# Power MOSFET, N Channel, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943582/)

**URL**: https://novapart.co/products/DMN3024LK3-13/power-mosfet-n-channel-30-v-144-a-0024-ohm-to-252
**SKU**: DMN3024LK3-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1490
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 4.1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 14.4A |
| Drain Source On State Resistance | 0.024ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943582/)

**A Product Line of Diodes Incorporated** 

**DMN3024LK3** 

## **30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET** 

Please click here to visit our online spice models database. Please click here to visit our online spice models database. 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TA = 25**°**C**|
|30V|24mΩ@ VGS= 10V|14.4A|
||39mΩ@ VGS= 4.5V|11.6A|



## **Features and Benefits** 

- Low on-resistance 

- Fast switching speed 

- Low gate drive 

- “Green” component and RoHS compliant (Note 1) 

## **Mechanical Data** 

## **Description and Applications** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Backlighting 

- DC-DC Converters 

- Power management functions 

- Case: TO-252 (DPAK) 

- Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0  (Note 1) 

- Moisture Sensitivity: Level 1 per J-STD-020D 

- Terminals Connections: See Diagram 

- Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- Marking Information: See Below 

- Ordering Information: See Below 

- Weight: 0.33 grams (approximate) 

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## **Ordering Information** (Note 1) 

|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|DMN3024LK3-13|N3024L|13|16|2,500|



Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website.  For packaging details, go to our website. 

## **Marking Information** 

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YYWW<br>N3024L<br>**----- End of picture text -----**<br>


> = Manufacturer’s Marking Di N3024L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 

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**A Product Line of Diodes Incorporated** | **DMN3024LK3** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source voltage|||VDSS|30|V|
|Gate-Source voltage|||VGS|±20|V|
|Continuous Drain current|VGS= 10V|(Note 3)|ID|14.4|A|
|||TA=70°C(Note 3)||12.0||
|||(Note 2)||9.78||
|Pulsed Drain current|VGS= 10V|(Note 4)|IDM|46.5|A|
|Continuous Source current(Bodydiode)||(Note 3)|IS|12|A|
|Pulsed Source current(Bodydiode)||(Note 4)|ISM|46.5|A|



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power dissipation<br>Linear derating factor|(Note 2)|PD|4.1<br>32.5|W<br>mW/°C|
||(Note 3)||8.9<br>71.4||
||(Note 5)||2.17<br>17.4||
|Thermal Resistance, Junction to Ambient|(Note2)|RθJA|30.8|°C/W|
||(Note 3)||14.0||
||(Note 5)||57.6||
|Thermal Resistance,Junction to Lead|(Note 6)|RθJL|2.24||
|Operatingand storage temperature range||TJ,TSTG|-55 to 150|°C|



- Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

   3. Same as note 2, except the device is measured at t ≤ 10 sec. 

4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs.  The pulse current is limited by the maximum junction temperature. 

5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Thermal resistance from junction to solder-point (at the end of the drain lead). 

