# Power MOSFET, N Channel, 30 V, 4.5 A, 0.033 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943594RL/)

**URL**: https://novapart.co/products/DMN3051L-7/power-mosfet-n-channel-30-v-45-a-0033-ohm-sot-23
**SKU**: DMN3051L-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1440
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.5A |
| Drain Source On State Resistance | 0.033ohm |
| Gate Source Threshold Voltage Max | 1.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943594RL/)

**DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**<br>30V|**RDS(ON) MAX**|**ID MAX**<br>**TA = +25°C**|
||38mΩ@VGS= 10V|5.8A|
||64mΩ@VGS= 4.5V|4.5A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Load Switch 

- DC-DC Converters 

- Power Management Functions 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

   - Weight: 0.008 grams (Approximate) 

- 

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SOT23<br>**----- End of picture text -----**<br>


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D<br>D<br>G G S<br>Top View  S Top View<br>Pin-Out<br>Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

**Part Number Case Packaging** DMN3051L-7 SOT23 3000/Tape & Reel 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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3N5 = Product Type Marking Code<br>3N53N5  YM = Date Code Marking<br>Y or Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2007 ~ 2019 2020 2021 2022 2023 2024 2025<br>Code U  ~  G  H  I  J  K  L  M<br>[/__|<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3  4  5  6  7  8  9  O  N  D<br>eS —<br>DMN3051L 1 of 6  June 2019<br>Document number: DS31347 Rev. 6 - 2 www.diodes.com   © Diodes Incorporated<br>YM<br>**----- End of picture text -----**<br>


June 2019 © Diodes Incorporated 

**DMN3051L** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady State|TA= +25°C|ID|4.5|A|
|||TA= +70°C||3.5||
||t<5s|TA= +25°C|ID|5.8|A|
|||TA= +70°C||4.9||
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|20|A|
|Maximum BodyDiode Forward Current (Note 6)|||IS|2|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.7|W|
||TA= +70°C||0.44||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RJA|182|°C/W|
||t < 5s||109||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.4|W|
||TA= +70°C||0.85||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RJA|94|°C/W|
||t < 5s||56||
|Thermal Resistance, Junction to Case (Note 6)||RJC|25||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~—_———~~|**Symbol**<br>~~—_———~~|**Min**<br>~~—_———~~|**Typ**<br>~~—_———~~|**Max**<br>~~—_———~~|**Unit**<br>~~—_———~~|**Test Condition**<br>~~—_———~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~—_———~~|||||||
|Drain-Source Breakdown Voltage<br>~~—_———~~<br>~~NNN~~|BVDSS<br>~~—_———~~|30<br>~~—_———~~|—<br>~~—_———~~|—<br>~~—_———~~|V<br>~~—_———~~|VGS= 0V, ID= 250µA<br>~~—_———~~<br>~~a~~|
|Zero Gate Voltage Drain Current<br>~~NNN~~<br>~~a~~|IDSS|—<br>~~ee~~|—<br>~~ee~~|800<br>~~ee~~|nA<br>~~ee~~|VDS= 28V, VGS= 0V<br>~~a~~<br>~~eee~~|
|Gate-Body Leakage<br>~~NNN~~<br>~~a~~|IGSS|—<br>~~ee~~|—<br>~~ee~~|80<br>~~ee~~|nA<br>~~ee~~|VGS= ±12V, VDS= 0V<br>~~a~~<br>~~eee~~|
|||||800<br>~~ee~~||VGS= ±20V, VDS= 0V<br>~~a~~<br>~~eee~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~a~~<br>~~ee eee~~|||||||
|Gate Threshold Voltage|VGS(TH)|1.3|1.9|2.2|V|VDS= VGS, ID= 250µA|
|Static Drain-Source On-Resistance<br>~~Ee~~|RDS(ON)<br>~~Ee~~|—<br>~~Ee~~|33<br>~~Ee~~|38<br>~~Ee~~|m<br>~~Ee~~|VGS= 10V, ID= 5.8A<br>~~Ee~~|
||||54<br>~~Ee~~|64<br>~~Ee~~||VGS= 4.5V, ID= 5.0A<br>~~Ee~~|
|Forward Transconductance<br>~~Ee~~<br>~~a~~||Yfs|<br>~~Ee~~<br>~~GG~~|—<br>~~Ee~~<br>~~GG~~|5<br>~~Ee~~<br>~~DO~~|—<br>~~Ee~~|s<br>~~Ee~~<br>~~GO~~|VDS= 5V, ID= 3.1A<br>~~Ee~~<br>~~(O~~|
|Source-Drain Diode Forward Voltage<br>~~a~~|VSD<br>~~GG~~|—<br>~~GG~~|0.78<br>~~DO~~|1.16|V<br>~~GO~~|VGS= 0V, IS= 2.0A<br>~~(O~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~a~~<br>~~GG DO~~<br>~~GO (O~~|||||||
|Input Capacitance<br>~~pT~~|Ciss|—|424|—|pF|VDS= 5V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance|Coss|—|115|—|pF||
|Reverse Transfer Capacitance|Crss|—|81|—|pF||
|Gate Resistance|Rg|—|1.51|—||VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge<br>~~pO~~|Qg|—|9.0|—|nC|VGS= 10V, VDS= 15V, ID= 5.8A<br>~~ee~~|
|Gate-Source Charge|Qgs|—|1.3|—|nC||
|Gate-Drain Charge<br>~~———~~|Qgd<br>~~———~~|—|1.3|—|nC<br>~~ee~~||
|Turn-On Delay Time<br>~~———~~|tD(ON) <br>~~———~~|—|3.4|—|ns<br>~~ee~~|VDD= 15V, VGS= 10V,<br>RL= 2.6Ω, Rg= 3Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~|tR<br>~~———~~|—|6.2|—|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~———~~|tD(OFF) <br>~~———~~|—|13.9|—|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~———~~|tF<br>~~———~~|—|2.8|—|ns<br>~~ee~~||



Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 

   6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. 

   7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

2 of 6 **www.diodes.com** 

DMN3051L Document number: DS31347 Rev. 6 - 2 

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**DMN3051L** 

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9.0 6<br>8.0 VGS = 10V<br>5<br>7.0 VGS = 4.5V<br>6.0 ff [A)] (T 4 f V     = 5VDS f<br>o/s [N] E e y<br>R<br>5.0 ff R /a<br>U<br>C 3<br>4.0 fo e/ a<br>[IN] A<br>R<br>3.0 of D 2 T   = 150°CA Va/;<br>, D<br>I T   = 125°CA<br>2.0<br>1.0 VGS = 2.5V VGS = 3.0V 1 T   = 85°CA T   = 25°CA<br>VGS = 1.8V T   = -55°CA<br>0 0<br>| Amano Le<br>0 0.5 1 1.5 2 2.5 3 1.5 2.5 3.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.090.1 se ee ) 0.10<br>0.09<br>0.08 T   = 150°CA<br>0.07 0.08 T   = 125°CA<br>pee eee<br>0.06 rr O [N-RESISTANCE(] 0.07 Pe e T   = 85°CA<br>0.05 V GS = 4.5V<br>a 0.06 EEPPTOLLL<br>0.04<br>T   = 25°CA<br>0.03 Sees VGS = 10V 0.05 E L<br>0.02 fo, D [RAIN-SOURCE] E e<br>, 0.04 Li T   = -55°CA<br>0.01 ee ( [ON)] FEC ES<br>D [S]<br>R<br>0 TT 0.03 EEEEELE LLL<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6<br>ID, DRAIN CURRENT (A) I   , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance  Fig. 4  Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6<br>1.5<br>oe —————-—<br>1.4<br>1.3 VI D GS= = 10V 5.8A Ciss<br>y \ P|<br>1.2 fe V GS  = 4.5V<br>ID = 5A<br>1.1 See ONCE<br>1.0 TAT SSS Coss SS<br>0.9 Crss<br>—LwW ELE ————<br>0.8<br>Zo a<br>0.7 ATT<br>0.6<br>EEE EEE o a | | tt |<br>-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE  ( 癈 °C ) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 Typical Capacitance<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>C, CAPACITANCE (pF)<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-TO-SOURCE<br>R RESISTANCE (NORMALIZED)<br>DS(ON)<br>**----- End of picture text -----**<br>


