# Power MOSFET, N Channel, 30 V, 6.2 A, 0.025 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3589326RL/)

**URL**: https://novapart.co/products/DMN3028LQ-7/power-mosfet-n-channel-30-v-62-a-0025-ohm-sot-23
**SKU**: DMN3028LQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1620
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 860mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.2A |
| Drain Source On State Resistance | 0.025ohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3589326RL/)

**DMN3028LQ** 

## **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|30V|25mΩ@VGS= 10V|6.2A|
||28mΩ@VGS= 4.5V|5.8A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- ESD Protected Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DMN3028LQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Load Switch 

   - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- DC-DC Converters 

   - Terminal Connections: See Diagram 

- Power Management Functions 

|Power Management Functions||<br>Terminal Connections: See Diagram|<br>Terminal Connections: See Diagram||||
|---|---|---|---|---|---|---|
|||<br>Weight: 0.009 grams (Approximate)|||||
|SOT23|||||||
|ESD PROTECTED<br>D<br>G<br>S<br>**Gate Protection**<br>2<br>@<br>©|||||||
|Top View||**Diode**|Top View||Top View||
|||Equivalent Circuit|||||
|**Ordering Information** (Note 4)|||||||
||||||||
|**Part Number**||**Case**|**Packaging**||||
|DMN3028LQ-7||SOT23|3,000/Tape & Reel||||
|DMN3028LQ-13||SOT23|10,000/Tape||&Reel||



## **Ordering Information** (Note 4) 

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

4N7 = Product Type Marking Code Y or Y = Year (ex: H = 2020) M = Month (ex: 9 = September) ~~a~~ | Date Code Key **Year 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code** G H I J K L M N O P R S **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~—ee~~ **Code** 1 2 3 4 5 6 7 8 ~~ee~~ 9 O ~~ee~~ N D DMN3028LQ 1 of 7 April 2020 Document number: DS42375 Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

**DMN3028LQ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|6.2<br>4.9|A|
|Pulsed Drain Current(380µs Pulse,DutyCycle = 1%)|||IDM|40|A|
|Maximum BodyDiode Forward Current(Note 6)|||IS|2|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|0.86|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|146|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|1.4|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|88|°C/W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|13||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
|~~tf~~|||||||
|**Characteristic**<br>~~Pt~~|**Symbol**<br>~~Pt~~|**Min**<br>~~Pt~~|**Typ**<br>~~Pt~~<br>~~tf~~|**Max**<br>~~Pt~~<br>~~tf~~|**Unit**<br>~~Pt~~<br>~~tf~~|**Test Condition**<br>~~Pt~~|
|**OFF CHARACTERISTICS (Note 7)**<br>~~tf~~<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|30<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ep~~|IDSS<br>~~ep~~|—<br>~~ep~~|—<br>~~ep~~|1<br>~~ep~~|µA<br>~~ep~~|VDS= 24V, VGS= 0V<br>~~ep~~|
|Gate-Body Leakage<br>~~ep~~|IGSS<br>~~ep~~|—<br>~~ep~~|—<br>~~ep~~|±10<br>~~ep~~|µA<br>~~ep~~|VGS= ±16V, VDS= 0V<br>~~ep~~|
|**ON CHARACTERISTICS (Note 7)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|0.8<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|1.8<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~ee~~<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~<br>~~nN~~|—<br>—<br>—<br>~~ee~~<br>~~ee~~<br>~~I~~|16<br>19<br>47<br>~~ee~~<br>~~ee~~<br>~~OD~~|25<br>28<br>68<br>~~ee~~<br>~~ee~~<br>~~OD~~|mΩ<br>~~ee~~<br>~~ee~~<br>~~(OO~~|VGS= 10V, ID= 4.0A<br>VGS= 4.5V, ID= 3.5A<br>VGS= 2.5V,ID= 2.5A<br>~~ee~~<br>~~ee~~<br>~~(OO~~|
|Source-Drain Diode Forward Voltage<br>~~nD~~|VSD<br>~~nD~~<br>~~nN~~|—<br>~~ee~~<br>~~nD~~<br>~~I~~|0.7<br>~~ee~~<br>~~nD~~<br>~~OD~~|1.2<br>~~ee~~<br>~~nD~~<br>~~OD~~|V<br>~~ee~~<br>~~nD~~<br>~~(OO~~|VGS= 0V, IS= 1A<br>~~ee~~<br>~~nD~~<br>~~(OO~~|
|**DYNAMIC CHARACTERISTICS (Note 8)**<br>~~nN I~~<br>~~OD (OO (OO~~<br>~~RU~~<br>~~GO~~|||||||
|Input Capacitance<br>~~I~~<br>~~———~~|Ciss<br>~~I~~<br>~~RU~~<br>~~———~~|—<br>~~I~~<br>~~GO~~<br>~~———~~|680<br>~~I~~<br>~~———~~|—<br>~~I~~<br>~~———~~|pF<br>~~I~~<br>~~———~~|VDS= 15V, VGS= 0V<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~RU~~<br>~~———~~|—<br>~~GO~~<br>~~———~~|96<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|—<br>~~———~~|74<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~<br>~~OU~~|—<br>~~———~~<br>~~GO~~|1.7<br>~~———~~<br>~~I~~|—<br>~~———~~<br>~~I~~|Ω<br>~~———~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~———~~|
|Total Gate Charge(VGS= 10V)<br>~~I~~|Qg<br>~~I~~<br>~~OU~~|—<br>~~I~~<br>~~GO~~|10.9<br>~~I~~<br>~~I~~|—<br>~~I~~<br>~~I~~|nC<br>~~I~~|VDS= 15V, ID= 4A<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)|Qg<br>~~OU~~|—<br>~~GO~~|7.8<br>~~I ~~|—<br> ~~I~~|nC||
|Gate-Source Charge|Qgs|—|1.6|—|nC||
|Gate-Drain Charge<br>~~———~~|Qgd|—|4.8|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On Delay Time<br>~~PC~~<br>~~———~~|tD(ON)|—|6.7|—<br>~~ee~~|ns<br>~~ee~~|VDD= 15V, VGS= 10V,<br>RL= 15Ω, RG= 6Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~|tR|—|1.5|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~———~~|tD(OFF)|—|17.5|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~———~~|tF|—|10.4|—<br>~~ee~~|ns<br>~~ee~~||



Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

2 of 7 **www.diodes.com** 

DMN3028LQ Document number: DS42375 Rev. 2 - 2 

April 2020 © Diodes Incorporated 

**DMN3028LQ** 

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40.0 20<br>VGS = 4.0V<br>35.0 Be VGS = 4.5V VDS = 5V<br>30.0 VGS = 3.5V 15<br>25.0 f — VGS = 6.0V - ]-<br>VGS = 10V<br>20.0 10<br>© ae oe<br>VGS = 3.0V<br>15.0<br>10.0 VGS = 2.5V 5 TJ = 85℃<br>5.0 fa a TJ = 150℃ f TJ = 25℃<br>VGS = 1.8V VGS = 2.0V TJ = 125℃ TJ = -55℃<br>0.0 = 0<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.1 0.1<br>0.09 VGS = 2.5V 0.09 Pte tT | | tt |<br>0.08 0.08 Pt TE EE [ttt]<br>ID = 4.0A<br>0.07 0.07<br>0.06 0.06 ID = 3.5A<br>0.05 0.05 | Pt ttt<br>0.04 0.04 ID = 2.5A<br>0.03 VGS = 4.5V 0.03 HR| PtRRttt<br>0.02 0.02<br>PIN tt<br>0.01 VGS = 10V 0.01 P| |Pr<br>0 0 Pt tT Tt tT Tt Et<br>Z iLaenie<br>0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.035 2.2<br>VGS = 10V<br>0.03 TJ = 125℃ TJ = 150℃ 2<br>pd Pt | EE VGS = 10V, ID = 4.5A<br>1.8<br>0.025 | ae<br>VGS = 4.5V, ID = 3.5A<br>1.6<br>0.02 ee oy<br>TJ = 85℃<br>1.4<br>0.015 Pr eK<br>TJ = 25℃ 1.2<br>0.01<br>e TJ = -55℃ e 1<br>0.005 VGS = 2.5V, ID = 2.5A<br>rf f t 0.8 < ==<br>0 Pt | | | 0.6 eT}tT et<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Junction<br>Junction Temperature Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

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April 2020 © Diodes Incorporated 

**DMN3028LQ** [| 

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DMN3028LQ<br>DIODES [|<br>0.06 3<br>0.05 Pt | tt pe 2.5 ER<br>VGS = 2.5V, ID = 2.5A<br>0.04 TP T. 2 eTttteyttteyey<br>0.03 1.5 ID = 1mAD = 1mA= 1mA<br>VGS = 4.5V, ID = 3.5A<br>SS—__— ——__— |—— |— |——<br>0.02 1<br>e r S S<br>VGS = 10V, ID = 4.5A ID = 250μAD = 250μA= 250μA<br>0.01 ee 0.5 SS S<br>0 PEt EEL 0 pF LEE ELL ELL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)J, JUNCTION TEMPERATURE (℃), JUNCTION TEMPERATURE (℃)℃))<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature Temperature<br>30 10000<br>VGS = 0V f = 1MHz<br>| — a S S<br>25<br>20 ee 1000 ER ee Ciss<br>a<br>—————<br>15 — f|| ee \<br>Coss<br>10 Af 100 SS<br>[| e e e<br>TJ = 85 [o] C<br>5 TJ = 150 [o] C ji_— —a —— Crss a—<br>1 TJ = 25 [o] C ————————————<br>TJ = 125 [o] C<br>TJ = -55 [o] C<br>0 DL!)Z 10 aFf eefl |TT<br>0 0.3 0.6 0.9 1.2 1.5 0 10 20 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>100<br>10<br>R<br>LimitedDS(ON)DS(ON) PW = 100µsW = 100µs = 100µs<br>LINN A A fEY<br>8 10 PW = 1msW = 1ms = 1ms<br>6 Ht} SSSR Sa AHN HH<br>1 »ORYORYN OK NN OK NN NN PW = 10msW = 10ms = 10ms N OK NN OK NN NN<br>4 PW = 100msW = 100ms = 100ms SaSEEaSEEaa<br>TJ(Max) = 150J(Max) = 150= 150 ℃ SRN Baal<br>0.1 TC = 25C = 25 = 25 ℃ |HASAN ANSAHASAN ANSA ANSAA | SE<br>2 Single Pulse PW = 1sW = 1s = 1s<br>DUT on 1*MRP<br>VDS = 15V, ID = 4A Board PW = 10sW = 10s = 10s<br>VGS = 10VGS = 10V = 10V DC<br>0 0.01 SyCottCott 4AFCAFCFC<br>0 2 4 6 8 10 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


