# Power MOSFET, N Channel, 30 V, 10.3 A, 8000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943578/)

**URL**: https://novapart.co/products/DMN3016LSS-13/power-mosfet-n-channel-30-v-103-a-8000-ohm-soic
**SKU**: DMN3016LSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1570
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10.3A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943578/)

ODES. 

**DMN3016LSS** id **30V N-CHANNEL ENHANCEMENT MODE MOSFET** 

**Product Summary Features and Benefits V(BR)DSS RDS(ON) max TAID = 25°C  max** •• Low On-Resistance Low Input Capacitance 12mΩ @ VGS = 10V 10.3 A • Fast Switching Speed 30V 16mΩ @ VGS = 4.5V 9.3 A • **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** • **Halogen and Antimony Free. “Green” Device (Note 3) Description** • **Qualified to AEC-Q101 standards for High Reliability** This MOSFET has been designed to minimize the on-state resistance **Mechanical Data** (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case: SO-8 • Case Material: Molded Plastic, "Green" Molding Compound **Applications** UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Backlighting • Terminal Connections Indicator: See diagram • Power Management Functions • Terminals: Finish  Matte Tin annealed over Copper leadframe. • DC-DC Converters Solderable per MIL-STD-202, Method 208 **e3** • Weight: 0.076 grams (approximate) ~~|~~ **D** SO-8 S D S D Pin1 **G** S co = D > G [||LT] **[** 1]1| D **S** Top View Top View Equivalent Circuit Pin Configuration 

## **Ordering Information** (Note 4) 

**Part Number Case Packaging** DMN3016LSS-13 SO-8 2500/Tape & Reel 

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**==> picture [233 x 113] intentionally omitted <==**

**----- Start of picture text -----**<br>
8 5 8 5<br>PT TET yy PTT TTT TL<br>N3016LS N3016LS<br>YY WW YY WW<br>1 4 1 4<br>_: _<br>Chengdu A/T Site Shanghai A/T Site<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking N3016LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) ~~i.~~ 

