# Power MOSFET, N Channel, 20 V, 6.4 A, 0.028 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3127328RL/)

**URL**: https://novapart.co/products/DMN2041L-7/power-mosfet-n-channel-20-v-64-a-0028-ohm-sot-23
**SKU**: DMN2041L-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0890
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 780mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 780mW |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.02ohm |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.4A |
| Drain Source On State Resistance | 0.028ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 1.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127328RL/)

- **NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U DMN2041L N-CHANNEL ENHANCEMENT MODE MOSFET** 

- **Features Mechanical Data** 

- ~~So Po,~~  Low On-Resistance  Case: SOT23  Low Gate Threshold Voltage  Case Material: Molded Plastic, “Green” Molding Compound. 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Low Input Capacitance 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Fast Switching Speed 

   - Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - Terminals Connections: See Diagram Below 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

 Weight: 0.008 grams (Approximate) 

- **Qualified to AEC-Q101 Standards for High Reliability** 

**==> picture [517 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
Drain<br>D<br>Gate<br>G S<br>~ rt Source SNA<br>Top View  Internal Schematic  Top View<br>Ordering Informationg Information Information (Note 4)<br>Part Number Case Packaging<br>DMN2041L-7  SOT23 3000/Tape & Reel<br>Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.<br>                   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and<br>Lead-free.<br>**----- End of picture text -----**<br>


## **Ordering Informationg Information Information** (Note 4) 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
MN9 = Product Type Marking Code<br>MN9 YM or YM    = Date Code Marking for SAT<br>Y or    = Year (ex: A = 2013) Y<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2009 2010 2011 2012 2013 2014 2015<br>ee Code W  X  Y  Z  A  B  C<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3 4  5 6 7  8 9 O N  D<br>eS<br>YM<br>**----- End of picture text -----**<br>


