# Power MOSFET, N Channel, 30 V, 10 A, 8000 µohm, U-DFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3943576RL/)

**URL**: https://novapart.co/products/DMN3016LFDE-7/power-mosfet-n-channel-30-v-10-a-8000-ohm-u
**SKU**: DMN3016LFDE-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1040
**Stock**: 100+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 730mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | U-DFN2020 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943576RL/)

**DMN3016LFDE** id 

**N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|30V|12mΩ @ VGS= 10V|10A|
||16mΩ @ VGS= 4.5V|8.5A|



## **Features and Benefits** 

- 0.6mm Profile – Ideal for Low Profile Applications 

- PCB Footprint of 4mm[2] 

- Low Gate Threshold Voltage 

- Low On-Resistance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: U-DFN2020-6 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Battery Management Application 

- Power Management Functions 

- DC-DC Converters 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.0065 grams (Approximate) 

U-DFN2020-6 (Type E) 

Bottom View 

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## **Ordering Information** (Note 4) 

||||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN3016LFDE-7|U-DFN2020-6 (TypeE)|3,000/Tape &Reel|
|DMN3016LFDE-13|U-DFN2020-6(Type E)|10,000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 8 **www.diodes.com** 

DMN3016LFDE Document number: DS35900 Rev. 3 - 2 

February 2020 © Diodes Incorporated 

**DMN3016LFDE** 

## **Marking Information** 

Site 1 

NR = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) 

Date Code Key **Year 2012 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029** ~~es~~ **Code** Z … H ~~ee~~ I ~~ee~~ J ~~ee~~ K ~~ee~~ L ~~ee~~ M ~~ee~~ N ~~ee~~ O ~~ee~~ P R **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~es~~ **Code** 1 2 3 ~~ee~~ 4 5 ~~ee~~ 6 ~~ee~~ 7 ~~ee~~ 8 ~~ee~~ 9 ~~ee~~ O ~~oe~~ N D Site 2 

NR = Product Type Marking Code YWX = Date Code Marking **NR** Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) 

|Date CodeKey<br>**Year**<br>**2012**<br>**…**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**Code**<br>2<br>…<br>0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>**Week**<br>**1-26**<br>**27-52**<br>**53**<br>**Code**<br>A-Z<br>a-z<br>z<br>**Internal Code**<br>**Sun**<br>**Mon**<br>**Tue**<br>**Wed**<br>**Thu**<br>**Fri**<br>**Sat**<br>**Code**<br>T<br>U<br>V<br>W<br>X<br>Y<br>Z<br>~~es~~<br>~~ee ee ee ee ee ee ee ee~~<br>~~aee~~<br>~~ee~~|
|---|



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DMN3016LFDE Document number: DS35900 Rev. 3 - 2 