1 of 6 **www.diodes.com** 

DMN3016LSS Document number: DS36937 Rev.2 - 2 

July 2014 © Diodes Incorporated 

||||**DMN3016LSS**|**DMN3016LSS**|
|---|---|---|---|---|
|NEW PRODUCT<br>ADVANCE INFORMATION<br>NEW PRODUCT<br>**Maximum Ratings **(@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Drain-Source Voltage<br>VDSS<br>30<br>V<br>Gate-Source Voltage<br>VGSS<br>±20<br>V<br>Continuous Drain Current (Note 6) VGS= 10V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>10.3<br>8.3<br>A<br>t<10s<br>TA= +25°C<br>TA= +70°C<br>ID<br>13.4<br>10.6<br>A<br>Continuous Drain Current (Note 6) VGS= 4.5V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>9.3<br>7.3<br>A<br>t<10s<br>TA= +25°C<br>TA= +70°C<br>ID<br>12.0<br>9.5<br>A<br>Maximum Continuous BodyDiode Forward Current(Note 6)<br>IS<br>2.5<br>A<br>Pulsed Drain Current(10µspulse,dutycycle = 1%)<br>IDM<br>80<br>A<br>Avalanche Current(Note 7)L = 0.1mH<br>IAS<br>22<br>A<br>Avalanche Energy (Note 7)L = 0.1mH<br>EAS<br>25<br>mJ<br>**Thermal Characteristics** (@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>Total Power Dissipation(Note 5)<br>PD<br>1.5<br>W<br>Thermal Resistance, Junction to Ambient (Note 5)<br>SteadyState<br>RθJA<br>82<br>°C/W<br>t<10s<br>48<br>°C/W<br>Total Power Dissipation(Note 6)<br>PD<br>2.0<br>W<br>:~~— ee e~~~~**e** e~~<br>~~**ee**~~<br>~~ee~~<br>~~**e**ee~~<br>~~ae~~<br>~~ee~~<br>~~e~~|||||
||Thermal Resistance, Junction to Ambient (Note 6)||SteadyState<br>RθJA<br>60<br>t<10s<br>37|°C/W<br>°C/W|
||Thermal Resistance,Junction to Case||RθJC<br>6.4|°C/W|
||Operatingand Storage Temperature Range||TJ,TSTG<br>-55 to 150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|μA|VDS= 30V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 8) **|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1.3<br>~~ee~~|—<br>~~ee~~|2.5<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|8<br>~~ee~~|12<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 12A<br>~~ee~~|
|||—<br>~~ee~~|12<br>~~ee~~|16<br>~~ee~~||VGS= 4.5V,ID= 10A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.7<br>~~ee~~|1.0<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 1A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~———ee~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~ee~~|—<br>~~ee~~|1415<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~———~~|Coss<br>~~ee~~|—<br>~~ee~~|119<br>~~ee~~|—<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~ee~~|—<br>~~ee~~|82<br>~~ee~~|—<br>~~ee~~|||
|Gate resistance<br>~~———~~<br>~~——~~|Rg<br>~~ee~~|—<br>~~ee~~|2.6<br>~~ee~~|3.2<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~eee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~——— ~~<br>~~——~~|Qg<br> ~~ee~~|—<br>~~ee~~|11.3<br>~~ee~~|—<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~<br>~~ee~~|VDS= 15V, ID= 12A<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~——~~|Qg|—|25.1|—<br>~~e~~|||
|Gate-Source Charge<br>~~——~~|Qgs|—|3.5|—<br>~~e~~|||
|Gate-Drain Charge<br>~~——~~<br>~~————~~|Qgd|—|3.6|—<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~——~~<br>~~————~~|tD(on)|—|4.8|—<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDD= 15V, VGS= 10V,<br>RL= 1.25Ω, RG= 3Ω,<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~<br>~~————~~|tr|—|16.5|—<br>~~e~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~————~~|tD(off)|—|26.1|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tf|—|5.6|—<br>~~ee~~|||
|Reverse RecoveryTime<br>~~————~~<br>~~EE~~|Trr<br>~~EE~~|—<br>~~EE~~|8.5<br>~~EE~~|—<br>~~ee~~<br>~~EE~~|ns<br>~~ee~~<br>~~EE~~|IF= 12A, di/dt = 500A/µs<br>~~ee~~<br>~~EE~~|
|Reverse RecoveryCharge<br>~~EE~~|Qrr<br>~~EE~~|—<br>~~EE~~|7.0<br>~~EE~~|—<br>~~EE~~|nC<br>~~EE~~||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 0.1mH, starting TA = +25°C. 

   8. Short duration pulse test used to minimize self-heating effect. 

   9. Guaranteed by design. Not subject to product testing. 

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DMN3016LSS Document number: DS36937 Rev.2 - 2 

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**DMN3016LSS** 

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30 30<br>VGS = 10V VGS = 3.0V VDS = 5.0V<br>VGS = 4.5V<br>25 fe ee 25<br>VGS = 4.0V<br>VGS = 3.5V<br>20 20<br>fem<br>|<br>15 15<br>(aeeee e eees (en<br>10 10<br>TA = 150°C TA = 85°C<br>5 a V GS = 2.5V 5 TA = 125°C T a A = 25°C<br>VGS = 2.2V TA = -55°C<br>0 0 jp 0.5 1 1.5 2 0 0 fh 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.03 0.03<br>VGS = 4.5V<br>TET<br>0.025<br>TA = 150°C<br>0.02 0.02 |tet<br>TA = 125°C<br>TA = 85°C<br>0.015 or<br>VGS = 4.5V TA = 25°C<br>cee<br>0.01 0.01<br>VGS = 10V TA = -55°C<br>=<br>0 0.0050 CEE<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.8 0.024<br>1.6 Totty» V GS ID  4.5= 5A= V 0.02 »=606ft VGS = 4.5V<br>ID = 5A<br>1.4 Sanna 0.016 FEET 2<br>VGS  10= V<br>1.2 ID = 10A 0.012 V I GSD = 10A   10= V<br>1 Poh) 0.008 Ae<br>0.8 0.004<br>0.6 ALPE Ss 0 EEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I  I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>RDS(ON) RDS(ON)<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMN3016LSS** 

