# Power MOSFET, N Channel, 20 V, 2 A, 0.11 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3127329/)

**URL**: https://novapart.co/products/DMN2230UQ-7/power-mosfet-n-channel-20-v-2-a-011-ohm-sot-23
**SKU**: DMN2230UQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1240
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.081ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 600mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.11ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127329/)

**DMN2230UQ N-CHANNEL ENHANCEMENT MODE MOSFET** |__| 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|BVDSS<br>20V|RDS(ON)max|IDmax<br>TA= +25°C|
||110mΩ @ VGS= 4.5V|2A|
||145mΩ @ VGS= 2.5V|1.7A|
||230mΩ @ VGS= 1.8V|1.3A|



## **Features** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

- General Purpose Interfacing Switch 

- Power Management Functions 

- Boost Application 

- Analog Switch 

- Terminal Connections: See Diagram 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe.  Solderable per MIL-STD-202, Method 208 

- Weight: 0.008 grams (Approximate) 

SOT23 

Top View 

D ~~fo~~ G S Top View Internal Schematic 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMN2230UQ-7|SOT23|3,000/Tape & Reel|
|DMN2230UQ-13|SOT23|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

22N = Marking Code YM = Date Code Marking 22N Y = Year (ex: U = 2007) M = Month (ex: 9 = September) Date Code Key **Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017** ~~ee~~ **Code** U V W X Y Z A B C D E **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~es cc~~ DMN2230UQ 1 of 5 June 2015 Document number: DS37497 Rev. 1 - 2 **www.diodes.com** © Diodes Incorporated 

**DMN2230UQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|VDSS|20|V|
|Gate-Source Voltage|VGSS|±12|V|
|Drain Current(Note 6)|ID|2.0|A|
|Pulsed Drain Current(Note 7)|IDM|7|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 6)|PD|600|mW|
|Thermal Resistance,Junction to Ambient|RJA|208|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|20|||V|VGS= 0V,ID= 10µA|
|Zero Gate Voltage Drain Current|IDSS|||1|µA|VDS= 20V,VGS= 0V|
|Gate-Source Leakage|IGSS|||10|µA|VGS=12V,VDS= 0V|
|**ON CHARACTERISTICS(Note 8)**|||||||
|Gate Threshold Voltage|VGS(th)|0.5||1.0<br>~~|~~|V<br>~~|~~|VDS= VCS,ID= 250µA|
|Static Drain-Source On-Resistance<br>~~po~~|RDS (ON)<br>~~po~~|<br>~~po~~|81<br>113<br>170<br>~~po~~|110<br>145<br>230<br>~~po~~<br>~~|~~|mΩ<br>~~po~~<br>~~|~~|VGS= 4.5V,ID= 2.5A<br>~~po~~|
|||||||VGS= 2.5V,ID= 1.5A<br>~~po~~|
|||||||VGS= 1.8V,ID= 1.0A<br>~~po~~|
|Forward Transfer Admittance<br>~~po~~||Yfs|<br>~~po~~|<br>~~po~~|5<br>~~po~~|<br>~~po~~<br>~~|~~|S<br>~~po~~<br>~~|~~|VDS= 5V,ID= 2.4A<br>~~po~~|
|Diode Forward Voltage(Note 8)|VSD||0.8|1.1<br>~~|~~|V<br>~~|~~|VGS= 0V,IS= 1.05A|
|**DYNAMIC CHARACTERISTICS**|||||||
|Input Capacitance|Ciss||188||pF|VDS= 10V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance|Coss||44||pF||
|Reverse Transfer Capacitance|Crss||30||pF||
|Total Gate Charge|Qg||2.3||nC|VDS= 10V, ID= 11.6A<br>~~ee~~|
|Gate-Source Charge|Qgs||0.3||nC||
|Gate-Drain Charge<br>~~——_————~~|Qgd||0.5||nC<br>~~ee~~||
|Turn-On DelayTime<br>~~——_————~~|td(on)||8||ns<br>~~ee~~|VDD= 10V, RL= 10Ω<br>ID= 1A, VGEN= 4.5V, RG= 6Ω<br>~~ee~~|
|Rise Time<br>~~——_————~~|tr||3.8||||
|Turn-Off DelayTime<br>~~——_————~~|td(off)||19.6||||
|Fall Time<br>~~——_————~~|tf||8.3||||



Notes: 6. Device mounted on FR-4 PCB, or minimum recommended pad layout. 