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**DMN3016LFDE** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|10<br>8|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|12<br>9|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|2.5|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|90|A|
|Avalanche Current(Note 7)L = 0.1mH|||IAS|22|A|
|Avalanche Energy (Note 7)L = 0.1mH|||EAS|24|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.73|W|
||TA= +70°C||0.47||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RJA|171|°C/W|
||t<10s||121||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.02|W|
||TA= +70°C||1.30||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RJA|62|°C/W|
||t<10s||42||
|Thermal Resistance,Junction to Case(Note 6)|SteadyState|RJC|9.3||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~esse~~|**Symbol**<br>~~esse~~|**Min**<br>~~esse~~|**Typ **<br>~~esse~~|**Max**<br>~~esse~~|**Unit**<br>~~esse~~|**Test Condition**<br>~~esse~~|
|**OFF CHARACTERISTICS(Note 8) **<br>~~esse~~|||||||
|Drain-Source Breakdown Voltage<br>~~esse~~|BVDSS<br>~~esse~~|30<br>~~esse~~|—<br>~~esse~~|—<br>~~esse~~|V<br>~~esse~~|VGS= 0V,ID= 250μA<br>~~esse~~|
|Zero Gate Voltage Drain Current<br>~~esse~~|IDSS<br>~~esse~~|—<br>~~esse~~|—<br>~~esse~~|1<br>~~esse~~|μA<br>~~esse~~|VDS= 30V,VGS= 0V<br>~~esse~~|
|Gate-Source Leakage<br>~~esse~~|IGSS<br>~~esse~~|—<br>~~esse~~|—<br>~~esse~~|±100<br>~~esse~~|nA<br>~~esse~~|VGS= ±20V,VDS= 0V<br>~~esse~~|
|**ON CHARACTERISTICS(Note 8) **|||||||
|Gate Threshold Voltage<br>~~SS~~|VGS(TH)<br>~~SS~~|1.4<br>~~SS~~|—<br>~~SS~~|2.0<br>~~SS~~|V<br>~~SS~~|VDS= VGS,ID= 250μA<br>~~SS~~|
|Static Drain-Source On-Resistance<br>~~SS~~|RDS(ON)<br>~~SS~~|—<br>~~SS~~|8<br>~~SS~~|12<br>~~SS~~|mΩ<br>~~SS~~|VGS= 10V,ID= 11A<br>~~SS~~|
|||—<br>~~SS~~|12<br>~~SS~~|16<br>~~SS~~||VGS= 4.5V,ID= 9A<br>~~SS~~|
|Forward Transfer Admittance||Yfs||—|32|—|S|VDS= 5V,ID= 12A|
|Diode Forward Voltage|VSD|—|0.70|1.0|V|VGS= 0V,IS= 1A|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~eeee~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|1415<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|119<br>~~ee~~|—<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|82<br>~~ee~~|—<br>~~ee~~|||
|Gate Resistance<br>~~ee~~<br>~~————~~|Rg<br>~~ee~~|—<br>~~ee~~|2.6<br>~~ee~~|3.2<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~ee ~~<br>~~————~~|Qg<br> ~~ee~~|—<br>~~ee~~|11.3<br>~~ee~~|—<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~<br>~~ee~~|VDS= 15V, ID= 12A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~————~~|Qg|—|25.1|—<br>~~e~~|||
|Gate-Source Charge<br>~~————~~|Qgs|—|3.5|—<br>~~e~~|||
|Gate-Drain Charge<br>~~————~~<br>~~————~~|Qgd|—|3.6|—<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~————~~<br>~~————~~|tD(ON)|—|4.8|—<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDD= 15V, VGS= 10V,<br>RL= 1.25Ω, RG= 3Ω<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR|—|16.5|—<br>~~ee~~|||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)|—|26.1|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tF|—|5.6|—<br>~~ee~~|||
|Reverse RecoveryTime<br>~~————~~<br>~~EE~~|tRR<br>~~EE~~|—<br>~~EE~~|12.3<br>~~EE~~|—<br>~~ee~~<br>~~EE~~|ns<br>~~ee~~<br>~~EE~~|IF= 12A, di/dt = 500A/μs<br>~~ee~~<br>~~EE~~|
|Reverse RecoveryCharge<br>~~EE~~|QRR<br>~~EE~~|—<br>~~EE~~|10.4<br>~~EE~~|—<br>~~EE~~|nC<br>~~EE~~||



7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C . 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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**DMN3016LFDE** 

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30 30<br>VGS = 10V<br>25 VGS = 4.5V 25 V DS = 5.0V<br>VGS = 4.0V<br>20 20<br>VGS = 3.5V<br>VGS = 3.0V<br>15 |_———— 15<br>10 10<br>| eee ine<br>TA = 150C<br>5 5 T A  = 125C TA = 85  C<br>VGS = 2.5V TA = 25C<br>0 yoo 0 ay TA = -55 ae C<br>0 0.5 1.0 1.5 2.0 0 1 2 3 4<br>VDS, DRAIN -SOURCE VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2  Typical Transfer Characteristics<br>0.04 0.04<br>VGS = 4.5V<br>IL<br>0.03 Sco) C 0.03 O L<br>0.02 |dewPl | ff 0.02 S| TA = 125  C T A  = 150C 7<br>“| | ||<br>TA = 85C<br>0.01 [| | | [| 0.01 = TA = 25C<br>TA = -55C<br>—— ===<br>0 ESCO 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>ID, DRAIN SOURCE CURRENT (A) ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>VGS  4= .5V<br>ey “TTTTTT ID  5= A<br>Ae VGS = 10V<br>ID  10= A<br>THO eet<br>TLLLLELE) -50 -25 0 25 50 75 100 125 150 0 “eee -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6  On-Resistance Variation with Temperature<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE<br>DS(ON)<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>D<br>, DRAIN CURRENT (A)<br>I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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30<br>25<br>20<br>15<br>10 Ee<br>tt | ey<br>5<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)SD, SOURCE-DRAIN VOLTAGE (V), SOURCE-DRAIN VOLTAGE (V)<br>Fig. 8 Diode Forward Voltage vs. Current<br>, SOURCE CURRENT (A)<br>ISS<br>**----- End of picture text -----**<br>