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**DMN3024LK3** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
—=222—_—_—_--——= R DS(on) R DS(on) SS<br>10 | Limit eS NN 10 aa Limit SNe<br>1 pf DC NO SS a 1 pr DC NEESSSO |<br>a 1s SS SNE Pa 1s SNE<br>PT 100ms Yt HSH a po 100ms ti AAS |<br>100m 100m<br>Et Tamb=25°C 10ms fT 1ms po Tamb=25°C 10ms 1ms ITZ TS<br>25mm x 25mm  | oye 50mm x 50mm  | yi<br>10m 1oz FR4 J 100µs 10m 2oz FR4 a 100µs<br>100m 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Safe Operating Area Safe Operating Area<br>35<br>6050 ZrZ 25mm x 25mm T1oz FR4 amb =25°C 0Loo1 AA 7A 30 fzZZ 50mm x 50mm  T 2oz FR4amb =25°C 8AEAE AA<br>25<br>a A A "A - ~|-f--HL<br>40 PUMCECT<br>D=0.5 =HE iM AMONTT 20 TAI D=0.5 ELH EFA FTFAeee<br>ee TZ”A<br>30<br>0 ff 15 SarrTMI Chae<br>ZA nT TTA 2g92, SANTO<br>20 D=0.2 D=0.1 10 D=0.2 D=0.1<br>cee eeVYee CINCMeDOAN SUT<br>100 arNFsooSemTtLITLLu Co erCCT mrs eae N Ih Single Pulse | D=0.05 miliMlIl il 50 CaPTT—tillereoa TnoreTTMTCc CoNSITIL Single PulseD=0.05 IImiul<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br> Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Transient Thermal Impedance<br>4.5<br>100 SUNA|a Single Pulse Tamb=25°C 4.03.5 eee 50mm x 50mm  2oz FR4<br>OTT 50mm x 50mm  nil 3.0 Po ING | |<br>Se 2oz FR4 2.5 7 25mm x 25mm  1oz FR4<br>BELnL il PN ||<br>10 OO aSS SN 2.0 a a<br>nCBElloA SSS| 1.51.0 Pee UN<br>0 | 25mm x 25mm  0 | —_——<br>1oz FR4 0.5<br>1 TINT i CoSAA 0.0 P NRo WS<br>100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160<br>Pulse Width (s)  Temperature (°C)<br>Pulse Power Dissipation Derating Curve<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br> Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br> Max Power Dissipation (W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|30<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|V<br>~~ee~~|ID= 250μA, VGS= 0V<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|0.5<br>~~ee~~|μA<br>~~ee~~|VDS= 30V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS=±20V, VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS**<br>~~ee~~<br>~~————~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1.0<br>~~ee~~|⎯<br>~~ee~~|3.0<br>~~ee~~<br>~~————~~|V<br>~~ee~~<br>~~————~~|ID= 250μA, VDS= VGS<br>~~ee~~<br>~~————~~|
|Static Drain-Source On-Resistance (Note 7)<br>~~ee~~|RDS (ON)<br>~~**I**D~~|⎯<br>~~(OD~~|⎯<br>~~(OD~~|0.024<br>~~————~~|Ω<br>~~————~~<br>~~(OO~~|VGS= 10V, ID= 7.0A<br>~~————~~|
|||||0.039<br>~~————~~<br>~~(OO~~||VGS= 4.5V, ID= 6.0A<br>~~————~~|
|Forward Transconductance (Notes 7 & 8)<br>~~ID~~<br>~~ee~~|gfs<br>~~ID~~<br>~~**I**D~~|⎯<br>~~ID~~<br>~~(OD~~|16.5<br>~~ID~~<br>~~(OD~~|⎯<br>~~————~~<br>~~ID~~<br>~~(OO~~|S<br>~~————~~<br>~~ID~~<br>~~(OO~~|VDS= 15V, ID= 7.0A<br>~~————~~<br>~~ID~~|
|Diode Forward Voltage (Note 7)<br>~~ee~~|VSD<br>~~**I**D~~|⎯<br>~~(OD~~|0.82<br>~~(OD~~|1.2<br>~~(OO~~|V<br>~~(OO~~|IS= 1.7A, VGS= 0V|
|Reverse recovery time (Note 8)<br>~~ee~~|trr<br>~~**I**D~~<br>~~II~~|~~(OD~~<br>~~ON~~|12<br>~~(OD~~<br>~~I~~|⎯<br>~~(OO~~<br>~~I~~|ns<br>~~(OO~~|IS= 2.2A, di/dt= 100A/μs|
|Reverse recovery charge (Note 8)<br>~~ee~~<br>~~nD~~|Qrr<br>~~**I**D~~<br>~~nD~~<br>~~II~~|⎯<br>~~(OD~~<br>~~nD~~<br>~~ON~~|4.8<br>~~(OD~~<br>~~nD~~<br>~~I~~|⎯<br>~~(OO~~<br>~~nD~~<br>~~I~~|nC<br>~~(OO~~<br>~~nD~~||
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~**I**D (OD (OO~~<br>~~ee~~<br>~~I I ON I~~<br>~~I~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|⎯<br>~~ee~~|608<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|VDS= 15V, VGS= 0V<br>f= 1MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|⎯<br>~~ee~~|132<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|⎯<br>~~ee~~|71<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~||
|Total Gate Charge<br>~~PE~~|Qg|⎯|12.9|⎯|nC|VDS= 15V, VGS= 10V<br>ID= 7A<br>~~ee~~|
|Gate-Source Charge|Qgs|⎯|2.5|⎯|nC||
|Gate-Drain Charge<br>~~——~~|Qgd|⎯|2.5|⎯<br>~~ee~~|nC<br>~~ee~~||
|Turn-On Delay Time (Note 9)<br>~~——~~|tD(on)|⎯|2.9|⎯<br>~~ee~~|ns<br>~~ee~~|VDD= 15V, VGS= 10V<br>ID= 1A, RG≅6.0Ω<br>~~ee~~|
|Turn-On Rise Time (Note 9)<br>~~——~~|tr|⎯|3.3|⎯<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time (Note 9)<br>~~——~~|tD(off)|⎯|16|⎯<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time (Note 9)<br>~~——~~|tf|⎯|8|⎯<br>~~ee~~|ns<br>~~ee~~||



