# Power MOSFET, N Channel, 20 V, 2.9 A, 0.039 ohm, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:3943547/)

**URL**: https://novapart.co/products/DMN2053UW-7/power-mosfet-n-channel-20-v-29-a-0039-ohm-sot-323
**SKU**: DMN2053UW-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0680
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 470mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-323 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.9A |
| Drain Source On State Resistance | 0.039ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943547/)

**DMN2053UW** [ **20V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|20V|56mΩ@VGS= 4.5V|2.9A|
||65mΩ@VGS= 2.5V|2.7A|
||93mΩ@VGS= 1.8V|2.2A|
||140mΩ@VGS= 1.5V|1.8A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- General Purpose Interfacing Switch 

- Power Management Functions 

- DC-DC Converters 

   - Case: SOT323 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections Indicator: See Diagram 

   - Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

   - Weight: 0.027 grams (Approximate) 

- Analog Switch 

> SOT323 **D** D **G** G S & ~~—~~ le **S** Equivalent Circuit Top View Top View **Information** (Note 4) **Part Number Case Packaging** DMN2053UW-7 053UW-7 W-7 SOT323 3,000/Tape & Reel DMN2053UW-13 SOT323 10,000/Tape & Reel ~~ee ee~~ 

**Ordering Informationg Information Information Part Number** DMN2053UW-7 053UW-7 W-7 DMN2053UW-13 ~~ee~~ 

## **Ordering Informationg Information Information** (Note 4) 

- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

|||||||**CI5**||**YM**||||CI5 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: G = 2019)|CI5 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: G = 2019)|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||M = Month (ex: 9 = September)||||||||
|Date Code Key<br>**Year**<br>**2018**<br>**Code**<br>F<br>~~ee~~|||**2019**<br>G|||**2020**<br>H|||||**2021**<br>**2022**<br>I<br>J||**2023**<br>K||**2024**<br>L|||**2025**<br>M||
|**Month**<br>**Jan**<br>**Code**<br>1<br>~~a~~||**Feb**<br>**Mar**<br>2<br>3<br>~~ee~~||||**Apr**<br>4||**May**<br>5||||**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>6<br>7<br>8<br>9|||**Oct**<br>O|**Nov**<br>N|||**Dec**<br>D|



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DMN2053UW Document number: DS41138  Rev. 2 - 2 

