# Power MOSFET, N Channel, 30 V, 7 A, 0.017 ohm, UDFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:2709534/)

**URL**: https://novapart.co/products/DMN3042LFDF-7/power-mosfet-n-channel-30-v-7-a-0017-ohm-udfn2020
**SKU**: DMN3042LFDF-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1180
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 700mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | UDFN2020 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7A |
| Drain Source On State Resistance | 0.017ohm |
| Gate Source Threshold Voltage Max | 1.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709534/)

## DIODES. 

## **DMN3042LFDF** 7 

## **30V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|30V|28mΩ @ VGS= 10V|7.0A|
||32mΩ @ VGS= 4.5V|6.5A|



## **Features and Benefits** 

- 0.6mm Profile – Ideal for Low Profile Applications 

- PCB Footprint of 4mm[2] 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- General Purpose Interfacing Switch 

- Power Management Functions 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 Per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

- Weight: 0.007 grams (Approximate) 

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eso U-DFN2020-6 (Type F)<br>Top View  Bottom View<br>**----- End of picture text -----**<br>


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D<br>G<br>[s] 3<br>© S<br>Pin Out<br>Bottom View  Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN3042LFDF-7|U-DFN2020-6(Type F)|3,000/Tape & Reel|
|DMN3042LFDF-13|U-DFN2020-6 (TypeF)|10,000/Tape &Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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**DMN3042LFDF** 

## **Marking Information** 

Site 1 

S7 = Product Type Marking Code YM = Date Code Marking **S7** Y = Year (ex: H = 2020) M = Month (ex: 9 = September) _ Date Code Key **Year 2016 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~ee~~ **Code** D … H I J K L M N O P R **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~e~~ **Code** 1 2 3 4 5 6 7 8 9 O N D ~~—— ee ee~~ ~~**e** e ee eeeeee ee ee~~ Site 2 S7 = Product Type Marking Code YWX = Date Code Marking **S7 O7** Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) ~~=~~ X = Internal Code (ex: U = Monday) Date Code Key 

**Year 2016 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~es~~ **Code** 6 … 0 1 ~~ee~~ 2 ~~ee~~ 3 ~~ee~~ 4 ~~ee~~ 5 ~~ee~~ 6 ~~ee~~ 7 ~~eee~~ 8 ~~ee~~ 9 **Week 1-26 27-52 53 Code** A-Z a-z z ~~of~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~ee~~ **Code** T U V W X Y Z 

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**DMN3042LFDF** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|||||||
|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|30|V|
|Gate-Source Voltage|VGSS|±12|V|
|Continuous Drain Current (Note 6) VGS = 10V|Steady State|TTAA = +25 = +70C C|ID|7.0 5.6|A|
|Maximum Continuous Body Diode Forward Current (Note 6)|IS|1.5|A|
|Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)|IDM|35|A|
|Avalanche Current (L = 0.1mH)|(Note 7)|IAS|13|A|
|Avalanche Energy|(L = 0.1mH)|(Note 7)|EAS|9|mJ|

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## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Total Power Dissipation (Note 5)|TA = +25°C|PD|0.7|W|
|Steady State|177|
|Thermal Resistance, Junction to Ambient (Note 5)|RJA|°C/W|
|t<10s|124|
|Total Power Dissipation (Note 6)|TA = +25°C|PD|2.1|W|
|Steady State|61|
|Thermal Resistance, Junction to Ambient (Note 6)|RJA|°C/W|
|t<10s|43|
|Thermal Resistance, Junction to Case|Steady State|RJC|9.3|°C/W|
|Operating and Storage Temperature Range|TJ,|TSTG|-55 to +150|°C|

