# Dual MOSFET, N Channel, 20 V, 20 V, 1.33 A, 1.33 A, 0.48 ohm

![Product image](https://novapart.co/image/farnell:2543515/)

**URL**: https://novapart.co/products/DMN2400UV-7/dual-mosfet-n-channel-20-v-133-a-048-ohm
**SKU**: DMN2400UV-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.0900
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.33A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Transistor Case Style | SOT-563 |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 530mW |
| Power Dissipation P Channel | 530mW |
| Drain Source Voltage Vds N Channel | 20V |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | 1.33A |
| Continuous Drain Current Id P Channel | 1.33A |
| Drain Source On State Resistance N Channel | 0.48ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2543515/)

**DMN2400UV** 

**DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|20V|0.48Ω@VGS= 5V|1.33A|
||0.7Ω@VGS= 2.5V|1.2A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected Gate** 

## **Description** 

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Power Management Functions 

- Battery Operated Systems and Solid-State Relays 

- Load Switch 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

- **https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: SOT563 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 O **e3** 

- Weight: 0.003 grams (Approximate) 

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## **Ordering Information** (Note 4) 

||||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN2400UV-7|SOT563|3,000/Tape & Reel|
|DMN2400UV-13|SOT563|10,000/Tape &Reel|



Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

||||||||||||||||||||||||24N and NAB = Marking Code|24N and NAB = Marking Code|24N and NAB = Marking Code|24N and NAB = Marking Code|24N and NAB = Marking Code|24N and NAB = Marking Code|24N and NAB = Marking Code|24N and NAB = Marking Code|24N and NAB = Marking Code||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||**24N**||||**YM**|||||||**NAB**|||||**YM**|||||YM = Date Code Marking<br>Y = Year (ex: G = 2019)||||||||||||||||
||||||||||||||||||||||||M = Month (ex: 9 = September)|||M = Month (ex: 9 = September)|M = Month (ex: 9 = September)|||||M = Month (ex: 9 = September)|||||||
|Date CodeKey|||||||||||||||||||||||||||||||||||||||
|**Year**||||**2009**||||||||**~**||||||||**2019**||||||**2020**|||||**2021**|||**2022**|||**2023**||
|**Code**||||W||||||||**~**|||||||||**G**|||||**H**|||||**I**|||**J**||||**K**|
||||||||||||||||||||||||||||||||||||||||
|**Month**||**Jan**||||**Feb**|||||**Mar**||||**Apr**||||||**May**||||**Jun**|||**Jul**|||**Aug**|**Sep**||**Oct**||**Nov**||**Dec**|
|**Code**|||1|1|||2|2|||3|||||4||4||||5||||6||7|||8|9||O||N||D|
|DMN2400UV|||||||||||||||||||||||1 of 7|1 of 7||1 of 7|||||||||||October 2019|October 2019|



