# Power MOSFET, N Channel, 20 V, 240 mA, 1.8 ohm, X2-DFN1006, Surface Mount

![Product image](https://novapart.co/image/farnell:3943567/)

**URL**: https://novapart.co/products/DMN26D0UFB4-7/power-mosfet-n-channel-20-v-240-ma-18-ohm-x2
**SKU**: DMN26D0UFB4-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0420
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X2-DFN1006 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 240mA |
| Drain Source On State Resistance | 1.8ohm |
| Gate Source Threshold Voltage Max | 900mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943567/)

**DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(on)**|**ID**<br>**TA = +25°C**|
|20V|3.0Ω @ VGS= 4.5V|240mA|
||6.0Ω @ VGS= 1.8V|180mA|



## **Features and Benefits** 

- N-Channel MOSFET 

- Low On-Resistance 

- Very Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- Ultra-Small Surface Mount Package, 0.4mm Maximum Package Height 

- ESD Protected Gate 

## **Description** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

   - 

   - **https://www.diodes.com/products/automotive/automotive products/.** 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: X2-DFN1006-3 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

- Weight: 0.001 grams (Approximate) 

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X2-DFN1006-3<br>**----- End of picture text -----**<br>


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ESD PROTECTED Bottom View<br>**----- End of picture text -----**<br>


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Drain<br>Body<br>Diode<br>Gate<br>   Gate<br>   Protection Source<br>   Diode<br>Top View<br>Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN26D0UFB4-7|X2-DFN1006-3|3,000/Tape & Reel|
|DMN26D0UFB4-7B|X2-DFN1006-3|10,000/Tape &Reel|



Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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## **Marking Information** 

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M1  From date code 1527 (YYWW),  M1<br>this changes to:<br>Top View  Top View<br>Dot Denotes Drain Side  Bar Denotes Gate and Source Side<br>DMN26D0UFB4-7<br>M1<br>Top View<br>Bar Denotes Gate and Source Side<br>M1  = Part Marking Code<br>DMN26D0UFB4-7B<br>oo ee eo<br>M1  M1  M1<br>M1  M1  M1<br>M1  M1  M1<br>**----- End of picture text -----**<br>


## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

**Characteristic Symbol Value Unit** ~~a~~ Drain Source Voltage VDSS 20 V ~~a~~ Gate-Source Voltage ~~G~~ VGSS 10 V Steady TA = +25°C 240 Continuous Drain Current (Note 5) VGS = 4.5V ID mA ~~OO~~ State TA = +70°C 190 Steady TA = +25°C 180 Continuous Drain Current (Note 5) VGS = 1.8V ID mA ~~a~~ State TA = +70°C 140 ~~a~~ Pulsed Drain Current - tP = 10µs IDM 805 mA 

**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)@TA= +25°C|PD|350|mW|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|357|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



Note:        5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|I|Characteristic|Symbol|Min|(OD|Typ|Max|I|Unit|Test Condition|
|OFF CHARACTERISTICS (Note 6)|
|Drain-Source Breakdown Voltage|BVDSS|20|||V|VGS = 0V, ID = 100µA|
|ee|Zero Gate Voltage Drain Current @ TC = +25°C|IDSS|||500|nA|VDS = 20V, VGS = 0V|
|rit|Gate-Body Leakage|IGSS|||100 1|µA nA|VVGSGS = ±10V, V = ±5V, VDSDS = 0V  = 0V|
|ON CHARACTERISTICS (Note 6)|
|aD|Gate Threshold Voltage|V|I|GS(TH)|0.6|nD OD||ID|0.9|I|V|VDS = VGS, ID = 250µA|
||1.8|3.0|VGS = 4.5V, ID = 100mA|
||2.5|4.0|VGS = 2.5V, ID = 50mA|
|Static Drain-Source On-Resistance|RDS(ON)||3.4|6.0|Ω|VGS = 1.8V, ID = 20mA|
||4.7|10.0|VGS = 1.5V, ID = 10mA|
|Forward Transconductance||Yfs||180|242||mS|VDS = 10V, ID = 0.1A|
|Source-Drain Diode Forward Voltage|VSD|0.5||1.4|V|VGS = 0V, IS = 115mA|
|Ce|DYNAMIC CHARACTERISTICS (Note 7)|
|nN|Input Capacitance|Ciss||14.1|28.2|pF|
|Output Capacitance|Coss||2.9|5.8|pF|VDS = 15V, VGS = 0V|
|f = 1.0MHz|
|se|Reverse Transfer Capacitance|Crss||1.6|3.2|pF|
|SWITCHING CHARACTERISTICS|(Note 7)|
|Pe|Turn-On Delay Time|tD(ON)||3.8||
|Rise Time|tR||7.9||VGS = 4.5V, VDD = 10V|
|ns|
|Turn-Off Delay Time|tD(OFF)||13.4||ID = 200mA, RG = 2.0Ω|
|Fall Time|tF||15.2||
|————|ee|
|Notes:|6.|Short duration pulse test used to minimize self-heating effect.|
|7. Guaranteed by design. Not subject to product testing.|
|0.8|0.4|
|0.7|V|GS|= 8V|[fo|VGS = 4.5V|||V     = 10VDS|
|0.6|A|0.3|T   = -55°CA|
|0.5|ff|VGS = 3.0V|T   = 25°CA|T   = 85°CA|
|T   = 125°CA|
|0.4|fff|VGS = 2.5V|0.2|T   = 150°CA|
|0.3|We|
|VGS = 2.0V|
|0.2|0.1|
|Mn...|
|0.1|a|VGS = 1.5V|
|0|Ze|0|ft|
|0|0.5|1|1.5|2|2.5|3|0|0.5|1|1.5|2|2.5|3|
|VDS, DRAIN-SOURCE VOLTAGE (V)|V    , GATE-SOURCE VOLTAGE (V)GS|
|Fig. 1 Typical Output Characteristic|Fig. 2  Typical Transfer Characteristic|

