# Power MOSFET, N Channel, 30 V, 4.2 A, 0.024 ohm, SC-59, Surface Mount

![Product image](https://novapart.co/image/farnell:3943599RL/)

**URL**: https://novapart.co/products/DMN3070SSN-7/power-mosfet-n-channel-30-v-42-a-0024-ohm-sc-59
**SKU**: DMN3070SSN-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0970
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 780mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SC-59 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.2A |
| Drain Source On State Resistance | 0.024ohm |
| Gate Source Threshold Voltage Max | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943599RL/)

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DMN3070SSN<br>30V N-CHANNEL ENHANCEMENT MODE MOSFET<br>Product Summary Features<br>ID   Low On-Resistance<br>V(BR)DSS RDS(ON) MAX Package  TA = +25°C   ESD Protected Gate<br>40mΩ @ VGS = 10V  5.1A<br>30V  50mΩ @ VGS = 4.5V  SC59  4.3A   Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)<br> Halogen and Antimony Free. “Green” Device (Note 3)<br> Qualified to AEC-Q101 Standards for High Reliability<br>Description<br>This new generation MOSFET has been designed to minimize the on-<br>Mechanical Data<br>state resistance (RDS(ON)) and yet maintain superior switching<br>performance, making it ideal for high efficiency power management   Case: SC59<br>applications.   Case Material – Molded Plastic. UL Flammability Rating 94V-0<br> Moisture Sensitivity:  Level 1 per J-STD-020<br>Applications   Terminals: Finish - Matte Tin Solderable per MIL-STD-202,<br>Method 208  e3<br> Load Switch<br> Terminal Connections: See Diagram<br> DC-DC Converters<br> Weight: 0.014 grams (approximate)<br>|  DIODES. Power Management Functions   & . 7<br><br>Drain<br>2kV SC59 D Body<br>Diode<br>Gate<br>G S    Gate<br>   Protection Source<br>a & SI    Diode<br>ESD PROTECTED<br>TOP VIEW<br>TOP VIEW Pin Configuration Equivalent Circuit<br>Ordering Information  (Note 4)<br>Part Number Case Packaging<br>DMN3070SSN-7  SC59  3000/Tape & Reel<br>NEW PRODUCT<br>**----- End of picture text -----**<br>


- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html 

## **Marking Information** 

N70 = Product Type Marking Code YM = Date Code Marking **N70** Y = Year ex: Z = 2012 M = Month ex: 9 = September 

Date Code Key **Year 2010 2011 2012 2013 2014 2015 2016 2017** ~~————————~~ **Code** X Y Z A B C D E **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~——— ee~~ 

