# Power MOSFET, N Channel, 30 V, 62 A, 3900 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3943570/)

**URL**: https://novapart.co/products/DMN3008SFG-7/power-mosfet-n-channel-30-v-62-a-3900-ohm-powerdi
**SKU**: DMN3008SFG-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2240
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 900mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 62A |
| Drain Source On State Resistance | 3900µohm |
| Gate Source Threshold Voltage Max | 2.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943570/)

## **DMN3008SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|30V|4.4mΩ @ VGS= 10V|62A|
||5.5mΩ@VGS= 4.5V|56A|



## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Applications** 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

## **Features and Benefits** 

- Low RDS(ON) – Ensures On-State Losses are Minimized 

- Small, Form Factor Thermally Efficient Package Enables Higher Density End Products 

- Occupies only 33% of the Board Area Occupied by SO-8 Enabling Smaller End Products 

- 100% Unclamped Inductive Switch (UIS) Test in Production 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: PowerDI[®] 3333-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.072 grams (Approximate) 

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## **Ordering Information** (Note 4) 

|**Part Number**|**Case**|**Packaging**|
|---|---|---|
|DMN3008SFG-7|PowerDI3333-8|2,000/Tape & Reel|
|DMN3008SFG-13|PowerDI3333-8|3,000/Tape & Reel|



Notes: 

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

PowerDI3333-8 

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N08<br>YYWW<br>**----- End of picture text -----**<br>


N08= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ DMN3008SFG Document number: DS36748 Rev.  7 - 2 

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**DMN3008SFG** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|17.6<br>14.1|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|23.0<br>18.4|A|
||Steady<br>State|TC= +25°C<br>TC= +70°C|ID|62<br>50|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|150|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|2|A|
|Avalanche Current,L = 0.1mH|||IAS|45|A|
|Avalanche Energy,L = 0.1mH|||EAS|101|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.9|W|
||TA= +70°C||0.6||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|134|°C/W|
||t< 10s||79|°C/W|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.1|W|
||TA= +70°C||1.3||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|58|°C/W|
||t < 10s||34|°C/W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|4.8|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 7)|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current|IDSS|—|—|10|μA|VDS= 30V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 7)<br>~~eS~~|||||||
|Gate Threshold Voltage<br>~~OF~~|VGS(TH)<br>~~OF~~|1<br>~~OF~~<br>~~eS~~|—<br>~~OF~~<br>~~eS~~|2.3<br>~~OF~~<br>~~eS~~|V<br>~~OF~~<br>~~eS~~|VDS= VGS,ID= 250μA<br>~~OF~~|
|Static Drain-Source On-Resistance<br>~~OF~~|RDS(ON)<br>~~OF~~|—<br>~~OF~~<br>~~eS~~|3.9<br>~~OF~~<br>~~eS~~|4.4<br>~~OF~~<br>~~eS~~|mΩ<br>~~OF~~<br>~~eS~~<br>~~QO~~|VGS= 10V,ID= 13.5A<br>~~OF~~|
|||—<br>~~OF~~<br>~~eS~~|4.6<br>~~OF~~<br>~~eS~~|5.5<br>~~OF~~<br>~~eS~~<br>~~QO~~||VGS= 4.5V,ID= 13.5A<br>~~OF~~<br>~~(~~|
|Diode Forward Voltage<br>~~GG~~|VSD<br>~~GG~~|—<br>~~eS~~<br>~~GG~~|0.75<br>~~eS~~<br>~~GG~~|1.2<br>~~eS~~<br>~~GG~~<br>~~QO~~|V<br>~~eS~~<br>~~GG~~<br>~~QO~~|VGS= 0V,IS= 1A<br>~~GG~~<br>~~(~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~QO (~~|||||||
|Input Capacitance<br>~~ne~~|Ciss<br>~~ne~~|—<br>~~ne~~|3,690<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~|VDS= 10V, VGS= 0V,<br>f = 1MHz<br>~~ne~~|
|Output Capacitance<br>~~ne~~|Coss<br>~~ne~~|—<br>~~ne~~|530<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|Reverse Transfer Capacitance<br>~~ne~~|Crss<br>~~ne~~|—<br>~~ne~~|459<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|Gate Resistance|Rg|—|0.9|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= 4.5V)|Qg|—|41|—|nC|VDS= 24V, ID= 27A|
|Total Gate Charge(VGS= 10V)|Qg|—|86|—|nC||
|Gate-Source Charge|Qgs|—|9.2|—|nC||
|Gate-Drain Charge|Qgd|—|18.6|—|nC||
|Turn-On DelayTime|tD(ON)|—|5.7|—|ns|VDD= 15V, VGS= 10V,<br>RL= 1.11Ω, Rg= 4.7Ω,<br>ID= 13.5A<br>~~errr~~|
|Turn-On Rise Time|tR|—|14.0|—|ns||
|Turn-Off DelayTime|tD(OFF)|—|63.7|—|ns||
|Turn-Off Fall Time<br>~~errr~~|tF<br>~~errr~~|—<br>~~errr~~|28.4<br>~~errr~~|—<br>~~errr~~|ns<br>~~errr~~||
|Reverse RecoveryTime<br>~~errr~~|tRR<br>~~errr~~|—<br>~~errr~~|19.3<br>~~errr~~|—<br>~~errr~~|ns<br>~~errr~~|IF=13.5A, di/dt=100A/μs<br>~~errr~~|
|Reverse RecoveryCharge<br>~~errr~~|QRR<br>~~errr~~|—<br>~~errr~~|10.7<br>~~errr~~|—<br>~~errr~~|nC<br>~~errr~~||



Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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30.0 30<br>28.0 V GS = 10V V      = 5.0VDS<br>26.0 7 >a VGS = 4.5V eee) ioe<br>25<br>24.0<br>22.0 V GS = 4.0V<br>[A)]<br>20.0 V GS = 3.0V T [(] 20<br>18.0 V GS = 2.5V [N] RE T   = 150°CA<br>fe R Seen nen<br>16.0 a U i T   = 125°CA ff<br>C 15<br>14.0<br>12.0 [IN] A T   = 85°CA<br>R<br>10.0 ee D 10 7 Ke T   = 25°CA<br>8.0 I [,] D T   = -55°CA<br>6.0 f V GS = 2.0V o 5<br>4.0<br>2.0 VGS = 1.8V<br>0.0 —— 0 Sap nun<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) V     , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.006 0.03<br>0.0055 TOIL<br>0.025<br>0.005<br>VGS = 4.5V<br>EeCCHEEEEPCH 0.02 EeeCEC<br>0.0045 SRS00nsenneeees<br>0.004 0.015<br>VT ALLELE<br>VGS = 10V<br>0.0035 ID = 13.5A<br>0.003 eerEEL 0.01 PyEp yy<br>ELEELLE 0.005 MTT TTT TT<br>0.0025 CCCP at}<br>0.002 CEEEEEEEEEEEE 0 (LPP<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) Figure 4 Typical Transfer CharacteristicVGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.<br>Drain Current and Gate Voltage<br>) 0.01 V     = 4.5VGS 1.8<br>(<br>E 0.009<br>C<br>N pf fff 1.6 {ti<br>T [A] 0.008 T   = 150°CA<br>I [S] S 0.007 VGS  4.5= V<br>E T   = 125°CA 1.4 I D = 13.5A<br>- [R] see T EL<br>0.006<br>O [N] T   = 85°CA<br>E<br>C 0.005 1.2<br>R SS T   = 25°CA VGS  10= V<br>O [U] 0.004 ID = 13.5A<br>- [S] or 1 Z<br>0.003 T   = -55°CA<br>I [N] A<br>R<br>D 0.002<br>0.8<br>, )<br>0.001 ee ee<br>( [ON] S<br>D<br>R<br>0 ee 0.6 LiL LLL<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>I   , DRAIN CURRENT (A)D TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs. Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br> I , DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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0.01 “TTT 1.8<br>0.009<br>1.6<br>0.008<br>1.4<br>0.007 SEPP V GS = 4.5V eee<br>ID = 13.5A 1.2<br>0.006 CEA ee OSS<br>ID = 1mA<br>0.005 1<br>0.004 eT VIDGS= 13.5A  10= V 0.8 OS ID=250ID = 250A  礎<br>0.003 ee NR<br>0.6<br>PT tT [TUNA]<br>0.002<br>0.001 OD 0.4<br>0 EEE 0.2 tt<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 tt 50 75 yt 100 yt 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation<br>vs. Ambient TemperatureJunction Temperature<br>30 100000<br>)A T   = 150°CA<br>) 25 eee ee [n] (TNE 10000 =——— T   = 125°CA<br>R<br>N [T(A] 20 eee eee RU 1000 ———<br>T   = 150°CA C T   = 85°CA<br>G [E]<br>C [URRE] 15 T   = 125°CA AK 100<br>A<br>E<br>T   = 85°CA L<br>O [URCE] 10 TT 10 ===25=<br>S ee ee T   = 25°CA I [N] AR ————— T   = 25°CA<br>I [,] S 5 T   = -55°CA D, 1<br>YP D [SS] ———<br>I<br>0 WS 0.1 ———<br>0 0.2 0.4 0.6 0.8 1 1.2 0 5 10 15 20 25 30<br>Figure 9 Diode Forward Voltage vs. CurrentV    , SOURCE-DRAIN VOLTAGE (V)SD V     , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 10 Typical Drain-Source Leakage Current<br>10 vs. Voltage<br>8<br>EAT VDS = 24V<br>ID  27= A<br>6 Pa<br>4<br>OAT<br>2 Peet<br>0 JIE<br>0 10 20 30 40 50 60 70 80 90 100<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 11 Gate Charge<br>AGE (V)<br>  A<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN LEAKAGE CURRENT (nA)<br>IDSS<br>, GATE SOURCE VOLTAGE (V)<br>GS<br>V<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>GS<br>AGE (V)<br>TE THRESHOLD VOLT<br>A<br>G<br>GS(th) ,<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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10000 a OG OO (<br>a a O<br>oo f = 1MHz<br>Ciss<br>, | | | |<br>1000 PONaIN a<br>ESS<br>Coss<br>——————_=—_ C rss<br>ee<br>100<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 Typical Junction Capacitance<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>**----- End of picture text -----**<br>