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## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8)** Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — 100 nA VGS = 12V, VDS = 0V ~~—————————~~ **ON CHARACTERISTICS (Note 8)** Gate Threshold Voltage VGS(TH) 0.6 — 1.4 V VDS = VGS, ID = 250µA — 17 28 VGS = 10V, ID = 4.0A Static Drain-Source On-Resistance RDS(ON) —— 20 24 32 42 mΩ VVGSGS = 4.5V = 3.0V,, I IDD = 4.0A  = 4.0A — 28 50 VGS = 2.5V, ID = 4.0A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 1A ~~—_|~~ **DYNAMIC CHARACTERISTICS (Note 9)** Input Capacitance Ciss — 570 — Output Capacitance Coss — 63 — pF VDS = 15V, VGS = 0V f = 1.0MHz Reverse Transfer Capacitance Crss — ~~ee~~ 53 — ~~——~~ Gate Resistance Rg ~~Eas~~ — 3.2 — Ω VDS ~~E==~~ = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg — 13.3 — Total Gate CharGate-Source Charge g(e  VGS = 4.5V) QQggs —— 6.1 1.0 —— nC VDS = 15V, ID = 6.9A Gate-Drain Charge Qgd — 1.6 — Turn-On Delay Time tD(ON) — 1.5 — Turn-On Rise Time tR — 3.3 — VGS = 10V, VDD = 15V, Rg = 3Ω, ns Turn-Off Delay Time tD(OFF) — 13.9 — ID = 6.9A ~~SS~~ Turn-Off Fall Time tF — 4.9 — Body Diode Reverse Recovery Time tRR — 7.8 — ns IS = 5A, dI/dt = 100A/μs ~~a~~ Body Diode Reverse Recovery Charge QRR — 1.9 — nC IS = 5A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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**DMN3042LFDF** 

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30.0 20<br>18 VDS = 5V<br>25.0 VGS = 2.5V<br>f l VGS = 3.0V e 16<br>| f e<br>VGS=4.0V 14<br>20.0<br>I: VGS = 4.5V 12<br>VGS = 10.0V<br>15.0 fe 10<br>VGS = 2.0V<br>8<br>10.0 C—O TJ=125℃<br>6<br>TJ=85℃<br>4<br>5.0 TJ=150℃<br>f/ o —— 2 fh y TJ=25℃<br>VGS = 1.5V TJ=-55℃<br>0.0 p o 0 EH<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.028 0.2<br>ID = 5.8A<br>0.026 0.16<br>ID = 5.0A<br>0.024 VGS = 4.5V 0.12<br>0.022 0.08<br>0.02 VGS = 10V 0.04<br>0.018 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.04 1.8<br>VGS = 10VGS = 10V= 10V 150℃℃<br>0.035 1.6<br>Pee 125℃℃ e T ITT VGS = 4.5V, ID = 5.0A Y<br>0.03 1.4<br>ar O E VGS = 10V, ID = 5.8A<br>85℃℃<br>0.025 1.2<br>Tere TTT a a<br>0.02 25℃℃ 1 VGS = 2.5V, ID = 4.0A<br>0.015 $$ 0.8 ‘ aa<br>E TP -55℃℃ ) eet<br>0.01 0.6<br>0 TTT. 2 4 6 8 10 12 TTT 14 16 18 20 -50 ert -25 0 tt 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A)D, DRAIN CURRENT (A), DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>)(W )(W<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>)WW<br>, DRAIN-SOURCE ON-<br>DS(ON)<br>R RESISTANCE (NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.04<br>VGS = 10VGS = 10V= 10V 150℃℃<br>0.035<br>Pee e<br>125℃℃<br>0.03<br>ar<br>85℃℃<br>0.025<br>Tere TTT<br>0.02 25℃℃<br>$$<br>0.015<br>E TP -55℃℃ )<br>0.01<br>0 TTT. 2 4 6 8 10 12 TTT 14 16 18 20<br>ID, DRAIN CURRENT (A)D, DRAIN CURRENT (A), DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Temperature<br>)WW<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMN3042LFDF** 

