# Power MOSFET, N Channel, 28 V, 1.6 A, 0.073 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3943605/)

**URL**: https://novapart.co/products/DMN3150LW-7/power-mosfet-n-channel-28-v-16-a-0073-ohm-sot-323
**SKU**: DMN3150LW-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1050
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 28V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.6A |
| Drain Source On State Resistance | 0.073ohm |
| Gate Source Threshold Voltage Max | 940mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943605/)

**DMN3150LW** —— 

## **N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

## **Features** 

- Low On-Resistance: 

- RDS(ON) < 88mΩ @ VGS = 4.5V 

- RDS(ON) < 138mΩ @ VGS = 2.5V 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Mechanical Data** 

   - Case: SOT323 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 

   - Terminal Connections: See Diagram 

   - Weight: 0.006 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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SOT323<br>&®<br>Top View<br>**----- End of picture text -----**<br>


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D D<br>G<br>G S<br>&® 6 [J<br>S<br>Pin Configuration<br>Top View Internal Schematic<br> Information (Note 4)<br>Part Number Case Packaging<br>DMN3150LW-7  SOT323 3000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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31N = Product Type Marking Code<br>YM = Date Code Marking<br>31N<br>Y = Year (ex: D = 2016)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2008  ~  2016  2017  2018  2019  2020  2021  2022  2023<br>ee Code V  ~  D  E  F  G  H  I  J  K<br>a<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3 4  5 6 7  8 9 O N  D<br>———<br>YM<br>**----- End of picture text -----**<br>


1 of 5 **www.diodes.com** 

DMN3150LW Document number: DS31514 Rev. 2 - 2 

January 2016 © Diodes Incorporated 

**DMN3150LW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Drain Source Voltage|VDSS|28|V|
|Gate-SourceVoltage|VGSS|12|V|
|Drain Current (Note 5)                                                    TA= +25°C<br>TA= +70°C|ID|1.6<br>1.2|A|
|DrainCurrent (Note 5)<br>Pulsed|IDM|6.4|A|
|Body-Diode Continuous Current(Note 5)|IS|1.5|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|350|mW|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 5)|RJA|357|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6)**|||||||
|Drain-SourceBreakdown Voltage|BVDSS|28|||V|VGS= 0V,ID= 250A|
|Zero Gate Voltage Drain Current<br>~~OG~~|IDSS<br>~~OG~~|<br>~~OG~~|<br>~~OG~~|800<br>~~OG~~|nA<br>~~OG~~|VDS= 28V,VGS= 0V<br>~~OG~~|
|Gate-Body Leakage<br>~~OG~~|IGSS<br>~~OG~~|<br>~~OG~~|<br>~~OG~~|80<br>800<br>~~OG~~|nA<br>~~OG~~|VGS= ±12V, VDS= 0V<br>VGS= ±19V,VDS= 0V<br>~~OG~~|
|**ON CHARACTERISTICS(Note 6)**|||||||
|Gate Threshold Voltage<br>~~LLL~~|VGS(TH)<br>~~LLL~~|0.62<br>~~LLL~~|0.94<br>~~LLL~~|1.4<br>~~LLL~~|V<br>~~LLL~~|VDS= VGS,ID= 250A<br>~~LLL~~|
|Static Drain-Source On-Resistance<br>~~LLL~~|RDS(ON)<br>~~LLL~~<br>~~a~~|<br><br>~~LLL~~<br>~~a~~|73<br>115<br>~~LLL~~<br>~~a~~|88<br>138<br>~~LLL~~<br>~~a~~|m<br>~~LLL~~<br>~~a~~|VGS= 4.5V, ID= 1.6A<br>VGS= 2.5V,ID= 1.2A<br>~~LLL~~|
|Forward Transconductance<br>~~—————~~||Yfs|<br>~~—————~~<br>~~a~~|<br>~~—————~~<br>~~a~~|5.4<br>~~—————~~<br>~~a~~|<br>~~—————~~<br>~~a~~|S<br>~~—————~~<br>~~a~~|VDS= 5V,ID= 2.7A<br>~~—————~~|
|Source-Drain Diode Forward Voltage<br>~~—————~~|VSD<br>~~—————~~<br>~~a~~<br>~~a~~|<br>~~—————~~<br>~~a~~<br>~~a~~|<br>~~—————~~<br>~~a~~<br>~~a~~|1.16<br>~~—————~~<br>~~a~~<br>~~a~~|V<br>~~—————~~<br>~~a~~|VGS= 0V,IS= 1.5A<br>~~—————~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~a a~~<br>~~—_——~~<br>~~a~~|||||||
|Input Capacitance<br>~~—_——~~|Ciss<br>~~—_——~~<br>~~a~~|<br>~~—_——~~<br>~~a~~|305<br>~~—_——~~<br>~~a~~|<br>~~—_——~~<br>~~a~~|pF<br>~~—_——~~|VDS= 5V, VGS= 0V<br>f = 1.0MHz<br>~~—_——~~|
|Output Capacitance<br>~~—_——~~|Coss<br>~~—_——~~<br>~~a~~|<br>~~—_——~~<br>~~a~~|74<br>~~—_——~~<br>~~a~~|<br>~~—_——~~<br>~~a~~|pF<br>~~—_——~~||
|Reverse Transfer Capacitance<br>~~—_——~~|Crss<br>~~—_——~~<br>~~a~~|<br>~~—_——~~<br>~~a~~|48<br>~~—_——~~<br>~~a~~|<br>~~—_——~~<br>~~a~~|pF<br>~~—_——~~||