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3<br>2.5 ER<br>2 eTttteyttteyey<br>1.5 ID = 1mAD = 1mA= 1mA<br>——__— |—— |— |——<br>1<br>S S<br>ID = 250μAD = 250μA= 250μA<br>0.5 SS S<br>0 pF LEE ELL ELL<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)J, JUNCTION TEMPERATURE (℃), JUNCTION TEMPERATURE (℃)℃))<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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100<br>R<br>LimitedDS(ON)DS(ON) PW = 100µsW = 100µs = 100µs<br>LINN A A fEY<br>10 PW = 1msW = 1ms = 1ms<br>Ht} SSSR Sa AHN HH<br>1 »ORYORYN OK NN OK NN NN<br>PW = 10msW = 10ms = 10ms<br>PW = 100msW = 100ms = 100ms SaSEEaSEEaa<br>TJ(Max) = 150J(Max) = 150= 150 ℃ SRN Baal<br>0.1 TC = 25C = 25 = 25 ℃ |HASAN ANSAHASAN ANSA ANSAA | SE<br>Single Pulse PW = 1sW = 1s = 1s<br>DUT on 1*MRP<br>Board PW = 10sW = 10s = 10s<br>VGS = 10VGS = 10V = 10V DC<br>0.01 SyCottCott 4AFCAFCFC<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMN3028LQ Document number: DS42375 Rev. 2 - 2 

April 2020 © Diodes Incorporated 

**DMN3028LQ** | sd 

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1<br>TTeS a<br>em ot<br>rn)<br>a ert oh<br>at NNT ET PPP TT<br>D=0.5 D=0.9<br>PIYT TTTYN | I TE ETIITETH<br>D=0.3 a D=0.7 SETI UTI AMT IMT<br>LY<br>P MNs TTI<br>0.1 ee eelSA<br>D=0.1 a A A<br>PRee cP”eryFn<br>et TT rg<br>D=0.05<br>FeRAM LETHE CTEM THT TTT TTT<br>re SR ET TT<br>D=0.02<br>sg CUNEATE ETM TIME TTT ETT Ei<br>wz<br>0.01 OK D=0.01<br>OS EEE EE<br>D=0.005<br>etyA. eniill SSCoenccHe<br>7 | TTT TPTTTT<br>a D=Single Pulse a ill<br>RθJA(t) = r(t) * RθJA<br>RθJA = 145.3℃/W<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMN3028LQ Document number: DS42375 Rev. 2 - 2 

April 2020 © Diodes Incorporated 

**DMN3028LQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT23<br>**----- End of picture text -----**<br>


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All 7°<br>H<br>SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20  1.40  1.30<br>C  2.30  2.50  2.40<br>a D  0.89  1.03  0.915<br>A M F  0.45  0.60  0.535<br>Hise; JE L R; L1 EERE G  1.78  2.05  1.83<br>H  2.80 3.00 2.90<br>J  0.013 0.10 0.05<br>K  0.890 1.00 0.975<br>C B K1  0.903 1.10 1.025<br>L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>M  0.085 0.150  0.110<br>a  0°  8°  --<br>D<br>All Dimensions in mm<br>F G<br>wh ===><br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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Y<br>Sl<br>Y1 Fars C<br>Po X LC X1<br>**----- End of picture text -----**<br>


**==> picture [109 x 57] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions  Value (in mm)<br>C  2.0<br>X  0.8<br>X1  1.35<br>Y  0.9<br>Y1  2.9<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMN3028LQ Document number: DS42375 Rev. 2 - 2 

April 2020 © Diodes Incorporated 

**DMN3028LQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMN3028LQ Document number: DS42375 Rev. 2 - 2 

April 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN3028LQ-7/power-mosfet-n-channel-30-v-62-a-0025-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn3028lq-7/mosfet-n-ch-30v-6-2a-sot-23/dp/3589326RL)
---

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