# Power MOSFET, N Channel, 20 V, 1.24 A, 0.175 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3405173/)

**URL**: https://novapart.co/products/DMN2300U-7/power-mosfet-n-channel-20-v-124-a-0175-ohm-sot-23
**SKU**: DMN2300U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1100
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 430mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.24A |
| Drain Source On State Resistance | 0.175ohm |
| Gate Source Threshold Voltage Max | 950mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405173/)

**DMN2300U** & - **20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID Max**(Note 6)|
|20V|175mΩ @ VGS= 4.5V|1.40A @ TA= +25°C|
||240mΩ @ VGS= 2.5V|1.20A @ TA= +25°C|
||360mΩ @ VGS= 1.8V|1.0A @ TA= +25°C|



## **Features and Benefits** 

- On Resistance <200mΩ 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **ESD Protected Gate** 

## **Mechanical Data** 

- Case: SOT23 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Load Switch 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 O **e3** 

- Weight: 0.08 grams (Approximate) 

SOT23 

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ESD PROTECTED<br>2)<br>**----- End of picture text -----**<br>


Top View 

Equivalent Circuit 

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D<br>G S<br>Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Marking**|**Reel Size (inches)**|**Tape Width (mm)**|**Quantity Per Reel**|
|---|---|---|---|---|
|DMN2300U-7|N2U|7|8|3000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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N2U<br>YM<br>**----- End of picture text -----**<br>


N2U = Product Type Marking Code YM = Date Code Marking Y = Year (ex: G = 2019) M = Month (ex: 9 = September) 

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Date Code Key<br>Year 2011 ~ 2019 2020 2021 2022 2023<br>EE Code Y  ~  G H  I  J K<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>ee Code 1  2  3 4  5 6 7  8 9 O N  D<br>**----- End of picture text -----**<br>


1 of 7 **www.diodes.com** 

DMN2300U Document number: DS35309  Rev. 3 - 2 

June 2019 © Diodes Incorporated 

**DMN2300U** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**|||**Symbol**<br>**Value**|**Unit**|
|Drain-Source Voltage|||VDSS<br>20|V|
|Gate-Source Voltage|||VGSS<br>±8|V|
|Continuous Drain Current|Steady<br>State<br>T<br>T<br>T|TA = +25°C (Note 6)<br>TA = +85°C (Note 6)<br>TA = +25°C(Note 5)|ID<br>1.40<br>1.01<br>1.24|A|
|Pulsed Drain Current(Note 7)|||IDM<br>11|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|---|
|**Characteristic**||**Symbol**<br>**Value**|**Unit**|
|Power Dissipation<br>(N<br>(N|Note 5)|PD<br>0.43<br>0.55|W|
||Note 6)||W|
|Thermal Resistance, Junction to Ambient<br>(Note 5<br>(Note 6|Note 5)|RθJA<br>288<br>228|°C/W|
||Note 6)||°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG<br>-55 to +150|-55 to +150<br>°C|



Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

6. Device mounted on 25mm  25mm square copper plate with FR-4 substrate PC board, 2oz copper. 

7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%. 

## **Thermal Characteristics** 

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100 100<br>Single Pulse ID (A) @<br>90 TWO R thja = θJA  [= 2] 2 20C/W [0] [℃] [/W ] I SS ID (A) @ ——-_— PPWW = 100µs  = 100 祍<br>Rthja(t) = Rthja*r(t)RθJA(t) = RθJA * r(t)   PW = 1ms<br>80 BT LT TTJJ  - T- TAA = P * R = P*Rthja (t)θJA(t) i 10 totoie a EE gt<br>70 ID (A) @<br>PW = 10ms<br>60 CCC CCT 1 SESEeeDD err SS | ||<br>50 SEEESSE ID (A) @ DC<br>40 0 CE 0.1 SE ID (A) @  NtSS<br>30 CCCi] eeeeSS| [TitieeTT TTT PW = 10s IPDW (A) @  = 1s TNTS| IPPD W  (A) @  = 10µs  = 10 祍<br>20 BN 0.01 Saimnininn ID (A) @<br>' So TJ(MAX)TJ(MAX) = 150 = 150°C  癈 PW = 100ms mail|<br>10 CCT TAT = 25A = 25°C  癈 SS<br>Single PulseSingle Pulse<br>0 NSICie TT 0.001 ee odng ll<br>0.00001 0.001 0.1 10 1000 0.01 0.1 1 10 100<br>T1, PULSE DURATION SECTION (sec)t1, PULSE DURATION SECTION (sec)  VDSVDS, DRAIN-SOURCE VOLTAGE (V) , DRAIN-SOURCE VOLTAGE<br>Fig. 1 Single Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area<br>P(pk), PEAK TRANSIENT POWER (W)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