7. Repetitive rating, pulse width limited by junction temperature. 

8. Short duration pulse test used to minimize self-heating effect. 

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**DMN2230UQ** 

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**----- Start of picture text -----**<br>
10 8<br>7<br>8<br>_ 30V / Veg = 2.5V 6 ‘pe Ta = 85°C Lif<br>< fs 7 _ ies. //aee<br>Ss 5 ae panes Wr T aso<br>e 6 VW a) 4 Ae<br>Op 4 ay<br>3<br>a Q<br>2 | : Bee? eee<br>2<br>2<br>2)  ADR ee<br>1<br>|——— a f e<br>0 boo 0 t<br>0 0 0.5 1 1.5 2 2.5 3 3.5 4<br>Vos: DRAI N- SOURCE VOLTAGE (V) Ves: GATE SOURCE VOLTAGE (V)<br>Fig . 1 Typical Output Characteristic Fig . 2 Typical Transfer Characteristics<br>1 1.8<br>VGS = 2.5V<br>fT | TUT ID = 1.5A<br>PE 1.6 VGS = 4.5V y<br>ID = 2.5A<br>aelA 1.4 | ff WJ<br>VGS = 1.8V<br>el el W/4<br>0.1 nl VGS = 2.5V Le<br>es a eM || 1.2 Lr<br>V GS  = 4.5V<br>FE EHH WA VGS = 1.8V<br>fT dT TE ID = 1.0A<br>LT TE 1 /<br>a wr<br>a a ZA<br>0.8<br>0.01<br>0.01 TIN 0.1 1 10 = 0.6 A<br>ID, DRAIN-SOURCE CURRENT -50 -25 0 25 50 75 100 125 150<br>Fig. 3 On-Resistance  vs.  TA, AMBIENT TEMPERATURE (°C)<br>Drain-Source Current & Gate Voltage Fig. 4 Normalized Static Drain-Source On-Resistance<br>vs. Ambient Temperature<br>1 1,000<br>f = 1MHz<br>0.8 ID = 250µA<br>mE ELT<br>0.6 |PN Ciss<br>~ 100 TTT<br>0.4 ELLER. \<br>Coss<br>0.2 EEE _ WALT Crss<br>0 EL 10 liiaiaa<br>-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20<br>TA, AMBIENT TEMPERATURE (C) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 5 Gate Threshold Variation with Temperature Fig. 6 Typical Total Capacitance<br>  NORMALIZED<br>DS(ON)<br>R<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>C, TOTAL CAPACITANCE (pF)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


3 of 5 

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June 2015 

**www.diodes.com** 

© Diodes Incorporated 

**DMN2230UQ** | 

**==> picture [440 x 656] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10<br>ee ee VDSDS = 10V<br>1 8 I D   11.6== A<br>a ee ee ee AY ee ee<br>0.1 aeoJZ ffAasfe 6 --<br>0.01 aye ff fpf 4<br>0.001 2<br>— fff ff :<br>0.0001 Si VY) fs. fe [| | | 0<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 3 4<br>VSD, SOURCE-DRAIN VOLTAGE (V) Qgg [[, TOTAL GATE CHARGE ]]  (nC)<br>Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Fig. 8 Gate Charge<br>100<br>ee ee OO OOO<br>Lt PTTT]<br>RDS(on)<br>10 a Limited ri PW = 10µs<br>eS DC NAN S|<br>1 SN PW = 10s<br>PW = 1s<br>PW = 100ms<br>PW = 10ms<br>0.1 ftill TJ(max) = 150°C PW P  = 1ms W = 100µs NSNE<br>TA = 25°C<br>Single Pulse<br>DUT on 1 * MRP Board ee<br>VGS = 12V<br>0.01 CE<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 SOA, Safe Operation Area<br>ge Outline Dimensions e Outline Dimensions<br>Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.<br>All 7° fe SOT23<br>H Dim  Min  Max  Typ<br>GAUGE PLANE A  0.37  0.51  0.40<br>0.25 B  1.20 1.40 1.30<br>J<br>K1 K C  2.30 2.50 2.40<br>[oH0 _ | ee D  0 ee .89 1. ee 03 0.915<br>ee ee " : —-—}-<br>a F  0.45 0.60 0.535<br>A i M v4 ee G  1.78  2.05  1.83<br>= L L1 ee H  2.80  ee 3.00  ee 2.90<br>J  0.013  0.10  0.05<br>{| me eeee ee ee<br>K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>1 | a | | ee L1  0.25  ee 0.55  ee 0.40<br>_ TT) TT ee M  0. ee 085 0.1 ee 50 0.110<br>D a 8°<br>a _ — F G | | fo ee All Dimensions in mm<br>D<br>, DRAIN CURRENT (A)<br>I<br>, SOURCE CURRENT (A)<br>IS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>VDSDS = 10V<br>8 I D   11.6== A<br>6 --<br>4<br>2<br>:<br>0<br>0 1 2 3 4 5<br>Qgg [[, TOTAL GATE CHARGE ]]  (nC)<br>Fig. 8 Gate Charge<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions e Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

4 of 5 **www.diodes.com** 

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**DMN2230UQ** 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [184 x 109] intentionally omitted <==**

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Y<br>Z<br>a Lb C<br>X E<br>WoloKab<br>**----- End of picture text -----**<br>


**==> picture [107 x 57] intentionally omitted <==**

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Dimensions Value (in mm)<br>Z  2.9<br>X  0.8<br>Y  0.9<br>C  2.0<br>E  1.35<br>**----- End of picture text -----**<br>


## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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