~|VDD= 30V, VGS= 10V,<br>RG= 25Ω, ID= 200mA<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~|tR<br>~~I~~|—<br>~~I~~|2.6<br>~~I~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~———~~|tD(OFF)<br>~~I~~|—<br>~~I~~|18.2<br>~~I~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~———~~|tF<br>~~I~~|—<br>~~I~~|13.6<br>~~I~~|—<br>~~ee~~|ns<br>~~ee~~||



8. Guaranteed by design. Not subject to product testing. 

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DMN33D9LV Document number: DS41900  Rev. 3 - 2 

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**DMN33D9LV** 

**==> picture [488 x 674] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0 1<br>VGS = 10V V     = 5.0VDS<br>0.9 V GS = 3.0V 0.9<br>0.8 VGS = 4.0V 0.8<br>0.7 tet VGS = 4.5V [A)] T [(] 0.7 Rye<br>0.6 eo [N] RE 0.6<br>VGS = 2.5V RU<br>0.5 Tf C 0.5 es a<br>0.4 | [IN] A 0.4 re)<br>R<br>D<br>0.3 , D 0.3<br>0.2 aaa VGS = 1.6V V GS = 1.8V VGS = 2.0V I 0.2 ee T   = 125°CA T   = 150°CA  i T   = 25°CAT   = 85°CA<br>0.1 0.1<br>T   = -55°CA<br>0.0 a 0 G e<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>2 VGS = 2.5V )( 0.6 V      = 4.5VGS<br>1.8<br>+t N [CE] 0.5 ELL<br>1.6 T [A] T   = 150°CA<br>1.4 I [S] S T   = 125°CA<br>0.4<br>1.2 Po O [N-RE] T   = 85°CA<br>1 EVE EE ET 0.3 oo T   = 25°CA<br>0.8 O [URCE] T   = -55°CA<br>ae 0.2 Perr<br>0.6 I [N-S]<br>VGS = 4.0V VGS = 4.5V VGS = 10V D [RA]<br>0.4<br>, ) 0.1 LL<br>0.2 sageeene O [N] (S EEEELEE<br>D<br>R<br>0 FELL 0 ELELL EEL<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>0.5<br>0.4 VGS = 4.5V<br>ID = 300mA<br>VGS  10= V<br>ID = 500mA<br>0.3<br>VGS  10= V<br>rite! IVDGS= 300mA= 4.5V | 0.2 Eebcbes I D = 500mA<br>eee 0.1 caannis<br>0<br>Tt -50 -25 0 25 50 75 100 125 150 | -50 Hest: -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>D<br>, DRAIN CURRENT (A)<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMN33D9LV Document number: DS41900  Rev. 3 - 2 

October 2019 © Diodes Incorporated 

**DMN33D9LV** 

**==> picture [484 x 678] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 1<br>) 1.8 P| | | ft tt fd 0.9 YE<br>( [V]<br>G [E] 1.6 0.8<br>T [A] O [L] VD 1.4 ffne tt tt I   = 1mAD tt [A)] (T [N] E 0.7 ee—<br>1.2 R 0.6<br>O [L] pfs | R I<br>HS 1 I   = 250µAD UC 0.5 T   = 150°CA<br>ER P| | Pee CE HP<br>T [H] 0.8 PoE Et pe R 0.4 T   = 125°CA WP]<br>T [E] 0.6 [OU] S 0.3 T   = 25°CA<br>G [A] S<br>, [h)][(t] GS 0.4 P| | | i |] ft I [,] 0.2 T   = 85°CA on T   = -55°CA<br>V 0.2 P| | | | | fd 0.1 — ITF]<br>Pty | yt Hh | f-<br>0 P| | tt | ft ft 0 OWS<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>T  , JUNCTION TEMPERATURE (J C) V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 7 Gate Threshold Variation vs. Junction Temperature Figure 8 Diode Forward Voltage vs. Current<br>100 10<br>f = 1MHz<br>C iss<br>—— FLEW<br>8<br>es | J<br>6<br>10 VDS = 10V<br>C oss ID  250m= A<br>weSSS 4 fVA<br>iL S| C rss J<br>eS y<br>2<br>1 ee 0<br>0 10 es 20 ee 30 0 A 0.2 0.4 0.6 0.8 1 1.2 1.4<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 9 Typical Junction Capacitance Figure 10 Gate Charge<br>1<br>D = 0.9<br>D = 0.7<br>D = 0.5<br>Treen<br>Pea D = 0.3 NE aOer= A ee<br>0.1<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>SHATCC<br>0.01<br>D = 0.01<br>D = 0.005 R RJA θJA(t) = r(t)  (t) = r(t) * R * RθJA JA<br>RR JAθJA  =  289 289 ℃癈 /W /W<br>a> | Duty Cycle, D = t1 / t2  nl<br>Duty Cycle, D = t1/ t2<br>D = Single Pulse<br>0.001<br>Evin ETT CUI TUITE TIN ETL I<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 11 Transient Thermal Resistance<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, SOURCE CURRENT (A)<br>, GATE-THRESHOLD VOLTAGE (V)  IS<br>GS(TH)<br>V<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>r(t), TRANSIENT THERMAL RESISTANCE<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>GS<br>**----- End of picture text -----**<br>


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DMN33D9LV Document number: DS41900  Rev. 3 - 2 

October 2019 © Diodes Incorporated 

**DMN33D9LV** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT563** 

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**----- Start of picture text -----**<br>
b<br>a a<br>SOT563<br>Dim  Min  Max  Typ<br>A  0.55  0.60  0.60<br>E E1 b  0.15  0.30  0.20<br>c  0.10 0.18 0.11<br>D  1.50 1.70 1.60<br>E  1.55 1.70 1.60<br>L E1  1.10 1.25 1.20<br>R.01<br>e  --  --  0.50<br>e c e1  0.90  1.10  1.00<br>L  0.10  0.30  0.20<br>o e1 e === a  8° 9° 7°<br>D All Dimensions in mm<br>A<br>— —_<br>ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT563<br>C X<br>Dimensions Value (in mm)<br>Y<br>C  0.500<br>C1  1.270<br>G  0.600<br>X  0.300<br>Y1 G C1<br>X1  1.300<br>Y  0.670<br>Y1  1.940<br>X1<br>tm Ee<br>a<br>a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

5 of 6 **www.diodes.com** 

DMN33D9LV Document number: DS41900  Rev. 3 - 2 

October 2019 © Diodes Incorporated 

**DMN33D9LV** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN33D9LV Document number: DS41900  Rev. 3 - 2 

October 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN33D9LV-7A/dual-mosfet-n-channel-30-v-350-ma-24-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn33d9lv-7a/mosfet-dual-n-ch-0-35a-30v-150deg/dp/3405241)
---

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