# Power MOSFET, N Channel, 30 V, 5.3 A, 0.0135 ohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3943587RL/)

**URL**: https://novapart.co/products/DMN3027LFG-7/power-mosfet-n-channel-30-v-53-a-00135-ohm-powerdi
**SKU**: DMN3027LFG-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2250
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.3A |
| Drain Source On State Resistance | 0.0135ohm |
| Gate Source Threshold Voltage Max | 1.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943587RL/)

**DMN3027LFG** ST **N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI[® ]** 

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## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID **<br>**TA = +25°C**|
|30V|18.6mΩ @ VGS= 10V|8.0A|
||26.5mΩ @ VGS= 4.5V|6.5A|



## **Features** 

- Low RDS(ON) – ensures on state losses are minimized 

- Small form factor thermally efficient package enables higher density end products 

- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 

- 100% UIS (Avalanche) Rated 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- 100% Rg Tested 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- Backlighting 

- DC-DC Converters 

- Power Management Functions 

## **Mechanical Data** 

- Case: POWERDI[®] 3333-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram Below 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.072 grams (Approximate) 

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<br>POWERDI [®] 3333-8  D<br>S Pin 1<br>S<br>S<br>G<br>G<br>D<br>D D S<br>@sS D ©<br>Top View  Bottom View  Equivalent Circuit<br> Information (Note 4)<br>Part Number  Case  Packaging<br>DMN3027LFG-7  POWERDI [®] 3333-8  2,000 / Tape & Reel<br>DMN3027LFG-13  POWERDI [®] 3333-8  3,000 / Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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N37 = Product Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 for 2015) WW = Week Code (01 – 53) 

POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 

1 of 7 **www.diodes.com** 

October 2015 © Diodes Incorporated 

**DMN3027LFG** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**<br>~~——_—————————~~|||**Symbol**<br>~~——_—————————~~<br>~~a~~|**Value**<br>~~——_—————————~~<br>~~a~~|**Unit**<br>~~——_—————————~~|
|Drain-Source Voltage<br>~~——_—————————~~|||VDSS<br>~~——_—————————~~<br>~~a~~|30<br>~~——_—————————~~<br>~~a~~|V<br>~~——_—————————~~|
|Gate-Source Voltage<br>~~——_—————————~~|||VGSS<br>~~——_—————————~~<br>~~a~~|±25<br>~~——_—————————~~<br>~~a~~|V<br>~~——_—————————~~|
|Continuous Drain Current (Note 5) VGS= 10V<br>~~a~~|Steady<br>State<br>~~a~~|TA = +25°C<br>TA = +70°C<br>~~a~~|ID<br>~~a ~~<br>~~a~~|5.3<br>4.2<br> ~~a~~<br>~~a~~|A<br>~~a~~|
|Continuous Drain Current (Note 6) VGS= 10V<br>~~a~~<br>~~Se~~|Steady<br>State<br>~~a~~|TA = +25°C<br>TA = +70°C<br>~~a~~|ID<br>~~a~~|8.0<br>6.3<br>~~a~~|A<br>~~a~~|
|Continuous Drain Current (Note 6) VGS= 10V<br>~~Se~~<br>~~Se~~|t10s|TA = +25°C<br>TA = +70°C|ID|9.5<br>7.7|A|
|Continuous Drain Current (Note 6) VGS= 4.5V<br>~~Se~~<br>~~Se~~<br>~~Se~~|Steady<br>State|TA = +25°C<br>TA = +70°C|ID|6.5<br>4.9|A|
|Continuous Drain Current (Note 6) VGS= 4.5V<br>~~Se~~<br>~~Se~~|t10s|TA = +25°C<br>TA = +70°C|ID|7.8<br>6.2|A|
|Pulsed Drain Current(Note 7)<br>~~Se~~|||IDM|70|A|
|Avalanche Current(Notes 7 & 8)<br>~~QQ~~|||IAR<br>~~QQ~~|18<br>~~QQ~~|A<br>~~QQ~~|
|Repetitive Avalanche Energy (Notes 7 & 8)L = 0.1mH|||EAR|16|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Power Dissipation(Note 5)|PD|1.0|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 5)|RθJA|130.6|°C/W|
|Power Dissipation(Note 6)|PD|2.07|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 6)|RθJA|62.5|°C/W|
|Power Dissipation(Note 6)t10s|PD|3.0|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 6)t10s|RθJA|43.8|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided. 