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**DMN2400UV** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 5)|Steady<br>State|TA= +25C<br>TA= +85C|ID|1.33<br>0.84|A|
|Pulsed Drain Current|||IDM|3|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|530|mW|
|Thermal Resistance, Junction to Ambient|RJA|233.8|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~——~~|**Symbol**<br>~~——~~|**Min**<br>~~——~~|**Typ **<br>~~——~~|**Max**<br>~~——~~|**Unit**<br>~~——~~|**Test Condition**<br>~~——~~|
|**OFF CHARACTERISTICS(Note 6) **<br>~~——~~|||||||
|Drain-Source Breakdown Voltage<br>~~——~~<br>~~a~~|BVDSS<br>~~——~~|20<br>~~——~~|—<br>~~——~~|—<br>~~——~~|V<br>~~——~~|VGS= 0V,ID= 250μA<br>~~——~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~——~~<br>~~a~~|IDSS<br>~~——~~|—<br>~~——~~|—<br>~~——~~|100<br>~~——~~|nA<br>~~——~~|VDS= 20V,VGS= 0V<br>~~——~~|
|Gate-Source Leakage<br>~~a~~|IGSS|—|—|±1.0|A|VGS= ±4.5V,VDS= 0V|
|||—|—|±50||VGS= ±10V,VDS= 0V|
|**ON CHARACTERISTICS(Note 6) **<br>~~a~~|||||||
|Gate Threshold Voltage|VGS(TH)|0.5|—|0.9|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance|RDS(ON)|—|0.3|0.48|Ω|VGS= 5.0V,ID= 200mA|
|||—|0.35|0.5||VGS= 4.5V,ID= 600mA|
|||—|0.45|0.7||VGS= 2.5V,ID= 500mA|
|||—|0.55|0.9||VGS= 1.8V,ID= 350mA|
|||—|0.65|1.5||VGS= 1.5V,ID= 50mA|
|Forward Transfer Admittance||Yfs||—|1.4|—|S|VDS= 10V,ID= 400mA|
|Diode Forward Voltage (Note 6)<br>~~EEE~~|VSD<br>~~EEE~~|—<br>~~EEE~~|0.7<br>~~EEE~~|1.2<br>~~EEE~~|V<br>~~EEE~~|VGS= 0V, IS= 150mA,<br>f = 1.0MHz<br>~~EEE~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|—<br>~~———~~|36.0<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS=16V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|—<br>~~———~~|5.7<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|—<br>~~———~~|4.2<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~|—<br>~~———~~|68<br>~~———~~|—<br>~~———~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V<br>~~———~~|
|Total Gate Charge|Qg|—|0.5|—|nC|VGS=4.5V, VDS= 10V,<br>ID=250mA<br>~~ee~~|
|Gate-Source Charge|Qgs|—|0.07|—|nC||
|Gate-Drain Charge<br>~~——~~|Qgd|—|0.1|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~——~~|tD(ON)|—|4.06|—<br>~~ee~~|ns<br>~~ee~~|VDD= 10V, VGS= 4.5V,<br>RL= 47Ω, RG= 10Ω,<br>ID= 200mA<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~|tR|—|7.28|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~——~~|tD(OFF)|—|13.74|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~——~~|tF|—|10.54|—<br>~~ee~~|ns<br>~~ee~~||



Notes: 5. Device soldered onto FR-4 PCB, minimum recommended soldering pad dimensions (25.4mm x 25.4mm x1.6mm, 2oz Cu pad: 0.18mm[2] x 6). 6. Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to product testing. 

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2.0 1.5<br>VGS = 4.5V<br>VGS = 2.5V V     = 5VDS<br>OIL<br>1.5 V GS  = 2.0V<br>[A)] (T 1.0<br>[N] E<br>R<br>VGS = 1.8V RU<br>1.0 C<br>[IN] A<br>R<br>D 0.5<br>0.5 VGS = 1.5V ,I D T   = 150°CA<br>T   = 125°CA<br>| ae T  = 85°CA | T  = 25°CA<br>0 VGS = 1.2V 0 T  = -55°CA<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>2.0 ) 0.8<br>Pt Tie] Eyytd (<br>N [CE] V     = 4.5VGS<br>1.6 A<br>T<br>0.6<br>I [S] S<br>T   = 150°CA<br>1.2 VGS = 1.5V [RE] N [-]<br>O<br>0.4 T   = 125°CA<br>U [RCE] T   = 85°CA<br>0.8 O<br>[S] T   = 25°CA<br>0.4 VGS = 1.8V VGS = 2.5V I [N-] D [RA] 0.2 T   = -55°CA<br>eae<br>,<br>O [N)]<br>VGS = 5.0V V GS = 4.5V (D [S]<br>0 a R 0<br>0 S CH 0.4 0.8 EEE 1.2 1.6 2 0 == 0.4 0.8 1.2 1.6<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Fig. 3 Typical On-Resistance  Fig. 4  Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6 0.8<br>VGS = 4.5V<br>1.4 ID = 1.0A<br>ef<br>0.6<br>VGS =  2 .5..5 V<br>ID = 500mA<br>1.2 Lh Ye.<br>0.4 VGS = 2.5V<br>ID = 500mA<br>1.0 LEAL<br>0.2 V GS  = 4.5V<br>0.8 ID = 1.0A<br>eT LL<br>0.6 0<br>-50 rT -25 0 ELL 25 50 75 ELE 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ((°C) 癈 ) TJ, JUNCTION TEMPERATURE  ( 癈 °C )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>D<br>, DRAIN CURRENT (A)<br>I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>**----- End of picture text -----**<br>