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25<br>20<br>15<br>S e 10 Ee<br>e tt | ey<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>T AA , AMBIENT T EE M PP ERA TURE (TURE (°C) 癈 ) VSD, SOURCE-DRAIN VOLTAGE (V)SD, SOURCE-DRAIN VOLTAGE (V), SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>2,0001,800 TT f = 1MHz 109 a<br>1,600 8 f = 1MHz<br>CEFR ae<br>1,400 NEE|= 7 PrOf<br>1,200 SS Ciss 6 Are<br>1,000 ee 5 foe<br>800 a 4 nA<br>600 It 3 aoe<br>400 2<br>(Oo TOE<br>200 C oss 1<br>Nee (Ar<br>0 Crss 0<br>0 —_—__ 5 10 15 20 25 30 0 a 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Fig. 9 Typical Junction Capacitance Fig. 10 Gate-Charge Characteristics<br>100 TAN i<br>90 Single Pulse<br>RJA = 61C/W<br>80 m0) AN R JA(t)  = r (t)  * R JA l<br>TJ - TA = P * RJA(t)<br>70 00) AN l<br>60 00 00 0 0<br>50 Bi S00 0 0<br>40 001 0 0 0<br>30 001 AN 000<br>20<br>001 00 0<br>10 00 0 00 0<br>0 Oi AN ae<br>0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 11 Single Pulse Maximum Power Dissipation<br>, GATE-SOURCE VOLTAGE (V)<br>V<br>GS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, GATE THRESHOLD VOLTAGE(V)<br>V<br>GS(TH)<br>, PEAK TRANSIENT POIWER (W)<br>(PK)<br>P<br>, SOURCE CURRENT (A)<br>ISS<br>**----- End of picture text -----**<br>


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1 eo ec<br>eer D = 0.7<br>D = 0.5<br>bee erat<br>TN eee HK HH<br>D = 0.3<br>FHT gp<br>a<br>eT HTT HT<br>0.1 ni A A7A D = 0.9<br>BEERa D = 0.1 HRHH<br>Jlll= n/c<br>D = 0.05 TTT<br>bo [CI] TT<br>HU A tea<br>rr eh<br>I Pe D = 0.02 Ee mE | | TIL IE EYE<br>0.01<br>BEER D = 0.01 EE<br>Eee D = 0.005 RRθJA JA (t) = r(t) * R(t)=r(t) * R JA θJA<br>ee a ees eae ee ee RRθJA  JA = =6161癈℃/W/W  man<br>a a DuDu ty Cyc le, D=t1/ t2le, D = t1 / t2  HI<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>t1, PULSE DURATION TIME (sec)<br>Fig. 12 Transient Thermal Resistance<br>Fig. 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN3016LFDE** 

## **Package Outline Dimension** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type E)** 

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A3<br>A1<br>A<br>D<br>—<br>b1 K1<br>D2<br>E E2 L 1<br>L(2X)<br>K2<br>Z(4X) e b(6X)<br>ce<br>**----- End of picture text -----**<br>


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U-DFN2020-6<br>Type E<br>Dim  Min  Max  Typ<br>A  0.57  0.63 0.60<br>A1  0 0.05 0.03<br>A3    0.15<br>b 0.25 0.35 0.30<br>=———<br>b1  0.185 0.285 0.235<br>D  1.95 2.05 2.00<br>D2  0.85 1.05 0.95<br>E  1.95 2.05 2.00<br>E2  1.40 1.60 1.50<br> e    0.65<br>L  0.25 0.35 0.30<br>L1  0.82  0.92  0.87<br>K1    0.305<br>K2    0.225<br>——— Z    0.20<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type E)** 

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X2<br>Y3 Y2 Y1<br>X1<br>X(6x) Salat C Y (2x)<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**X**|0.400|
|**X1**|0.285|
|**X2**|1.050|
|**Y**|0.500|
|**Y1**|0.920|
|**Y2**|1.600|
|**Y3**|2.300|



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DMN3016LFDE Document number: DS35900 Rev. 3 - 2 

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**DMN3016LFDE** 

## **IMPORTANT NOTICE** 

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMN3016LFDE Document number: DS35900 Rev. 3 - 2 

February 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN3016LFDE-7/power-mosfet-n-channel-30-v-10-a-8000-ohm-u)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn3016lfde-7/mosfet-n-ch-30v-10a-u-dfn2020/dp/3943576RL)
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