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Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 

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5 4<br>COMI V     = 4.5VGS<br>4<br>3<br>T   = 150°CA<br>3 2 T   = 125°CA<br>VGS = 1.8V T   = 85°CA<br>af S SE<br>T   = 25°CA<br>2 1<br>VGS = 2.5V T   = -55°CA<br>PE l l<br>VGS = 4.5V<br>1 0<br>0.01 0.1 1 0.01 0.1 1<br>ID, DRAIN-SOURCE CURRENT (A)Fig. 3  Typical On-Resistance  I  , DRAIN CURRENT (A)D<br>Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage<br>vs. Drain Current and Temperature<br>2.0 4.0<br>1.8 COCCI PPE.<br>3.5<br>1.6 I V DGS = 500mA  = 4.5V 3.0<br>1.4<br>Sunmee VGS = 2.5V 2.5 4eeueeeece<br>1.2 I D  = 150mA VGS = 2.5V<br>2.0 ID = 150mA<br>1.0 ee 5-4e an<br>1.5<br>0.8<br>VGS = 4.5V<br>0.6 PEE 1.0 I D  = 500mA<br>0.4 CERECEES 0.5 SPEER<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE  ( o癈C)) TA, AMBIENT TEMPERATURE (( [o] 癈C))<br>Fig. 5 On-Resistance Variation with Temperature<br>Fig. 6 On-Resistance Variation with Temperature<br>1.41.2 0.80.7 CCCCCUIEE<br>0.6<br>1.0 -<br>0.5 T   = 25°CA<br>0.8 I   = 1mAD<br>tiCL ECt<br>0.4<br>0.6 I   = 250µAD<br>0.3 CCOECE<br>0.4<br>0.2 fo<br>0.2<br>0.1 Jo<br>0 —~ 0 TERTALEE<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>T  , AMBIENT TEMPERATURE (°C)A V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>DSON<br>**----- End of picture text -----**<br>


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20 10,000 _<br>f = 1MHz ee<br>1,000 | ft et<br>15 T   = 150°CA<br>SF a——————<br>Ciss TT<br>100 p T   = 125°CA p<br>—— eee<br>10 a a ere<br>10 T   = 85°CA<br>Kt———————————— L L<br>[><br>5<br>1 T   = 25°CA<br>Coss<br>Crss T   = -55°CA<br>0 0.1<br>0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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1 SSore D = 0.7 SSS SSS<br>HEHE D = 0.5 arr i}<br>D = 0.3 ST<br>PAU EINE eee, ETE ETE ETT EEE ETT<br>0.1 UIam)A UNE UTIETE ITEEECITEU<br>ER D = 0.1<br>Sesion ey Anema ac eet meen ete<br>D = 0.05 D = 0.9<br>aeeggg tm 7<br>He |<br>TAMU D = 0.02 y  TMT R RJAJA (t) = r(t) *   = 278278癈 [o] C/W R /WJA mail<br>0.01 ele Hill<br>a D = 0.01 Pc eet<br>P(pk)<br>=e See TT t1 || | CSS<br>D = 0.005<br>BfLY [vit] fT TTT TTa eetI eeTP TJ - TA = P * Rt 2 JA(t) TTLTTTHT<br>D = Single Pulse Duty Cycle, D = t1/t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **X2-DFN1006-3** 

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X2-DFN1006-3<br>Dim  Min  Max Typ<br>A   0.40  <br>A A1  0.00 0.05 0.03<br>b  0.10 0.20 0.15<br>b2  0.45 0.55 0.50<br>Seating Plane D  0.95 1.05 1.00<br>}lee S55e E  0.55 0.65 0.60<br>A 1 e    0.35<br>Po D = L1  0.20 0.30 0.25<br>Pin #1 ID L2  0.20 0.30 0.25<br>b (2x) k    0.40<br>=; === z  0.02  0.08 0.05<br>All Dimensions in mm<br>E b2 e<br>| J}<br>L2 k z<br>IL L1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X2-DFN1006-3** 

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X2<br>G1<br>G2<br>See<br>Y1 C<br>os<br>X X Y<br>X1<br>th ==<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C  0.350<br>G1  0.150<br>G2  0.075<br>X  0.450<br>X1  0.600<br>X2  1.200<br>Y  0.200<br>Y1  0.550<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMN26D0UFB4-7/power-mosfet-n-channel-20-v-240-ma-18-ohm-x2)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn26d0ufb4-7/mosfet-n-ch-20v-0-24a-x2-dfn1006/dp/3943567)
---

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