1 of 6 **www.diodes.com** 

DMN3070SSN Document number: DS36169  Rev. 2 - 2 

March 2013 © Diodes Incorporated 

**DMN3070SSN** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4.2<br>3.3|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|5.1<br>4|A|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|3.7<br>2.8|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|4.3<br>3.3|A|
|Pulsed Drain Current(10µspulse,dutycycle = 1%)|||IDM|60|A|
|Maximum BodyDiode Forward Current(Note 6)|||IS|2|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.78|W|
||TA= +70°C||0.5||
|Thermal Resistance, Junction to Ambient (Note 5)|Steadystate|RθJA|160|°C/W|
||t<10s||115|°C/W|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.3|W|
||TA= +70°C||0.8||
|Thermal Resistance, Junction to Ambient (Note 6)|Steadystate|RθJA|96|°C/W|
||t<10s||68|°C/W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|18|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~——~~|**Symbol**<br>~~——~~|**Min**<br>~~——~~|**Typ**<br>~~——~~|**Max**<br>~~——~~|**Unit**<br>~~——~~|**Test Condition**<br>~~——~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~——~~|||||||
|Drain-Source Breakdown Voltage<br>~~——~~|BVDSS<br>~~——~~|30<br>~~——~~|—<br>~~——~~|—<br>~~——~~|V<br>~~——~~|VGS= 0V,ID= 250µA<br>~~——~~|
|Zero Gate Voltage Drain Current<br>~~——~~|IDSS<br>~~——~~|—<br>~~——~~|—<br>~~——~~|1<br>~~——~~|µA<br>~~——~~|VDS=24V,VGS= 0V<br>~~——~~|
|Gate-BodyLeakage|IGSS|—|—|±10|µA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~rs~~|VGS(th)<br>~~rs~~|1.1<br>~~rs~~|—<br>~~rs~~|2.1<br>~~rs~~|V<br>~~rs~~|VDS= VGS,ID= 250µA<br>~~rs~~|
|Static Drain-Source On-Resistance<br>~~rs~~<br>~~——~~|RDS(ON)<br>~~rs~~<br>|—<br>~~rs~~<br>|24<br>~~rs~~<br>|40<br>~~rs~~<br>|mΩ<br>~~rs~~<br>|VGS= 10V,ID= 4.2A<br>~~rs~~<br>|
|||—<br>~~rs~~<br>|30<br>~~rs~~<br>|50<br>~~rs~~<br>||VGS= 4.5V,ID= 2A<br>~~rs~~<br>|
|Forward Transfer Admittance<br>~~——~~|IYfsI<br>|—<br>|2.7<br>|—<br>|S<br>|VDS= 5V,ID=4.2A<br>|
|Diode Forward Voltage<br>~~——~~|VSD<br>|—<br>|0.75<br>|1.0<br>|V<br>|VGS= 0V,IS= 1A<br>|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~——ee~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|697<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= 15V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|97<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|67<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Gate Resistance|Rg|—|1.47|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= 4.5V)|Qg|—|6|—|nC<br>~~ee~~|VDS= 15V, ID= 9A<br>~~ee~~|
|Total Gate Charge(VGS= 10V)|Qg|—|13.2|—|||
|Gate-Source Charge|Qgs|—|2.2|—|||
|Gate-Drain Charge<br>~~ee~~|Qgd<br>~~ee~~|—<br>~~ee~~|1.8<br>~~ee~~|—<br>~~ee~~|||
|Turn-On DelayTime<br>~~ee~~|tD(ON)<br>~~ee~~|—<br>~~ee~~|4.3<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~|VDD=15V,VGEN=10V,RGEN= 6Ω,<br>RL=15Ω<br>~~ee~~<br>~~ep~~|
|Turn-Off DelayTime<br>~~ee~~|tD(OFF)<br>~~ee~~|—<br>~~ee~~|4.4<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-On Rise Time<br>~~ee~~|tr<br>~~ee~~|—<br>~~ee~~|20.1<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~ee~~<br>~~ep~~|tf<br>~~ee~~<br>~~ep~~|—<br>~~ee~~<br>~~ep~~|4.1<br>~~ee~~<br>~~ep~~|—<br>~~ee~~<br>~~ep~~|ns<br>~~ee~~<br>~~ep~~||
|Reverse RecoveryTime<br>~~ep~~|trr<br>~~ep~~|—<br>~~ep~~|7.3<br>~~ep~~|—<br>~~ep~~|Ns<br>~~ep~~|IF= 9A,di/dt = 500A/μs<br>~~ep~~|
|Reverse RecoveryCharge<br>~~ep~~|Qrr<br>~~ep~~|—<br>~~ep~~|7.9<br>~~ep~~|—<br>~~ep~~|nC<br>~~ep~~|IF= 9A,di/dt = 500A/μs<br>~~ep~~|



8. Guaranteed by design. Not subject to production testing. 

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DMN3070SSN Document number: DS36169  Rev. 2 - 2 

