# Power MOSFET, N Channel, 20 V, 760 mA, 0.6 ohm, X1-DFN1006, Surface Mount

![Product image](https://novapart.co/image/farnell:3943553/)

**URL**: https://novapart.co/products/DMN21D2UFB-7B/power-mosfet-n-channel-20-v-760-ma-06-ohm-x1
**SKU**: DMN21D2UFB-7B
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0780
**Stock**: 500+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 380mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | X1-DFN1006 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 760mA |
| Drain Source On State Resistance | 0.6ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943553/)

**DMN21D2UFB** [ **20V N-CHANNEL  ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

||||
|---|---|---|
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|20V|0.99Ω @ VGS= 4.5V|760mA|
||1.2Ω @ VGS= 2.5V|700mA|
||2.4Ω @ VGS= 1.8V|500mA|
||3.0Ω @ VGS= 1.5V|350mA|



## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- General Purpose Interfacing Switch 

- Power Management Functions 

## **Features and Benefits** 

   - Low On-Resistance 

   - Very Low Gate Threshold Voltage, 1.0V Max 

   - Low Input Capacitance 

   - Fast Switching Speed 

   - Ultra-Small Surface Mount Package 1mm x 0.6mm 

   - Low Package Profile, 0.5mm Maximum Package Height 

   - ESD Protected Gate 

   - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

      - 

      - **https://www.diodes.com/products/automotive/automotive products/.** 

   - **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/** 

- Analog Switch 

## **Mechanical Data** 

- Case: X1-DFN1006-3 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 O **e4** 

- Weight: 0.001 grams (Approximate) 

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S<br>D<br>G<br>ESD PROTECTED xlee ~ s Gate Protection Ss<br>Top View<br>Bottom View  Pin Configuration  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)Note 4))|**Ordering Informationg Information Information** (Note 4)Note 4))|**Ordering Informationg Information Information** (Note 4)Note 4))|**Ordering Informationg Information Information** (Note 4)Note 4))|**Ordering Informationg Information Information** (Note 4)Note 4))|**Ordering Informationg Information Information** (Note 4)Note 4))|
|---|---|---|---|---|---|
|||||||
|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Tape Pitch(mm)**|**Quantity per Reel**|
|DMN21D2UFB-7|NN|7|8|4|3,000|
|DMN21D2UFB-7B|NN|7|8|2|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