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3 30<br>2.5 25<br>2 | |] | | 20 |] yyy<br>ID = 1mA<br>1.5 | I D = 250µA <>[-—_ |-~ 15<br>TA = 25°C<br>=—_—<br>1 10<br>0.5 FETT yyoS: 5 |] iy]<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2<br>TJ, JUNCTION TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature Figure 8 Diode Forward Voltage vs. Current<br>10000 SSS 10000 —————————<br>TA = 150°C f = 1MHz<br>————— ————<br>1000 aoe a ee<br>C iss<br>———— T A  = 125°C _oSSeege<br>1000<br>———— eee eee<br>100<br>|__| _|_|__|__ —————<br>SSS T A  = 85°C SE<br>10 em———— 100 OSOO Coss<br>T A  = 25°C Crss<br>1 er, ————<br>——— es<br>ee | | | | ft ft ft te<br>0.1 ee 10 Pit | tet yy yy<br>0 10 20 30 0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Typical Drain-Source Leakage Current vs. Voltage Figure 10 Typical Junction Capacitance<br>10 100<br>RDS(on)<br>9 Limited<br>8<br>10<br>7 PP LA —<br>DC<br>6 V ID DS   12= = 15V A PW = 10s<br>5 1 PW = 1s<br>PW = 100ms<br>4 rs a P W = 10ms AONE<br>3 P W  = 1ms<br>2 TT oo 0.1 PTI TJ(max) = 150°C PW = 100µs PANS<br>TA = 25°C<br>1 V GS  = 10V<br>Single Pulse<br>0 f ] | | | ff 0.01 DUT on 1 * MRP Board eeta<br>0 5 10 15 20 25 0.1 1 10 100<br>Qg [, TOTAL GATE CHARGE ] (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)GS(th) IS<br>V<br>, DRAIN LEAKAGE CURRENT (µA) , JUNCTION CAPACITANCE (pF)T<br>IDSS C<br>, DRAIN CURRENT (A)<br>ID<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

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July 2014 

© Diodes Incorporated 

**DMN3016LSS** 

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1<br>S D = 0.9 S SS SSSSar<br>D = 0.7<br>D = 0.5<br>a<br>D = 0.3 A ec Te<br>UN TUITE ETAIIT<br>PUN A reece TUM AAI EU Ul<br>0.1<br>EERE D = 0.1 ore HH<br>ne ele a ll oTTT<br>D = 0.05<br>Ey PIO TTI TTT ETT<br>TT EO TT<br>esi D = 0.02<br>0.01 Ce<br>eee D = 0.01 ATM CAI IT IIT<br>Ey  2) | | | |<br>SE eA tt<br>D = 0.005<br>Ey PITTICPL R θJA (t) = r(t) * R θJA mua<br>ED ae RθJA = 82°C/W HH<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001 Pima CCT l<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [403 x 160] intentionally omitted <==**

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Mead SO-8<br>| a a | Dim  Min  Max<br>A  -  1.75<br>A1  0.10  0.20<br>E1 E A2  1.30  1.50<br>Gauge Plane A3  0.15  0.25<br>; A1 F 1 L L ry Seating Plane b  0.3  0.5<br>D  4.85  4.95<br>Toe eS Detail ‘A’ E  5.90  6.10<br>CLI LJ L_| ! h 45° 7°~9° E1 h e  3.- 851.27 Typ30..3595<br>Detail ‘A’ L  0.62  0.82<br>A2 A A3 θ  0° 8°<br>UPEE e b , , [ \— IS ) 8 All Dimensions in mm<br>D<br>0.254<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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X<br>**----- End of picture text -----**<br>


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C1<br>C2<br>Y + |<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>X  0.60<br>Y  1.55<br>C1  5.4<br>C2  1.27<br>**----- End of picture text -----**<br>


5 of 6 **www.diodes.com** 

DMN3016LSS Document number: DS36937 Rev.2 - 2 

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**DMN3016LSS IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: ; A.   Life support devices or systems are devices or systems which: | 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

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---

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