# Power MOSFET, N Channel, 20 V, 4.6 A, 0.035 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2709530RL/)

**URL**: https://novapart.co/products/DMN2058U-7/power-mosfet-n-channel-20-v-46-a-0035-ohm-sot-23
**SKU**: DMN2058U-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0900
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:600m

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 740mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.6A |
| Drain Source On State Resistance | 0.035ohm |
| Gate Source Threshold Voltage Max | 600mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709530RL/)

**DMN2058U** 

## **20V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

## **Features and Benefits** 

- Low On-Resistance 

|**BVDSS**|**RDS(ON) Max**|**ID Max**|
|---|---|---|
||35mΩ @ VGS= 10V|4.6A|
|20V|||
||40mΩ @ VGS= 4.5V|4.3A|



- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen- and Antimony-Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Battery Charging 

- Power Management Functions 

- DC-DC Converters 

- Portable Power Adaptors 

- Terminals: Finish—Matte Tin Annealed over Copper Lead-Frame. Solderable per MIL-STD-202, Method 208 

- Terminals Connections: See Diagram Below 

- Weight: 0.009 grams (Approximate) 

**D** D **G** ~ ~~&~~ **S** G S Top View Internal Schematic Top View **Ordering Information** (Note 4) **Part Number Case Packaging** DMN2058U-7 SOT23 3,000/Tape & Reel ~~——————~~ DMN2058U-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

58U = Product Type Marking Code YM = Date Code Marking Y or Y̅ = Year (ex: H = 2020)  = Year (ex: H = 2020) M or M= Month (ex: 9 = September) 

**==> picture [520 x 107] intentionally omitted <==**

**----- Start of picture text -----**<br>
58U Y or Y̅ = Year (ex: H = 2020)  = Year (ex: H = 2020)<br>M or M= Month (ex: 9 = September)<br>Date Code Key<br>Year 2016 ~ 2020 2021 2022 2023 2024  2025<br>a Code D  ~  H  I  J  K  L  M<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3 4  5 6 7  8 9 O N  D<br>-} —} —} —} +} —} | — }—__ +<br>YM<br>**----- End of picture text -----**<br>


