# Power MOSFET, N Channel, 30 V, 2.7 A, 0.041 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3589332/)

**URL**: https://novapart.co/products/DMN3061SW-7/power-mosfet-n-channel-30-v-27-a-0041-ohm-sot-323
**SKU**: DMN3061SW-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0570
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 490mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.7A |
| Drain Source On State Resistance | 0.041ohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3589332/)

**DMN3061SW N-CHANNEL ENHANCEMENT MODE MOSFET** 

## DIODES. 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|---|---|---|
|30V|60mΩ@VGS= 10V|2.7A|
||100mΩ@VGS= 4.5V|2.1A|



## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- General Purpose Interfacing Switch 

- Power Management Functions 

- DC-DC Converters 

- Analog Switch 

- Case: SOT323 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.027 grams (Approximate) 

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D<br>SOT323<br>G<br>@® 8<br>S<br>Top View  Equivalent Circuit<br>**----- End of picture text -----**<br>


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Top View 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN3061SW-7|SOT323|3,000/Tape & Reel|
|DMN3061SW-13|SOT323|10,000/Tape &Reel|



Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

BA4 = Product Type Marking Code YM or YM= Date Code Marking Y or Y= Year (ex: H = 2020) ~~|~~ M = Month (ex: 9 = September) 

Date Code Key 

|**Year**<br>**2019**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**Code**<br>G<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>~~tt~~|
|---|
|**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>~~[tt~~|



DMN3061SW 

1 of 7 **www.diodes.com** 

April 2020 © Diodes Incorporated 

Document number: DS41989 Rev. 2 - 2 

**DMN3061SW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.).))|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.).))|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.).))|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.).))|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.).))|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.).))|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|2.7<br>2.2|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|22|A|
|Maximum BodyDiode Forward Current(Note 5)|||IS|0.67|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.49|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RϴJA|254|°C/W|
|Total Power Dissipation(Note 6)||PD|0.65|W|
|Thermal Resistance, Junction to Ambient(Note 6)|Steady State|RϴJA|191|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **|||||||
|Drain-Source Breakdown Voltage<br>~~oe~~|BVDSS<br>~~oe~~|30<br>~~oe~~|—<br>~~oe~~|—<br>~~oe~~|V<br>~~oe~~|VGS= 0V,ID= 250µA<br>~~oe~~|
|Zero Gate Voltage Drain Current@TC= +25°C<br>~~oe~~|= +25°C<br>IDSS<br>~~oe~~|—<br>~~oe~~|—<br>~~oe~~|1.0<br>~~oe~~|µA<br>~~oe~~|VDS= 24V,VGS= 0V<br>~~oe~~|
|Gate-Source Leakage<br>~~oe~~|IGSS<br>~~oe~~|—<br>~~oe~~|—<br>~~oe~~|±100<br>~~oe~~|nA<br>~~oe~~|VGS= ±20V,VDS= 0V<br>~~oe~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|0.5<br>~~ee~~|—<br>~~ee~~|1.8<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~<br>~~=~~|RDS(ON)<br>~~ee~~<br>~~=~~|—<br>~~ee~~<br>~~=~~|41<br>~~ee~~<br>~~=~~|60<br>~~ee~~<br>~~=~~|mΩ<br>~~ee~~<br>~~=~~|VGS= 10V,ID= 3.1A<br>~~ee~~<br>~~=~~|
|||—<br>~~=~~|48<br>~~=~~|100<br>~~=~~||VGS= 4.5V,ID= 2A<br>~~=~~|
|||—<br>~~=~~|56<br>~~=~~|200<br>~~=~~||VGS= 3.3V,ID= 1.5A<br>~~=~~|
|Diode Forward Voltage<br>~~=~~|VSD<br>~~=~~|—<br>~~=~~|0.7<br>~~=~~|1<br>~~=~~|V<br>~~=~~|VGS= 0V,IS= 1A<br>~~=~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~er~~|Ciss<br>~~er~~|—<br>~~er~~|278<br>~~er~~|—<br>~~er~~|pF<br>~~er~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~er~~|
|Output Capacitance<br>~~er~~|Coss<br>~~er~~|—<br>~~er~~|44<br>~~er~~|—<br>~~er~~|pF<br>~~er~~||
|Reverse Transfer Capacitance<br>~~er~~|Crss<br>~~er~~|—<br>~~er~~|29<br>~~er~~|—<br>~~er~~|pF<br>~~er~~||
|Gate Resistance|Rg|—|4.2|—|Ω|VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge|Qg|—|3.5|—|nC|VDS= 15V, VGS= 4.5V, ID= 3A|
|Gate-Source Charge|Qgs|—|0.1|—|nC||
|Gate-Drain Charge|Qgd|—|1.3|—|nC||
|Turn-On DelayTime|tD(ON)|—|5.7|—|ns|VGS= 10V, VDS= 15V,<br>RG= 3Ω, RL= 1.7Ω|
|Turn-On Rise Time|tR|—|97|—|ns||
|Turn-Off DelayTime|tD(OFF)|—|12.6|—|ns||
|Turn-Off Fall Time|tF|—|51|—|ns||



- Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

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DMN3061SW Document number: DS41989 Rev. 2 - 2 

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**DMN3061SW** 

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25 20<br>VGS = 10V VDS = 5V<br>VGS = 4.5V<br>20 V GS  = 4V Cz VGS = 3.5V<br>LY 15 !<br>15<br>VGS = 3V<br>10<br>fe eee i<br>10<br>fo VGS = 2.5V 5 FT TTA A  = 85°C = 25°C<br>5 TA = 125°C TA = -55°C<br>VGS = 1.8V VGS = 2V TA = 150°C<br>VGS = 1.3V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4<br>V DS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.104 0.2<br>I D  = 3.1A<br>0.18 ID = 2A<br>0.084 V GS  = 3.3V 0.16 I D  = 1.5A<br>0.14<br>0.064 0.12<br>VGS  = 4.5V<br>0.1<br>0.044 VGS = 10V 0.08<br>0.06<br>0.024 0.04<br>0.02<br>0.004 0<br>0 PT 5 10 LLL.) 15 20 25 30 0  =6—EBRREEEES 2 4 6 8 10 12 14 16 18 20<br>IDFigure 3 Typical On-Resistance vs. , DRAIN-SOURCE CURRENT (A)  Figure 4 Typical Drain-Source On-Resistance V GS, GATE-SOURCE VOLTAGE (V)<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>0.1 1.8<br>VGS = 10V<br>VGS = 10V<br>1.6 I D = 3.1A<br>0.08<br>VGS  = 4.5V<br>TA = 150°C ID = 2A<br>oe HS<br>0.06 TA  = 125°C 1.4<br>TA = 85°C<br>== 7 VGS  = 3.3V<br>TA = 25°C 1.2 ID = 1.5A<br>0.04<br>TA  = -55°C<br>1<br>SS<br>0.02<br>0.8<br>0 —++-+— err<br>0 5 10 15 20 0.6 SRR<br>ID, DRAIN CURRENT (A) -50 -25 0 25 50 75 100 125 150<br>Figure 5 Typical On-Resistance vs.  TJ, JUNCTION TEMPERATURE (C)<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>D<br>, DRAIN CURRENT (A)<br> I<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br> I<br>D<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

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April 2020 © Diodes Incorporated 

**DMN3061SW** 

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2<br>1.5<br>IIDD = 250µA = 1mA<br>i<br>ID = 250μA ID = 1mAD = 250μA ID = 1mA = 250μA ID = 1mAID = 1mAD = 1mA = 1mA<br>1<br>ey<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( C)J, JUNCTION TEMPERATURE ( C), JUNCTION TEMPERATURE ( C)<br>Figure 8 Gate Threshold Variation vs. Junction TemperatureFigure 8 Gate Threshold Variation vs. Ambient Temperature<br>GS(th)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>


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0.1 2<br>VGS = 3.3V<br>0.08 ID = 1.5A<br>VGS = 4.5V 1.5<br>ID = 2A<br>0.06 |b ety i<br>ID = 250μA ID = 1mAD = 250μA ID = 1mA = 250μA ID = 1mAID = 1mAD = 1mA = 1mA<br>1<br>ee VGS = 10V<br>0.04 I D  = 3.1A<br>0.5<br>0.02<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE ( C)J, JUNCTION TEMPERATURE ( C), JUNCTION TEMPERATURE ( C)<br>Figure 7 On-Resistance Variation with Temperature<br>30 10000<br>f=1MHz<br>25 ft | | Lg<br>20 eee) 1000 e<br>y,<br>a<br>y] eee<br>15 C iss<br>TA = 125°C<br>TA = 150°C TA  = 85°C<br>10 e/a TA  = 25°C 100<br>TA = -55°C C oss<br>5<br>C rss<br>0 I—aA 10 ee<br>0 0.3 0.6 0.9 1.2 1.5 0 10 20<br>V SD, SOURCE-DRAIN VOLTAGE (V) VDSDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 100 R DS(on)<br>Limited<br>es ee ee eeOO<br>P W  = 1ms<br>8 RN<br>10<br>Poe TN TTT NRT<br>6 PAROS ROK OK<br>1 DC<br>4 VIDDS = 3A = 15V [| PWW = 10sPW = 1s 10sPW = 1sPW = 1sW = 1s = 1s OSD<br>P W  = 100ms<br>[| Y SSK<br>2 0.1 TJ(max) = 150°CJ(max) = 150°C = 150°C PW = 10msW = 10ms = 10ms<br>T C  = 25°C SESSA<br>V GS  = 10V<br>Single Pulse<br>0 0.01 DUT on 1*MRP Board ETETLIN<br>0 3 6 9 0.1 1 10<br>Qg, TOTAL GATE CHARGE (nC) V-VDSDS-VDSDSDSDSDS, DRAIN-SOURCE VOLTAGE (V) DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge<br>S<br>, SOURCE CURRENT (A)<br>I<br>, DRAIN CURRENT (A)<br>GATE-SOURCE VOLTAGE (V)  IDD<br>GS,<br>VGS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>GS(th)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>