**NN** 

NN = Product Type Marking Code 

Top View Bar Denotes Gate and Source Side 

1 of 6 **www.diodes.com** 

DMN21D2UFB Document number: DS35564 Rev. 6 - 2 

January 2020 © Diodes Incorporated 

**DMN21D2UFB** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**<br>Drain-Source Voltage<br>Gate-Source Voltage<br>Continuous Drain Current (Note 6) VGS= 4.5V<br>Steady<br>State<br>TA= +25C<br>TA= +70C<br>t<5s<br>TA= +25C<br>TA= +70C<br>Maximum Continuous BodyDiode Forward Current(Note 6)<br>Pulsed Drain Current(Note 7)|||**Symbol**|**Value**|**Unit**|
||||VDSS|20|V|
||||VGSS|±12|V|
||Steady<br>State|TA= +25C<br>TA= +70C|ID|760<br>610|mA|
||t<5s|TA= +25C<br>TA= +70C|ID|850<br>700|mA|
||||IS|0.8|A|
||||IDM|1.0|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|---|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.38|W|
||TA= +70°C||0.25||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RJA|325|°C/W|
||t<5s||244||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|0.9|W|
||TA= +70°C||0.57||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RJA|141|°C/W|
||t<5s||106||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|20|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current@Tc= +25°C|= +25°C<br>IDSS|—|—|100|nA|VDS= 20V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±1|μA|VGS= ±10V,VDS= 0V|
|**ON CHARACTERISTICS(Note 8) **|||||||
|Gate Threshold Voltage|VGS(TH)<br>~~«EE~~|0.4<br>~~«EE~~|—<br>~~«EE~~|1.0<br>~~«EE~~|V<br>~~«LE~~|VDS= VGS,ID= 250μA<br>~~«LE~~|
|Static Drain-Source On-Resistance<br>~~__—d|~~|RDS(ON)<br>~~__—d|~~<br>~~«EE~~|—<br>~~__—d|~~<br>~~«EE~~|0.6<br>~~__—d|~~<br>~~«EE~~|0.99<br>~~__—d|~~<br>~~«EE~~|<br>~~__—d|~~<br>~~«LE~~|VGS= 4.5V,ID= 100mA<br>~~__—d|~~<br>~~«LE~~|
|||—<br>~~__—d|~~<br>~~«EE~~|0.7<br>~~__—d|~~<br>~~«EE~~|1.2<br>~~__—d|~~<br>~~«EE~~||VGS= 2.5V,ID= 50mA<br>~~__—d|~~<br>~~«LE~~|
|||—<br>~~__—d|~~<br>~~«EE~~|0.9<br>~~__—d|~~<br>~~«EE~~|2.4<br>~~__—d|~~<br>~~«EE~~||VGS= 1.8V,ID= 20mA<br>~~__—d|~~<br>~~«LE~~|
|||—<br>~~__—d|~~<br>~~«EE~~|1.2<br>~~__—d|~~<br>~~«EE~~|3.0<br>~~__—d|~~<br>~~«EE~~||VGS= 1.5V,ID= 10mA<br>~~__—d|~~<br>~~«LE~~|
|Forward Transfer Admittance<br>~~__—d|~~||Yfs|<br>~~__—d|~~<br>~~«EE~~|180<br>~~__—d|~~<br>~~«EE~~|—<br>~~__—d|~~<br>~~«EE~~|—<br>~~__—d|~~<br>~~«EE~~|ms<br>~~__—d|~~<br>~~«LE~~|VDS= 10V,ID= 400mA<br>~~__—d|~~<br>~~«LE~~|
|Diode Forward Voltage|VSD<br>~~«EE~~|—<br>~~«EE~~|0.6<br>~~«EE~~|1.0<br>~~«EE~~|V<br>~~«LE~~|VGS= 0V,IS= 150mA<br>~~«LE~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~«EE «LE~~<br>~~==~~|||||||
|Input Capacitance<br>~~==~~|Ciss<br>~~==~~|—<br>~~==~~|27.6<br>~~==~~|—<br>~~==~~|pF<br>~~==~~|VDS= 16V, VGS= 0V,<br>f = 1.0MHz<br>~~==~~|
|Output Capacitance<br>~~==~~|Coss<br>~~==~~|—<br>~~==~~|4.0<br>~~==~~|—<br>~~==~~|pF<br>~~==~~||
|Reverse Transfer Capacitance<br>~~==~~|Crss<br>~~==~~|—<br>~~==~~|2.8<br>~~==~~|—<br>~~==~~|pF<br>~~==~~||
|Total Gate Charge,VGS= 4.5V<br>~~==~~|Qg<br>~~==~~|—<br>~~==~~|0.41<br>~~==~~|—<br>~~==~~|nC<br>~~==~~|VDS= 10V, ID= 250mA<br>~~==~~<br>~~eee~~|
|Total Gate Charge,VGS= 10V|Qg|—|0.93|—|nC||
|Gate-Source Charge|Qgs|—|0.06|—|nC||
|Gate-Drain Charge<br>~~SSS~~|Qgd|—|0.06|—<br>~~eee~~|nC<br>~~eee~~||
|Turn-On DelayTime<br>~~SSS~~|tD(ON)|—|3.5|—<br>~~eee~~|ns<br>~~eee~~|VDD= 10V, VGS= 4.5V,<br>RL= 47Ω, Rg= 10Ω,<br>ID= 200mA<br>~~eee~~|
|Turn-On Rise Time<br>~~SSS~~|tr|—|4.2|—<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off DelayTime<br>~~SSS~~|tD(OFF)|—|19.6|—<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off Fall Time<br>~~SSS~~|tf|—|9.8|—<br>~~eee~~|ns<br>~~eee~~||



- Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 

   7. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 

   8. Short duration pulse test used to minimize self-heating effect. 

   9. Guaranteed by design. Not subject to product testing. 

2 of 6 **www.diodes.com** 

DMN21D2UFB Document number: DS35564 Rev. 6 - 2 

January 2020 © Diodes Incorporated 

**DMN21D2UFB** 

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1.0 1.0<br>VGS = 8.0V VGS = 4.5V<br>VGS = 2.5V<br>VGS = 2.0V<br>0.8 0.8 VDS = 5.0V<br>0.6 [i VGS = 1.8V 0.6 Gf<br>[YZ _ ff<br>0.4 0.4<br>Werf<br>VGS = 1.5V TTA A= 150°C  = 150癈<br>TTAA  = 1 2525°C 癈<br>0.2 0.2<br>VV —f TTAA  = 85= 85°C 癈<br>TTAA  = 25= 25°C 癈<br>0 VGS = 1.2V 0 TTAA  = -55= -55°C 癈<br>0 0.5 1.0 1.5 2.0 0 1 2 3<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristics<br>1.6 1.2<br>1.4<br>1.0<br>1.2 V GS = 1.5V<br>0.8 Rae<br>1.0<br>VGS = 1.8V<br>0.8 0.6 BNE<br>0.6 VGS = 2.5V<br>0.4 op) pr I D = 100mA _LLLL<br>0.4 V GS = 4.5V<br>0.2 FCCPT<br>0.2<br>0 aa 0 AEELLE E EEEEELE<br>0 0.2 0.4 0.6 0.8 1.0 1 2 3 4 5 6 7 8 9 10<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>1.0 1.6<br>VGS = 4.5V<br>0.8 “TFT TTAA = 150 = 150°C 癈 1.4 TILL<br>TTAA  = 125= 125癈°C IVDGS= 250mA  2.5= V<br>0.6 TTA A= = 85 85°癈C  1.2<br>———— TTA A= 25°C  = 25癈 nrrhy VGS = 4.5V An<br>ID = 500mA<br>0.4 1.0<br>T A A = -5= -5 5 °C 癈<br>0.2 SO 0.8<br>0 oe 0.6 ZO<br>0 0.2 0.4 0.6 0.8 1.0 ee -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 Typical On-Resistance vs.  Fig. 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>D<br>, DRAIN CURRENT (A)<br> I<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>, DRAIN CURRENT (A)<br>D<br> I<br>**----- End of picture text -----**<br>


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1.0 1.4<br>1.3<br>0.8 TTT] V GS   2.5= V LEa 1.2 PPTSHEE Try<br>ID = 250mA<br>1.1<br>0.6 nEpearnd 1.0 TEE<br>Pape Saco<br>0.9 ID = 1mA<br>VGS = 4.5V<br>0.4 PET)ec a ID = 500mA 0.8 RSSSS<br>0.7 IID D= 250= 250礎A<br>0.2 PPE 0.6 ee EE<br>0.5<br>0 TTT TTT Ty 0 T EEPEEE—~<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 7 On-Resistance Variation with Temperature Fig. 8 Gate Threshold Variation vs. Ambient TemperatureJunction Temperature<br>1.0 100<br>0.9<br>0.8<br>0.7 ees ie SEE Ciss<br>0.6 ee P|PP<br>0.5 e/aae 10 TTTVeen eeeeeeTTT<br>0.4 TTAA = 150°C = 150癈<br>| fff See<br>0.3 AT TTAA = 125= 125°C 癈 Ne<br>TTAA = 85= 85°C 癈 Coss<br>0.2<br>A TATA = 25= 25°C 癈 2. f = 1MHz —=Seeen Crss<br>0.1 TT AA  = -55= -55°C 癈<br>0 Sop’eee 1 semen<br>0 0.2 0.4 0.6 ZZ 0.8 1.0 1.2 0 2 4 6 8 10 12 14 16 18 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Diode Forward Voltage vs. Current Fig. 10 Typical Junction Capacitance<br>10 10<br>8 VIDDS  250m= = 10VA 1 RLimitedDS(on)<br>6 DC<br>0.1 PW = 10s PW = 1s<br>PW = 100ms<br>4 CT YT fy Some P W NSS = 10ms<br>PW = 1ms<br>PW =  100 祍s<br>0.01 TTJ(MAX) J(max) = 150= 150癈°C<br>2 T A A = =  25 °C 癈<br>VGS = 8V<br>Single Pulse<br>0 0.001 DUT on 1 * MRP Board RT<br>0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 ll 100<br>Qg [, TOTAL GATE CHARGE ] (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Gate Charge Fig. 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, GATE SOURCE VOLTAGE (V)<br>GS<br>VGS<br> GATE THRESHOLD VOLTAGE (V)<br>V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMN21D2UFB** 