1 of 7 **www.diodes.com** 

DMN2058U Document number: DS38468  Rev. 2 - 2 

September 2020 © Diodes Incorporated 

**DMN2058U** 

**Maximum Ratings** (@ TA = +25°C unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|4.6<br>3.7|A|
|Maximum BodyDiode Forward Current(Note 6)|||IS|1.2|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|24|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 5)||PD|0.74|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|172|°C/W|
|Power Dissipation(Note 6)||PD|1.13|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|111|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@ TA = +25°C unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 7)|||||||
|Drain-Source Breakdown Voltage|BVDSS|20|||V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|||1|µA|VDS= 20V,VGS= 0V|
|Gate-Source Leakage|IGSS|||±100|nA|VGS=±12V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 7)|||||||
|Gate Threshold Voltage|VGS(TH)|0.4|0.6|1.2|V|VDS= VGS,ID= 250µA|
|Static Drain-Source On-Resistance<br>~~===~~|RDS(ON)<br>~~===~~|<br>~~===~~|27<br>~~===~~|35<br>~~===~~|mΩ<br>~~===~~|VGS= 10V,ID= 6.0A<br>~~===~~|
|||<br>~~===~~|30<br>~~===~~|40<br>~~===~~||VGS= 4.5V,ID= 5.0A<br>~~===~~|
|||<br>~~===~~|37<br>~~===~~|60<br>~~===~~||VGS= 2.5V,ID= 4.0A<br>~~===~~|
|||<br>~~===~~|49<br>~~===~~|91<br>~~===~~||VGS= 1.8V,ID= 2.0A<br>~~===~~|
|Diode Forward Voltage<br>~~===~~|VSD<br>~~===~~|<br>~~===~~|0.7<br>~~===~~|1.2<br>~~===~~|V<br>~~===~~|VGS= 0V,IS= 1A<br>~~===~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)|||||||
|Input Capacitance<br>~~——~~|CISS<br>~~——~~|<br>~~——~~|281<br>~~——~~|<br>~~——~~|pF<br>~~——~~|VDS= 10V, VGS= 0V<br>f = 1.0MHz<br>~~——~~|
|Output Capacitance<br>~~——~~|COSS<br>~~——~~|<br>~~——~~|50<br>~~——~~|<br>~~——~~|||
|Reverse Transfer Capacitance<br>~~——~~|CRSS<br>~~——~~|<br>~~——~~|39<br>~~——~~|<br>~~——~~|||
|Gate Resistance<br>~~——~~<br>~~———~~|RG<br>~~——~~|<br>~~——~~|3.1<br>~~——~~|<br>~~——~~<br>~~e~~|Ω<br>~~——~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~——~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~|QG||3.6|<br>~~e~~|nC<br>~~e~~<br>~~et |~~|VDS= 10V, ID= 6.0A<br>~~ee~~<br>~~|~~|
|Total Gate Charge(VGS= 10V)<br>~~———~~|QG||7.7|<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|QGS||0.5|<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~<br>~~et~~|QGD<br>~~et~~|<br>~~et~~|0.9<br>~~et~~|<br>~~e~~<br>~~et~~|||
|Turn-On DelayTime<br>~~———~~<br>~~et~~|tD(ON)<br>~~et~~|<br>~~et~~|2.0<br>~~et~~|<br>~~e~~<br>~~et~~|ns<br>~~e~~<br>~~et |~~|VGS= 4.5V, VDD= 10V, RG= 6Ω,<br>ID= 6.0A<br>~~ee~~<br>~~|~~|
|Turn-On Rise Time<br>~~———~~<br>~~et~~|tR<br>~~et~~|<br>~~et~~|4.9<br>~~et~~|<br>~~e~~<br>~~et~~|||
|Turn-Off DelayTime<br>~~et~~|tD(OFF)<br>~~et~~|<br>~~et~~|9.9<br>~~et~~|<br>~~et~~|||
|Turn-Off Fall Time<br>~~et~~|tF<br>~~et~~|<br>~~et~~|3.3<br>~~et~~|<br>~~et~~|||
|BodyDiode Reverse RecoveryTime<br>~~et~~|tRR<br>~~et~~|<br>~~et~~|5.4<br>~~et~~|<br>~~et~~|ns<br>~~et |~~|IF= 6.0A,di/dt = 100A/μs<br>~~|~~|
|BodyDiode Reverse RecoveryCharge<br>~~et~~|QRR<br>~~et~~|<br>~~et~~|0.7<br>~~et~~|<br>~~et~~|nC<br>~~et |~~|IF= 6.0A,di/dt = 100A/μs<br>~~|~~|



6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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**DMN2058U** 

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**----- Start of picture text -----**<br>
20 VGS  = 10V VGS = 4.5V 10<br>18 KZ VGS = 4.0V _ 9 VDS = 5.0V |<br>VGS = 3.0V<br>16 | a V GS  = 2.5V V GS  = 2V 8 ee ee<br>1412 WF 76 ee jn<br>10 5<br>8 | VGS  = 1.5V es 4 T A  = 150°C  he TA = 25°C<br>6 po 3 ee TA = 125°C T A  = -55°C a<br>TA = 85°C<br>4 | >= 2 fo<br>VGS = 1.2V<br>2 Vo 1 n/a<br>VGS = 1V<br>0 [-——__ 0 0.5 1 1.5 2 2.5 3 00 a 0.5 Jaa 1 1.5 2 2.5<br>V DS, DRAIN-SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.1 PEPE 0. 1 LTT<br>0.09 FEE 0.09 CAPE<br>0.08 HEE 0.08 AEC<br>0.07 0.07<br>0.06 V GS  = 1.8V 0.06 ID = 6A<br>0.05 Cera 0.05 CAPER EEE<br>BaP 2eene8 VGS = 2.5V CA COE<br>0.04 0.04 I D  = 2A<br>VGS = 4.5V<br>0.03 =—S000n02=prey] 0.03 PREPPeEEtE<br>VGS = 10V<br>0.02 SS 0.02 | |  | |<br>0.01 FEE 0.01 S0000eeneee=<br>0 PEEP EEEPeer 0 SogeeeeeeeenEEE<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>0.06 2.5<br>VGS = 10V<br>0.05<br>it TA ttt  = 125°C TA = 150°C TT 2 TEE yy] VGS = 2.5V V GSID  = 1.5V  = 2A<br>0.04 ID = 4A<br>tf T tt A = 85°C 1.5 Try<br>0.03 T A  = 25°C VGS = 1.5V<br>are es VGS  = 4.5V ID = 2A<br>0.02 TA = -55°C 1 ID = 6A<br>TTT TTT _——-<br>0.01 COO TT 0.5 Tee<br>0<br>0 EET 2 4 6 EEE 8 10 12  EL 14 16 18 20 0 PPTL py<br>Figure 5 Typical On-Resistance vs. I D, DRAIN CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE ( C)0 25 50 75 100 °125 150<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br> ID , DRAIN CURRENT (A)D<br> I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>, DRAIN-SOURCE ON-RESISTANCE ( R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

