# Power MOSFET, N Channel, 20 V, 2 A, 0.081 ohm, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:3943554RL/) **URL**: https://novapart.co/products/DMN2230U-7/power-mosfet-n-channel-20-v-2-a-0081-ohm-sot-23 **SKU**: DMN2230U-7 **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1460 **Stock**: 1000+ **Lead Time**: 190 days (indicative) ## Description Available until stocks are exhausted ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 600mW | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 4.5V | | Transistor Case Style | SOT-23 | | Drain Source Voltage Vds | 20V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 2A | | Drain Source On State Resistance | 0.081ohm | | Gate Source Threshold Voltage Max | 1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3943554RL/) **DMN2230U** **N-CHANNEL ENHANCEMENT MODE MOSFET** ## **Features** - Low On-Resistance - 110 mΩ @ VGS = 4.5V - 145 mΩ @ VGS = 2.5V - 230 mΩ @ VGS = 1.8V - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - **Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1, 2 and 3)** ## **Mechanical Data** - Case: SOT23 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram - Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.008 grams (approximate) - **Qualified to AEC-Q101 Standards for High Reliability** **==> picture [197 x 100] intentionally omitted <==** **----- Start of picture text -----**
SOT23
D
w@ (4) G S
Top View
Top View
Internal Schematic
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## **Ordering Information** (Note 4) |**Ordering Informationg Information Information** (Note 4)||| |---|---|---| |**Part Number**|**Case**|**Packaging**| |DMN2230U-7|SOT23|3000/Tape &Reel| Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. 4. For packaging details, go to our website at http://www.diodes.com. ## **Marking Information** **==> picture [523 x 125] intentionally omitted <==** **----- Start of picture text -----**
22N = Marking Code
YM = Date Code Marking
22N
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
EE Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
et Code 1 2 3 4 5 6 7 8 9 O N D
YM
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1 of 5 **www.diodes.com** DMN2230U Document number: DS31180 Rev. 5 - 2 January 2012 © Diodes Incorporated **DMN2230U** ## **Maximum Ratings** @TA = 25°C unless otherwise specified |**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Units**| |Drain-Source Voltage|VDSS|20|V| |Gate-Source Voltage|VGSS|±12|V| |Drain Current(Note 5)|ID|2.0|A| |Pulsed Drain Current(Note 6)|IDM|7|A| ## **Thermal Characteristics** @TA = 25°C unless otherwise specified |**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Units**| |Total Power Dissipation(Note 5)|PD|600|mW| |Thermal Resistance,Junction to Ambient|RθJA|208|°C/W| |Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C| ## **Electrical Characteristics** @TA = 25°C unless otherwise specified |**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**| |**OFFCHARACTERISTICS (Note 7)**||||||| |Drain-Source Breakdown Voltage|BVDSS|20|⎯|⎯|V|VGS= 0V,ID= 10μA| |Zero Gate Voltage Drain Current|IDSS|⎯|⎯|1|μA|VDS= 20V,VGS= 0V| |Gate-Source Leakage|IGSS|⎯|⎯|±10|μA|VGS=±12V,VDS= 0V| |**ON CHARACTERISTICS (Note 7)**
~~——~~||||||| |Gate Threshold Voltage
~~CT~~|VGS(th)
~~CT~~|0.5
~~CT~~|⎯
~~CT~~|1.0
~~CT~~|V
~~CT~~|VDS= VCS,ID= 250μA
~~CT~~
~~——~~| |Static Drain-Source On-Resistance
~~CT~~|RDS (ON)
~~CT~~|⎯
~~CT~~|81
113
170
~~CT~~|110
145
230
~~CT~~|mΩ
~~CT~~|VGS= 4.5V,ID= 2.5A
~~CT~~
~~——~~| |||||||VGS= 2.5V,ID= 1.5A
~~CT~~
~~——~~| |||||||VGS= 1.8V,ID= 1.0A
~~CT~~
~~——~~| |Forward Transfer Admittance
~~CT~~||Yfs|
~~CT~~|⎯
~~CT~~|5
~~CT~~|⎯
~~CT~~|S
~~CT~~|VDS= 5V,ID= 2.4A
~~CT~~
~~——~~| |Diode Forward Voltage(Note 7)
~~—~~|VSD|⎯|0.8|1.1|V
~~ee~~|VGS= 0V,IS= 1.05A
~~——~~
~~ee~~| |**DYNAMIC CHARACTERISTICS**
~~—~~
~~ee~~||||||| |Input Capacitance
~~—~~|Ciss|⎯|188|⎯|pF
~~ee~~|VDS= 10V, VGS= 0V
f = 1.0MHz
~~ee~~| |Output Capacitance
~~—~~|Coss|⎯|44|⎯|pF
~~ee~~|| |Reverse Transfer Capacitance
~~—~~|Crss|⎯|30|⎯|pF
~~ee~~|| |Total Gate Charge
~~—~~
~~i~~|Qg
~~i~~|⎯
~~i~~|2.3
~~i~~|⎯
~~i~~|nC
~~ee~~
~~i~~|VDS= 10V, ID= 11.6A
