# Power MOSFET, N Channel, 30 V, 270 mA, 1.3 ohm, SOT-523, Surface Mount ![Product image](https://novapart.co/image/farnell:3943603/) **URL**: https://novapart.co/products/DMN313DLT-7/power-mosfet-n-channel-30-v-270-ma-13-ohm-sot-523 **SKU**: DMN313DLT-7 **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.0410 **Stock**: 1000+ **Lead Time**: 106 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 280mW | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 4V | | Transistor Case Style | SOT-523 | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 270mA | | Drain Source On State Resistance | 1.3ohm | | Gate Source Threshold Voltage Max | 1.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3943603/) **DMN313DLT** | **N-CHANNEL ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---| |||| |V(BR)DSS|RDS(ON)|ID
TA= 25°C| |30V|2Ω @ VGS= 4V|270mA| ||3.2Ω @ VGS= 2.5V|210mA| ## **Features and Benefits** - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Lead Free By Design/RoHS Compliant (Note 1) - • ESD Protected up to 2kV - "Green" Device (Note 2) - Qualified to AEC-Q101 Standards for High Reliability ## **Description and Applications** This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - Backlighting - DC-DC Converters - Power management functions ## **Mechanical Data** - Case: SOT-523 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 - Terminal Connections: See Diagram - Weight: 0.002 grams (approximate) **==> picture [20 x 7] intentionally omitted <==** **----- Start of picture text -----**
Drain
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**==> picture [415 x 178] intentionally omitted <==** **----- Start of picture text -----**
SOT-523
D
Gate
Gate
Protection Source G S
Diode
(La) ay
ESD PROTECTED TO 2kV Top View Equivalent Circuit Top View
Pin-Out
Information (Note 3)
Part Number Case Packaging
DMN313DLT-7 SOT-523 3000 / Tape & Reel
**----- End of picture text -----**
## **Ordering Information** (Note 3) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. ## **Marking Information** ||||||||||||||||NA2 = Product Type Marking Code|NA2 = Product Type Marking Code|NA2 = Product Type Marking Code|NA2 = Product Type Marking Code|NA2 = Product Type Marking Code|NA2 = Product Type Marking Code|NA2 = Product Type Marking Code||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||**NA2**
**YM**||||||||YM = Date Code Marking
Y = Year (ex: X = 2010)||||||||||||| ||||||||||||||||M = Month (ex: 9 = September)||M = Month (ex: 9 = September)||||||||||| ||||||||||||||||||||||||||||| |Date CodeKey|||||||||||||||||||||||||||| |**Year**|**2010**||||**2011**||||||**2012**||||**2013**||||**2014**||||**2015**|||**2016**|| |**Code**|X||||Y|||||||Z|||A||||B||||C||||D| ||||||||||||||||||||||||||||| |**Month**|**Jan**||**Feb**||**Mar**||||**Apr**||||**May**||**Jun**||**Jul**||**Aug**||**Sep**||**Oct**||**Nov**||**Dec**| |**Code**|1||2||3|||||4|||5||6||7||8||9||O||N||D| 1 of 5 **www.diodes.com** DMN313DLT Document number: DS35078 Rev. 2 - 2 August 2011 © Diodes Incorporated **DMN313DLT** **Maximum Ratings** @TA = 25°C unless otherwise specified |**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---|---|---| ||||||| |**Characteristic **
~~———~~|||**Symbol **
~~———~~|**Value **
~~———~~|**Unit **
~~———~~| |Drain-Source Voltage
~~———~~
~~ee~~|||VDSS
~~———~~|30
~~———~~|V
~~———~~| |Gate-Source Voltage
~~———~~
~~ee~~|||VGSS
~~———~~|±20
~~———~~|V
~~———~~| |Continuous Drain Current (Note 4) VGS= 4.0V