1 of 6 **www.diodes.com** 

DMN2041L Document number: DS31962 Rev. 4 - 3 

January 2019 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U** 

**DMN2041L** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|20|V|
|Gate-Source Voltage|||VGSS|±12|V|
|Continuous Drain Current (Note 5)|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|6.4<br>4.5|A|
|Pulsed Drain Current (Note 6)|||IDM|30|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)|PD|0.78|W|
|Thermal Resistance, Junction to Ambient @ TA= +25°C|RθJA|161|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~oS~~|**Symbol**<br>~~oS~~|**Min**<br>~~oS~~|**Typ **<br>~~OS~~|**Max**<br>~~OS~~|**Unit**<br>~~OS~~|**Test Condition**<br>~~OS~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~oSOS~~|||||||
|Drain-Source Breakdown Voltage<br>~~oS~~|BVDSS<br>~~oS~~|20<br>~~oS~~<br>~~ee~~|—<br>~~OS~~<br>~~eea~~|—<br>~~OS~~<br>~~a~~|V<br>~~OS~~<br>~~a~~|VGS= 0V, ID= 250μA<br>~~OS~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~oS~~<br>~~eS~~|IDSS<br>~~oS~~<br>~~eS~~|—<br>~~oS ~~<br>~~eS~~<br>~~ee~~|—<br> ~~OS~~<br>~~eS~~<br>~~eea~~|1.0<br>~~OS~~<br>~~eS~~<br>~~a~~|µA<br>~~OS~~<br>~~eS~~<br>~~a~~|VDS= 20V, VGS= 0V<br>~~OS~~<br>~~eS~~|
|Gate-Source Leakage<br>~~eS~~<br>~~OO~~|IGSS<br>~~eS~~<br>~~Eo SEE~~<br>|—<br>~~eS~~<br>~~ee~~<br>~~SEE~~<br>|—<br>~~eS~~<br>~~eea~~<br>~~SEE~~<br>|±100<br>~~eS~~<br>~~a~~<br>~~SEE~~<br>|nA<br>~~eS~~<br>~~a~~<br>~~SEE~~|VGS= ±12V, VDS= 0V<br>~~eS~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~ee a~~<br>~~ET~~<br>~~Eo SEE~~<br>~~OO~~|||||||
|Gate Threshold Voltage<br>~~ET~~<br>~~OOLSS~~<br>~~OE~~|VGS(TH)<br>~~ET~~<br>~~Eo SEE~~<br>~~LSS~~|0.5<br>~~ET~~<br>~~SEE~~<br>~~LSS~~|—<br>~~ET~~<br>~~SEE~~<br>~~LSS~~|1.2<br>~~ET~~<br>~~SEE~~<br>~~LSS~~|V<br>~~ET~~<br>~~SEE~~|VDS= VGS, ID= 250μA<br>~~ET~~|
|Static Drain-Source On-Resistance<br>~~OOLSS~~<br>~~OE~~|RDS(ON)<br>~~Eo SEE~~<br>~~LSS~~|—<br>—<br>~~SEE~~<br>~~LSS~~|20<br>26<br>~~SEE~~<br>~~LSS~~|28<br>41<br>~~SEE~~<br>~~LSS~~|mΩ<br>~~SEE~~|VGS= 4.5V, ID= 6.0A|
|||||||VGS= 2.5V, ID= 5.2A|
|Forward Transfer Admittance<br>~~OO LSS~~<br>~~OE~~||Yfs|<br>~~Eo SEE~~<br>~~LSS~~|—<br>~~SEE~~<br>~~LSS~~|6<br>~~SEE~~<br>~~LSS~~|—<br>~~SEE~~<br>~~LSS~~|S<br>~~SEE~~|VDS= 10V, ID= 6A|
|Diode Forward Voltage<br> ~~LSS~~<br>~~OE~~|VSD<br>~~LSS~~|—<br>~~LSS~~|0.7<br>~~LSS~~|1.2<br>~~LSS~~|V|VGS= 0V, IS= 1.7A|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br> ~~LSS~~<br>~~OE~~<br>~~ey—~~<br>~~aoeeeeelne~~|||||||
|Input Capacitance<br>~~CIF~~<br>~~ey—~~<br>~~aoe~~|Ciss<br>~~oe~~|—<br>~~eee~~|550<br>~~eee~~|—<br>~~eee~~|pF<br>~~el~~|VDS= 10V, VGS= 0V,<br>f = 1.0MHz<br>~~elne~~|
|Output Capacitance<br>~~ey—~~<br>~~aoe~~|Coss<br>~~oe~~|—<br>~~eee~~|88<br>~~eee~~|—<br>~~eee~~|||
|Reverse Transfer Capacitance<br>~~ey—~~<br>~~a oe~~|Crss<br>~~oe~~<br>~~ns~~|—<br>~~eee~~<br>~~ns~~|81<br>~~eee~~|—<br>~~eee~~|||
|Gate Resistance<br> ~~oe~~<br>~~ys~~|Rg<br>~~oe ~~<br>~~ys~~<br>~~ns~~|—<br> ~~eee~~<br>~~ys~~<br>~~ns~~|1.34<br>~~eee~~<br>~~ys~~|—<br>~~eee ~~<br>~~ys~~|Ω<br> ~~el~~<br>~~ys~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~el ne~~<br>~~ys~~|
|Total Gate Charge (10V)<br>~~SS~~|Qg<br>~~ns~~<br>~~SS~~|—<br>~~ns~~<br>~~SS~~|15.6<br>~~SS~~|—<br>~~SS~~|nC<br>~~SS~~|VGS= 10V, VDS= 10V, ID= 6A<br>~~SS~~|
|Total Gate Charge (4.5V)<br>~~SS~~|Qg<br>~~SS~~|—<br>~~SS~~|7.2<br>~~SS~~|—<br>~~SS~~|nC<br>~~SS~~<br>~~ee~~|VGS= 4.5V, VDS= 10V, ID= 6A<br>~~SS~~<br>~~ee~~|
|Gate-Source Charge<br>~~SS~~|Qgs<br>~~SS~~|—<br>~~SS~~|1.0<br>~~SS~~|—<br>~~SS~~|||
|Gate-Drain Charge<br>~~SS~~<br>~~—<——~~|Qgd<br>~~SS~~|—<br>~~SS~~|1.9<br>~~SS~~|—<br>~~SS~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~—<——~~|tD(ON)|—|4.69|—<br>~~ee~~|ns<br>~~ee~~|VDD= 10V, VGEN= 4.5V,<br>RGEN= 1Ω, ID= 6.7A<br>~~ee~~|
|Turn-On Rise Time<br>~~PO~~<br>~~—<——~~|tR|—|13.19|—<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—<——~~|tD(OFF)|—|22.10|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—<——~~|tF|—|6.43|—<br>~~ee~~|||



2 of 6 **www.diodes.com** 

DMN2041L Document number: DS31962 Rev. 4 - 3 

January 2019 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U** 

**DMN2041L** 

**==> picture [478 x 662] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 VGS = 10V 20<br>16 DNZe V GS  = 4.5V ee V GS  = 2.0V 16 S V     = 5VDS a / aan<br>VGS = 3.0V [A)]<br>VGS = 2.5V<br>12 ee 12 E e<br>| fe<br>C [URRENT(]<br>8 8<br>ny D [RAIN] <n<br>, D T   = 150°CA<br>4 SCE V GS  = 1.5V I 4 T   = 125°CA I, T   = 85°CA<br>T   = 25°CA<br>T   = -55°CA<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3<br>AEE VDS, DRAIN-SOURCE VOLTAGE (V) S V    , GATE-SOURCE VOLTAGE (V)GS S ||<br>Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic<br>0.06 ) 0.06<br>(<br>0.05 THE N [CE] € e V     = 4.5VGS y7<br>T [A]<br>I [S] S<br>0.04 0.04<br>Po W O<br>| VGS = 1.8V | | | | le O [N-RE] Vp T   = 150°CA<br>0.03<br>CY a e T   = 125°CA<br>VGS = 2.5V O [URCE] T   = 85°CA<br>0.02 0.02<br>I [N-S] T   = 25°CA<br>ee GE S<br>0.01 V GS  = 10V V GS  = 4.5V D [RA] , T   = -55°CA<br>65 N\ [S(ON)] D  Ve en<br>0 BeuEe R 0 =<br>0 4 8 12 16 20 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A) I  , DRAIN CURRENT (A)D<br>Fig. 3  Typical On-Resistance  Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.6 0.08<br>1.4 V GS = 4.5V<br>ID = 10A 0.06<br>1.2 M4 VIGSD = 5.0A = 2.5V ALLELE<br>0.04<br>1.0 OO VGS = 2.5V<br>7 ID = 5.0A<br>0.02<br>0.8 VGS = 4.5V<br>ID = 10A<br>0.6 HE 0 eee<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE  ( °C 癈 ) TA, AMBIENT TEMPERATURE  ( 癈 °C )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