2 of 7 **www.diodes.com** 

DMN2300U Document number: DS35309  Rev. 3 - 2 

June 2019 © Diodes Incorporated 

**DMN2300U** [id 

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1 | ee ee ee ee ee ee OEE ee eee - rT<br>E Pie<br>C EE Storettet ett ttt<br>N<br>r(t) @ D=0.5<br>FT Te TTT TH<br>I [TA] pe er<br>I [S] S r(t) @ D=0.3 | lll r(t) @ D=0.9 TM LTTE ET<br>E r(t) @ D=0.7<br>R<br>L 0.1 ae CUII-EgaT| |) |wna||<br>A r(t) @ D=0.1<br>M<br>R<br>E | r(t) @ D=0.05 | TTTLute| [Pagartw titiTt TT oTTrt TT TTECT TFCTT SCTTTSCCTT<br>T [H] Fyepec THT TITTLEnTTT<br>T<br>N r(t) @ D=0.0 2 1<br>I [E] S 0.01 Tee pt ett nANTE r(t) @ D=0.01 A|aTTTTITa a<br>N Se a eT eT TT!<br>boa ARK HEH FH FH] HH EHH HH} HH FH HH} FH H<br>T [RA] a Pl r(t) @ D=0.005 TT Tt oT TT TT RθJAR (t) = r(t)*R(t) = r(t) * RJAJA θJA il<br>[,][t)] R [(] ST SC RDuty Cycle, D = t1 / t2θJA R = 220C/WDuty Cycle, D = t1/t2= 220JA ℃ /W  |<br>r(t) @ D=Single Pulse<br>0.001 Speerrranet(negQ aN NA |<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec) t1, PULSE DURATION TIME (sec)<br>Fig. 3 Transient Thermal Resistance<br>Fig. 3 Transient Thermal Resistance<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**<br>~~(~~|**Typ **<br>~~(O~~|**Max**<br>~~(O~~|**Unit**<br>~~(O~~|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **<br>~~(~~<br>~~(O~~<br>~~Ce~~<br>~~DS(OR~~|||||||
|Drain-Source Breakdown Voltage<br>~~GO~~|BVDSS<br>~~GO~~|20<br>~~GO~~<br>~~DS~~<br>~~DO~~|—<br>~~GO~~<br>~~DS~~<br>~~DO~~|—<br>~~GO~~<br>~~DS~~<br>~~S(O~~|V<br>VGS<br>~~GO~~<br>~~(OR~~<br>~~S(O~~|GS= 0V,ID= 10μA<br>~~GO~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~GD~~|IDSS<br>~~GD~~|—<br>~~DS~~<br>~~GD~~<br>~~DO~~|—<br>~~DS~~<br>~~GD~~<br>~~DO~~<br>~~(OO~~|1<br>~~DS ~~<br>~~GD~~<br>~~S(O~~<br>~~(OO~~|μA<br>VDS<br> ~~(OR~~<br>~~GD~~<br>~~S(O~~<br>~~OS(~~|DS= 20V,VGS= 0V<br>~~GD~~<br>~~(~~|
|Gate-Source Leakage<br>~~nD~~|IGSS<br>~~nD~~|—<br>~~DO~~<br>~~nD~~|—<br>~~DO~~<br>~~nD~~<br>~~(OO~~|10<br>~~S(O~~<br>~~nD~~<br>~~(OO~~|μA<br>VGS<br>~~S(O~~<br>~~nD~~<br>~~OS(~~|GS= ±8V,VDS= 0V<br>~~nD~~<br>~~(~~|
|**ON CHARACTERISTICS(Note 8) **<br>~~(OO OS(~~<br>~~Ce~~<br>~~USGO~~<br>~~S(O~~|||||||
|Gate Threshold Voltage<br>~~GO~~|VGS(TH)<br>~~GO~~|0.45<br>~~GO~~<br>~~US~~|—<br>~~GO~~<br>~~GO~~<br>~~|~~|0.95<br>~~GO~~<br>~~S(O~~<br>~~|~~|V<br>VDS<br>~~GO~~<br>~~S(O~~<br>~~Po~~|DS= VGS,ID= 250μA<br>~~GO~~<br>~~Po~~|