8.   For design aid only, not subject to production testing. 

9.   Switching characteristics are independent of operating junction temperatures. 

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## **Typical Characteristics** 

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10V 5V T = 150°C 10V 4V V GS<br>4V<br>10 10 3.5V<br>3.5V 3V<br>2.5V<br>1 3V 1<br>2V<br>0.1<br>0.1<br>2.5V<br>iim T = 25°C Cee VGS 0.01 a 1.5V<br>0.01<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.6<br>10 VDS = 10V V GS  = 10V<br>PE 1.4 _ I D  = 7A _ R 7]<br>DS(on)<br>ee f A<br>1.2<br>eo ee ee oe<br>T = 150°C<br>1 ny 1.0<br>——— An A 0.8 Pm V<br>ey Ae ey a L————™f ~N GS(th)<br>T = 25°C 0.6 VGS = VDS<br>I D  = 250uA<br>0.1 a A ee 0.4 > —<br>2 3 4 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>1000<br>10<br>2.5V5VV<br>T = 25°C VGSGS<br>100<br>T = 150°C<br>1<br>3V<br>10 PtTUT|TUT|| TTT ee<br>3.5V<br>0.1 T = 25°C<br>1 SS aiiiilimmmasili aiiiilimmmasili aenanliammail 4V SEAS=<br>0.01<br>0.1<br>4.5V<br>10V Vgs = -3V<br>0.01 1E-3<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>ID  Drain Current (A)D  Drain Current (A)  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br>  Reverse Drain Current (A)<br>DS(on) ISD<br>**----- End of picture text -----**<br>


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1000<br>2.5V5VV<br>T = 25°C VGSGS<br>100<br>3V<br>10 PtTUT|TUT|| TTT<br>3.5V<br>1 SS aiiiilimmmasili aiiiilimmmasili aenanliammail 4V<br>0.1<br>4.5V<br>10V<br>0.01<br>0.01 0.1 1 10<br>ID  Drain Current (A)D  Drain Current (A)  Drain Current (A)<br>On-Resistance v Drain Current<br> Drain-Source On-Resistance (W)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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## **Typical Characteristics - continued** 

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900 10<br>800 HH VGS = 0V 9 I D  = 7A LEE<br>700600500400300200 eraSosstaSorHeeeCCooSoaaSy C ISS AaS— C OSS CooHtEee C RSS | f = 1MHz ——_r+H4_] 8765432 POPEPELEPELEPOLEPE===IY, fTCTOORVOVORWOnarcaqanlEEA TLL sncPAA/LETJ 4y, AA VDS pa  = 15V a Hl<br>100 1<br>2 ALLELE EEE<br>0 PE Sd 0 VE<br>1 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)   Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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Q G<br>wee .<br>V G Q GS Q GD<br>| |<br>Charge<br>————__<br>**----- End of picture text -----**<br>


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Current<br>regulator<br>|<br>12V 50k Same as<br>D.U.T<br>a Oe|<br>V DS<br>0.2nF oO1 IG |<br>D.U.T<br>ID<br>V GS<br>**----- End of picture text -----**<br>


