# Power MOSFET, N Channel, 20 V, 2.8 A, 0.04 ohm, SOT-363, Surface Mount

![Product image](https://novapart.co/image/farnell:3943551/)

**URL**: https://novapart.co/products/DMN2075UDW-7/power-mosfet-n-channel-20-v-28-a-004-ohm-sot-363
**SKU**: DMN2075UDW-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0860
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 500mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-363 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.8A |
| Drain Source On State Resistance | 0.04ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943551/)

**DMN2075UDW** eo **N-CHANNEL ENHANCEMENT MODE MOSFET** dT 

## **Product Summary** 

## **Benefit and Features** 

- Low On-Resistance 

|**V(BR)DSS**|**RDS(on) max**|**ID**<br>TA= 25°C|
|---|---|---|
|20V|48mΩ@ VGS= 4.5V|2.8A|
||59mΩ@ VGS= 2.5V|2.6A|
||||



## **Description and Applications** 

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Lead Free By Design/RoHS Compliant (Note 1)** 

- **"Green" Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

   - Case: SOT363 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC-DC Converters 

- Power management functions 

- Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe. Solderable per MIL-STD-202, Method 208 

- Terminals Connections: See Diagram Below 

- Weight: 0.006 grams (approximate) 

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SOT363<br>**----- End of picture text -----**<br>


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Top View<br>**----- End of picture text -----**<br>


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Top View<br>Internal Schematic<br>D D S<br>D D G<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Ordering Informationg Information Information** (Note 3)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN2075UDW-7|SOT363|3000/Tape &Reel|



Notes: 1. No purposefully added lead. 

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com 

3. For packaging details, go to our website at http://www.diodes.com 

## **Marking Information** 

G22 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 

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G22 YM = Date Code Marking<br>Y = Year (ex: Y = 2011)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2011 2012 2013 2014 2015 2016 2017<br>Code Y  Z  A  B  C D  E<br>es es es es es<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>tt Code 1  2  3 4  5 6 7  8 9 O N  D<br>YM<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

DMN2075UDW Document number: DS35542 Rev. 1 - 2 

September 2011 © Diodes Incorporated 

**DMN2075UDW** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol **|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±8V|V|
|Continuous Drain Current (Note 5) VGS= 4.5V|Steady<br>State|TA= 25°C<br>TA= 70°C|ID|2.8<br>2.2|A|
||t<5s|TA= 25°C<br>TA= 70°C|ID|3.1<br>2.5|A|
|Continuous Drain Current (Note 5) VGS= 2.5V|Steady<br>State|TA= 25°C<br>TA= 70°C|ID|2.6<br>2.1|A|
||t<5s|TA= 25°C<br>TA= 70°C|ID|2.8<br>2.2|A|
|Pulsed Drain Current(10μspulse,Dutycycle = 1%)|||IDM|20|A|
|Maximum Continuous BodyDiode Current|||IS|1.0|A|



