# Power MOSFET, N Channel, 30 V, 4 A, 0.052 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3943597/)

**URL**: https://novapart.co/products/DMN3065LW-13/power-mosfet-n-channel-30-v-4-a-0052-ohm-sot-323
**SKU**: DMN3065LW-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0780
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 770mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.052ohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943597/)

**DMN3065LW** 7 

## **N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

## **Product Summary** 

|**BVDSS**<br>**RDS(ON)**<br>**Package**<br>**ID max**<br>**TA = +25°C**<br>30V<br>52mΩ@VGS= 10V<br>SOT323<br>4A<br>65mΩ@VGS= 4.5V<br>85mΩ@VGS= 2.5V|**BVDSS**<br>**RDS(ON)**<br>**Package**<br>**ID max**<br>**TA = +25°C**<br>30V<br>52mΩ@VGS= 10V<br>SOT323<br>4A<br>65mΩ@VGS= 4.5V<br>85mΩ@VGS= 2.5V|**BVDSS**<br>**RDS(ON)**<br>**Package**<br>**ID max**<br>**TA = +25°C**<br>30V<br>52mΩ@VGS= 10V<br>SOT323<br>4A<br>65mΩ@VGS= 4.5V<br>85mΩ@VGS= 2.5V|**BVDSS**<br>**RDS(ON)**<br>**Package**<br>**ID max**<br>**TA = +25°C**<br>30V<br>52mΩ@VGS= 10V<br>SOT323<br>4A<br>65mΩ@VGS= 4.5V<br>85mΩ@VGS= 2.5V|
|---|---|---|---|
|**BVDSS**|**RDS(ON)**|**Package**|**ID max**<br>**TA = +25°C**|
|30V|52mΩ@VGS= 10V|SOT323|4A|
||65mΩ@VGS= 4.5V|||
||85mΩ@VGS= 2.5V|||



## **Features** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Battery Operated Systems and Solid-State Relays 

## **Mechanical Data** 

- Case: SOT323 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Terminal Connections: See Diagram 

- 

- Weight: 0.006 grams (Approximate) 

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**----- Start of picture text -----**<br>
SOT323<br>D<br>D<br>G<br>G S<br>~ J &<br>S<br>      Top View  Pin Configuration<br>Equivalent Circuit<br>Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN3065LW-7|SOT323|3000/Tape &Reel|
|DMN3065LW-13|SOT323|10000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

||||||||||||||N35 = Product Type Marking Code||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||**N35**|**YM**|||YM = Date Code Marking<br>Y = Year (ex: G = 2019)||||||
||||||||||||||M = Month (ex: 9 = September)||||||
||Date CodeKey||||||||||||||||||
|**Year**<br>**2018**<br>**2019**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**Code**<br>F<br>G<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>~~————————————~~<br>~~—~~|||||||||||||||||||
||DMN3065LW||||||||||||1 of 6|||||March 2019|
||Document number: DS36078  Rev. 6 - 2||||||||||||**www.diodes.com**||||© Diodes Incorporated||