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1.2<br>)<br>( [V]<br>1.0<br>G [E]<br>O [LTA] V 0.8 I   = 1mAD<br>H [OLD] I   = 250µAD<br>S 0.6<br>T [HRE]<br>0.4<br>T [E]<br>G [A]<br>, [)] TH 0.2<br>G [S(]<br>V<br>0<br>-50 -25 0 25 50 75 100 125 150<br>T  , AMBIENT TEMPERATURE (°C)A<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature<br>60<br>50 f = 1MHz<br>40<br>Cee<br>Ciss<br>30<br>20<br>po<br>10 Coss<br>0 Sea Crss<br>0 5 10 15 20<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Capacitance<br>5<br>4<br>VDS = 10V<br>ID = 250mA<br>3<br>2<br>1<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 11 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>C, CAPACITANCE (pF)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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1.6<br>[A)] (T 1.2 T   = 25°CA<br>[N] E<br>R<br>R<br>U<br>C 0.8<br>E<br>C<br>R<br>[U] O<br>S<br>I [,] S 0.4<br>0 |<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Fig. 8 Diode Forward Voltage vs. Current<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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1,000<br>T   = 150°CA<br>100<br>C [URRENT(nA)] T   = 125°CA<br>G [E]<br>10<br>L [EAKA]<br>T   = 85°CA<br>1 T   = 25°CA<br>T   = -55°CA<br>D [RAIN-SOURCE]<br>, S<br>D [S] 0.1 A E<br>I<br>2 4 6 8 10 12 14 16 18 20<br>V    , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 10 Typical Drain-Source Leakage Current<br>vs. Drain-Source Voltage<br>, DRAIN-SOURCE LEAKAGE CURRENT (nA)<br>IDSS<br>**----- End of picture text -----**<br>


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1<br>EE D = 0.7 rn tt a<br>D = 0.5<br>bo THEE cee HE HE<br>He rtPE<br>D = 0.3<br>LE ETI [eer IIIT TIT ETT FEET TE<br>0.1 aeSAIN7260IIE<br>D = 0.1<br>risesEEEdeeeemnet te See D = 0.9 ences eee et ease eee<br>D = 0.05<br>me 7 (a ae SHee aaarH<br>97 RJA(t) = r(t) * RJA<br>D = 0.02 RJA = 221221°C/W 癈 /W<br>eA HAH LEH<br>0.01 a 20 Lil<br>oat) D = 0.01 mee ed P(pk) ——aeensr<br>eamR Aeee ee ee t1 eelPT TTT<br>D = 0.005 t2<br>aLa CESTa T J  - T +—| A  = P * R JA (t) TTYT TTTTTT<br>D = Single Pulse Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 12 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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b<br>a a<br>SOT563<br>( poi i Dim  Min  Max  Typ<br>E E1 A  0.55  0.60  0.60<br>b  0.15  0.30  0.20<br>c  0.10  0.18  0.11<br>D  1.50 1.70 1.60<br>L E  1.55 1.70 1.60<br>R.01<br>E1  1.10 1.25 1.20<br>e c e  --  --  0.50<br>e1 e1  0.90  1.10  1.00<br>L  0.10  0.30  0.20<br>D a 8° 9° 7°<br>All Dimensions in mm<br>A<br>a<br>a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT563** 

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C X<br>Y<br>Y1 G C1<br>(O00,<br>X1<br>“Ooo<br>**----- End of picture text -----**<br>


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Value<br>Dimensions<br>(in mm)<br>C  0.500<br>C1  1.270<br>G  0.600<br>X  0.300<br>X1  1.300<br>Y  0.670<br>Y1  1.940<br>**----- End of picture text -----**<br>


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**DMN2400UV** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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October 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN2400UV-7/dual-mosfet-n-channel-20-v-133-a-048-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn2400uv-7/mosfet-aec-q101-dual-n-ch-20v/dp/2543515)
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