## **Thermal Characteristics** 

|**Characteristic**|**Characteristic**|**Symbol**|**Value**|**Units**|
|---|---|---|---|---|
|Total Power Dissipation(Note 4)||PD|0.5|W|
|Thermal Resistance, Junction to Ambient (Note 4)|Steady state|RθJA|257|°C/W|
||t<5s||213|°C/W|
|Total Power Dissipation(Note 5)||PD|0.58|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady state|RθJA|221|°C/W|
||t<5s||183|°C/W|
|Thermal Resistance,Junction to Case(Note 5)||RθJC|65|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic **<br>~~———~~|**Symbol **|**Min**|**Typ **|**Max **|**Unit **|**Test Condition **|
|**OFFCHARACTERISTICS (Note 5) **<br>~~———~~<br>~~EE~~|||||||
|Drain-Source Breakdown Voltage<br>~~———~~<br>~~EE~~|BVDSS<br>~~EE~~|20<br>~~EE~~|-<br>~~EE~~|-<br>~~EE~~|V<br>~~EE~~|VGS= 0V,ID= 250μA<br>~~EE~~|
|Zero Gate Voltage Drain Current TJ= 25°C<br>~~———~~<br>~~EE~~|IDSS<br>~~EE~~|-<br>~~EE~~|-<br>~~EE~~|1.0<br>~~EE~~|μA<br>~~EE~~|VDS= 20V,VGS= 0V<br>~~EE~~|
|Gate-Source Leakage<br>~~———~~<br>~~EE~~|IGSS<br>~~EE~~|-<br>~~EE~~|-<br>~~EE~~|±100<br>~~EE~~|nA<br>~~EE~~|VGS= ±8V,VDS= 0V<br>~~EE~~|
|**ON CHARACTERISTICS(Note 5) **<br>~~———~~|||||||
|Gate Threshold Voltage|VGS(th)|0.4|-|1.0|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance<br>~~|~~|RDS (ON)<br>|-<br>~~EE~~|40<br>~~EE~~|48<br>~~EE~~|mΩ<br>~~EE~~|VGS= 4.5V,ID= 3A<br>~~EE~~|
|||-<br>~~EE~~|45<br>~~EE~~|59<br>~~EE~~||VGS= 2.5V,ID= 2A<br>~~EE~~|
|||-<br>~~EE~~|51<br>~~EE~~|70<br>~~EE~~||VGS= 1.8V,ID= 1A<br>~~EE~~|
|||-<br>~~EE~~|68<br>~~EE~~|100<br>~~EE~~||VGS= 1.5V,ID= 1A<br>~~EE~~|
|Forward Transfer Admittance<br>~~| ~~||Yfs|<br>|-<br> ~~EE~~|13<br>~~EE~~|-<br>~~EE~~|S<br>~~EE~~|VDS= 5V,ID= 3A<br>~~EE~~|
|Diode Forward Voltage|VSD|-|0.75|1.0|V|VGS= 0V,IS= 1A|
|**DYNAMIC CHARACTERISTICS (Note 6)**|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|-<br>~~———~~|594.3<br>~~———~~|-<br>~~———~~|pF<br>~~———~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~<br>~~eee~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|-<br>~~———~~|64.5<br>~~———~~|-<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~<br>~~—~~|Crss<br>~~———~~|-<br>~~———~~|57.7<br>~~———~~|-<br>~~———~~<br>~~ee~~|pF<br>~~———~~<br>~~ee~~||
|Gate Resistance<br>~~———~~<br>~~—~~|Rg<br>~~———~~|-<br>~~———~~|1.5<br>~~———~~|-<br>~~———~~<br>~~ee~~|Ω<br>~~———~~<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~eee~~|
|Total Gate Charge<br>~~—~~|Qg|-|7.0|-<br>~~ee~~|nC<br>~~ee~~|VGS= 4.5V, VDS= 10V,<br>ID= 3.6A<br>~~eee~~<br>~~ee~~|
|Gate-Source Charge<br>~~—~~|Qgs|-|0.9|-<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~—~~<br>~~—————~~|Qgd|-|1.4|-<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~—~~<br>~~—————~~|tD(on)|-|7.4|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDD= 10V, VGS= 4.5V,<br>RL= 2.78Ω, RG= 1.0Ω<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~—~~<br>~~—————~~|tr|-|9.8|-<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~—————~~|tD(off)|-|28.1|-<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—————~~|tf|-|6.7|-<br>~~ee~~|ns<br>~~ee~~||



- Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

   5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 

   6. Short duration pulse test used to minimize self-heating effect 

   7. Guaranteed by design. Not subject to production testing. 

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**DMN2075UDW** 

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10 HL 5<br>VGS = 8.0V |<br>VGS = 3.0V VDS = 5.0V<br>8 VGS = 2.5V 4<br>VGS = 2.0V<br>fo VGS = 1.8V<br>6 3<br>VGS = 1.5V<br>4 ,| a an 2 ie TA = 150°C<br>TA = 125°C TA = 85°C<br>2 1 TA = 25 ° C<br>TA = -55°C<br>VGS = 1.2V<br>0 fo| 0 ji<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0<br>VDS, DRAIN -SOURCE VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2  Typical Transfer Characteristics<br>0.100.09 tetey ty yt 0.080.07 V GS = 4.5V<br>PO<br>0.08<br>0.06<br>TA = 150°C<br>0.07 ttt tt =——— TA = 125°C<br>0.05<br>0.06 TA = 85°C<br>ean —<br>0.04<br>0.05 Se ES TA = 25°C<br>0.03<br>0.04 =. fy TA = -55°C<br>0.02<br>0.03<br>0.020.01 FP)CCEA 0.010 =yr<br>0 2 4 6 8 10 0 1 2 3 4 5<br>ID, DRAIN SOURCE CURRENT ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.8 0.08 CTT<br>0.07<br>1.6<br>0.06 VID GS   1=   2=A .5V<br>1.4<br>0.05<br>1.2 0.04 VIDGS  5= = 4.5VA<br>0.03<br>1.0 aoeeeaee ee<br>Coat) 0.02 pee<br>0.8<br>rt 0.01 eee<br>0.6 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>chit TJ, JUNCTION TEMPERATURE ( TEE) °C) |)  perry TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>)Ω )Ω<br>,DRAIN-SOURCE ON-RESISTANCE( , DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (Normalized) , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMN2075UDW Document number: DS35542 Rev. 1 - 2 