~~ee~~
~~i~~
~~ee~~| |Gate-Source Charge
~~—~~
~~i~~|Qgs
~~i~~|⎯
~~i~~|0.3
~~i~~|⎯
~~i~~|nC
~~ee~~
~~i~~|| |Gate-Drain Charge
~~i~~
~~———~~|Qgd
~~i~~|⎯
~~i~~|0.5
~~i~~|⎯
~~i~~|nC
~~i~~
~~ee~~|| |Turn-On DelayTime
~~i~~
~~———~~|td(on)
~~i~~|⎯
~~i~~|8
~~i~~|⎯
~~i~~|ns
~~i~~
~~ee~~|VDD= 10V, RL= 10Ω
ID= 1A, VGEN= 4.5V, RG= 6Ω
~~i~~
~~ee~~| |Rise Time
~~———~~|tr|⎯|3.8|⎯||| |Turn-Off DelayTime
~~———~~|td(off)|⎯|19.6|⎯||| |Fall Time
~~———~~|tf|⎯|8.3|⎯||| Notes: 5. Device mounted on FR-4 PCB, or minimum recommended pad layout 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 **www.diodes.com** DMN2230U Document number: DS31180 Rev. 5 - 2 January 2012 © Diodes Incorporated **DMN2230U** **==> picture [477 x 676] intentionally omitted <==** **----- Start of picture text -----**
10 8
7
8
6
_ ff / | ~ ae Tip T, = 150°C
_ | / 5 5 Ty =-55°C // U,
2 6 el 4 CO
4
3
~ ~ 2
2
a | dt ro AP
0 POOLE ph 01 PTTs]y | lf
005 1 15 2 25 b e e 0 a 0.5 1 Ae 1.5 2 2.5 3 3.5 4
Vps: DRAI N- SOURCE VOLTAGE (V) Vg: GATE SOURCE VOLTAGE (V)
Fig . 1 Typical Output Characteristic Fig . 2 Typical Transfer Characteristics
1 1.8
VGS = 2.5V
ID = 1.5A
aPeete ee 1.6 VGS = 4.5V y fi
ID = 2.5A
eETL UEeETE elET 1.4 P) | f Wvy
VGS = 1.8V
0.1 ieSt]Aaar VVGS GS ee = 2.5V = 4.5V a UT || 1.2 YaiyWj
Peetea VIGSD = 1.0A = 1.8V
a eennn 1 OK /
PETTen ETCoo Cn ZO A
0.8
0.01
0.01 CCTM 0.1 1 10 | 0.6
ID, DRAIN-SOURCE CURRENT -50 -25 0 25 50 75 100 125 150
Fig. 3 On-Resistance vs. TA, AMBIENT TEMPERATURE (°C)
Drain-Source Current & Gate Voltage Fig. 4 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
1 1,000
f = 1MHz
0.8 ID = 250µA
0.6 Ciss
100
0.4
BRRRRENE \ PLETE
Se
Coss
0.2 Crss
0 10
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20
TA, AMBIENT TEMPERATURE (C) VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Gate Threshold Variation with Temperature Fig. 6 Typical Total Capacitance
)Ω
NORMALIZED
, STATIC DRAIN-SOURCE DS(ON)
DS(ON) ON-RESISTANCE ( R
R
, GATE THRESHOLD VOLTAGE (V)
C, TOTAL CAPACITANCE (pF)
GS(TH)
V
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3 of 5 DMN2230U Document number: DS31180 Rev. 5 - 2 January 2012 © Diodes Incorporated **www.diodes.com** **DMN2230U** | **==> picture [218 x 429] intentionally omitted <==** **----- Start of picture text -----**
10
1
|_| ff Ys if j|7 | f|
0.1
rere
22a
0.01
Cf ff fo fe
| fF iF | Aft fy
0.001
0.0001 2 An) ae eee ee
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
100
CT TT TP
RDS(on)
10 ot Limited Cen rin PW = 10µs
NE
|_| _AUNANE NANT Ee
ETN DC
1 PW = 10s
PW = 1s
Ce P W = 100ms SENSES
PW = 10ms
Lele PW = 1ms NSROE
0.1 ail TJ(max) = 150°C PW = 100µs |ONG
TA = 25°C
Single PulseDUT on 1 * MRP Board ee
VGS = 12V
0.01 Frc Con
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 SOA, Safe Operation Area
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID
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**==> picture [202 x 209] intentionally omitted <==** **----- Start of picture text -----**
10
VDS = 10V
8 I D 11.6= A
6
4
2
0
0 1 2 3 4 5
Qg [, TOTAL GATE CHARGE ] (nC)
Fig. 8 Gate Charge
GATE THRESHOLD VOLTAGE (V)
GS
V
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## **Package Outline Dimensions** **==> picture [344 x 162] intentionally omitted <==** **----- Start of picture text -----**
A SOT23
o i e PO Dim Min Max Typ
A 0.37 0.51 0.40
ro ee ee ee
i ee B 1.20 ee 1.40 ee 1.30
B C C 2.30 2.50 2.40
Hy eeee D 0 ee . ee 89 1. eeee 03 0.915
=a ee F 0.4 ee 5 0 ee .60 0.535
= Ld ee G 1.7 ee 8 2. ee 05 1.83
k—— H ——| ee H 2.80 ee 3.00 ee 2.90
ee J 0.013 ee 0.10 ee 0.05
K M K 0.903 1.10 1.00
(non)a= K1 . ee K1 - ee - 0.400
D
J F __ G L \ = eeeeee M L 0.0850.4 eeeeee 5 00.18 eeeeee .61 00.11 .55
α 0° 8° -
ee ee ee
|rr—sY All Dim rc ensions in mm
**----- End of picture text -----**
4 of 5 **www.diodes.com** DMN2230U Document number: DS31180 Rev. 5 - 2 January 2012 © Diodes Incorporated **DMN2230U** ## **Suggested Pad Layout** **==> picture [340 x 110] intentionally omitted <==** **----- Start of picture text -----**
Y
Dimensions Value (in mm)
Z py [+b C Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
X E
WalonHab
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