~~ee~~|Steady
State|TA = 25°C
TA = 70°C|ID|0.27
0.21|A| |Continuous Drain Current (Note 5) VGS= 4.0V
~~ee~~
~~a~~|Steady
State|TA = 25°C
TA = 70°C|ID|0.31
0.25|A| |Continuous Drain Current (Note 5) VGS= 4.0V
~~SG~~|t≤10s
~~SG~~|TA = 25°C
TA = 70°C
~~SG~~|ID
~~SG~~|0.38
0.3
~~SG~~|A
~~SG~~| |Continuous Drain Current (Note 4) VGS= 2.5V
~~a~~|Steady
State
~~a~~|TA = 25°C
TA = 70°C
~~a~~|ID
~~a~~|0.21
0.15
~~a~~|A
~~a~~| |Continuous Drain Current (Note 5) VGS= 2.5V
~~A~~|t≤10s
~~A~~|TA = 25°C
TA = 70°C
~~A~~|ID
~~A~~
~~Q~~|0.29
0.22
~~A~~|A
~~A~~| |Pulsed Drain Current(Note 6)
~~a~~|||IDM
~~a~~
~~Q~~|1.2
~~a~~|A
~~a~~| ## **Thermal Characteristics** ||||| |---|---|---|---| |**Characteristic**|**Symbol **|**Max **|**Unit**| |Power Dissipation(Note 4)|PD|0.28|W| |Thermal Resistance,Junction to Ambient@TA= 25°C(Note 4)|RθJA|474|°C/W| |Power Dissipation(Note 5)|PD|0.36|W| |Thermal Resistance,Junction to Ambient@TA= 25°C(Note 5)|RθJA|361|°C/W| |Power Dissipation(Note 5)t≤10s|PD|0.52|W| |Thermal Resistance,Junction to Ambient@TA= 25°C(Note 5)t≤10s|RθJA|252|°C/W| |Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C| **Electrical Characteristics** @ TA = 25°C unless otherwise stated |**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated|**Electrical Characteristics**@ TA = 25°C unless otherwise statedA = 25°C unless otherwise stated= 25°C unless otherwise stated| |---|---|---|---|---|---|---| |||||||| |**Characteristic**
~~ee~~|**Symbol**
~~ee~~|**Min**
~~ee~~|**Typ**
~~ee~~|**Max**
~~ee~~|**Unit**
~~ee~~|**Test Condition**
~~ee~~| |**OFF CHARACTERISTICS(Note 7)**
~~ee~~||||||| |Drain-Source Breakdown Voltage
~~ee~~|BVDSS
~~ee~~|30
~~ee~~|-
~~ee~~|-
~~ee~~|V
~~ee~~|VGS= 0V,ID= 250μA
~~ee~~| |Zero Gate Voltage Drain Current TJ= 25°C|IDSS|-|-|0.1|μA|VDS= 30V,VGS= 0V| |Gate-Source Leakage
~~a~~|IGSS
~~a~~|-
~~aee~~|-
~~ee~~|±1.0
~~ee~~|μA
~~ee~~|VGS= ±20V,VDS= 0V
~~XS~~| |**ON CHARACTERISTICS (Note 7)**
~~aee~~
~~XS~~||||||| |Gate Threshold Voltage
~~a~~
~~ES~~|VGS(th)
~~a~~
~~ES~~|0.5
~~aee~~
~~ES~~|-
~~ee~~
~~ES~~|1.5
~~ee~~
~~ES~~|V
~~ee~~
~~ES~~|VDS= VGS,ID= 250μA
~~XS~~
~~ES~~| |Static Drain-Source On-Resistance
~~a~~
~~ES~~|RDS (ON)
~~a~~
~~ES~~|-
~~a ee~~
~~ES~~|1.3
~~ee~~
~~ES~~|2
~~ee~~
~~ES~~|Ω
~~ee~~
~~ES~~|VGS= 4V,ID= 10mA
~~XS~~
~~ES~~| |||-
~~ES~~|1.6
~~ES~~|3.2
~~ES~~||VGS= 2.5V,ID= 1mA
~~ES~~| |Forward Transfer Admittance
~~ES~~||Yfs|
~~ES~~|-
~~ES~~|93
~~ES~~|-
~~ES~~|mS
~~ES~~|VDS= 3V,ID= 10mA
~~ES~~| |Diode Forward Voltage
~~a~~|VSD
~~GO~~|-
~~GO~~|0.7
~~GO~~|1.3
~~GO~~|V
~~GO~~|VGS= 0V,IS= 115mA
~~GO~~| |**DYNAMIC CHARACTERISTICS (Note 8)**
~~oe~~||||||| |Input Capacitance
~~oe~~|Ciss
~~oe~~|-
~~oe~~|36.3
~~oe~~|-
~~oe~~|pF
~~oe~~|VDS= 5V, VGS= 0V,
f = 1.0MHz
~~oe~~| |Output Capacitance
~~ee~~|Coss|-|7.6|-||| |Reverse Transfer Capacitance|Crss|-|4.7|-||| |Gate Resistance|Rg|-|128|-|Ω|VDS= 0V,VGS= 0V,f = 1MHz| |Total Gate Charge
~~——~~|Qg
~~——~~|-
~~——~~|0.5
~~——~~|-
~~——~~|nC
~~——~~|VGS= 4.5V, VDS= 15V,
ID= 10mA
~~——~~| |Gate-Source Charge
~~——~~|Qgs
~~——~~|-
~~——~~|0.1
~~——~~|-
~~——~~||| |Gate-Drain Charge
~~——~~|Qgd
~~——~~|-
~~——~~|0.1
~~——~~|-
~~——~~||| |Turn-On DelayTime
~~——~~
~~SESS~~|tD(on)
~~——~~
~~SESS~~|-
~~——~~
~~SESS~~|4.5
~~——~~
~~SESS~~|-
~~——~~
~~SESS~~|ns
~~——~~
~~SESS~~|VGS= 4.5V, VDS= 15V,
RG= 2Ω,
ID= 180mA
~~——~~
~~SESS~~| |Turn-On Rise Time
~~SESS~~|tr
~~SESS~~|-
~~SESS~~|2.24
~~SESS~~|-
~~SESS~~|ns
~~SESS~~|| |Turn-Off DelayTime