September 2011 © Diodes Incorporated 

**DMN2075UDW** | 

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1.4 5<br>1.2<br>4<br>1.0<br>3<br>0.8 —__€_-:_ a Ty= 25°C<br>0.6 Ske 2 |<br>0.4 eS | LAL<br>1 yyTAL [<br>Fee Pe TI<br>0.2<br>0 0<br>-50 Pet; -25 0 25  EEE 50 75 100 125 150 0 Epa 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1,000<br>——————— 10,000 SSSSS<br>—— ——<br>C iss T A  = 150°C<br>asSe SSSor<br>a eee TA = 125°C<br>SEE === ===<br>100<br>oe<br>al C oss EEE<br>SSS === T A  = 85°C ee<br>————— Crss ee ee TA = 25°C<br>SEE 7 oe<br>f = 1MHz | —————— T A  = -55°C<br>-—_| ee<br>10 7<br>0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE(V)<br>Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>100<br>a GeOeOeOO<br>RDS(on) P W  = 10µs<br>10 Limited etalNt eneNeill<br>PWN PINT NT TTRTT<br>CNRS INT<br>1 DC<br>PW = 10s<br>—a P W  = 1s I Ne aS a<br>P W = 100ms<br>a PW = 10ms ‘NGGs a<br>0.1 RYN<br>PW = 1ms<br>Tuma == 180°C ee  FILT PW = 100µs DINAN)SS<br>0.01 eS to|<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE(V) IS<br>GS(TH)<br>V<br>, LEAKAGE CURRENT (nA)<br>, JUNCTION CAPACITANCE (pF)CT IDSS<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMN2075UDW** 

**==> picture [396 x 429] intentionally omitted <==**

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1<br>D = 0.7<br>ET D = 0.5 oS<br>HARTA D = 0.3<br>0.1 D = 0.9<br>D = 0.1<br>fi D = 0.05 a<br>HHI D = 0.02<br>0.01<br>Ba D = 0.01  027201<br>D = 0.005 R θJA (t) = r(t) * R θJA<br>RθJA = 225 ° C/W<br>LTTE | ETE ET Duty Cycle, D = t1/ t2 CT<br>Single Pulse<br>0.001 ST cull {CEILI EEE CHIEN TINE TH a i Till<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 12  Transient Thermal Resistance<br>e Outline Dimensions<br>+e A<br>SOT363<br>Dim  Min  Max<br>A  0.10 0.30<br>B C<br>B  1.15 1.35<br>C  2.00  2.20<br>Leal D  0.65 Typ<br>F  0.40 0.45<br>}}—— H ——>| . H  1.80 2.20<br>H J 0 0.10<br>K M K  0.90 1.00<br>L  0.25  0.40<br>OOD J P e, M  0.10  0.22<br>D F L<br>α 0°  8°<br>All Dimensions in mm<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

## **Suggested Pad Layout** 

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C2 C2<br>k k ae 5<br>Dimensions Value (in mm)<br>Z  2.5<br>G 1.3<br>Z Tt G qT C1 X  0.42<br>Y  0.6<br>C1  1.9<br>Y C2  0.65<br>Pooot<br>k X ><br>**----- End of picture text -----**<br>


5 of 6 **www.diodes.com** 

DMN2075UDW Document number: DS35542 Rev. 1 - 2 

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**DMN2075UDW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the        failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2011, Diodes Incorporated 

**www.diodes.com** 

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DMN2075UDW Document number: DS35542 Rev. 1 - 2 

September 2011 © Diodes Incorporated 



## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/dmn2075udw-7/mosfet-n-ch-20v-2-8a-sot-363/dp/3943551)
---

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