7. Repetitive rating, pulse width limited by junction temperature. 

8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~_~~|**Symbol**<br>|**Min**<br>|**Typ**<br>|**Max**<br>|**Unit**<br>|**Test Condition**<br>|
|**OFF CHARACTERISTICS(Note 9)**<br>~~_~~|||||||
|Drain-Source Breakdown Voltage<br>~~_~~|BVDSS<br>|30<br>|-<br>|-<br>|V<br>|VGS= 0V,ID= 250µA<br>|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~_————————————————~~|IDSS<br>~~————————————————~~|-<br>~~————————————————~~|-<br>~~————————————————~~|100<br>~~————————————————~~|nA<br>~~————————————————~~|VDS= 30V,VGS= 0V<br>~~————————————————~~|
|Gate-Source Leakage<br>~~————————————————~~|IGSS<br>~~————————————————~~|-<br>~~————————————————~~|-<br>~~————————————————~~|±100<br>~~————————————————~~|nA<br>~~————————————————~~|VGS= ±25V,VDS= 0V<br>~~————————————————~~|
|**ON CHARACTERISTICS(Note 9)**<br>~~OO~~|||||||
|Gate Threshold Voltage<br>~~DN~~<br>~~—_——~~|VGS(TH)<br>~~DN~~<br>~~ee~~|0.9<br>~~DN~~<br>~~OO~~|1.2<br>~~DN~~<br>~~OO~~|1.8<br>~~DN~~<br>~~OO~~|V<br>~~DN~~|VDS= VGS,ID= 250μA<br>~~DN~~|
|Static Drain-Source On-Resistance<br>~~es~~<br>~~—_——~~|RDS(ON)<br>~~es~~<br>~~ee~~|-<br>~~OO~~<br>~~es~~|13.5<br>~~OO~~<br>~~es~~|18.6<br>~~OO~~<br>~~es~~|mΩ<br>~~es~~|VGS= 10V,ID= 10A<br>~~es~~|
|||-<br>~~es~~|22<br>~~es~~|26.5<br>~~es~~||VGS= 4.5V,ID= 7.5A<br>~~es~~|
|Diode Forward Voltage<br>~~es~~<br>~~—_——~~|VSD<br>~~es~~<br>~~ee~~|-<br>~~es~~|0.7<br>~~es~~|1.0<br>~~es~~|V<br>~~es~~|VGS= 0V,IS= 1A<br>~~es~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~ee~~<br>~~—_——~~|||||||
|Input Capacitance<br>~~—_——~~|Ciss<br>~~ee~~|-|580|-|pF<br>~~—————~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~—————~~|
|Output Capacitance<br>~~—_——~~|Coss<br>~~ee~~|-|110|-|||
|Reverse Transfer Capacitance<br>~~—_——~~<br>~~—————~~|Crss<br>~~ee~~<br>~~—————~~|-<br>~~—————~~|70<br>~~—————~~|-<br>~~—————~~|||
|Gate Resistance<br>~~—_——~~<br>~~—————~~|Rg<br>~~ee~~<br>~~—————~~|-<br>~~—————~~|2.0<br>~~—————~~|3.0<br>~~—————~~|Ω<br>~~—————~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~—————~~|
|Total Gate Charge VGS= 4.5V<br>~~—————~~|Qg<br>~~—————~~|-<br>~~—————~~|5.3<br>~~—————~~|-<br>~~—————~~|nC<br>~~—————~~<br>~~ee~~|VGS= 4.5V,VDS= 15V,ID= 10A<br>~~—————~~|
|Total Gate Charge VGS= 10V|Qg|-|11.3|-||VGS= 10V, VDS= 15V,<br>ID= 10A<br>~~ee~~|
|Gate-Source Charge|Qgs|-|1.9|-|||
|Gate-Drain Charge<br>~~—<—<—~~|Qgd|-|1.9|-<br>~~ee~~|||
|Turn-On DelayTime<br>~~—<—<—~~|tD(ON)|-|4.4|-<br>~~ee~~|ns<br>~~ee~~|VGS= 10V, VDS= 15V,<br>RL= 15Ω, RG= 6Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—<—~~|tR|-|4.6|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<—<—~~|tD(OFF)|-|19.5|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<—<—~~|tF|-|5.8|-<br>~~ee~~|ns<br>~~ee~~||



POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 

2 of 7 **www.diodes.com** 

October 2015 © Diodes Incorporated 

**DMN3027LFG** 

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30.0  30<br>VGS = 10.0V VGS = 4.0V VDS = 5.0V<br>25.0 20.0  [ LfFE VGS = 4.5V 2520 PELE f eLAT<br>15.0  15<br>VGS = 3.5V<br>a PEE EEE LL<br>10.0  Lf 10 fe<br>5.0  VGS = 3.0V 5 TA = 125 ℃ TA = 85 ℃<br>[yf TA = 150 ℃ TA = 25 ℃<br>VGS = 2.5V TA = -55 ℃<br>0.0  L—_ 0 KF<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.032 0.05<br>0.045 VGS = 4.5V<br>0.028<br>0.04 TA = 150 ℃<br>0.024 TA = 125 ℃<br>0.035<br>0.02 OO VGS = 4.5V 0.03 ae<br>0.016 0.025 TA = 85 ℃<br>0.012 — — 0.02 — TA = 25 ℃ —<br>VGS = 10V 0.015<br>0.008 TA = -55 ℃<br>S SS ] 0.01 EE RE<br>0.004<br>0.005<br>0 a 0 ee<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A)  ID, DRAIN CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical On-Resistance vs. Drain Current and<br>Gate Voltage  Temperature<br>1.6 0.04<br>VGS = 10V, ID = 10A 7 0.035 TTT TLL<br>1.4<br>0.03<br>Ht ee VGS = 4.5V, ID = 5A .<br>0.025<br>1.2<br>A T) VGS = 4.5V, ID = 5A 0.02 er e<br>1<br>0.015<br>BEV aren per er<br>0.01 VGS = 10V, ID = 10A<br>0.8<br>Pet) 0.005 P eer s<br>0.6 CLE EEL EL 0 CEE EEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. On-Resistance Variation with Temperature Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(Ω)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


Figure 6. On-Resistance Variation with Temperature 

POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 

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**DMN3027LFG** 

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2 30<br>ID = 1mA 25<br>1.5 mae | | |fd<br>20 TA = 25 [o] C<br>ID = 250μA<br>c an e S E H<br>1 oo , 15 EF H E<br>10<br>0.5 Py yy dd PT | | lp<br>5<br>0 LELELEL)) 0  Ge 0 te ae<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2<br>TJ, JUNCTION TEMPERATURE ( ℃ ) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 8. Diode Forward Voltage vs. Current<br>Figure 7. Gate Threshold Variation vs. Temperature<br>10000 1000<br>f=1MHz<br>== —————<br>Ciss<br>1000<br>s TA = 150 [o] C e =<br>2 ——— \\N<br>Coss<br>100 100<br>= TA = 125 [o] C = e e e<br>Crss<br>TA = 85 [o] C<br>10<br>a ——. ——<br>= = a<br>TA = 25 [o] C<br>1 FF ff 10  Ff| ft ff<br>0 10 20 30 0 4 8 12 16 20<br>VDS, Drain-SOURCE VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Typical Leakage Current vs. Drain-Source  Figure 10. Typical Total Capacitance<br>Voltage<br>10 400<br>350<br>Single Pulse<br>8 Ty 300 een RR  JA JA(t)  = 60 = r (t) C/W * R JA<br>TJ - TA = P * RJA(t)<br>250 Bi0<br>6 TIL IAL/ \<br>200<br>4 oyYY VDS = 15V, ID = 10A 7 150 CCCBT 0 A<br>100<br>2 vane 7 BNC 1ANE<br>50<br>0 APT TTT 0 ECACCBn TC<br>0.0001 0.001 0.01 0.1 1 10 100 1,000<br>0 2 4 6 8 10 12 14 16 t1, PULSE DURATION TIME (sec)<br>Qg, Gate Charge (nC) Figure 12. Single Pulse Maximum Power Dissipation Fig. 2 Single Pulse Maximum Power Dissipation<br>Figure 11. Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, CAPACITANCE (pF)<br>T<br>C<br>, LEAKAGE CURRENT (nA)<br>IDSS<br> GATE VOLTAGE (V)<br>GS<br>V<br>(PK)<br>, PEAK TRANSIENT POIWER (W)<br>P<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 