|Static Drain-Source On-Resistance|RDS(ON)|—<br>~~US ~~<br>~~RD~~|—<br> ~~GO~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ND~~|175<br>~~S(O~~<br>~~|~~<br>~~|~~|mΩ<br>VGS<br>VGS<br>VGS<br>~~S(O~~<br>~~Po~~<br>~~Pr~~<br>~~Pe~~<br>~~(OO~~|GS= 4.5V,ID= 300mA<br>~~Po~~<br>~~Pr~~|
|||||240<br>~~|~~<br>~~|~~<br>~~|~~||GS= 2.5V,ID= 250mA<br>~~Po~~<br>~~Pr~~<br>~~Pe~~|
|||||360<br>~~|~~<br>~~|~~<br>~~ND~~||GS= 1.8V,ID= 100mA<br>~~Pr~~<br>~~Pe~~|
|Forward Transfer Admittance<br>~~GO~~||Yfs|<br>~~GO~~|40<br>~~GO~~<br>~~RD~~<br>~~GD~~|—<br>~~|~~<br>~~GO~~<br>~~ND~~<br>~~GO~~|—<br>~~|~~<br>~~GO~~<br>~~ND~~<br>~~S(O~~|mS<br>VDS<br>~~Pe~~<br>~~GO~~<br>~~(OO~~<br>~~S(O~~|DS= 3V,ID= 30mA<br>~~Pe~~<br>~~GO~~|
|Diode Forward Voltage<br>~~GD~~|VSD<br>~~GD~~|—<br>~~RD ~~<br>~~GD~~<br>~~GD~~|0.7<br> ~~ND~~<br>~~GD~~<br>~~GO~~|1.2<br>~~ND~~<br>~~GD~~<br>~~S(O~~|V<br>VGS<br>~~(OO~~<br>~~GD~~<br>~~S(O~~|GS= 0V,IS= 300mA<br>~~GD~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~GDGO~~<br>~~S(O~~<br>~~Ce~~|||||||
|Input Capacitance<br>~~GO~~|Ciss<br>~~GO~~|—<br>~~GO~~|67.6<br>~~GO~~|—<br>~~GO~~|pF<br>VDS<br>f = 1.0MHz<br>pF<br>pF<br>~~GO~~<br>~~GD~~<br>~~I~~<br>~~S(O~~|DS= 20V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance<br>~~GD~~|Coss<br>~~GD~~|—<br>~~GD~~|9.7<br>~~GD~~|—<br>~~GD~~|||
|Reverse Transfer Capacitance<br>~~I~~|Crss<br>~~I~~|—<br>~~I~~<br>~~GO~~|7.5<br>~~I~~<br>~~GO~~|—<br>~~I~~<br>~~S(O~~|||
|Gate Resistance<br>~~GO~~|Rg<br>~~GO~~|—<br>~~GO~~<br>~~GO~~|70<br>~~GO~~<br>~~GO~~|—<br>~~GO~~<br>~~S(O~~|Ω<br>VDS<br>~~GO~~<br>~~S(O~~|DS= 0V,VGS= 0V,f = 1MHz<br>~~GO~~|
|Total Gate Charge<br>~~eG~~|Qg<br>~~eG~~|—<br>~~GO~~<br>~~eG~~|1.6<br>~~GO~~<br>~~eG~~|—<br>~~S(O~~<br>~~eG~~|nC<br>VGS<br>ID= 1A<br>nC<br>nC<br>~~S(O~~<br>~~eG~~<br>~~GO~~<br>|GS= 4.5V, VDS= 15V,<br>= 1A|
|Gate-Source Charge<br>~~GO~~<br>~~a~~|Qgs<br>~~GO~~<br>|—<br>~~GO~~<br>|0.2<br>~~GO~~<br>|—<br>~~GO~~<br>|||
|Gate-Drain Charge<br>~~a~~|Qgd<br>|—<br>|0.2<br>|—<br>|||
|Turn-On DelayTime<br>~~aGO~~|tD(ON)<br>~~GO~~|—<br>~~GO~~|3.5<br>~~GO~~|—<br>~~GO~~|ns<br>VDS<br>VGS<br>ns<br>ns<br>ns<br>~~GO~~<br>~~eG~~<br>~~GO~~<br>~~nD~~|DS= 10V, ID = 1A<br>GS= 10V, RG= 6Ω|
|Turn-On Rise Time<br>~~eG~~|tR<br>~~eG~~|—<br>~~eG~~|2.8<br>~~eG~~|—<br>~~eG~~|||
|Turn-Off DelayTime<br>~~GO~~|tD(OFF)<br>~~GO~~<br>~~GRD~~|—<br>~~GO~~<br>~~CO~~|38<br>~~GO~~<br>~~EE~~|—<br>~~GO~~<br>~~I~~|||
|Turn-Off Fall Time<br>~~nD~~|tF<br>~~nD~~<br>~~GRD~~|—<br>~~nD~~<br>~~CO~~|13<br>~~nD~~<br>~~EE~~|—<br>~~nD~~<br>~~I~~|||