## **Basic gate charge waveform** 

## **Gate charge test circuit** 

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V DS<br>90% R D<br>I I<br>I I V GS V DS<br>N\/ \ / f R G VDD<br>I<br>10%<br>V GS | Ni /\ | 1 Pulse width < 4 1pS<br>\¢>ie—>| | td(on) tr | || 4#— t d(off) 1+ tr |I Duty factor 0.1%<br>|4+———_> t(on) | |«<———_+ t(on) | I<br>**----- End of picture text -----**<br>


## **Switching time waveforms** 

## **Switching time test circuit** 

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## **Package Outline Dimensions** 

|**DIM**<br>~~a~~<br>~~a~~|**Inches**<br>~~ee~~<br>~~a~~|**Inches**<br>~~ee~~<br>~~a~~|**Millimeters**<br>~~ee~~<br>~~a~~|**Millimeters**<br>~~ee~~<br>~~a~~|**DIM**|**Inches**<br>~~eeee~~|**Inches**<br>~~eeee~~|**Millimeters**<br>~~eeee~~|**Millimeters**<br>~~eeee~~|
|---|---|---|---|---|---|---|---|---|---|
||**Min**<br>~~ee~~<br>~~a~~<br>~~ee~~|**Max **<br>~~ee~~<br>~~a~~<br>~~ss~~|**Min**<br>~~ee~~<br>~~a~~<br>~~ss~~|**Max **<br>~~a~~||**Min**<br>~~ee~~|**Max **<br>~~ee~~|**Min**<br>~~ee~~|**Max **<br>~~ee~~|
|**A**<br>~~a~~<br>~~a~~<br>~~ee~~|0.086<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~GO~~|0.094<br>~~ee~~<br>~~a~~<br>~~ss~~<br>~~GO~~|2.18<br>~~ee~~<br>~~a~~<br>~~ss~~<br>~~GO~~|2.39<br>~~a~~<br>~~GO~~|**e**<br>~~GO~~|0.090BSC<br>~~ee ee ~~<br>~~GO~~||2.29BSC<br> ~~ee ee~~<br>~~GO~~||
|**A1**<br>~~a~~<br>~~ee~~<br>~~es~~|-<br>~~ee ~~<br>~~GO~~<br>~~ee~~|0.005<br> ~~ss~~<br>~~GO~~<br>~~ee~~|-<br>~~ss~~<br>~~GO~~|0.127<br>~~GO~~|**H**<br>~~GO~~|0.370<br>~~GO~~|0.410<br>~~GO~~|9.40<br>~~GO~~|10.41<br>~~GO~~|
|**b**<br>~~ee~~<br>~~es~~<br>~~ee~~|0.020<br>~~GO~~<br>~~ee~~<br>~~ee~~|0.035<br>~~GO~~<br>~~ee~~<br>~~es es~~|0.508<br>~~GO~~<br>~~es~~|0.89<br>~~GO~~|**L**<br>~~GO~~|0.055<br>~~GO~~|0.070<br>~~GO~~|1.40<br>~~GO~~|1.78<br>~~GO~~|
|**b2 **<br>~~es ~~<br>~~ee~~<br>~~ee~~|0.030<br> ~~ee~~<br>~~ee~~<br>~~ss~~|0.045<br>~~ee~~<br>~~es es~~<br>~~ss~~|0.762<br>~~es~~<br>~~es~~|1.14<br>~~es~~|**L1**|0.108REF||2.74 REF||
|**b3**<br>~~ee~~<br>~~ee~~<br>~~a~~|0.205<br>~~ee ~~<br>~~ss~~<br>~~es~~|0.215<br> ~~es es~~<br>~~ss~~<br>~~es~~|5.21<br>~~es~~<br>~~es~~<br>~~ns~~|5.46<br>~~es~~|**L2**|0.020BSC||0.508BSC||
|**c**<br>~~ee ~~<br>~~a~~<br>~~ee~~<br>~~es~~|0.018<br> ~~ss~~<br>~~es~~<br>~~ss~~<br>|0.024<br>~~ss ~~<br>~~es~~<br>~~ss~~<br>|0.457<br> ~~es~~<br>~~ns~~<br>~~ss~~|0.61<br>~~es~~<br>~~ss~~|**L3**<br>~~ss~~<br>~~GO~~|0.035<br>~~ss~~<br>~~GO~~|0.065<br>~~ss~~<br>~~GO~~|0.89<br>~~ss~~|1.65<br>~~ss~~|