7. Guaranteed by design. Not subject to product testing. 

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DMN3150LW Document number: DS31514 Rev. 2 - 2 

January 2016 © Diodes Incorporated 

**DMN3150LW** CT 

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8 8<br>/ ; | Ve[ = 2 fg- t5V VDS = 5V l/<br>Pulsed<br>6 6<br></<br>5<br>te " Maa 4 50 B<br>4 4<br>oF IS Veg = 10V a<br>. Wy a 3<br><¢ |<br>| 2 anne————— = 1.8) 2 cof<br>0 Yfop 0 fe ZZ Ty=-55°C<br>005 11 5 2 25 3 35 4 45 5 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1  Typical Output Characteristics Fig. 2  Typical Transfer Characteristics<br>0.16<br>f = 1MHz f = 1 MHz<br>T T A A= 25  = 25 [o] C  癈<br>ett tty yy 1,000 ee<br>0.12 i it|te77 >Soa ;ti“(‘(<iézdLSSS<br>Ciss<br>V GS  = 2.5V<br>0.08 See VO<br>ee 100 See<br>VGS = 4.5V<br>VGS = 10V<br>0.04 ett re a,es | Coss<br>Crss<br>fF | t ttyft dd Soee =<br>0 PELE ELLE a | | |<br>0 2 4 6 8 (0) 5 10 15 20<br>ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 3  On-Resistance  Fig. 4  Typical Total Capacitance<br>vs. Drain Current and Gate Voltage<br>1.4 1.6<br>Wwe| 1.2 iii titL. 1.4 LELLELY|<br>:<br>weTw 2 1.0 SS 1.2 V I GSD  = 1.6A  = 4.5V V4 Wa<br>b 0.8 SK 1.0 A<br>pe  oS 0.6 0.8<br>3 A Seana<br>8 NS 4<br>0.4 0.6<br>- 50 - 25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>Ta AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (C)( [o] C)<br>Fig. 5 Gate Threshold Voltage vs. Ambient Temperature Fig. 6 Normalized Static Drain-Source On-Resistance<br>vs. Ambient Temperature<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(on)<br>R<br>DS(ON)<br>, STATIC DRAIN-SOURCE<br>R ON-RESISTANCE (NORMALIZED)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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DMN3150LW Document number: DS31514 Rev. 2 - 2 

January 2016 © Diodes Incorporated 

**DMN3150LW** oo 

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## **Package Outline Dimensions** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

## **SOT323** 

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D<br>SOT323<br>A2 Dim  Min  Max  Typ<br>| | |<br>; A1  | 0.00 tf 0.10 | 0.05 |<br>or c a a A2 b  00..2905 1.0.4000 ee 00..9530<br>| |fT<br>A1 e L a c  0.10 0.18 ee 0.11<br>| D  |fT 1.80 2.20 2.15<br>E  2.00 2.20 2.10<br>b a ee<br>E1  1.15 1.35 1.30<br>|| e 0.650 BSC<br>e1  1.20 1.40 1.30<br>———o|| |a F L  |[|fT 00..23755 00.47.405 00.42.305<br>a a 8°<br>E | E1 re All Dimensions in mm<br>- —— 4—_ - |<br>|<br>| sd<br>F e1<br>**----- End of picture text -----**<br>


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DMN3150LW Document number: DS31514 Rev. 2 - 2 

January 2016 © Diodes Incorporated 

**DMN3150LW** 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. 

## **SOT323** 

|Y1<br>G<br>Y<br>X<br>C<br>f~~ee~~<br>~~on~~ ~~i"~~|**Dimensions**<br>**Value**<br>**(in mm)**<br>**C**<br>0.650<br>**G**<br>1.300<br>**X**<br>0.470<br>**Y**<br>0.600<br>**Y1**<br>2.500<br>——-||
|---|---|---|
|**IMPORTANT NOTICE**|||
|DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,|DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,||
|INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE|||
|(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).|||



Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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DMN3150LW Document number: DS31514 Rev. 2 - 2 

January 2016 © Diodes Incorporated 



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---

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