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1000 ee RDS(ON)  es[ttce es ee es ee a<br>Limited PW =10ms<br>Pret oH<br>PW =1ms<br>100<br>PW =100µs<br>a,ee Se Se NON2 Sl) a Ae<br>10 Sin WINNT<br>PTZ ENNIS’ ~ NEE<br>1 PW =100ms I ~JS~ NN<br>PW =1s<br>TJ(Max) = 150 ℃<br>0.1 TSingle PulseC = 25 ℃ SSA PW<br>SR) oe<br>DUT on 1*MRP Board Pot Ty DC Pot ttt<br>VGS= 10V TET Saal<br>0.01<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 13. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>a |<br>D = 0.7<br>D = 0.5<br>TT Se<br>D = 0.3 a ac coe<br>PTT TTT ETT NeerTPT<br>0.1 PTESe D = 0.1 ANEU ATla D = 0.9 |TE AIT<br>er<br>D = 0.05<br>a a<br>a FA<br>D = 0.02<br>TAA THU UI THM<br>0.01<br>eeCe D = 0.01 eeeeZO<br>a se cit aET<br>D = 0.005<br>FA R JA (t) = r(t) * R JA HTT<br>a | R JA = 136136 癈 °C/W /W nat<br>Single Pulse Duty Cycle, D = t1/ t2<br>0.001 Cull Coo CCE i<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 14  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**DMN3008SFG** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI3333-8** 

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A1 A3<br>A<br>PowerDI3333-8<br>Seating Plane<br>Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>Tora == A1  0.00 0.05 0.02<br>D<br>L(4x) A3   0.203<br>D2 b  0.27  0.37  0.32<br>1 b2  0.15 0.25 0.20<br>D  3.25 3.35 3.30<br>Pin #1 ID D2  2.22  2.32  2.27<br>b2(4x) E4 E  3.25 3.35 3.30<br>E2  1.56 1.66 1.61<br>E3  0.79 0.89 0.84<br>E<br>E4  1.60 1.70 1.65<br>E2 E3 e   0.65<br>L  0.35 0.45 0.40<br>L1    0.39<br>L1(3x) z    0.515<br>8 All Dimensions in mm<br>z(4x) b<br>e<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI3333-8<br>X3<br>X2<br>8<br>Y4<br>Y1 X1<br>Y2<br>Y3<br>fe<br>Y<br>1<br>X non C |<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C 0.650<br>X  0.420<br>X1  0.420<br>X2  0.230<br>X3  2.370<br>Y  0.700<br>Y1  1.850<br>Y2  2.250<br>Y3  3.700<br>Y4  0.540<br>**----- End of picture text -----**<br>


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DMN3008SFG Document number: DS36748 Rev.  7 - 2 

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**DMN3008SFG** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMN3008SFG Document number: DS36748 Rev.  7 - 2 

June 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN3008SFG-7/power-mosfet-n-channel-30-v-62-a-3900-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn3008sfg-7/mosfet-n-ch-30v-62a-powerdi-3333/dp/3943570)
---

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