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0.05 1.2<br>1.1<br>0.04 VGS = 2.5V, ID = 4.0A 1 ID = 1mA<br>7 ra 0.9 SS<br>VGS = 4.5V, ID = 5.0A oA oo: — | | |<br>0.8 ID = 250μA<br>0.03<br>MFR 0.7<br>oan 0.6 HERE SSS<br>0.02 a E SNe<br>0.5<br>ga ee ea<br>VGS = 10V, ID = 5.8A 0.4<br>0.01 P a et} 0.3 FT~=6EEEEEERS EEEELEE,<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>20<br>10000<br>VGS = 0V f=1MHz<br>16<br>ee e || — —<br>1000<br>12 P R Ciss<br>8<br>ff S n es<br>TJ = 85 [o] C 100 Coss<br>4 TJ = 150TJ = 125 [o] C [o] C TJ = 25 [o] C Crss<br>TJ = -55 [o] C<br>0 Dy ” 10 PSSSPt t<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 100<br>RDS(ON) Limited PW =100µs<br>8 WA e nNaan cent n<br>10<br>6<br>1<br>PW =1ms<br>4 VDS = 15V, ID = 6.9A PW =10ms<br>PW =100ms<br>0.1 TJ(Max) = 150 ℃<br>2 TC = 25 ℃ PW =1s<br>Single Pulse<br>DUT on 1*MRP Board PW =10s<br>0 0.01 VGS= 10V DC<br>0 2 4 6 8 10 12 14 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>)W , GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE ()<br>GS(TH)<br>V<br>DS(ON<br>R<br>Is, SOURCE CURRENT (A)<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMN3042LFDF** 

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1<br>SOG D=0.7 cca een as — a TT TT<br>D=0.5<br>BO ea<br>a MIN TTT PPD PPT<br>D=0.3<br>e n WY ol D=0.9 HIE ETT<br>0.1 TMITMM| INIT TAT TT<br>Pe D=0.1 a<br>oo nr Seo ee oe ee oot<br>at! || | | | | mm i TT<br>D=0.05<br>ag a aE ee<br>se ee a ee<br>I D=0.02 a<br>0.01 _— u | po je l a |OQLAN EEEGO OO ERINlOGGEINE GG OS[UTOG OO<br>E a D=0.01 SE Z<br>a a eeel eea PPi eey Ti tT Oe ee ee<br>D=0.005<br>A CER RθJA(t) = r(t) * RθJA al<br>| | et PT RθJA = 176℃/W ll<br>D=Single Pulse Duty Cycle, D = t1 / t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMN3042LFDF Datasheet number: DS38985 Rev. 2 - 2 

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**DMN3042LFDF** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type F)** 

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U-DFN2020-6<br>A1 A3 (Type F)<br>A Dim  Min  Max  Typ<br>A  0.57 0.63 0.60<br>Seating Plane A1  0.00 0.05 0.03<br>pL hte ——— A3 -  -  0.15<br>b  0.25 0.35 0.30<br>D D  1.95 2.05 2.00<br>D2  0.85 1.05 0.95<br>e3 e4<br>D2a 0.33 0.43 0.38<br>E  1.95 2.05 2.00<br>E2  1.05 1.25 1.15<br>k2 E2a  0.65 0.75 0.70<br>D2a e  0.65 BSC<br>z2<br>e2  0.863 BSC<br>D2 e3 0.70 BSC<br>E E2a E2 e4  0.325 BSC<br>k  0.37 BSC<br>k1 k1  0.15 BSC<br>k e2 L k2  0.36 BSC<br>z1 L  0.225 0.325 0.275<br>z  0.20 BSC<br>z1  0.110 BSC<br>z2  0.20 BSC<br>e b All Dimensions in mm<br>z(4x) t ale iste ==<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type F)** 

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X3<br>== C X Y<br>Value<br>Dimensions<br>(in mm)<br>noo} —— C  0.650<br>X  0.400<br>X1  0.480<br>Y3 Y2 Y1 Y4<br>X2  0.950<br>X3  1.700<br>Y  0.425<br>X1<br>Y1  0.800<br>Y2  1.150<br>Pin1<br>Y3  1.450<br>Y4  2.300<br>age X2 a<br>**----- End of picture text -----**<br>


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**DMN3042LFDF** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/dmn3042lfdf-7/mosfet-n-ch-30v-7a-udfn2020/dp/2709534)
---

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