March 2019 © Diodes Incorporated 

**DMN3065LW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Drain Source Voltage|VDSS|30|V|
|Gate-Source Voltage|VGSS|±12|V|
|Drain Current(Note 5)|ID|4|A|
|Body-Diode Continuous Current(Note 5)|IS|1|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|PD|770|mW|
|Thermal Resistance, Junction to Ambient      @TA= +25°C(Note 5)|RθJA|162|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|30<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~<br>~~UI~~|<br>~~ee~~<br>~~I~~|<br>~~ee~~<br>~~ITD~~|1<br>~~ee~~<br>~~ID~~|µA<br>~~ee~~<br>~~(ON~~|VDS= 30V, VGS= 0V<br>~~ee~~|
|Gate-BodyLeakage<br>~~I~~|IGSS<br>~~I~~<br>~~UI~~|<br>~~I~~<br>~~I~~|<br>~~I~~<br>~~ITD~~|±100<br>~~I~~<br>~~ID~~|nA<br>~~I~~<br>~~(ON~~|VGS= ±12V, VDS= 0V<br>~~I~~|
|**ON CHARACTERISTICS(Note 6)**<br>~~I~~<br>~~UI~~<br>~~I~~<br>~~ITD ID(ON~~<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|0.5<br>~~ee~~<br>~~EE~~|<br>~~ee~~<br>~~EE~~|1.5<br>~~ee~~<br>~~EE~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~a~~|<br><br>~~a~~<br>~~EE~~|<br><br><br>~~a~~<br>~~EE~~|52<br>65<br>85<br>~~a~~<br>~~EE~~|mΩ<br>~~a~~|VGS= 10V, ID= 4A<br>VGS= 4.5V, ID= 3A<br>VGS= 2.5V, ID= 2A<br>~~a~~|
|Source-Drain Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|<br>~~a~~<br>~~EE~~|<br>~~a~~<br>~~EE~~|1.2<br>~~a~~<br>~~EE~~|V<br>~~a~~|VGS= 0V, IS= 2.0A<br>~~a~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~EE~~|||||||
|Input Capacitance<br>~~PC~~<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|465<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= 15V, VGS= 0V, f = 1.0MHz<br>~~ee~~<br>~~(OU~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|49.5<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~<br>~~GD~~|<br>~~ee~~<br>~~I~~|43.8<br>~~ee~~<br>~~UD~~|<br>~~ee~~<br>~~(ON~~|pF<br>~~ee~~<br>~~OO~~||
|Gate Resistance<br>~~I~~|Rg<br>~~I~~<br>~~GD~~|<br>~~I~~<br>~~I~~|2.3<br>~~I~~<br>~~UD~~|<br>~~I~~<br>~~(ON~~|Ω<br>~~I~~<br>~~OO~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~I~~<br>~~(OU~~|
|Total Gate Charge(VGS= 10V)<br>~~————~~|Qg<br>~~GD ~~<br>~~a~~|<br> ~~I ~~<br>~~ee~~|11.7<br> ~~UD~~<br>~~ee~~|<br>~~(ON~~|nC<br>~~OO ~~|VDS= 15V, ID= 4A<br> ~~(OU~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~<br>~~————~~|Qg<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~ee~~|5.5<br>~~———~~<br>~~ee~~|<br>~~———~~|nC<br>~~———~~|VDS= 15V, ID= 4A<br>~~———~~<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~———~~<br>~~————~~|Qgs<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~ee~~|1.1<br>~~———~~<br>~~ee~~|<br>~~———~~|nC<br>~~———~~||
|Gate-Drain Charge<br>~~———~~<br>~~————~~|Qgd<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~ee~~|1.8<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~ee~~|nC<br>~~———~~<br>~~ee~~||
|Turn-On Delay Time<br>~~———~~<br>~~————~~|tD(ON)<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~ee~~|1.9<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~ee~~|ns<br>~~———~~<br>~~ee~~|VDD= 15V, VGEN= 10V,<br>RGEN= 3Ω, RL= 3.75Ω<br>~~———~~<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR<br>~~a~~|<br>~~ee~~|1.6<br>~~ee~~|<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)<br>~~a~~|<br>~~ee~~|10.3<br>~~ee~~|<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~————~~|tF<br>~~a~~|<br>~~ee~~|2.0<br>~~ee~~|<br>~~ee~~|ns<br>~~ee~~||