**DMN2058U** 

**==> picture [478 x 646] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.1 1<br>0.09 Pf | | tt | fd 0.9 Pf tf ff ft tf<br>0.08 0.8<br>Pf [| | | | | ft pt Tt<br>VGS = 1.5V<br>0.07 HHH VGS  = 2.5V ID = 2A 0.7 Se ID = 1mA<br>0.06 I D  = 3.1A 0.6<br>tea _ | TYE<br>0.05 E | | deA 0.5 a I D  = 250µA<br>0.04 oe ONS Te 0.4 | Sew<br>0.03 er V GS  = 4.5V 0.3 P| | | | ft<br>a VGS = 4.5V ID = 3.6A PN<br>0.02 I D  = 3.6A 0.2<br>=e Pf tf ff ft tf<br>0.01 Pf tt | | 0.1 Pf tf ff ft tf<br>0 Ff [| | | | | fh 0 Pf | ff ft tf<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE ( C)°<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>20 1000<br>f=1MHz<br>I<br>18 fe <><br>16<br>C iss<br>ee + —_$_ <<<br>14<br>ee | ee<br>12 / \<br>10 100<br>8 T A  = 150°C TA  = 25°C<br>Coss<br>6 F | T A  = 125°C I T A  = -55°C ————<br>4 TA = 85°C C rss<br>Uy ———S<br>2 | =<br>| ff<br>0 Dy 10 || |<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20<br>V SD, SOURCE-DRAIN VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 100<br>R DS(on)<br>Limited<br>8 y, eg PW = 100µs<br>10 PW = 1ms<br>6<br>DC<br>1<br>PW = 10s<br>4 VDS = 10V PW = 1s<br>ID = 6A T  = 150°CPW = 100ms<br>2 0.1 TJC( = 25°Cm ax ) PW = 10ms<br>VGS = 4.5V<br>Single Pulse<br>DUT on 1 * MRP Board<br>0 ATI yr 0.01 SYOe<br>0 1 2 3 4 5 6 7 8 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) V DS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>)Ω<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(th)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**DMN2058U** 

**==> picture [427 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.9<br>eer D = 0.7<br>D = 0.5<br>Br<br>D = 0.3 LSeee ee<br>pS | |<br>0.1 Se D = 0.1 eea<br>fot Ty eet Oeeee<br>royeae D = 0.05 Attecert ZA 8TTT|<br>HU | ee A PP PT<br>D = 0.02<br>TG Fp I tl<br>0.01 EoeA D = 0.01 _ZttIEEtte<br>See D = 0.005  ecaa (ia ef il emi eee ee ee<br>a 0 9c a RθJA(t) = r(t)  *  Rθ JA LTT<br>te LT<br>D = Single Pulse R θJA  = 170°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN2058U** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23** 

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**----- Start of picture text -----**<br>
All 7°<br>H<br>SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20 1.40 1.30<br>C  2.30 2.50 2.40<br>a D  0.89 1.03 0.915<br>A M F  0.45  0.60  0.535<br>L L1 G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>===<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>== ===<br>L1  0.25 0.55 0.40<br>ola ———— M  0.085 0.150 0.110<br>rok D a a  0°  8°  --<br>All Dimensions in mm<br>F G<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23** 

**==> picture [136 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Y1 sna C<br>ee<br>Co X Ld X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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DMN2058U Document number: DS38468  Rev. 2 - 2 

September 2020 © Diodes Incorporated 

**DMN2058U** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

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> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.