3 of 6 **www.diodes.com** 

DMN2041L Document number: DS31962 Rev. 4 - 3 

January 2019 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U** 

**DMN2041L** 

**==> picture [486 x 680] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6 20<br>)<br>( [V] 1.4 Pt f f | | fd. sf | | |<br>G [E]<br>16<br>T [A] 1.2<br>O [L] |e eet yy EE<br>V<br>DO [L] 1.0 |}—_| }ttt 12 SEE T A  =  25 = 癈 °C<br>H<br>SE 0.8 I   = 1mAD<br>R<br>S se ES<br>T [H] 0.6 s on I   = 250µAD 8 Tae<br>T [E]<br>A<br>G Ts = xX<br>0.4<br>, 4<br>ULES<br>G [S(TH)] 0.2 SS @ Gee<br>V<br>0 0<br>-50 Ett -25T  , AMBIENT TEMPERATURE (°C)A 0 25 50 TT 75 100 ty 125 150 0 aKAY V0.2SD, SOURCE-DRAIN VOLTAGE (V) \/ 0.4 0.6 we 0.8 LT 1.0 1.2<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>1,000 ee f = 1MHz 10,000 fp»{ [#”]<br>T   = 150°CA<br>Se C iss ee eee Yi<br>ee otfF [Lee]<br>a [nA)] (T 1,000 n A .2Mane T   = 125°CA =<br>[N] E<br>R<br>R<br>U<br>100 aN C oss vv C 100 ~~f o<br>SeSSS C rss _£ Oa= SSSS oo T   = 85°CA<br>ey a oo<br>L [EAKAGE]<br>se ek We a<br>, S 10<br>2. Ce I D [S] P| | | | T   = -55°CA | | T   = 25°CA<br>10 1 S EA<br>0 [gm 5 10 15 20 i 2  | 4 6 8 po 10 12 14 16 18 20<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , DRAIN-SOURCE VOLTAGE (V) DS<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage<br>1<br>D = 0.7<br>D = 0.5<br>Ssea<br>Eo TE RETren<br>D = 0.3<br>72 A<br>0.1<br>D = 0.1<br>D = 0.9<br>D = 0.05<br>Po eat At R R JA JA (t) = r(t)   = 160160 癈 *°C/W R /W JA Fit<br>D = 0.02<br>aan oe AA mail<br>0.01 7, D = 0.01 P(pk) t1<br>t2<br>D = 0.005 TJ - TA = P * RJA(t)<br>PoPreteTn I etnC Duty Cycle, D = t 1 /t 2 manmail<br>D = Single Pulse<br>0.001<br>0.00001 cc 0.0001 LEE 0.001 CUTIE 0.01 CUI 0.1 EET 1 ETI 10 ETI 100 EET 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)  IS<br>GS(TH)<br>V<br>, LEAKAGE CURRENT (nA)<br>IDSS<br>C, CAPACITANCE (pF)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


4 of 6 **www.diodes.com** 

DMN2041L Document number: DS31962 Rev. 4 - 3 

January 2019 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U** 

**DMN2041L** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [28 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23<br>**----- End of picture text -----**<br>


**==> picture [481 x 424] intentionally omitted <==**

**----- Start of picture text -----**<br>
All 7°<br>H<br>SOT23<br>GAUGE PLANE<br>0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K<br>B  1.20  1.40  1.30<br>‘ea C  2.30  2.50  2.40<br>a D  0.89 1.03 0.915<br>A M F  0.45 0.60 0.535<br>—- ‘ | L J) L1 ;Ges4te G  1.78 2.05 1.83<br>H  2.80 3.00 2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>oS aan<br>L1  0.25  0.55  0.40<br>M  0.085 0.150 0.110<br>| } ===<br>tt D a a  0°  8°  --<br>All Dimensions in mm<br>F G<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>Y<br>Dimensions  Value (in mm)<br>C  2.0<br>Y1 lov C<br>S X  0.8<br>X1  1.35<br>Y  0.9<br>Y1  2.9<br>Pere<br>_\ X ean X1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ested Pad Layout yout out** 

5 of 6 **www.diodes.com** 

DMN2041L Document number: DS31962 Rev. 4 - 3 

January 2019 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U** 

**DMN2041L** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings & noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: we A.   Life support devices or systems are devices or systems which: WS 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. rou Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its OTS representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated **www.diodes.com** cz 

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