DMN3065LW Document number: DS36078  Rev. 6 - 2 

March 2019 © Diodes Incorporated 

**DMN3065LW** 

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10.0 20<br>VGS = 10V V     = 5.0VDS<br>18<br>8.0 VGS = 4.5V 16<br>[A)] 14<br>VGS = 3.5V T [(]<br>6.0 [fo [N] E 12 a i<br>R<br>pir VGS = 3.0V RUC 10 Eee<br>4.0 VGS = 2.0V [IN] A 8 T   = 150°CA<br>VGS = 2.5V RD<br>, D 6 T   = 125°CA<br>I T   = 25°CA<br>2.0 a 4 a<br>T   = 85°CA<br>| fo<br>2 T   = -55°CA<br>VGS = 1.5V<br>0.0 Ane 0 ee<br>0 1 2 3 4 5 0 1 2 3 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    GS , GATE-SOURCE VOLTAGE (V)<br>Figure 1  Typical Output Characteristics Figure 2  Typical Transfer Characteristics<br>1 ) 0.08<br>[(] E V     = 4.5VGS<br>C 0.07<br>[N] A<br>SSS HHH T   = 150°CA<br>0.06<br>[SIST] E<br>- [R][N] O 0.05 T   = 125°CA T   = 85°CA<br>FEEFRSER) = Ee<br>E<br>0.1 CR 0.04<br>V GS = 2.5V T   = 25°CA<br>- [SOU] 0.03<br>T   = -55°CA<br>V GS = 4.5V [IN] RA<br>Pee tt D 0.02 P| | | | |<br>SSS V GS = 10V , UT<br>( [ON)] 0.01<br>D [S]<br>R<br>0.01 PPP) 0 Eee<br>1 3 5 7 9 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A) I  D , DRAIN CURRENT (A)<br>Figure 3  Typical On-Resistance vs.  Figure 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>2 0.1<br>1.8 V GS   10= V<br>ID = 6A<br>0.08<br>1.6<br>1.4 coopcasaSaGeeD Au V I DGS = 3A = 4.5V =  LLL 0.06 Tp pt VIDGS= 2A  2= .5V VGS = 4.5V<br>1.2 ID = 3A<br>VGS  2= .5V<br>1 neues I D = 2A a 0.04 a aaa VGS  10= V<br>ID = 6A<br>Le rey | ee<br>0.8<br>0.02<br>petty [beer<br>0.6<br>0.4 cee 0<br>-50 -25 0 25 50 75 100 125 rté 150 «iCLC -50 LLCL -25 0 25 LEE 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5  On-Resistance Variation with Temperature Figure 6  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br> I<br>D<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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20 P|<br>18<br>16<br>14<br>eeee<br>12<br>P| Tt<br>10<br>|| TA = 25°C TA = 25 癈 fo<br>8<br>—_ a<br>6<br>4<br>ee ee<br>2<br>0 4<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 8  Diode Forward Voltage vs. Current<br>10 /<br>VA<br>8<br>VDSDS = 15V<br>ID  4=D  4=  4== A<br>6 tf) KL.<br>/<br>4<br>/<br>2<br>0<br>0 2 4 6 8 10 12<br>Qgg [[, TOTAL GATE CHARGE ]] (nC)<br>Figure 10  Gate Charge<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1,000  10<br>a<br>_No}—_—J Ciss [|<br>a a<br>8<br>VDSDS = 15V<br>ID  4=D  4=  4== A<br>a 6 tf)<br>100<br>Poa,ee NAR a a 4 /<br>OO Coss<br>Crss<br>ee /<br>2<br>f = 1MHz<br>10<br>0<br>0 5 10 15 20 25 30 0 2 4 6 8<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qgg [[, TOTAL GATE CHARGE ]]<br>Figure 9  Typical Junction Capacitance Figure 10  Gate Charge<br>1<br>SS SSSSe<br>S D=0.7  e<br>D=0.5  Ra<br>a Aa a<br>D=0.3<br>D=0.9<br>0.1  TT EN a TIM LLL SAA7, CT 0T UT<br>D=0.1<br>e y Ae<br>D=0.05<br>P T ee ce<br>RnLa /7 A<br>D=0.02<br>0.01  pec ALIE UAELI ||EUIIE ETELTTT<br>EH D=0.01  per | TTT UTne<br>D=0.005<br>e e ae eae RθJA(t) = r(t) * RθJA Co<br>HA RθJA = 240 ℃ /W  HT<br>Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>0.001<br>1E-05  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 11. Transient Thermal Resistance<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMN3065LW Document number: DS36078  Rev. 6 - 2 

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**DMN3065LW** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT323** 

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D<br>A2<br>SOT323<br>Dim  Min  Max  Typ<br>c a A1  0.00 0.10 0.05<br>A1 a e L = A2 b 00..2905 1.0.4000 00..9530<br>c 0.10 0.18 0.11<br>b JO, ae D  1.80 2.20 2.15<br>E  2.00 2.20 2.10<br>E1  1.15 1.35 1.30<br>e  0.650 BSC<br>e1  1.20 1.40 1.30<br>F  0.375 0.475 0.425<br>L  0.25 0.40 0.30<br>E E1 a 0° 8° --<br>All Dimensions in mm<br>[=e| cd SEE<br>F e1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT323** 

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X<br>.<br>Y<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>G  1.300<br>Y1 G<br>X  0.470<br>Y  0.600<br>ec - Y1  2.500<br>C<br>e e l C —<br>**----- End of picture text -----**<br>


5 of 6 **www.diodes.com** 

DMN3065LW Document number: DS36078  Rev. 6 - 2 

March 2019 © Diodes Incorporated 

**DMN3065LW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

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Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN3065LW Document number: DS36078  Rev. 6 - 2 

March 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN3065LW-13/power-mosfet-n-channel-30-v-4-a-0052-ohm-sot-323)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn3065lw-13/mosfet-n-ch-30v-4a-sot-323/dp/3943597)
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