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**DMN2053UW** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 6) VGS= 4.5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|2.9<br>2.3|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle=1%)|||IDM|20|A|
|Maximum BodyDiode Forward Current(Note 5)|||IS|1.0|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.47|W|
|Thermal Resistance, Junction to Ambient(Note 5)|Steady State|RJA|268|°C/W|
|Total Power Dissipation(Note 6)||PD|0.7|W|
|Thermal Resistance, Junction to Ambient(Note 6)|Steady State|RJA|178|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|20<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 1mA<br>~~ee~~|
|Zero Gate Voltage Drain Current@TC= +25°C<br>~~es~~|= +25°C<br>IDSS<br>~~es~~|—<br>~~es~~|—<br>~~es~~|1<br>~~es~~|μA<br>~~es~~|VDS= 20V,VGS= 0V<br>~~es~~|
|Gate-Source Leakage<br>~~es~~|IGSS<br>~~es~~|—<br>~~es~~|—<br>~~es~~|±1<br>~~es~~|μA<br>~~es~~|VGS= ±10V,VDS= 0V<br>~~es~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~DG~~<br>~~(O(n~~|||||||
|Gate Threshold Voltage<br>~~DG~~|VGS(TH)<br>~~G~~|0.35<br>~~G~~|—<br>~~G~~|1.0<br>~~(O(n~~|V<br>~~(O(n~~|VDS= VGS,ID= 250μA<br>~~(O(n~~|
|Static Drain-Source On-Resistance<br>~~DG~~<br>~~ee~~|RDS(ON)<br>~~G~~<br>~~ee~~|—<br>~~G~~<br>~~ee~~|39<br>~~G~~<br>~~ee~~|56<br>~~(O(n~~<br>~~ee~~|mΩ<br>~~(O(n~~<br>~~ee~~<br>~~(OQ~~|VGS= 4.5V,ID= 2A<br>~~(O(n~~<br>~~ee~~|
|||—<br>~~ee~~|45<br>~~ee~~|65<br>~~ee~~||VGS= 2.5V,ID= 2A<br>~~ee~~|
|||—<br>~~ee~~<br>~~a~~|51<br>~~ee~~<br>~~ee~~|93<br>~~ee~~||VGS= 1.8V,ID= 1A<br>~~ee~~<br>~~[sis~~|
|||—<br>~~ee~~<br>~~a~~<br>~~QOS~~|75<br>~~ee~~<br>~~ee~~<br>~~GO~~|140<br>~~ee~~<br>~~(OQ~~||VGS= 1.5V,ID= 0.5A<br>~~ee~~<br>~~[sis~~<br>~~(OQ~~|
|Diode Forward Voltage<br>~~GO~~|VSD<br>~~GO~~|—<br>~~a~~<br>~~GO~~<br>~~QOS~~|0.7<br>~~ee~~<br>~~GO~~<br>~~GO~~|1.0<br>~~GO~~<br>~~(OQ~~|V<br>~~GO~~<br>~~(OQ~~|VGS= 0V,IS= 1A<br>~~[sis~~<br>~~GO~~<br>~~(OQ~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~QOS GO~~<br>~~(OQ~~|||||||
|Input Capacitance<br>~~ne~~|Ciss<br>~~ne~~|—<br>~~ne~~|369<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~ne~~|
|Output Capacitance<br>~~ne~~|Coss<br>~~ne~~|—<br>~~ne~~|54<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|Reverse Transfer Capacitance<br>~~ne~~|Crss<br>~~ne~~|—<br>~~ne~~|32<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|Gate Resistance|Rg|—|4.1|—||VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge<br>~~i~~|Qg|—<br>~~ee~~|3.6<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~|VGS= 4.5V, VDS= 10V, ID= 6A<br>~~ee~~|
|Gate-Source Charge<br>~~i~~|Qgs|—<br>~~ee~~|0.4<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~||
|Gate-Drain Charge<br>~~i~~<br>~~—<_——~~|Qgd|—<br>~~ee~~|1.0<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~i~~<br>~~—<_——~~|tD(ON)|—<br>~~ee~~|2.6<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDD= 10V, VGS= 5V,<br>RG= 6Ω, ID= 6A<br>~~ee~~|
|Turn-On Rise Time<br>~~—<_——~~|tR|—|3.0|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off DelayTime<br>~~—<_——~~|tD(OFF)|—|12.5|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~—<_——~~|tF|—|3.6|—<br>~~ee~~|ns<br>~~ee~~||
|Reverse RecoveryTime<br>~~—<_——~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|6.0<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|IF= 1.0A,di/dt = 100A/μs<br>~~ee~~<br>~~ee~~|
|Reverse RecoveryCharge<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|0.9<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~|IF= 1.0A, di/dt= 100A/μs<br>~~ee~~|



Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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20.0   10<br> VGS = 4.5V  VDS = 5V<br> VGS = 4.0V   VGS = 2.0V<br> VGS = 3.5V  8<br>15.0<br> VGS = 3.0V   VGS = 1.8V<br>6<br> VGS = 2.5V<br>10.0   peo<br>ee 4<br> VGS = 1.5V<br>5.0   [_ |<br>2  TJ= 150 [o] C  TJ= 85 [o] C<br> VGS = 1.2V  TJ= 125 [o] C  TTJJ= -55= 25 [o][o] C C<br>0.0   A e 0  L:<br>0  0.5  1  1.5  2  2.5  3  3.5  4  4.5  5  0  0.5  1  1.5  2<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>Figure 1. Typical Output Characteristic<br>0.08  0.08<br>0.07<br>pat |tTtT<br>0.07<br>0.06  fo<br> VGS = 1.8V  0.05<br>0.06  eoeeeeeeee ID = 1.0A D = 1.0A = 1.0A  ID = 2.0A D = 2.0A = 2.0A<br>0.04  Neen<br>0.05   VGS = 2.5V  0.03  | ID = 0.5A D = 0.5A = 0.5A<br>0.02<br>0.04<br> VGS = 4.5V  0.01<br>pf ft ft<br>0.03  0<br>0  2  4  6  8  0  pt 2  ft 4  | 6  tT|| 8  yl 10<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)  GS, GATE-SOURCE VOLTAGE (V)  , GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>2.2<br>0.08<br>0.07  VGS = 10V  TJ= 150 [o] C  2<br>pp pt tT tT<br>TJ= 125 [o] C<br>0.06  1.8   VGS = 4.5V, ID = 2A GS = 4.5V, ID = 2A = 4.5V, ID = 2A D = 2A = 2A<br>0.05  TJ= 85 [o] C  1.6   VGS = 2.5V, ID = 2A GS = 2.5V, ID = 2A = 2.5V, ID = 2A D = 2A = 2A<br>0.04  TJ= 25 [o] C  1.4  oyaeae<br>0.03  TJ= -55 [o] C  1.2  fee<br>0.02  1   VGS = 1.8V, ID = 1A GS = 1.8V, ID = 1A = 1.8V, ID = 1A D = 1A = 1A<br>0.01  0.8  aAanan  VGS = 1.5V, ID = 0.5A GS = 1.5V, ID = 0.5A = 1.5V, ID = 0.5A D = 0.5A = 0.5A  Lo<br>0  0.6<br>0  5  10  15  -50  -25  0  25  50  75  100 125 150 175<br>== ID, DRAIN CURRENT (A)  ptt TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( \ ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)<br>ID , DRAIN CURRENT (A) ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.08<br>0.07<br>pat |tTtT<br>0.06  fo<br>0.05<br>eoeeeeeeee<br>ID = 1.0A D = 1.0A = 1.0A  ID = 2.0A D = 2.0A = 2.0A<br>0.04  Neen<br>0.03  |<br>ID = 0.5A D = 0.5A = 0.5A<br>0.02<br>0.01<br>pf ft ft<br>0<br>0  pt 2  ft 4  | 6  tT|| 8  yl 10  12<br>VGS, GATE-SOURCE VOLTAGE (V)  GS, GATE-SOURCE VOLTAGE (V)  , GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.2<br>2<br>pp pt tT tT<br>1.8   VGS = 4.5V, ID = 2A GS = 4.5V, ID = 2A = 4.5V, ID = 2A D = 2A = 2A<br>1.6<br> VGS = 2.5V, ID = 2A GS = 2.5V, ID = 2A = 2.5V, ID = 2A D = 2A = 2A<br>1.4  oyaeae<br>1.2  fee<br>1   VGS = 1.8V, ID = 1A GS = 1.8V, ID = 1A = 1.8V, ID = 1A D = 1A = 1A<br>0.8   VGS = 1.5V, ID = 0.5A GS = 1.5V, ID = 0.5A = 1.5V, ID = 0.5A D = 0.5A = 0.5A<br>aAanan Lo<br>0.6<br>-50  -25  0  25  50  75  100 125 150 175<br>ptt TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( \ ℃ )<br>Figure 6. On-Resistance Variation with Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.09  3<br>0.08<br> VGS = 1.5V, ID = 0.5A  2.5<br>0.07  on e? ee e e<br>Speers<br>0.06   VGS = 1.8V, ID = 1A  |) 2  ELLE<br>0.05  e e<br>se as 1.5  PPE EEE<br>0.04<br> VGS = 2.5V, ID = 2A<br>0.03  mC eeer 1  L| EE<br>ID = 1mA<br> VGS = 4.5V, ID = 2A<br>0.02<br>re 0.5  mee | |<br>0.01  ID = 250μA<br>0  PTPT EEEFE 0  a PP<br>-50  -25  0  25  50  75  100 125 150 175  -50  -25  0  25  50  75  100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 8. Gate Threshold Variation vs. Junction<br>Figure 7. On-Resistance Variation with Temperature<br>Temperature<br>10  1000<br>f=1MHz<br>8  VGS = 0V  Ciss<br>| ==<br>6  |<br>ee || 100   We<br>4  Coss<br>TJ= 85 [o] C  a<br>TJ= 150 [o] C<br>| a a ee ee<br>2  TJ= 25 [o] C<br>TJ= 125 [o] C  Crss<br>}] 7<br>TJ= -55 [o] C<br>0  Dp 10   Tt<br>0  0.3  0.6  0.9  1.2  1.5  0  4  8  12  16  20<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>Figure 9. Diode Forward Voltage vs. Current<br>100<br>10<br>RDS(ON) Limited  PW =100µs<br>8  10<br>6  1<br>PW =1ms<br>7 PW =10ms  Si TAN SSEl<br>4  0.1  PW =100ms<br>PW =1s<br>2  VDS = 10V, ID = 6A  0.01  TTJ(Max) C = 25= 150 ℃ ℃   PW =10s DC<br>Single Pulse<br>DUT on 1*MRP board<br>VGS =4.5V ee<br>0  0.001<br>0  2  4  6  8  0.1  1  10  100<br>Qg (nC) Figure 12. SOA, Safe Operation AreaVDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>RDS(ON) VGS(TH)<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1  ee a<br>Se ae<br>SeSooo CoCee<br>D=0.9<br>D=0.5  aa 0<br>a a ee  o D=0.7  O<br>D=0.3  SNAeeATUTVIMANI edi WEI TIT TIT TT ETT<br>com ee aa<br>fo<br>0.1  e ST MT CM e TMM AAU A<br>Ee D=0.1  HHeoteeey | i i eT<br>Pt TTerry [ gi] TT TTT [ETT] TTPTPP|<br>a AAee<br>D=0.05<br>Cn aA<br>terri epe e e D=0.02  A TTI LUTLETITIA<br>TR ETT TEE ET<br>0.01  TAa w D=0.01  A a<br>PRY oc SEE Sse eos sie<br>LAZISATT TT<br>APall D=0.005  ETOPHTTI TTT<br>PANT D=Single Pulse  TTT CEREP RθJA(t) = r(t) * RθJA<br>RθJA = 257.8 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001<br>1E-05  0.0001  0.001  0.01  0.1  1  10  100  1000  10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT323** 

