# Power MOSFET, N Channel, 20 V, 1.6 A, 0.175 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3405174/)

**URL**: https://novapart.co/products/DMN2310U-7/power-mosfet-n-channel-20-v-16-a-0175-ohm-sot-23
**SKU**: DMN2310U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0410
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 480mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.6A |
| Drain Source On State Resistance | 0.175ohm |
| Gate Source Threshold Voltage Max | 950mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405174/)

**DMN2310U** 7 

**N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|20V|175mΩ @ VGS= 4.5V|1.6A|
||240mΩ @ VGS= 2.5V|1.3A|
||360mΩ @VGS= 1.8V|1.1A|



## **Description** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Features** 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: SOT23 

## **Applications** 

- Load Switch 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Terminals Connections: See Diagram Below  Weight: 0.008 grams (Approximate) 

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**----- Start of picture text -----**<br>
D<br>SOT23<br>D<br>G<br>G<br>G S<br>ESD Protected Gate (A) @ (I @<br>Top View  S<br>Top View<br>Pin-Out  Equivalent Circuit<br>g Information Information (Note 4)<br>Part Number Case Packaging<br>DMN2310U-7  SOT23  3000/Tape & Reel<br>DMN2310U-13 SOT23 10000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

HD2 = Product Type Marking Code YM or YM = Date Code Marking Y or Y = Year (ex: G = 2019) 

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M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2019 2020 2021 2022 2023 2024  2025 2026 2027<br>| Code G H  I  J K  L  M  N  O<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>| Code 1  2  3 4  5 6 7  8 9 O N  D<br>DMN2310U 1 of 7  November 2019<br>www.diodes.com   © Diodes Incorporated<br>**----- End of picture text -----**<br>


DMN2310U Document number: DS41828  Rev. 2 - 2 

**DMN2310U** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +85°C|ID|1.6<br>1.2|A|
|Maximum Continuous BodyDiode Forward Current (Note 6)|||IS|0.82|A|
|Pulsed Drain Current (10μs Pulse, DutyCycle = 1%)|||IDM|4.8|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.48|W|
|Thermal Resistance,Junction to Ambient(Note 5)|Steady State|RJA|260|°C/W|
|Total Power Dissipation(Note 6)||PD|0.68|W|
|Thermal Resistance, Junction to Ambient(Note 6)|Steady State|RJA|184|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~Ee~~|**Symbol**<br>~~Ee~~|**Min**<br>~~Ee~~|**Typ **<br>~~Ee~~|**Max**<br>~~Ee~~|**Unit**<br>~~Ee~~|**Test Condition**<br>~~Ee~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~Ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~Ee~~|BVDSS<br>~~Ee~~|20<br>~~Ee~~|—<br>~~Ee~~|—<br>~~Ee~~|V<br>~~Ee~~|VGS= 0V, ID= 250μA<br>~~Ee~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~Ee~~|IDSS<br>~~Ee~~|—<br>~~Ee~~|—<br>~~Ee~~|1.0<br>~~Ee~~|µA<br>~~Ee~~|VDS= 20V, VGS= 0V<br>~~Ee~~|
|Gate-Source Leakage|IGSS|—|—|10|µA|VGS= ±8V, VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **<br>~~a~~|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)<br>~~a~~|0.45<br>~~a~~|—<br>~~a~~|0.95<br>~~a~~|V<br>~~a~~|VDS= VGS, ID= 250μA<br>~~a~~|
|Static Drain-Source On-Resistance<br>~~a~~<br>~~ee~~|RDS(ON)<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|140<br>~~a~~|175<br>~~a~~|mΩ<br>~~a~~<br>~~ee~~|VGS= 4.5V, ID= 300mA<br>~~a~~|
||||180<br>~~a~~|240<br>~~a~~||VGS= 2.5V, ID= 250mA<br>~~a~~|
||||245<br>~~a~~<br>~~ee~~|360<br>~~a~~<br>~~ee~~||VGS= 1.8V, ID= 100mA<br>~~a~~<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.8<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V, IS= 1A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|38<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|10<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|6<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~||
|Total Gate Charge<br>~~RP~~<br>~~ee~~|Qg<br>~~ee~~|—<br>~~ee~~|0.7<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~|VGS= 4.5V, VDS= 10V,<br>ID= 6A<br>~~ee~~|
|Gate-Source Charge<br>~~ee~~|Qgs<br>~~ee~~|—<br>~~ee~~|0.1<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~ee~~|Qgd<br>~~ee~~|—<br>~~ee~~|0.1<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On Delay Time<br>~~——~~|tD(ON)<br>~~——~~|—<br>~~——~~|8<br>~~——~~|—<br>~~——~~|ns<br>~~——~~|VDD= 10V, VGS= 5V,<br>RL= 1.7Ω, RG= 6Ω<br>~~——~~|
|Turn-On Rise Time<br>~~——~~|tR<br>~~——~~|—<br>~~——~~|138<br>~~——~~|—<br>~~——~~|ns<br>~~——~~||
|Turn-Off Delay Time<br>~~——~~<br>~~rr~~|tD(OFF)<br>~~——~~<br>~~rr~~|—<br>~~——~~<br>~~rr~~|154<br>~~——~~<br>~~rr~~|—<br>~~——~~<br>~~rr~~|ns<br>~~——~~<br>~~rr~~||
|Turn-Off Fall Time<br>~~——~~<br>~~rr~~|tF<br>~~——~~<br>~~rr~~|—<br>~~——~~<br>~~rr~~|180<br>~~——~~<br>~~rr~~|—<br>~~——~~<br>~~rr~~|ns<br>~~——~~<br>~~rr~~||