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**DMN3051L** 

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3 10<br>2.5 IDI D =250 = 250A  礎<br>1<br>)<br>2 lO N [T(A] T   = 150°CA i A SY Ad |<br>0.1 T   = 125°CA<br>T   = 85°CA<br>1.5 OToS C [URRE] hESe ty<br>0.01 — iff} ef T   = 25°CA __|<br>1 ~ O [URCE] S Ay Ye ee T   = -55°CA<br>ee a ee ee ee<br>S<br>0.5 I [,] 0.001 — ff ff if<br>ee ee ee eee) ee ee<br>0 0.0001 —Jfif ff |<br>-50 -25 0 25 50 75 100 125 150 0.1 0.3 0.5 0.7 0.9 1.1<br>TA, AMBIENT TEMPERATURE  ( 癈 °C ) V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10 1.6<br>1.4<br>8 VIDDS  5.8= = 15VA 1.2 Note 5<br>1.0<br>6<br>0.8<br>4<br>0.6<br>0.4<br>2<br>0.2<br>0 0<br>0 2 4 6 8 10 0 50 100 150 200<br>Qg [, TOTAL GATE CHARGE ] (nC) TA, AMBIENT TEMPERATURE ((°C)  癈 )<br>Fig. 9 Gate Charge Fig. 10 Power Derating<br>1<br>Fa D = 0.7<br>D = 0.5<br>ETECT LTrtTH ET<br>D = 0.3<br>tHe er eer<br>LCN ITI PHATE<br>0.1 mm ATMLILITT<br>D = 0.1<br>CE ern _ er D = 0.9 Oe OQ OO<br>D = 0.05<br>PT rr re<br>CN eer ro RRθJAJA(t) = r(t) * R(t) = r(t) * Rθ JA He<br>0.01 0mL D = 0.02 D = 0.01 ee 24Nl  |OlETL | ELL El P(pkR) R θJA JA = 105 = 105 ℃癈 /W /W llAMee<br>EO, RA t1 A} HHH<br>Ye D = 0.005 LatoA a T J Lh - T A t =2 P * R JA (t) eeaHe<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>GS(TH)<br>, SOURCE CURRENT (A)<br>IS<br>, POWER DISSIPATION (W)<br>D<br>P<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

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**DMN3051L** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [446 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>All 7°<br>H<br>SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20 1.40 1.30<br>y‘TEa,U] tp !ut a a se=== C D  2.30 0.89  2.50 1.03  0.915 2.40<br>A M F  0.45  0.60  0.535<br>hae L L1 ==— G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903 1.10 1.025<br>L  0.45 0.61  0.55<br>— ===<br>L1  0.25 0.55 0.40<br>M  0.085 0.150 0.110<br>| 1L a<br>D a  0°  8°  --<br>F G a All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23** 

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**----- Start of picture text -----**<br>
Y<br>Y1 C<br>|<br>a aE<br>Po X Lu X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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DMN3051L Document number: DS31347 Rev. 6 - 2 

June 2019 © Diodes Incorporated 

**DMN3051L** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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DMN3051L Document number: DS31347 Rev. 6 - 2 

June 2019 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmn3051l-7/mosfet-n-ch-30v-4-5a-sot-23/dp/3943594RL)
---

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