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D<br>A2<br>SOT323<br>Dim  Min  Max  Typ<br>c a A1  0.00 0.10 0.05<br>A1 e L A2  0.90 1.00 0.95<br>b  0.25 0.40 0.30<br>JO = c  0.10 0.18 0.11<br>b D  1.80 2.20 2.15<br>E  2.00 2.20 2.10<br>E1  1.15 1.35 1.30<br>e  0.650 BSC<br>e1  1.20 1.40 1.30<br>F  0.375 0.475 0.425<br>L  0.25 0.40 0.30<br>E E1 a 0° 8° --<br>All Dimensions in mm<br>| el —<br>F e1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT323** 

**==> picture [6 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
X<br>**----- End of picture text -----**<br>


**==> picture [360 x 116] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>G  1.300<br>Y1 G<br>X  0.470<br>Y  0.600<br>== Y1  2.500<br>C<br>“ola<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMN2053UW Document number: DS41138  Rev. 2 - 2 

July 2019 © Diodes Incorporated 

**DMN2053UW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMN2053UW Document number: DS41138  Rev. 2 - 2 

July 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMN2053UW-7/power-mosfet-n-channel-20-v-29-a-0039-ohm-sot-323)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmn2053uw-7/mosfet-n-ch-20v-2-9a-sot-323/dp/3943547)
---

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