# Power MOSFET, N Channel, 30 V, 15.4 A, 0.022 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943590RL/)

**URL**: https://novapart.co/products/DMN3032LE-13/power-mosfet-n-channel-30-v-154-a-0022-ohm-sot-223
**SKU**: DMN3032LE-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1630
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 15.4A |
| Drain Source On State Resistance | 0.022ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943590RL/)

**DMN3032LE** & **30V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on) max**|**ID**<br>**TA = +25°C**|
|30V|29mΩ @ VGS= 10V|5.6A|
||35mΩ @ VGS= 4.5V|4.8A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)**  **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- DC Motor Control DC-AC Inverters 

## **Mechanical Data** 

- Case: SOT223 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See diagram below 

- Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 

- Weight: 0.112 grams (approximate) 

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SOT223<br>**----- End of picture text -----**<br>


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D<br>G<br>S<br>Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|(Note 4)|||
|---|---|---|---|
|**Part Number**|**Qualification**|**Case**|**Packaging**|
|DMN3032LE-13|Standard|SOT223|2,500 / Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

= Manufacturer’s Marking N3032L = Marking Code **YWW YWW** YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site) **N3032L N3032L** ~ YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y= Year (ex: 3 = 2013) WW = Week (01 - 53) Date Code Key **Year 2013 2014 2015 2016 2017 2018 2019** ~~sr~~ **Code** A B C D E F G **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~tt~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 

1 of 6 **www.diodes.com** 

DMN3032LE Document number: DS36695  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**DMN3032LE** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage||VDSS|30|V|
|Gate-Source Voltage||VGSS|20|V|
|Continuous Drain Current (Note 5) VGS= 10V|TA= +25°C<br>TA= +70°C|ID|5.6<br>4.1|A|
||TC= +25°C<br>TC= +70°C|ID|15.4<br>12.1|A|
|Maximum Continuous BodyDiode Forward Current(Note 5)||IS|1.5|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)||IDM|25|A|



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.8|W|
||TA= +70°C||1.1||
|Thermal Resistance,Junction to Ambient(Note 5)||RJA|69|°C/W|
|Total Power Dissipation(Note 5)||PD|14|W|
|Thermal Resistance,Junction to Case(Note 5)||RJC|8.7|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|-|-|V|VGS= 0V,ID= 250A|
|Zero Gate Voltage Drain Current|IDSS|-|-|1|A|VDS= 30V,VGS= 0V|
|Gate-Source Leakage|IGSS|-|-|±100|nA|VGS=20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 6)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~<br>~~ee~~|1<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|2<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250A<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS (ON)<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|22<br>~~ee~~<br>~~ee~~|29<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 3.2A<br>~~ee~~|
|||-<br>~~ee~~<br>~~ee~~|27<br>~~ee~~<br>~~ee~~|35<br>~~ee~~||VGS= 4.5V,ID= 2.8A<br>~~ee~~|
|Forward Transfer Admittance<br>~~ee~~||Yfs|<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|7<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|S<br>~~ee~~|VDS= 5V,ID= 5.8A<br>~~ee~~|
|Diode Forward Voltage|VSD<br>~~ee~~|-<br>~~ee~~|0.7<br>~~ee~~|1.5|V|VGS= 0V,IS= 1A|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~———ee~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~ee~~|-<br>~~ee~~|498<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~<br>~~e~~|VDS= 15V, VGS= 0V<br>f = 1MHz<br>~~ee~~|
|Output Capacitance<br>~~———~~|Coss<br>~~ee~~|-<br>~~ee~~|52<br>~~ee~~|-<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~———~~<br>~~——~~|Crss<br>~~ee~~|-<br>~~ee~~|45<br>~~ee~~|-<br>~~ee~~<br>~~e~~|||
|Gate Resistnace<br>~~———~~<br>~~——~~|Rg<br>~~ee~~|-<br>~~ee~~|2.2<br>~~ee~~|-<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge<br>~~——— ~~<br>~~——~~|Qg<br> ~~ee~~|-<br>~~ee~~|11.3<br>~~ee~~|-<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~<br>~~ee~~|VDS= 15V, VGS= 10V,  ID= 5.8A<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~——~~|Qgs|-|1.4|-<br>~~e~~|||
|Gate-Drain Charge<br>~~——~~<br>~~—<——~~|Qgd|-|2.1|-<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~——~~<br>~~—<——~~|tD(on)|-|2.3|-<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDS= 15V, VGS= 10V,<br>RL= 2.6RG= 3<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~<br>~~—<——~~|tr|-|3.9|-<br>~~e~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—<——~~|tD(off)|-|10|-<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—<——~~|tf|-|1.9|-<br>~~ee~~|||



Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6 .Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 

2 of 6 **www.diodes.com** 

DMN3032LE Document number: DS36695  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**DMN3032LE** 