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1<br>D = 0.9<br>D = 0.7<br>S D = 0.5 S ee<br>a D = 0.3 ects nt ne<br>0.1 AT TIT eI ETT TECTT<br>D = 0.1<br>D = 0.05<br>SSAE<br>D = 0.02<br>TTT Tt<br>0.01 AT D = 0.01 a TTI TTT TEIN TIT<br>tTeerE D = 0.005 OYTTTTTT ETM ETI, TTT RRRR θJAθJA    JA JA (t) = 315(t) = r(t)  = 315= r(t)  ℃ 癈*/W  R*/W R θJA JA CUTLAL<br>D = Single Pulse Duty Cycle, D = t1 / t2 Duty Cycle, D = t1/ t2<br>0.001 vir LAIN LIME EINE TEE UI ull<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 13 Transient Thermal Resistance<br>e Outline Dimensions<br>for the latest version.<br>X1-DFN1006-3<br>:<br>A<br>| A1<br>X1-DFN1006-3<br>—— — Seating Plane fF<br>Dim  Min  Max Typ<br>p g D t | A  [{ | 0.47  [ | 0.53 || 0.50 |<br>— Pin #1 ID b es A1  0 ee .00 0.05 0.03<br>b  0.10 0.20 0.15<br>b2  0.45 0.55 0.50<br>D  0.95 1.075 1.00<br>7 eeiF esSEE E  0.55 0.675 0.60<br>E b2 e e  -  -  0.35<br>L1  0.20 0.30 0.25<br>| —} 4 |-—|—|—|ee L2  [|ee 0.20 [| 0.30 | 0.2 | 5<br>| L3  {| -  [| -  [| 0.40<br>~ | lo z (| z  [ 0.02  [ 0.08 | 0.05 |<br>All Dimensions in mm<br>L2 eeee L3 ee L1 |<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X1-DFN1006-3** 

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Y + es C<br>Y1<br>ET |<br>G2<br>EI -L<br>ee X G1<br>X1<br>**----- End of picture text -----**<br>


|**Dimensions**<br>**C**<br>**G1 **<br>**G2**<br>**X**<br>**X1**<br>**Y**<br>**Y1**|**Value(in mm)**<br>0.70<br>0.30<br>0.20<br>0.40<br>1.10<br>0.25<br>0.70|
|---|---|



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DMN21D2UFB Document number: DS35564 Rev. 6 - 2 

January 2020 © Diodes Incorporated 

**DMN21D2UFB** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMN21D2UFB Document number: DS35564 Rev. 6 - 2 

January 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN21D2UFB-7B/power-mosfet-n-channel-20-v-760-ma-06-ohm-x1)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn21d2ufb-7b/mosfet-n-ch-20v-0-76a-x1-dfn1006/dp/3943553)
---

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