# Power MOSFET, N Channel, 30 V, 25 A, 0.013 ohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3943584/)

**URL**: https://novapart.co/products/DMN3025LFV-13/power-mosfet-n-channel-30-v-25-a-0013-ohm-powerdi
**SKU**: DMN3025LFV-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1090
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 900mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 25A |
| Drain Source On State Resistance | 0.013ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943584/)

## **DMN3025LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX)** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|30V|18mΩ @ VGS= 10V|25A|
||30mΩ @ VGS= 4.5V|20A|



## **Features and Benefits** 

- Low RDS(ON) – Ensures On State Losses are Minimized 

- Small Form Factor Thermally Efficient Package Enables Higher Density End Products 

- Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

## **Mechanical Data** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- Case: PowerDI[®] 3333-8 (Type UX) 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.072 grams (Approximate) 

PowerDI3333-8 (Type UX) 

Top View 

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Pin1  D<br>S S S G<br>G<br>S<br>D D D D<br>Bottom View  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN3025LFV-7|PowerDI3333-8 (Type UX)|2,000/Tape & Reel|
|DMN3025LFV-13|PowerDI3333-8 (Type UX)|3,000/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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L25<br>YYWW<br>**----- End of picture text -----**<br>


L25= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|30|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= 10V|TC= +25°C<br>TC= +70°C|ID|25<br>20|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)||IDM|55|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)||IS|3|A|
|Avalanche Current,L = 0.1mH(Note 8)||IAS|14|A|
|Avalanche Energy,L = 0.1mH(Note 8)||EAS|9.8|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.9|W|
|Thermal Resistance,Junction to Ambient(Note 5)|Steady State|RJA|146|°C/W|
|Total Power Dissipation(Note 6)||PD|2.2|W|
|Thermal Resistance, Junction to Ambient(Note 6)|Steady State|RJA|57|°C/W|
|Thermal Resistance, Junction to Case(Note 7)||RJC|4.5||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 9)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|-|-|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current|IDSS|-|-|1|μA|VDS= 30V,VGS= 0V|
|Gate-Source Leakage|IGSS|-|-|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 9)**|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1.0<br>~~ee~~|-<br>~~ee~~|2.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|-<br>~~ee~~|13<br>~~ee~~|18<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 7A<br>~~ee~~|
|||-<br>~~ee~~|21<br>~~ee~~|30<br>~~ee~~||VGS= 4.5V,ID= 7A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|-<br>~~ee~~|0.7<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 1A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|-<br>~~———~~|500<br>~~———~~|-<br>~~———~~|pF<br>~~———~~|VDS= 15V, VGS= 0V,<br>f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|-<br>~~———~~|72<br>~~———~~|-<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|-<br>~~———~~|57<br>~~———~~|-<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~<br>~~———~~|Rg<br>~~———~~|-<br>~~———~~|1.9<br>~~———~~|-<br>~~———~~<br>~~ee~~|Ω<br>~~———~~<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~eee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~|Qg|-|4.6|-<br>~~ee~~|nC<br>~~ee~~|VDS= 15V, ID= 10A<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~———~~|Qg|-|9.8|-<br>~~ee~~|nC<br>~~ee~~||
|Gate-Source Charge<br>~~———~~|Qgs|-|1.6|-<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~———~~<br>~~—<_—~~|Qgd|-|2.0|-<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~———~~<br>~~—<_—~~|tD(ON)|-|3.9|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDD= 15V, VGS= 10V,<br>Rg= 6Ω, ID= 1A<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~—<_—~~|tR|-|4.2|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<_—~~|tD(OFF)|-|16.6|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<_—~~|tF|-|5.8|-<br>~~ee~~|ns<br>~~ee~~||
|Body Diode Reverse Recovery Time<br>~~—<_—~~<br>~~a~~|tRR<br>~~a~~|-<br>~~a~~|5.6<br>~~a~~|-<br>~~ee~~<br>~~a~~|ns<br>~~ee~~<br>~~a~~|IF= 12A, di/dt = 100A/μs<br>~~ee~~<br>~~a~~|
|BodyDiode Reverse RecoveryCharge<br>~~a~~|QRR<br>~~a~~|-<br>~~a~~|2.6<br>~~a~~|-<br>~~a~~|nC<br>~~a~~||



Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 

7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

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30.0  30<br>VGS = 4.5V VDS = 5.0V<br>25.0  TK S VGS=5.0V 25 y e<br>20.0  VGS = 4.0V 20<br>VGS = 10.0V TJ=125 ℃<br>15.0  a 15 COE ACE<br>Wo VGS = 3.5V |<br>10.0  Wm 10<br>VGS = 3.0V<br>5.0  5 TJ=150 ℃ TJ=85 ℃<br>VGS = 2.5V TJ=25 ℃<br>0.0  f Aaee 0 cane’KE T 4am J=-55 ℃<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>Figure 2. Typical Transfer Characteristic<br>0.03 0.1<br>0.025 r_ e VGS = 4.5V 0.08 ee<br>0.02<br>0.06<br>0.015 S ee get<br>VGS = 10V 0.04<br>0.01 ——_—§—— Lae<br>_ 0.02 KEL ID = 10A EEL<br>0.005 e e N E R<br>0 Ss es 0<br>0 5 10 15 20 3 4 5 6 7 8 9 10<br>ID, DRAIN-SOURCE CURRENT (A) Figure 4. Typical On-Resistance vs. Drain Current and Gate VGS, GATE SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Voltage<br>Gate Voltage<br>0.08 1.6<br>VGS = 4.5V<br>0.07 VGS = 10V, ID = 10A<br>H+} | | | 1.4 — LY<br>0.06<br>TJ=150 ℃<br>0.05 TJ=125 ℃ 1.2<br>TJ=85 ℃<br>0.04 Hoe | ee<br>1<br>0.03 ee ae<br>0.02<br>TJ=25 ℃ TJ=-55 ℃ 0.8<br>0.01 = n VGS = 4.5V, ID = 10A e<br>0 ee 0.6 Pp eet dl<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)W<br>)(W<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)(W<br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.04 2<br>1.8<br>0.035 P| | | ft td me<br>1.6<br>0.03 ID = 1mA<br>VGS = 4.5V, ID = 10A ea 1.4 S S<br>0.025<br>1.2<br>ID = 250μA<br>0.02 eeeaes 1 SE rf SSS<I Y<br>0.8<br>0.015<br>0.6<br>0.01 VGS = 10V, ID = 10A 0.4<br>0.005<br>0.2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>**----- End of picture text -----**<br>


Figure 7. On-Resistance Variation with Temperature 

Figure 8. Gate Threshold Variation vs. Junction Temperature 

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30 10000  eeee ee<br>f=1MHz<br>VGS = 0V —————<br>2520 et tt ft ft 1000  Ee F eeeshes<br>Ciss<br>t L<br>( —<br>15 Ce eees<br>SR eses<br>10 100  N e Coss e<br>ee | ——<=<_<_..__ eee<br>5 TA = 25 [o] C re eee Crss a eee|<br>0 LS 10  eO Se<br>0 0.2 0.4 0.6 0.8 1 1.2 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 100<br>RDS(ON) Limited PW =100µs<br>Po yee NK<br>8 a ee<br>10<br>6 Po NSN SK RONBGR<br>1 PW =1ms PSN TKN<br>4 VDS = 15V, ID = 10A ; PW =10msPW =100ms PSNNG<br>| | PW =1s SKN, BGG<br>2 0.1 TJ(Max) = 150 ℃  TC = 25 ℃ SSN<br>Single Pulse<br>DUT on 1*MRP Board PW > SiER<br>0 0.01 VGS= 10V lll DC Baill BRRG<br>0 2 4 6 8 10 12 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>Figure 11. Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>I D=0.7<br>D=0.5<br>PT) TI eoeeTTT ttlTTT<br>PA D=0.3 —ETT TTTT| rNee 1Ae EE<br>D=0.9<br>AI ae |<br>0.1<br>D=0.1 LAMM Le cccomrt II EU<br>erttrimeg<br>D=0.05<br>FH HET |AIT| | MTT it} ST ETT |<br>AT<br>I EP<br>D=0.02<br>oe<br>0.01 a D=0.01 a<br>e o<br>T E<br>a D=0.005 ee<br>a a RθJA(t) = r(t) * RθJA mai<br>D=Single Pulse RθJA = 146 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI3333-8 (Type UX)<br>D<br>A<br>D1 A1<br>PowerDI3333-8<br>(Type UX)<br>Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>E1 E<br>A1  0.00 0.05 --<br>b 0.25 0.40 0.32<br>c 0.10 0.25 0.15<br>D  3.20 3.40 3.30<br>D1  2.95 3.15 3.05<br>ch c D2  2.30 2.70 2.50<br>pe] E  3.20 3.40 3.30<br>L E1  2.95 3.15 3.05<br>E2  1.60 2.00 1.80<br>E2a E2b E2a  0.95 1.35 1.15<br>E2 E2b  0.10 0.30 0.20<br>cy ====<br>e  0.65 BSC<br>k  0.50 0.90 0.70<br>L  0.30 0.50 0.40<br>k D2 θ  0°  12°  10°<br>L All Dimensions in mm<br>b<br>e<br>ae<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>0<br>**----- End of picture text -----**<br>


## **PowerDI3333-8 (Type UX)** 

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X3<br>X2<br>8<br>Y4<br>Y1 X1<br>Y2<br>Y3<br>ET<br>Y<br>1<br>X 900 C<br>|<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C  0.650<br>X  0.420<br>X1  0.420<br>X2  0.230<br>X3 2.370<br>Y  0.700<br>Y1  1.850<br>Y2  2.250<br>Y3  3.700<br>Y4  0.540<br>**----- End of picture text -----**<br>


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**DMN3025LFV** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

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