8. Guaranteed by design. Not subject to product testing. 

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4.0 3<br>VGS = 2.5V VDS = 5V<br>3.5 VGS = 3.0V<br>2.5<br>VGS = 4.0V<br>3.0<br>VGS = 4.5V<br>ee 2 a<br>2.5<br>VGS = 2.0V<br>2.0 1.5<br>= 7 fe<br>VGS = 1.8V<br>1.5<br>© Ze e 1 oe<br>1.0<br>. a VGS = 1.5V 0.5 TJ = 150℃ { TJ = 85℃<br>0.5 j--— __ TJ = 25℃<br>VGS = 1.3V TJ = 125℃ TJ = -55℃<br>0.0 LE 0 a<br>0 0.5 1 1.5 2 2.5 0 1 2 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.4 0.5<br>0.35 PP 0.45 IN ID = 300mA | i<br>0.4 ID = 250mA<br>0.3<br>VGS = 1.8V 0.35 ID = 100mA<br>0.25 ea e 0.3 PP 14<br>0.2 VGS = 2.5V 0.25<br>SRRSEREEEE TACT<br>0.2<br>0.15<br>S VGS = 4.5V e 0.15 aN<br>0.1 Pl EET $$<br>0.1<br>0.05 PEEP Cpls.<br>0.05<br>0 PEt EL TTEy 0 FooPEE<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 3 4 5 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.35 2.2<br>0.3 VGS = 4.5V TJ = 150℃ 2<br>0.25 Lyf TJ = 125℃  to 1.8 TT TTT V  TTT GS = 4.5V, ID = 300mA<br>1.6 VGS = 2.5V, ID = 250mA<br>pa ce<br>0.2<br>TJ = 85℃<br>1.4<br>0.15<br>TJ = 25℃ 1.2<br>e e SoH AE<br>0.1 | | | TJ = -55℃ 1 A N VGS = 1.8V, ID = 100mA<br>0.05<br>Soe 0.8<br>0 Pt Ee tt 0.6 ean<br>0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with Junction<br>and Junction Temperature Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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0.4 1.5<br>0.35 VGS = 1.8V, ID = 100mA<br>0.3 VGS = 2.5V, ID = 250mA<br>1<br>0.25 Pop e<br>xX Va — ID = 1mA<br>0.2<br>Oe<br>0.15 ID = 250μA<br>ere T 0.5 oS<br>0.050.1 Pt VGS = 4.5V, ID = 300mA of<br>0 COPE EEE 0<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature Temperature<br>5 100<br>VGS = 0V f = 1MHz<br>Ciss<br>4 O O ee<br>3 f f Coss<br>10<br>2 fo<br>Crss<br>il ===— ===<br>TJ = 85 [o] C<br>1 7) HEE REE<br>TJ = 150 [o] C<br>TJ = 25 [o] C<br>TJ = 125 [o] C TJ = -55 [o] C<br>0 Z Wy, 1 P| BERREREREE  tt | ET | Tt<br>0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 14 16 18 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 10<br>R PW = 1ms<br>DS(ON)<br>Limited<br>PW = 100µs<br>8<br>CRNA HH<br>1<br>6<br>PW = 10ms<br>4 PW = 100ms                                                              -AYKKNS P| IAT<br>VDS = 10V, ID = 6A 0.1 TJ(Max) = 150 ℃<br>TC = 25 ℃<br>2 Single Pulse PW = 1s<br>DUT on<br>PW = 10s<br>1*MRP Board<br>VGS = 4.5V DC<br>0 0.01<br>Mee lili<br>0 0.5 1 1.5 2 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**DMN2310U** 

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**----- Start of picture text -----**<br>
1<br>D=0.7<br>e D=0.5 a reeset enti meat emia<br>Fe MILLE er eee<br>D=0.3 g S D=0.9<br>ee an MT TTT<br>0.1 Sm LoTU m ETM EImeELA LUA ELA AT<br>Meco D=0.1 I LEILA EEL<br>|_| | Agaeel eee ee a<br>O Pe" D=0.05 AHA<br>D=0.02<br>D=0.01<br>CAEN2000 a ak ak<br>D=0.005<br>0.01 CN 0 oul ALE LAT TTMAMTAeeTTT<br>c D=Single Pulse S<br>a PT ETI TT ee |mil<br>oI Cc COTTE EEN CI CAI TUT CEI RθJA(t) = r(t) * RθJA Mil<br>RθJA = 254.6℃/W<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN2310U** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

**==> picture [450 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
All 7°<br>H<br>GAUGE PLANE SOT23<br>0.25 Dim  Min  Max  Typ<br>J<br>K1 K A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>a C  2.30  2.50  2.40<br>A M D  0.89  1.03  0.915<br>F  0.45  0.60  0.535<br>L L1<br>acorn ae === G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013 0.10 0.05<br>K  0.890 1.00 0.975<br>C = B == K1  0.903 1.10 1.025<br>L  0.45 0.61  0.55<br>L1  0.25  0.55  0.40<br>io === M  0.085 0.150  0.110<br>D a  0°  8°  --<br>F G — All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

**==> picture [136 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Y1 ae C<br>a<br>Co X Ln X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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DMN2310U Document number: DS41828  Rev. 2 - 2 

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**DMN2310U** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/dmn2310u-7/mosfet-n-ch-20v-1-6a-150deg-c/dp/3405174)
---

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