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**DMN3027LFG** [i 

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100 ——— ag 100 SS = SE<br>a RDS(ON) Limited ootee eo PW =10µs ee RDS(ON) Limited — eeeea PW =100µs ee:<br>5a NN SSpT pta eeeNE....- NEL l<br>10 AONSS =eensTINN\ | 10 NN EARNOKKN<br>Sis ra " Z| |S iN Nps NIA NJ IN<br>PW =100µs<br>1 ;===pT—a| PW =1msPW =10ms SRS PW =100ms aN P SOSORIE W SON  =1s LINZNNNCAS@S\ASSNNONNSE\ MRSETRail 1 poa.—_|mn—— PW =1msPW =10ms SRS PW =100ms OSU P KONO W SOREN  =1s GOSSNENANOEANTTINWRXNGONEONESJ EllPotMBGSEPTTTT Ty<br>0.1 USS! 0.1 LOSS!<br>TJ(Max) = 150 ℃  TA = 25 ℃ PW =10s                                                                                                                          NEE TJ(Max) = 150 ℃  TA = 60 ℃ EEE NN<br>Single PulseDUT on 1*MRP Board tt TT DC 7EePT TT TTT Single PulseDUT on 1*MRP Board PW ienn<br>DC<br>VGS = 10V VGS = 4.5V<br>0.01 0.01<br>0.1 1 10 100 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 13. SOA, Safe Operation Area Figure 14. SOA, Safe Operation Area<br>1 SeSaia, Mi maim —<== =!Vc—>~...-——— eeeinne<br>eaece ee<br>D=0.5<br>F ro a a<br>e e Nem<br>D=0.3 UM TTT TTI | mr TETET<br>esa V D=0.9<br>0.1 P e a atilLo. LG | D=0.7<br>o<br>D=0.1 yee<br>PO CE EE HH<br>|<br>D=0.05 ooh d e<br>Fi t Amy LT TT ST TTTT)<br>ee Al<br>N LL<br>D=0.02<br>0.01 e Zz F D=0.01 oP,eWA740ia sOaUIOOe|PETTITT aOO OeOs  PETITEOefe  EET<br>P e | peep po ye ey<br>ees ATee<br>FH D=0.005 EL RθJA(t) = r(t) * RθJA Yt TT<br>ee ff fe pe fpf RθJA = 60 ℃ /W all<br>D=Single Pulse Duty Cycle, D = t1 / t2<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 15. Transient Thermal Resistance<br>, DRAIN CURRENT (A)<br>ID , DRAIN CURRENT (A)<br>ID<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 

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**DMN3027LFG** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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POWERDI [®] 3333-8<br>**----- End of picture text -----**<br>


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A1 A3<br>A<br>Seating Plane POWERDI [®] 3333-8<br>Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>Ges D } os A1  0.00 0.05 0.02<br>L(4x) A3   0.203<br>D2 b  0.27  0.37  0.32<br>1 b2    0.20<br>D  3.25 3.35 3.30<br>Pin #1 ID D2  2.22  2.32  2.27<br>E  3.25 3.35 3.30<br>E2  1.56 1.66 1.61<br>E b2(4x) e   0.65<br>E2 e1 e1  0.79 0.89 0.84<br>L  0.35 0.45 0.40<br>L1    0.39<br>z    0.515<br>8 All Dimensions in mm<br>z(4x) b<br>e L1(3x)<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

## **POWERDI[®] 3333-8** 

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Dimensions Value (in mm)<br>C 0.650<br>X  0.420<br>X1  0.420<br>X2  0.230<br>X3  2.370<br>Y  0.700<br>Y1  1.850<br>Y2  2.250<br>Y3  3.700<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 

6 of 7 **www.diodes.com** 

October 2015 

© Diodes Incorporated 

**DMN3027LFG** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 

7 of 7 **www.diodes.com** 

October 2015 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN3027LFG-7/power-mosfet-n-channel-30-v-53-a-00135-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn3027lfg-7/mosfet-n-ch-30v-5-3a-powerdi-3333/dp/3943587RL)
---

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