|**c2 **<br>~~a~~<br>~~ee~~<br>~~es~~<br>~~a~~|0.018<br>~~es~~<br>~~ss~~<br>~~es~~|0.023<br>~~es~~<br>~~ss~~<br>~~es~~|0.457<br>~~ns~~<br>~~ss~~<br>~~ns~~|0.584<br>~~ss~~|**L4**<br>~~ss~~<br>~~GO~~|0.025<br>~~ss~~<br>~~GO~~|0.040<br>~~ss~~<br>~~GO~~|0.635<br>~~ss~~|1.016<br>~~ss~~|
|**D**<br>~~ee~~<br>~~es~~<br>~~a~~<br>~~ee~~|0.213<br>~~ss~~<br>~~es~~<br>~~ee~~<br>|0.245<br>~~ss~~<br>~~es~~<br>~~es~~<br>|5.41<br>~~ss~~<br>~~ns~~<br>~~ns~~<br>|6.22<br>~~ss~~<br>~~ns~~<br>|**L5**<br>~~ss~~<br>~~GO~~<br>|0.045<br>~~ss~~<br>~~GO~~<br>|0.060<br>~~ss~~<br>~~GO~~<br>|1.14<br>~~ss~~<br>|1.52<br>~~ss~~<br>|
|**D1**<br>~~es ~~<br>~~a~~<br>~~ee~~|0.205<br> ~~es~~<br>~~ee~~<br>|-<br>~~es~~<br>~~es~~<br>|5.21<br>~~ns~~<br>~~ns~~<br>|-<br>~~ns~~<br>|**θ1°**<br>~~GO~~<br>|0°<br>~~GO~~<br>|10°<br>~~GO~~<br>|0°<br>|10°<br>|
|**E**<br>~~ee~~<br>~~ee~~|0.250<br>~~ee~~<br>~~GO~~<br>~~se~~|0.265<br>~~es~~<br>~~GO~~<br>~~se~~|6.35<br>~~ns~~<br>~~GO~~<br>~~re~~|6.73<br>~~ns~~<br>~~GO~~<br>~~re~~|**θ°**<br>~~GO~~<br>~~Gs~~|0°<br>~~GO~~<br>~~QO~~|15°<br>~~GO~~<br>~~QO~~|0°<br>~~GO~~|15°<br>~~GO~~|
|**E1**<br>~~ee~~<br>~~ee~~|0.170<br>~~ee ~~<br>~~GO~~<br>~~se~~|-<br> ~~es ~~<br>~~GO~~<br>~~se~~|4.32<br> ~~ns~~<br>~~GO~~<br>~~re~~|-<br>~~ns~~<br>~~GO~~<br>~~re~~|-<br>~~GO~~<br>~~Gs~~|-<br>~~GO~~<br>~~QO~~|-<br>~~GO~~<br>~~QO~~|-<br>~~GO~~|-<br>~~GO~~|



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**A Product Line of Diodes Incorporated DMN3024LK3** 

## **Suggested Pad Layout** 

**==> picture [185 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.2 3.0<br>0.244 0.118<br>PT<br>7 m ot<br>5.8<br>1.6 6.17<br>0.228<br>0.063 0.243<br>2.58 mm<br>inches<br>0.101<br>**----- End of picture text -----**<br>


## **IMPORTANT NOTICE** 

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Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

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## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A. Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2009, Diodes Incorporated 

## **www.diodes.com** 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMN3024LK3-13/power-mosfet-n-channel-30-v-144-a-0024-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn3024lk3-13/mosfet-n-ch-30v-14-4a-to-252/dp/3943582)
---

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