# Power MOSFET, N Channel, 20 V, 4 A, 0.032 ohm, SOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:3943552/)

**URL**: https://novapart.co/products/DMN2100UDM-7/power-mosfet-n-channel-20-v-4-a-0032-ohm-sot-26
**SKU**: DMN2100UDM-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1100
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-26 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.032ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943552/)

**DMN2100UDM** 

**N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = 25°C**|
|---|---|---|
|20V|55mΩ @VGS= 4.5V|4.0A|
||70mΩ@VGS= 2.5V|3.5A|
||90mΩ@VGS= 1.8V|3.1A|
||130mΩ@VGS= 1.5V|2.5A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- ESD Protected Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- General Purpose Interfacing Switch 

- Power Management Functions 

## **Mechanical Data** 

- Case: SOT26 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.015 grams (approximate) 

ESD PROTECTED 

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SOT26<br>Top View<br>**----- End of picture text -----**<br>


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D D S<br>D D G<br>Top View<br>Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN2100UDM-7|SOT26|3000/Tape &Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com. . 

## **Marking Information** 

2N1 = Marking Code YM = Date Code Marking **2N1** Y = Year (ex: U = 2007) M = Month (ex: 9 = September) Date Code Key **Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 Code** U V W X Y Z A B C D E ~~___~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 7 8 ~~ee~~ 9 O ~~ee~~ N D DMN2100UDM 1 of 6 May 2012 Document number: DS31186 Rev. 5 - 2 **www.diodes.com** © Diodes Incorporated 

May 2012 © Diodes Incorporated 

**DMN2100UDM** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol **|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±8|V|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= 25°C<br>TA= 70°C|ID|4.0<br>3.1|A|
||t<10s|TA= 25°C<br>TA= 70°C|ID|4.5<br>3.5|A|
|Pulsed Drain Current(10µspulse,dutycycle = 1%)|||IDM|13|A|
|Maximum BodyDiode Continuous Current|||IS|1.5|A|



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= 25°C|PD|1|W|
||TA= 70°C||0.6||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady state|RθJA|127|°C/W|
||t<10s||91||
|Total Power Dissipation (Note 6)|TA= 25°C|PD|1.5|W|
||TA= 70°C||0.9||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady state|RθJA|85|°C/W|
||t<10s||63||
|Thermal Resistance,Junction to Case(Note 6)||RθJC|3.1||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **|
|**OFFCHARACTERISTICS (Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|20|⎯|⎯|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current|IDSS|⎯|⎯|1|μA|VDS= 20V,VGS= 0V|
|Gate-Source Leakage|IGSS|⎯|⎯|±1|μA|VGS=±8V,VDS= 0V|
|**ON CHARACTERISTICS (Note 7)**|||||||
|Gate Threshold Voltage|VGS(th)|0.6|⎯|1.0|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance|RDS (ON)|⎯|32|55|mΩ|VGS= 4.5V,ID= 6A|
|||⎯|43|70||VGS= 2.5V,ID= 4.0A|
|||⎯|56|90||VGS= 1.8V,ID= 1.5A|
|||⎯|80|130||VGS= 1.5V,ID= 1.0A|
|Forward Transfer Admittance||Yfs||⎯|8|⎯|S|VDS=10V,ID= 6A|
|Diode Forward Voltage<br>~~—————~~|VSD|⎯|0.7|1.1<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 2A<br>~~eee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~—————~~<br>~~eee~~|||||||
|Input Capacitance<br>~~—————~~|Ciss|⎯|555|⎯<br>~~ee~~|pF<br>~~ee~~|VDS= 10V, VGS= 0V<br>f = 1.0MHz<br>~~eee~~|
|Output Capacitance<br>~~—————~~|Coss|⎯|112|⎯<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~—————~~|Crss|⎯|84|⎯<br>~~ee~~|pF<br>~~ee~~||
|Total Gate Charge<br>~~—————~~|Qg|⎯|8.8|⎯<br>~~ee~~|nC<br>~~ee~~|VDS= 10V, VGS= 4.5V,<br>ID= 6.5A<br>~~eee~~<br>~~ee~~|
|Gate-Source Charge<br>~~—————~~<br>~~i~~|Qgs|⎯|1.4|⎯<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~i~~<br>~~————~~|Qgd|⎯|3|⎯<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~————~~|tD(on)|⎯|53|⎯<br>~~ee~~|ns<br>~~ee~~|VDS= 10V, ID= 1.0A<br>VGS= 4.5V, RG= 6Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tr|⎯|78|⎯<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~————~~|tD(off)|⎯|561|⎯<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~————~~|tf|⎯|234|⎯<br>~~ee~~|ns<br>~~ee~~||



Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 

7. Short duration pulse test used to minimize self-heating effect 

8. Guaranteed by design. Not subject to production testing 

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**DMN2100UDM** 

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10 15<br>VGS = 8.0V<br>8 VGS = 2.5V 12 VDS = 5.0V<br>ff VGS = 1.8V of<br>6 2a| oe V GS = 1.5V 9 ae<br>4 ase| (Ae 6 _ T A  = 150°C f]{<br>TA = 125°C<br>2 fo 3 T A  = 85°C<br>TA = 25°C<br>VGS = 1.2V TA = -55°C<br>0 ———_ 0 _<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristics<br>0.14 0.08<br>0.12 0.07 V GS = 4.5V<br>ae ee ee<br>0.06<br>0.10<br>ie Se<br>0.05<br>0.08 VGS = 1.5V<br>0.04 T A  = 125°C T A  = 150°C<br>Pr EE<br>0.06<br>i 0.03<br>TA = 85°C<br>0.04 VGS = 1.8V TA = 25°C<br>0.02<br>oe ES T UE A = -55°C<br>0.02 SS V GS = 4.5V VGS = 2.5V 0.01 TT<br>0 0<br>0 PPT 3 6 9 12 15 0 a 1 2 3 4 5<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.8 0.08<br>0.07<br>1.6<br>VGS  2.5= V 0.06<br>He ID = 5A CEE<br>1.4<br>0.05<br>VGS  2= .5V<br>1.2 tit A 0.04 EEECECE I D = 5A<br>VGS = 4.5V<br>ee ID = 10A SaEEaeEP<br>0.03<br>1.0<br>Baad ae<br>0.02 VGS  4.5= V<br>ID = 10A<br>0.8<br>AO PTE, Fr<br>0.01<br>ETT) 6 BEEP EE<br>0.6 0<br>-50 PPE -25 0 25 PEEL 50 75 100 125 150 -50 ~E -25 0 ECE 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I  I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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20<br>15<br>TAA = 25°C<br>10<br>5<br>0 PTT TAT<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)SD, SOURCE-DRAIN VOLTAGE (V), SOURCE-DRAIN VOLTAGE (V)<br>Fig. 8 Diode Forward Voltage vs. Current<br>, SOURCE CURRENT (A)<br>ISS<br>**----- End of picture text -----**<br>


**==> picture [440 x 645] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.4 20<br>1.2<br>15<br>1.0<br>0.8 TAA = 25°C<br>10<br>0.6 tea ID = 250µA >~<br>0.4<br>5<br>0.2<br>0 ptt ttt tt 0 PTT<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8<br>TJ, JUNCTION TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)SD, SOURCE-DRAIN VOLTAGE (V), SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1,000 [OTpo<br>po<br>poof<br>a a a De ee ee ee ee<br>| of | }| f fF f ft ft ft<br>NI<br>Ciss<br>See<br>100 re<br>| SS<br>A C oss<br>|[AffSf}fp| f {| f | |<br>ee ee<br>Crss<br>f = 1MHz<br>10<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Junction Capacitance<br>1 D = 0.9<br>See D = 0.7 eR<br>D = 0.5<br>bo CeTPP eTclETO|<br>FHT D = 0.3 PLR TTT TTT ET<br>0.1 TNE L<br>eae D = 0.1 Tee TT<br>ieee cia eee ace’ let se el<br>Pet At<br>by D = 0.05 TILA ETT<br>HL ASe<br>CO<br>D = 0.02<br>0.01 an V/<br>D = 0.01<br>Fo EE829 0<br>PatHe D = 0.005  CITTCEE EE HHHEHE RθJA(t) = r(t) * RθJA [TT<br>He I R θJA  = 88°C/W LTH<br>Duty Cycle, D = t1/ t2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 10 Transient Thermal Resistance<br>, SOURCE CURRENT (A)<br>ISS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN2100UDM** 

## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
A<br>SOT26<br>Dim Min  Max Typ<br>B C A  0.35 0.50 0.38<br>B  1.50 1.70 1.60<br>C 2.70 3.00 2.80<br>om ——— D  ⎯ ⎯ 0.95<br>ie === H  2.90 3.10 3.00<br>H<br>J 0.013 0.10 0.05<br>K  1.00 1.30 1.10<br>K M L  0.35 0.55 0.40<br>M  0.10 0.20 0.15<br>J α  0°  8°  ⎯<br>D L<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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**----- Start of picture text -----**<br>
C2 C2<br>ae<br>h G oc C1<br>Z<br>Y<br>Poot<br>Ie X ><br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Z**|3.20|
|**G**|1.60|
|**X**|0.55|
|**Y**|0.80|
|**C1**|2.40|
|**C2 **|0.95|



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DMN2100UDM Document number: DS31186 Rev. 5 - 2 

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**DMN2100UDM** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2012, Diodes Incorporated 

**www.diodes.com** 

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---

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