3 of 7 **www.diodes.com** 

DMN2300U Document number: DS35309  Rev. 3 - 2 

June 2019 © Diodes Incorporated 

**DMN2300U** 

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2.0 2.0<br>VGS = 4.5V<br>VGS = 2.5V V     = 5VDS<br>VGS = 2.0V<br>1.5 V GS  = 1.8V 1.5<br>[A)]<br>T [(]<br>VGS = 1.5V [N] E<br>R<br>R<br>—_— U cans<br>1.0 C 1.0<br>| Zana [IN] A of<br>R<br>D<br>, D<br>0.5 I 0.5 T   = 150°CA<br>T   = 125°CA T   = 85°CA<br>VGS = 1.2V T   = 25°CA<br>T   = -55°CA<br>0 JaneannalPUTT 0 of Dy)<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 4 Typical Output Characteristic Fig. 5  Typical Transfer Characteristic<br>0.4 ) 0.8<br>[(] CE V     = 4.5VGS<br>[N] A<br>0.3 EAL 0.6<br>[SIST] E<br>- [R]<br>[N] O<br>E<br>0.2 C 0.4<br>VGS = 2.5V R<br>UT [U] O<br>VGS = 4.5V - [S] T   = 125°CA T   = 150°CA<br>0.1 He [IN] RA 0.2<br>D T   = 85°CA<br>, )N T   = 25°CA<br>O(S T   = -55°CA<br>D<br>0 R 0<br>0 EEEALLLELE 0.4 0.8 1.2 1.6 2 0 0.25 0.5 0.75 1 1.25 1.5 = 1.75 2<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Fig. 6  Typical On-Resistance  Fig. 7 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 0.8<br>VGS = 4.5V<br>1.4 I D  = 1.0A<br>PTTTT TTY TTL<br>0.6<br>VGS = 2.5V<br>ID = 500mA<br>1.2<br>0.4<br>coe ELLE<br>1.0<br>VGS = 2.5V<br>ID = 500mA<br>rT 0.2 PP PCELE<br>0.8<br>ATT Le VGS = 4.5V e<br>ID = 1.0A<br>0.6 0<br>-50 TTT -25 0 25 50 75 100 125 150 -50 PAT -25 0  TL 25 50 75 100 125 150<br>TTAA, AMBIENT TEMPERATURE (°C) , AMBIENT TEMPERATURE ( 癈 ) TTAA, AMBIENT TEMPERATURE (°C) , AMBIENT TEMPERATURE ( 癈 )<br>Fig. 8 On-Resistance Variation with Temperature Fig. 9 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DSON<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMN2300U Document number: DS35309  Rev. 3 - 2 