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20.0 20<br>VGS = 8V VDS = 5.0V<br>VGS = 4.0V<br>VGS = 3.0V<br>15.0 15<br>Pee) =  LLL<br>TA = 150°C<br>TA = 125°C<br>10.0 10<br>VGS = 2.5V TA = 85°C<br>wer) CO<br>TA = 25°C<br>5.0 5 TA = -55°C<br>pa of<br>VGS = 1.8V VGS = 2.0V<br>0.0 Vos 0 LAL LLL<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.180.2 Pt Tee Et ET 0.180.2 Tit<br>ID = 5.8A<br>yy fo<br>0.16 Pi 0.16 | | | t e ey<br>VGS = 2.5V<br>0.14 0.14<br>0.12 SEFC 0.12 (HOEECEESet te<br>0.1 0.1 I D = 4.8A<br>0.08 0.08<br>0.06 CAS 0.06 Ee<br>0.04 VGS = 4.5V 0.04<br>0.02 Se 0.02 AEE<br>VGS = 8V<br>0 MER 0 Fite tt EE te EE el<br>0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Transfer Characteristic<br>Drain Current and Gate Voltage<br>0.080 2<br>VGS = 4.5V<br>0.070 VGS  10= V<br>ID = 10A<br>TPE TTT}<br>0.060 PERE 1.5 aw<br>TA = 150°C<br>0.050 VGS = 4.5V<br>ID = 5A<br>0.040 TA = 125°C 1<br>TA = 85°C<br>0.030<br>TA = 25°C<br>0.020 FRSC 0.5 TT<br>TA = -55°C<br>0.010<br>0.000 Peet 0 LEE.<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs.  Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A) D<br>D  I<br> I<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMN3032LE Document number: DS36695  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**DMN3032LE** 

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0.06 2<br>1.8<br>0.05<br>TTT = 1.6 A<br>0.04 VGS ID = 5A = 4.5V 1.4 ID = 1mA<br>1.2<br>eR ID = 250µA<br>0.03 | | ee 1 CHAP SSS<br>VGS  10= V<br>ID = 10A 0.8<br>0.02<br>peer—— TT) | 0.6 6APt | tT | ftPSs|<br>0.4<br>0.01<br>PLE 0.2 REE<br>0 FETT Ty yy 0 a<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


Figure 8 Gate Threshold Variation vs. Ambient Temperature 

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20 1000<br>18 ee | ee —— Ciss<br>16<br>ee<br>14<br>TA = 150°C<br>12<br>es TA = 125°C  || a<br>10 hel TA = 85 ° C 100<br>8 T A  = 25°C<br>TA = -55°C C oss<br>6 fh<br>4 C rss<br>ff<br>| | | ||<br>2<br>f = 1MHz<br>0 o/s 10<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10<br>VDS = 15V<br>ID  5.8= A<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 11 Gate Charge<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)T<br>C<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMN3032LE Document number: DS36695  Rev. 1 - 2 

January 2014 © Diodes Incorporated 

**DMN3032LE** 

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1<br>D = 0.9<br>D = 0.7<br>PyPRONE D = 0.5 OoEEE [SE eere DOD ne dO eeeOTeee ial<br>PO D = 0.3 ceAAae |<br>0.1 BRS —S<br>D = 0.1 yosteeemaes coat ||<br>eer eA oe oe te<br>by D = 0.05 ote AAA tT<br>RE A<br>PTAA I ETT TTTP<br>0.01 eetaK D = 0.02 D = 0.01 |aLIN A SSSEITM EITMSSEITGNGOGO OO NNITENO 6S GG OO<br>Stem D = 0.005 SE<br>a EEE EEE HE EEEEEE<br>LZ D = Single Pulse R JA (t) = r(t) * R JA nl<br>Po R JA = 99°C/W ‘||<br>Duty Cycle, D = t1/ t2<br>0.001 httHarr<br>0.0001 0.001 0.01 0.1 1 TH 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

**==> picture [383 x 223] intentionally omitted <==**

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D<br>b1 Q<br>i= C<br>7[| Dim  Min SOT223 Max  Typ<br>ee ee<br>A 1.55  1.65  1.60<br>A1 0.010  0.15  0.05<br>E E1 ee ee<br>b 0.60  0.80  0.70<br>ee<br>b1 2.90  3.10  3.00<br>Gauge<br>Plane 4 a C 0.20  0.30  0.25<br>—Kt 0.25 p ee D 6.45  6.55  6.50<br>) es es<br>Seating L E 3.45  3.55  3.50<br>Plane E1 6.90  7.10  7.00<br>e1 b e -  -  4.60<br>a o e o e ee<br>e1 -  -  2.30<br>e L 0.85  1.05  0.95<br>ca ee ee<br>Q 0.84  0.94  0.89<br>ee<br>A A1 All Dimensions in mm<br>7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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kK X1 >|<br>Y1<br>Dimensions Value (in mm)<br>d L ty X1  3.3<br>C1<br>X2  1.2<br>Y1  1.6<br>Y2  1.6<br>Y2 C1  6.4<br>HG C2 8 C2  2.3<br>ak e 4<br>X2<br>DMN3032LE 5 of 6<br>Document number: DS36695  Rev. 1 - 2 www.diodes.com<br>**----- End of picture text -----**<br>


January 2014 © Diodes Incorporated 

**DMN3032LE** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN3032LE Document number: DS36695  Rev. 1 - 2 

January 2014 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmn3032le-13/mosfet-n-ch-30v-15-4a-sot-223/dp/3943590RL)
---

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