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**DMN3070SSN** 

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30 20<br>V DS = 5.0V<br>a anno<br>25<br>16<br>20<br>” Yo 480 12 |!<br>15<br>TA = 150°C<br>8<br>10 TA = 125°C<br>TA = 85°C<br>| 4<br>5 See TA oe  = 25°C<br>TA = -55°C<br>0 0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE<br>Figure 1  Typical Output Characteristic Figure 2  Typical Transfer Characteristics<br>0.1 0.08<br>VGS= 4.5V<br>“COPE V GS = 2.5V 0.06 | | | |fl<br>0.04 T A  = 125°C TA = 150°C<br>BERR pf<br>[TTT ttre VGS = 4.5V SSft TA = 85°C<br>0.02 TA = 25°C<br>VGS = 10V TA = -55°C<br>0.01 0<br>0 Tot 4 8 12 16 20 }=9 —F 0  EEE 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT ID, DRAIN CURRENT<br>Figure 3  Typical On-Resistance vs.  Figure 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 0.08<br>VGS  10= V<br>ID = 10A<br>1.4<br>0.06<br>BRRRRESY<br>VGS = 4.5V<br>1.2 I D = 5A<br>0.04 V GS = 4.5V<br>ID = 5A<br>ann<br>1.0<br>SnnPae<br>0.02<br>0.8 VGS  10= V<br>er LLL ID = 10A<br>0.6 PLE 0<br>50 -25 0 25 ET 50 75 EEE 100 125 150 - 50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5  On-Resistance Variation with Temperature Figure 6  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I  I<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMN3070SSN** 

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2.4 20<br>2.0<br>o ID = 1mA p 15<br>1.6 I D = 250µA<br>1.2 10 T A = 25°C<br>epee = CLOTTED<br>0.8<br>ceo 5 |<br>0.4<br>0 CHEE 0 Hott<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>TJ, JUNCTION TEMPERATURE (C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7  Gate Threshold Variation vs. Ambient Temperature Figure 8  Diode Forward Voltage vs. Current<br>10,000 1,000<br>C iss<br>ee ———<br>1,000 TA = 150°C<br>———— a a<br>aa T A  = 125°C Sa Coss<br>100 100<br>ee O §<br>TA = 85°C Crss<br>10 el<br>T A  = 25°C<br>ee ee ee ee ee ee<br>f = 1MHz<br>1 10<br>0 a 5 10 15 20 25 30 | 0 | 5 ft 10 | 15 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9  Typical Drain-Source Leakage Current vs. Voltage Figure 10  Typical Junction Capacitance<br>10<br>8 VDS = 15V, ID  9= A<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14 16<br>Qg [, TOTAL GATE CHARGE ]  (nC)<br>Figure 11  Gate Charge<br>, SOURCE CURRENT (V)<br>, GATE THRESHOLD VOLTAGE (V) IS<br>GS(th)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN LEAKAGE CURRENT (nA)<br>IDSS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMN3070SSN Document number: DS36169  Rev. 2 - 2 

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**DMN3070SSN** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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A<br>SC59<br>Dim  Min  Max  Typ<br>A  0.35  0.50  0.38<br>B C B  1.50  1.70  1.60<br>C  2.70  3.00  2.80<br>D  -  -  0.95<br>G G  -  -  1.90<br>H H  2.90  3.10  3.00<br>J  0.013 0.10  0.05<br>K N M K L  1.00 0.35  1.30 0.55  1.10 0.40<br>M  0.10  0.20  0.15<br>J D L N  0.70  0.80  0.75<br>OD, ;ObEn  [| 0°  |[| 8°  -<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Y<br>Z<br>a C<br>X E<br>| &]Rak Ey<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Z**|3.4|
|**X**|0.8|
|**Y**|1.0|
|**C**|2.4|
|**E**|1.35|



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DMN3070SSN Document number: DS36169  Rev. 2 - 2 

March 2013 © Diodes Incorporated 

**DMN3070SSN IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** i. [| Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

**www.diodes.com** 

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DMN3070SSN Document number: DS36169  Rev. 2 - 2 

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