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10000<br>f=1MHz<br>|<br>Se<br>ee<br>1000 e se<br>ee<br>a<br>eee eee<br>100 OO C iss<br>C oss<br>C rss<br>10 eeaee<br>0 10 20 30<br>VDSDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>100 R DS(on)<br>Limited<br>es ee ee eeOO<br>P W  = 1ms<br>RN<br>10 P W = 100µs<br>Poe TN TTT NRT IR<br>PAROS ROK OK<br>1 PRAARSEN DC<br>PWW<br>[| = 10sPW = 1s 10sPW = 1sPW = 1sW = 1s = 1s OSD NEeHBR<br>P W  = 100ms<br>[| Y SSK NNN<br>0.1 PW = 10msW = 10ms = 10ms<br>TJ(max) = 150°CJ(max) = 150°C = 150°C<br>T C  = 25°C SESSA ES<br>V GS  = 10V<br>Single Pulse DUT on 1*MRP Board SRS<br>0.01 ETETLIN LTT<br>0.1 1 10 100<br>V-VDSDS-VDSDSDSDSDS, DRAIN-SOURCE VOLTAGE (V) DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>IDD<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>**----- End of picture text -----**<br>


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DMN3061SW Document number: DS41989 Rev. 2 - 2 

April 2020 

© Diodes Incorporated 

**DMN3061SW** 

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1<br>SS D = 0.9 ee ite<br>ec D = 0.7 eee<br>D = 0.5<br>EMCEE [CTT] eeeeV<br>D = 0.3 emma<br>El TRIM TTI TIT I PTP TIE PITT EE TET<br>0.1 ESLM D = 0.1 meeeAUTEMeeETL<br>a a Oc 9” | 8<br>meetin D = 0.05 ese” emul am MEET Mf aT TT<br>bcc eA TTT<br>Eat<br>D = 0.02<br>AeA AE TIME TTT TTT<br>0.01 SeetN D = 0.01 NeAUTeTCUTIE<br>mlAede [TN]  oiTT D = 0.005 TT aPPa8PTTeVEE EEV2ESE EEE<br>D = Single Pulse<br>CPRnil nn EAEPUTT FT TTTreeTTI TIT TT PT PTE PT<br>R JA (t) = r(t) * RJA<br>R JA  = 252.5°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMN3061SW Document number: DS41989 Rev. 2 - 2 

April 2020 

© Diodes Incorporated 

**DMN3061SW** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT323** 

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**----- Start of picture text -----**<br>
D<br>A2<br>c a<br>A1 e L<br>J,<br>b<br>E E1<br>ea<br>a<br>F e1<br>**----- End of picture text -----**<br>


|**SOT323**|**SOT323**|**SOT323**|**SOT323**|
|---|---|---|---|
|**Dim**<br>**A1**|**Min**|**Max**|**Typ**|
|**A1**|0.00|0.10|0.05|
|**A2**<br>**b**|0.90<br>0.25|1.00<br>0.40|0.95<br>030|
|**b**|0.25|0.40|0.30|
|**c**|0.10|0.18|0.11|
|**D**|1.802.2|2.20|2.15|
|**E**|2.00|2.20|2.10|
|**E1**|1.15|1.35|1.30|
|**e**|0.650BSC|||
|**e1 **|1.20|1.40|1.30|
|**F**|0.375|0.475|0.425|
|**L**|0.25|0.40|0.30|
|**a**<br>~~—~~|0°<br>~~—~~|8°<br>~~—~~|--<br>~~—~~|
|**All Dimensions in mm**<br>~~—~~||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT323** 

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X<br>Y<br>Y1 G<br>( it<br>C<br>“ng<br>**----- End of picture text -----**<br>


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Value<br>Dimensions<br>(in mm)<br>C  0.650<br>G  1.300<br>X  0.470<br>Y  0.600<br>EB Y1  2.500<br>**----- End of picture text -----**<br>


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DMN3061SW Document number: DS41989 Rev. 2 - 2 

April 2020 © Diodes Incorporated 

**DMN3061SW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMN3061SW Document number: DS41989 Rev. 2 - 2 

April 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN3061SW-7/power-mosfet-n-channel-30-v-27-a-0041-ohm-sot-323)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn3061sw-7/mosfet-n-ch-30v-2-7a-sot-323/dp/3589332)
---

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