June 2019 

© Diodes Incorporated 

**DMN2300U** 

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1.2 2.0<br>1.0 TTT] IJ. TL L_LIL_l<br>1.6<br>= —t_Pr_<br>0.8 ~~ ID = 1mA tL<br>1.2 TT A  = 25°C A = 25 癈<br>0.6 oS ID I D = 250µA   = 250 礎 ee teTT _ fo<br>0.8<br>0.4 SEN ee<br>0.4<br>0.2 ey fpf fd.~ ee<br>0 0 —t LYtf<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2<br>TTAA, AMBIENT TEMPERATURE (°C) , AMBIENT TEMPERATURE ( 癈 ) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 10 Gate Threshold Variation vs. Ambient Temperature Fig. 11 Diode Forward Voltage vs. Current<br>1,000 100,000<br>TT AA  = 125 = 125°C  癈<br>10,000<br>a [nA)] T [(] es T   = 150°CA<br>100 SSSe00008 [N] E __ T   = 125°CA<br>R<br>=== SSS R 1,000 =a<br>U<br>ee C es<br>TTAA = 85°C  = 85 癈 G [E] T   = 85°CA<br>FE 100 —— ——— T   = 25°CA _<br>10 TT A  = 25°C  = 25 癈<br>ff TT | A  = -55°C  = -55  I 癈 L [EAKA] , S AO T   = -55°CA<br>G [S] 10<br>=e I Z o<br>fF [| | | [ [ | | tf ees eee ee ee<br>1 P| tt | tt fd 1 a<br>2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12<br>VDS, DRAIN-SOURCE VOLTAGE (V)  V    , GATE-SOURCE VOLTAGE (V)GS<br>Fig. 12 Typical Leakage Current  Fig.13 Leakage Current vs. Gate-Source Voltage<br>vs. Drain-Source Voltage<br>1000   8<br>f = 1MHz<br>On=SSS=SS = 6 P| V DS = 15V SfJ.<br>100   Ciss  ID = 1A<br>——SERRE Ee e 4 ef VAen<br>Coss<br>10<br>— 2 y,<br>Crss<br>BESS SSS 7<br>1   PPE 0<br>0 0.5 1 1.5 2 2.5 3<br>0  4  8  12  16  20<br>Fig. 14 Typical Junction Capacitance VDS, DRAIN-SOURCE VOLTAGE (V)  Fig. 14 Gate-Charge CharacteristicsFig. 15 Gate Charge Characteristics QQgg, TOTAL GATE CHARGE (nC) , TOTAL GATE CHARGE (nC)<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>, LEAKAGE CURRENT (nA)<br>IGSS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>S<br>, SOURCE CURRENT (A)<br>I<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMN2300U 

June 2019 © Diodes Incorporated 

Document number: DS35309  Rev. 3 - 2 

**DMN2300U** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [26 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>**----- End of picture text -----**<br>


**==> picture [482 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
All 7°<br>H<br>SOT23<br>GAUGE PLANE0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K B  1.20 1.40 1.30<br>C  2.30  2.50  2.40<br>a D  0.89  1.03  0.915<br>A M F  0.45  0.60  0.535<br>a a h f L y L1 e===> G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>iy ese ====<br>C B K1  0.903  1.10  1.025<br>L  0.45 0.61  0.55<br>L1  0.25 0.55 0.40<br>M  0.085 0.150 0.110<br>oh ====<br>a  0°  8°  --<br>D<br>All Dimensions in mm<br>F G<br>— — == ee ee<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

Y Y1 ~~aia.~~ C ~~4 Ee PT~~ X ~~LT~~ X1 

|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



6 of 7 **www.diodes.com** 

DMN2300U Document number: DS35309  Rev. 3 - 2 

June 2019 © Diodes Incorporated 

**DMN2300U** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMN2300U Document number: DS35309  Rev. 3 - 2 

June 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN2300U-7/power-mosfet-n-channel-20-v-124-a-0175-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn2300u-7/mosfet-n-ch-20v-1-24a-150degc/dp/3405173)
---

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