~~SESS~~|tD(off)
~~SESS~~|-
~~SESS~~|19.2
~~SESS~~|-
~~SESS~~|ns
~~SESS~~|| |Turn-Off Fall Time
~~SESS~~|tf
~~SESS~~|-
~~SESS~~|28.2
~~SESS~~|-
~~SESS~~|ns
~~SESS~~|| 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 5 **www.diodes.com** DMN313DLT Document number: DS35078 Rev. 2 - 2 August 2011 © Diodes Incorporated **==> picture [562 x 734] intentionally omitted <==** **----- Start of picture text -----**
DMN313DLT
1.0 1
VGS = 10V VGS = 2.5V VDS = 10V
0.8 V GS = 5.0V V GS = 4.0V T A = 85°C
VGS = 3.0V 0.1 TA = 125°C T A = 25°C
0.6
VGS = 2.0V
TA = 150°C TA = -55°C
0.4
0.01
0.2
VGS = 1.5V
0.0 0.001
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics
3 10
V GS = 5.0V
2.5 TA = 150°C
TA = 125°C
2
VGS = 2.5V
VGS = 4.5V
1.5
1
1 VGS = 10V [aoe] T A = 85°C T A = 25°C TA = -55°C
0.5
0 0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 1
ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature
1.6
3
2.5 VGS = 10V 1.4
ID = 300mA
2
1.2
1.5 VGS = 10V
ID = 150mA
1
ID = 1mA
1
ae
0.8
0.5
0.6
0 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature
Fig. 5 On-Resistance Variation with Temperature
[L]
DMN313DLT 3 of 5 August 2011
Document number: DS35078 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
-ID ID
)
NEW PRODUCT ) Ω
, DRAIN-SOURCE ON-RESISTANCE (Ω , DRAIN-SOURCE ON-RESISTANCE (
DS(ON) DS(ON)
R R
)Ω
, GATE THRESHOLD VOLTAGE (V)
GS(TH)
V
, STATIC DRAIN-SOURCE, ON-RESISTANCE (
DSON
R
**----- End of picture text -----**
**DMN313DLT** **==> picture [471 x 479] intentionally omitted <==** **----- Start of picture text -----**
60 10
f=1MHz
55
50
8
45
40
35 ee CISS 6 a VIDDS = 800mA = 15V
30
25 tt 4 tA
20
ee el |
15
2
10 Ke—__] COSS =
5
0 CRSS 0
0 0.2 0.4 0.6 0.8 1 1.2
0 5 10 15 20
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 08 Gate Charge CharacteristicsQG - (nC)
Fig. 7 Typical Junction Capacitance
1
SSS SRE et SnISSE
SS eeeaa
[| [tittyNNSSSmr TT
_ r(t) @ D=0.5 PONE
cy NTTertcn Pt
r(t) @ D=0.9
r(t) @ D=0.3 r(t) @ D=0.7
0.1 =erail Ceere A|LIUIE FINALUILEEL A TIN|
en r(t) @ D=0.1 Ee eC
CF r(t) @ D=0.05 7a||
7A
r(t) @ D=0.02 SO Tat!
0.01
r(t) @ D lLPIA = o 0.01 we ATA ULITIPTHAINLLIN CLINLULLELIMI ELIMILUTTELIM
SoS
I~ |
r(t) @ D=0.005 RθJA(t)=r(t) * RθJA
KOcEPRT TEE ETI IE RθJA=54°C/W ilil
Duty Cycle, D=t1/ t2
r(t) @ D=Single Pulse
0.001 Lt ELA | LU LEE
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Fig. 9 Transient Thermal Resistance
(V)
GS
V
, JUNCTION CAPACITANCE (pF)
T
C
r(t), TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
## **Package Outline Dimensions** **==> picture [331 x 159] intentionally omitted <==** **----- Start of picture text -----**
A
SOT-523
a i e PC
Dim Min Max Typ
" es a
A 0.15 0.30 0.22
— —— - F es a
B C B 0.75 0.85 0.80
C 1.45 1.75 1.60
hy es a a
D ⎯ ⎯ 0.50
a es ee
G G 0.90 1.10 1.00
H = H 1.50 1.70 1.60
J 0.00 0.10 0.05
a E=
K N M K L 00..1600 00..8030 00.7.22 5
sUP(rotTEe Ga! S R reee M s a 0 eeee .10 0 eeee .20 0.12
zoey J D o L S es N a 0.45 0.65 0.50
es a
EF α 0° 8° ⎯
All Dimensions in mm
_—_
**----- End of picture text -----**
4 of 5 **www.diodes.com** DMN313DLT Document number: DS35078 Rev. 2 - 2 August 2011 © Diodes Incorporated **DMN313DLT** ## **Suggested Pad Layout** **==> picture [330 x 110] intentionally omitted <==** **----- Start of picture text -----**
Y
Dimensions Value (in mm)
Z 1.8
Z a lth C X 0.4
Y 0.51
C 1.3
E 0.7
X E
"anea
**----- End of picture text -----**
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